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    Samsung Semiconductor KM6161002AJ-20

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    Samsung Electro-Mechanics KM6161000BLT-7L

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    Samsung Semiconductor KM6161002AJ-15

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    KM6161 Datasheets (99)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    KM6161000BLR-5L Samsung Electronics 64K x16 bit Low Power CMOS Static RAM Original PDF
    KM6161000BLR-7L Samsung Electronics 64K x16 bit Low Power CMOS Static RAM Original PDF
    KM6161000BLRI-10L Samsung Electronics 64K x16 bit Low Power CMOS Static RAM Original PDF
    KM6161000BLRI-7L Samsung Electronics 64K x16 bit Low Power CMOS Static RAM Original PDF
    KM6161000BLT-5L Samsung Electronics 64K x16 bit Low Power CMOS Static RAM Original PDF
    KM6161000BLT-7L Samsung Electronics 64K x16 bit Low Power CMOS Static RAM Original PDF
    KM6161000BLTI-10L Samsung Electronics 64K x16 bit Low Power CMOS Static RAM Original PDF
    KM6161000BLTI-7L Samsung Electronics 64K x16 bit Low Power CMOS Static RAM Original PDF
    KM6161000BLTI-7LT Samsung Electronics IC SRAM CHIP ASYNC SINGLE 5V 1MBIT 64KX16 70NS 44TSOP-II Original PDF
    KM6161002A Samsung Electronics CMOS SRAM Scan PDF
    KM6161002A-12 Samsung Electronics 64K x 16-Bit Speed Static RAM (5V Operating) Revolutionary Pin Out Scan PDF
    KM6161002A-15 Samsung Electronics 64K x 16-Bit Speed Static RAM (5V Operating) Revolutionary Pin Out Scan PDF
    KM6161002A-20 Samsung Electronics 64K x 16-Bit Speed Static RAM (5V Operating) Revolutionary Pin Out Scan PDF
    KM6161002AI Samsung Electronics 64K x 16 Bit High-Speed CMOS Static RAM Original PDF
    KM6161002AI Samsung Electronics 64K x 16 Bit Speed Static RAM (5V Operating) Revolutionary Pin Out Scan PDF
    KM6161002AI-12 Samsung Electronics 64K x 16-Bit Speed Static RAM (5V Operating) Revolutionary Pin Out Scan PDF
    KM6161002AI-15 Samsung Electronics 64K x 16-Bit Speed Static RAM (5V Operating) Revolutionary Pin Out Scan PDF
    KM6161002AI-20 Samsung Electronics 64K x 16-Bit Speed Static RAM (5V Operating) Revolutionary Pin Out Scan PDF
    KM6161002AIJ-12 Samsung Electronics 64K x 16 Bit High-Speed CMOS Static RAM Original PDF
    KM6161002AIJ-15 Samsung Electronics 64K x 16 Bit High-Speed CMOS Static RAM Original PDF

    KM6161 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    KM6161000BLT7L

    Abstract: KM6161000BLTI-7L
    Text: KM6161000B Family CMOS SRAM Document Title 64K x16 bit Low Power CMOS Static RAM Revision History Revision No. History Draft Data Remark 0.0 Initial draft August 12, 1995 Preliminary 1.0 Finalize - One datasheet for commercial and industrial part. April 15, 1996


    Original     		KM6161000B KM6161000BLT7L KM6161000BLTI-7L PDF

    KM6161002C

    Abstract: KM6161002CJ KM6161002CT
    Text: CMOS SRAM KM6161002C/CL, KM6161002CI/CLI Document Title 64Kx16 Bit High-Speed CMOS Static RAM 5.0V Operating . Operated at Commercial and Industrial Temperature Ranges. Revision History Rev. No. History Draft Data Remark Rev. 0.0 Initial release with preliminary.


    Original     		KM6161002C/CL, KM6161002CI/CLI 64Kx16 48-fine KM6161002CZ KM6161002CF 80/Typ. 25/Typ. KM6161002C KM6161002CJ KM6161002CT PDF

    KM6161002B

    Abstract: No abstract text available
    Text: CMOS SRAM KM6161002B, KM6161002BI Document Title 64Kx16 Bit High Speed Static RAM 5.0V Operating , Revolutionary Pin out. Operated at Commercial and Industrial Temperature Range. Revision History Rev No. History Draft Data Remark Rev. 0.0 Initial release with Design Target.


