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    KSD362 Price and Stock

    onsemi KSD362N

    TRANS NPN 70V 5A TO220-3
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    onsemi KSD362R

    TRANS NPN 70V 5A TO220-3
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    onsemi KSD362RTU

    TRANS NPN 70V 5A TO220-3
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    DigiKey KSD362RTU Tube 1,000
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    Fairchild Semiconductor Corporation KSD362R

    Power Bipolar Transistor, 5A, 70V, NPN, TO-220AB, 3 Pin '
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    Rochester Electronics KSD362R 1,170 1
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    Fairchild Semiconductor Corporation KSD362RTU

    Power Bipolar Transistor, 5A, 70V, NPN, TO-220AB, 3 Pin '
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Rochester Electronics KSD362RTU 190 1
    • 1 $0.4225
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    KSD362 Datasheets (10)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    KSD362 Fairchild Semiconductor NPN Epitaxial Silicon Transistor Original PDF
    KSD362 Fairchild Semiconductor NPN EPITAXIAL SILICON TRANSISTOR Scan PDF
    KSD362 Motorola Motorola Semiconductor Data & Cross Reference Book Scan PDF
    KSD362 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    KSD362 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    KSD362 Samsung Electronics NPN (B/W TV HORIZONTAL DEFLECTION OUTPUT) Scan PDF
    KSD362N Fairchild Semiconductor NPN Epitaxial Silicon Transistor Original PDF
    KSD362O Fairchild Semiconductor NPN Epitaxial Silicon Transistor Original PDF
    KSD362R Fairchild Semiconductor NPN Epitaxial Silicon Transistor Original PDF
    KSD362RTU Fairchild Semiconductor NPN Epitaxial Silicon Transistor Original PDF

    KSD362 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    KSD362

    Abstract: No abstract text available
    Text: KSD362 KSD362 B/W TV Horizontal Deflection Output • Collector-Base Voltage : VCBO=150V • Collector Current : IC=5A • Collector Dissipation : PC=40W TC=25°C TO-220 1 1.Base 2.Collector 3.Emitter NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted


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    PDF KSD362 O-220 KSD362

    Untitled

    Abstract: No abstract text available
    Text: KSD362 NPN EPITAXIAL SILICON TRANSISTOR B/W TV HORIZONTAL DEFLECTION OUTPUT TO-220 • Collector-Base Voltage: VCBO=150V • Collector Current: IC=5A • Collector Dissipation: PC=40W TC=25°C ABSOLUTE MAXIMUM RATINGS Characteristic Symbol Collector-Base Voltage


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    PDF KSD362 O-220

    Ic 2050

    Abstract: KSD362 NPN transistor collector base and emitter transistor b 40 Ic-5A datasheet
    Text: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor KSD362 DESCRIPTION •Collector-Base Breakdown Voltage: V BR CBO= 150V(Min) ·Collector Current- IC= 5A ·Collector Power Dissipation: PC= 40W@ TC= 25℃ APPLICATIONS ·Designed for B/W TV horizontal deflection output applications.


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    PDF KSD362 Ic 2050 KSD362 NPN transistor collector base and emitter transistor b 40 Ic-5A datasheet

    POWER TRANSISTOR Cross

    Abstract: No abstract text available
    Text: KSD362 KSD362 B/W TV Horizontal Deflection Output • Collector-Base Voltage : VCBO=150V • Collector Current : IC=5A • Collector Dissipation : PC=40W TC=25°C TO-220 1 1.Base 2.Collector 3.Emitter NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted


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    PDF KSD362 O-220 POWER TRANSISTOR Cross

    fjaf6812

    Abstract: tip41 darlington fjaf6920 BUT12(A)F KSA1010 transistor bd140-15 bu408 equivalent FJL6920 equivalent fjl6820 FJL6920
    Text: Discrete Bipolar Power Transistor – General Purpose Part Number IC A VCEO (V) VCBO (V) VEBO (V) PC (W) hFE VCE (sat) Min Max @ IC (A) Typ (V) Max (V) TO-126 NPN Configuration KSC2682 0.1 180 180 5 8 100 320 0.01 0.12 0.5 KSC3502 0.1 200 200 5 5 40 320


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    PDF O-126 KSC2682 KSC3502 KSC2258 KSC2258A KSC3503 KSC3953 KSC2688 BD150 KSC5305D fjaf6812 tip41 darlington fjaf6920 BUT12(A)F KSA1010 transistor bd140-15 bu408 equivalent FJL6920 equivalent fjl6820 FJL6920

    BJT BD139

    Abstract: TIP416 ksh200 equivalent BD243 ksh50 power BJT BD242 tip426 BD53 kse13003
    Text: Discrete Power BJT General Purpose Products IC A VCEO (V) VCBO (V) VEBO (V) hFE PC (W) VCE (sat) Min Max @ IC (A) Typ (V) Max (V) TO-126 NPN Configuration KSC2682 0.1 180 180 5 8 100 320 0.01 0.12 0.5 KSC3502 0.1 200 200 5 5 40 320 0.01 - 0.6 KSC2258 0.1


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    PDF O-126 KSC2682 KSC3502 KSC2258 KSC2258A KSC3503 KSC3953 KSC2688 BD157 2JD210 BJT BD139 TIP416 ksh200 equivalent BD243 ksh50 power BJT BD242 tip426 BD53 kse13003

    sn76131

    Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
    Text: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157


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    PDF 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 sn76131 tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B