    Original     		KM6161002B, KM6161002BI 64Kx16 44-TSOP2-400F KM6161002B PDF

    km6161000bl7

    Abstract: No abstract text available
    Text: Preliminary KM6161OOOBL / L-L CMOS SRAM 64Kx16 Bit CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time : 55,70 ns max. • Low Power Dissipation Standby(CMOS) :550^W (max.)L-Version : 110|iW (max.)LL-Version Operating : 660mW (max.) • Single 5V±10% Power Supply


    OCR Scan     		KM6161OOOBL 64Kx16 550MW 660mW I/01-I/08 KM6161000BLT/LT-L: 400mil KM6161000BLR/LR-L: KM6161000BL/L-L km6161000bl7 PDF

    TT1102

    Abstract: 100PF
    Text: Preliminary CMOS SRAM KM6161000BLI / Ll-L 64Kx16 Bit Industrial Temperature Range Operating Static RAM FEATURES GENERAL DESCRIPTION The KM6161000BLI/L1-L is a 1,048,576-bit high speed • Industrial Temperature Range : -40 to 85°C Static Random Access Memory organized as 65,536


    OCR Scan     		KM6161000BLI 64Kx16 550pW 275nW 660mW I/01-I/08 KM6161000BLTI/LTI-L: 400mil KM6161000BLRI/LR1-L: TT1102 100PF PDF

    ic tba 220

    Abstract: km6161002j KM6161002-17
    Text: SAMSUNG ELEC T R O N I C S INC b7E D • □ □ 1 7 b clö SID SriGK PRELIMINARY KM6161002 CMOS SRAM 65,536 WORD x 16 Bit High-Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time: 15, 17, 20ns Max. • Low Power Dissipation Standby (TTL)


    OCR Scan     		KM6161002 KM6161002J-15: 230mA KM6161002J-17: 220mA KM6161002J-20: 210mA KM6161002J: 44-Pin Q0177DS ic tba 220 km6161002j KM6161002-17 PDF

    Untitled

    Abstract: No abstract text available
    Text: CMOS SRAM KM6161002B, KM6161002BI 6 4 K x 16 Bit High-Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time 8,10,12ns Max. • Low Power Dissipation Standby (TTL) : 50 mA(Max.) (CMOS) : 10mA(Max.) Operating KM6161002B - 8 : 200 mA(Max.)


    OCR Scan     		KM6161002B, KM6161002BI KM6161002B KM6161002BJ 44-SOJ-400 KM6161002BT 44-TSOP2-4QOF PDF

    Untitled

    Abstract: No abstract text available
    Text: Preliminary CMOS SRAM KM6161OOOBL / L-L 64Kx16 Bit CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time : 55,70 ns max. • Low Power Dissipation Standby(CMOS) :550nW(max.)L-Version :110|iW(max.)LL-Version Operating : 660mW (max.) • Single 5V±10% Power Supply


    OCR Scan     		KM6161OOOBL 64Kx16 550nW 660mW KM6161OOOBLT/LT-L: 400mil KM6161OOOBLR/LR-L: KM6161000BL/L-L 576-bit PDF

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY KM6161002A CMOS SRAM 64 K x 16 Bit High-Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time 12,15,17,20 ns Max. • Low Power Dissipation Standby (TTL) : 30 mA(Max.) (CMOS): 10 mA(Max.) Operating KM6161002A-12 : 220 mA(Max.)


    OCR Scan     		KM6161002A KM6161002A-12 KM6161002A-15 KM6161002A-17 161002A KM6161002AJ 44-SOJ-400 KM6161002AT 44-TSOP2-400F KM6161002A PDF

    Untitled

    Abstract: No abstract text available
    Text: KM6161002 CMOS SRAM 65,536 WORDx 16 Bit High-Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time: 15, 17, 20ns Max. • Low Power Dissipation Standby (TTL) : 40mA (Max.) (CMOS) : 10mA (Max.) Operating: KM6161002-15: 230mA (Max.) KM6161002-17 : 220mA (Max.)


    OCR Scan     		KM6161002 KM6161002-15: 230mA KM6161002-17 220mA KM6161002-20 210mA KM6161002J: 44-SOJ-400 KM6161002 PDF

    Untitled

    Abstract: No abstract text available
    Text: CMOS SRAM KM6161002C/CL, KM6161002CI/CLI lin û iû t TB’f I o 64Kx16 Bit High-Speed CMOS Static RAM 5.0V Operating Operated at Commercial and Industrial Temperature Range. Revision History Rev. No. History Rev. 0.0 Initial Draft Rev. 1.0 Relex DC characteristics


    OCR Scan     		KM6161002C/CL, KM6161002CI/CLI 64Kx16 48-fine 6161002CZ 6161002CF rese02CI/CLI PDF

    km6161000blti

    Abstract: FTC 960 6161000BL
    Text: KM6161000B Family CMOS SRAM 64Kx16 bit Low Power CMOS Static RAM FEATURE SUMMARY GENERAL DESCRIPTION • • • • • • • The KM6161000B family is fabricated by SAMSUNG'S advanced CMOS process technology. The family can support various operating temperature


    OCR Scan     		KM6161000B 64Kx16 64Kx16 44-TSOP I/01-7 7CJb4142 023bMcl km6161000blti FTC 960 6161000BL PDF

    Untitled

    Abstract: No abstract text available
    Text: KM6161002 CMOS SRAM ELECTR O NICS 6 4 K x 1 6 B H High-Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time 15,17,20 ns Max • Low Power Dissipation Standby (TTL) : 40 mA(Max.) (CMOS): 10 mA(Max.) Operating KM6161002-15 : 230 mA(Max.)


    OCR Scan     		KM6161002 KM6161002-15 KM6161002-17 KM6161002-20 KM6161002 576-bit PDF

    Untitled

    Abstract: No abstract text available
    Text: KM6161000B Family CMOS SRAM 64K x16 bit Low Power CMOS Static RAM FEATURES SUMMARY GENERAL DESCRIPTION • Process Technology : Poly Load • Organization : 64K x16 _ • Data Byte Control : LB=I/O i ~8, UB=I/09~16 • Power Supply Voltage : 4.5~5.5V • Low Data Retention Voltage : 2V Min


    OCR Scan     		KM6161000B 44-TSOP2-4QOF/R 6161000B PDF

    KM6161002J-15

    Abstract: No abstract text available
    Text: SAM S UN G E L E C T R O N I C S INC b7E D • 7^4142 DDlTb^fi 21G PRELIMINARY KM6161002 SMGK CMOS SRAM 65,536 WORD x 16 Bit High-Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time: 15, 17, 20ns Max. • Low Power Dissipation Standby


    OCR Scan     		KM6161002 KM6161002J-15: 230mA KM6161002J-17: 220mA KM6161002J-20: 210mA KM6161002J: 44-Pin KM6161002 KM6161002J-15 PDF

    Untitled

    Abstract: No abstract text available
    Text: KM6161002B, KM6161002BI CMOS SRAM Document Title 64Kx16 Bit High Speed Static RAM 5.0V Operating , Revolutionary Pin out. Operated at Commercial and Industrial Temperature Range. Revision History Rev No. History Rev. 0.0 Initial release with Design Target.


    OCR Scan     		KM6161002B, KM6161002BI 64Kx16 8/10/12ns 200/190/180mA 200/195/190mA 44-SOJ-400 PDF

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY CMOS SRAM KM6161002C/CL, KM6161002CI/CLI iin c k n t T b’f I o 64Kx16 Bit High-Speed CMOS Static RAM 5.0V Operating Operated at Commercial and Industrial Temperature Range. Revision History Rev. No. History Rev. 0.0 Initial Draft Rev. 1.0 Relex DC characteristics


    OCR Scan     		KM6161002C/CL, KM6161002CI/CLI 64Kx16 48-fine PDF

    Untitled

    Abstract: No abstract text available
    Text: KM6161002 CMOS SRAM 6 4 K x 16 Bit High-Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fa st A cce ss T im e 1 5 .1 7 ,2 0 n s M ax. • L ow P o w e r D issip a tio n S ta n d b y (T T L) : 4 0 m A (M a x.) (C M O S ): 10 m A (M a x.) O p e ra tin g K M 6 1 6 1 0 0 2 -1 5 : 2 3 0 m A (M a x.)


    OCR Scan     		KM6161002 PDF

    KM6161002A-12

    Abstract: KM6161002A KM6161002AI KM6161002AJ
    Text: KM6161002A, KM6161002Al CMOS SRAM Document Title 64Kx16 Bit High Speed Static RAM 5V Operating , Revolutionary Pin out. Operated at Commercial and Industrial Temperature Range. Revision History Rev. No. History Draft Data Rev. 0.0 Initial release with Preliminary.


    OCR Scan     		KM6161002A, KM6161002Al 64Kx16 12/15/17/20ns 220/210/200/190mA 190/185/185/180mA 44-TSOP2-400F KM6161002A-12 KM6161002A KM6161002AI KM6161002AJ PDF

    KXJ b1

    Abstract: KM6161002C KM6161002CJ KM6161002CT 44so
    Text: CMOS SRAM KM6161002C/CL, KM6161002CI/CLI Document Title 64Kx16 Bit High-Speed CMOS Static RAM 5.0V Operating Operated at Commercial and Industrial Temperature Range. Revision History Rev. No. History Rev. 0.0 Initial Draft Rev. 1.0 Relex DC characteristics


    OCR Scan     		KM6161002C/CL, KM6161002CI/CLI 64Kx16 48-fine KM6161002CZ KM6161002CF spe1002CI/CLI KXJ b1 KM6161002C KM6161002CJ KM6161002CT 44so PDF

    Untitled

    Abstract: No abstract text available
    Text: KM6161002 CMOS SRAM 65,536 WORDx 16 Bit High-Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time: 15, 17, 20ns Max. • Low Power Dissipation Standby (TTL) : 40mA (Max.) (CMOS) : 10mA (Max.) Operating : KM6161002-15 : 230mA (Max.) KM6161002-17 : 220mA (Max.)


    OCR Scan     		KM6161002 KM6161002-15 230mA KM6161002-17 220mA KM6161002-20 210mA KM6161002J 44-SOJ-400 KM6161002 PDF

    Untitled

    Abstract: No abstract text available
    Text: KM6161002A CMOS SRAM 64 K x 16 Bit High-Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time 12,15,17,20 ns Max. • Low Power Dissipation Standby (TTL) : 30 mA(Max.) (CMOS): 10 mA(Max.) Operating KM6161002A-12 : 220 mA(Max.) KM6161002A-15:210 mA(Max.)


    OCR Scan     		KM6161002A KM6161002A-12 KM6161002A-15 KM6161002A-17: KM6161002A-20 KM6161002AJ 44-SOJ-400 KM6161002AT 44-TSOP2-4Ã KM6161002A PDF

    Untitled

    Abstract: No abstract text available
    Text: CMOS SRAM KM6161002 64K x 16 Bit High-Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time 15,17,20 ns Max. • Low Power Dissipation S tandby (TTL) : 40 mA(Max.) (CMOS): 10 mA(Max.) Operating KM6161002J-15 : 230 K M 61 6100 2J-1 7: 220


    OCR Scan     		KM6161002 KM6161002J-15 6161002J-20 KM6161002 576-bit PDF

    Untitled

    Abstract: No abstract text available
    Text: KM6161002A, KM6161002AI CMOS SRAM Document Title 64Kx16 Bit High Speed Static RAM 5V Operating , Revolutionary Pin out. Operated at Commercial and Industrial Temperature Range. Revision History Draft Data Remark Rev. No. History Rev. 0.0 Initial release with Preliminary.


    OCR Scan     		KM6161002A, KM6161002AI 64Kx16 12/15/17/20ns 220/210/200/190mA 190/185/185/180mA 44-SO PDF