    BUV48I

    Abstract: BU808DXI BD699 buv18a BD241CFI transistor 2SA1046 BUW52I BU808DFI equivalent BU724AS 2SA1046
    Text: BIPOLAR TRANSISTOR INTRODUCTION TO BIPOLAR CROSS REFERENCE In order to improve our overall service, SGS-THOMSON has introduced a system of preferred transistor sales types. The following cross-reference is intended as a guide to identify sales types that may be suitable


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    PDF 2N3016 2N3021 2N3022 2N3023 2N3024 2N3025 2N3026 2N3055 2N3076 2N3171 BUV48I BU808DXI BD699 buv18a BD241CFI transistor 2SA1046 BUW52I BU808DFI equivalent BU724AS 2SA1046

    2N5657 equivalent

    Abstract: 2SA1046 BU326 BU108 BU100 2SC2331 Y tip47 419 2N3792 application notes
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N5655 2N5656 2N5657 Plastic NPN Silicon High-Voltage Power Transistor . . . designed for use in line–operated equipment such as audio output amplifiers; low–current, high–voltage converters; and AC line relays.


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    PDF 2N5655 2N5656 2N5657 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B 2N5657 equivalent 2SA1046 BU326 BU108 BU100 2SC2331 Y tip47 419 2N3792 application notes

    MJE494

    Abstract: 2SC1419 BD 804 2SD675 MJE104 BD581 BD135 CURVES MJ1000 DTS-4041 2N5037
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BD157 BD158 BD159 Plastic Medium Power NPN Silicon Transistor . . . designed for power output stages for television, radio, phonograph and other consumer product applications. 0.5 AMPERE POWER TRANSISTORS NPN SILICON 250 – 300 – 350 VOLTS


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    PDF BD157 BD158 BD159 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B MJE494 2SC1419 BD 804 2SD675 MJE104 BD581 BD135 CURVES MJ1000 DTS-4041 2N5037

    2SD669 equivalent

    Abstract: BD801 BDY29 equivalent BU108 2SC2080 2SD436 2N6021 BD345 tip122 D-PAK package 2SD544
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N6609 See 2N3773 Darlington Silicon Power Transistors 2N6667 2N6668 . . . designed for general–purpose amplifier and low speed switching applications. • High DC Current Gain — hFE = 3500 (Typ) @ IC = 4 Adc • Collector–Emitter Sustaining Voltage — @ 200 mAdc


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    PDF 2N6609 2N3773) 2N6667 2N6668 220AB 2N6387, 2N6388 2SD669 equivalent BD801 BDY29 equivalent BU108 2SC2080 2SD436 2N6021 BD345 tip122 D-PAK package 2SD544

    2SC495

    Abstract: NSP41A BU108 transistor BD614 MOTOROLA 2SA663 BD4122 BD661 MJ1000 NSP2100 D45VH4 similar
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJF6107 Power Transistor For Isolated Package Applications PNP SILICON POWER TRANSISTOR 7 AMPERES 70 VOLTS 34 WATTS Designed for general–purpose amplifier and switching applications, where the mounting surface of the device is required to be electrically isolated from the heatsink


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    PDF MJF6107 2N6107 E69369, TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B 2SC495 NSP41A BU108 transistor BD614 MOTOROLA 2SA663 BD4122 BD661 MJ1000 NSP2100 D45VH4 similar

    "Tektronix 475"

    Abstract: equivalent 2n6488 TIP42C EQUIVALENT BU108 motorola darlington power transistor motorola 266 TO-204AA transistor D45H11 equivalent replacement pnp bux TRANSISTOR REPLACEMENT table for transistor tip3055 equivalent
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BUX48 BUX48A SWITCHMODE II Series NPN Silicon Power Transistors 15 AMPERES NPN SILICON POWER TRANSISTORS 400 AND 450 VOLTS V BR CEO 850 – 1000 VOLTS V(BR)CEX 175 WATTS The BUX 48/BUX 48A transistors are designed for high–voltage, high–speed,


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    PDF 48/BUX BUX48 BUX48A AMPERE32 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A "Tektronix 475" equivalent 2n6488 TIP42C EQUIVALENT BU108 motorola darlington power transistor motorola 266 TO-204AA transistor D45H11 equivalent replacement pnp bux TRANSISTOR REPLACEMENT table for transistor tip3055 equivalent

    D42C5

    Abstract: transistor bc 647 2N5302 EB pin out TRANSISTOR tip2955 bs170 replacement 2sc141 BU108 bc 658 Motorola transistors MJE3055 TO 127 MC7812 TO-220
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA  Data Sheet SCANSWITCH Designer's MJE16204 NPN Bipolar Power Deflection Transistor For High and Very High Resolution Monitors The MJE16204 is a state–of–the–art SWITCHMODE bipolar power transistor. It is


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    PDF MJE16204 MJE16204 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B TIP75C D42C5 transistor bc 647 2N5302 EB pin out TRANSISTOR tip2955 bs170 replacement 2sc141 BU108 bc 658 Motorola transistors MJE3055 TO 127 MC7812 TO-220

    2N3055

    Abstract: BU108 AN415A MJE2955T ST BDX54 2n3055 audio amplifier application note BU326 BU100 mje13005 BDV64
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA PNP MJE2955T * NPN MJE3055T * Complementary Silicon Plastic Power Transistors . . . designed for use in general–purpose amplifier and switching applications. *Motorola Preferred Device • DC Current Gain Specified to 10 Amperes


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    PDF MJE2955T MJE3055T TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B TIP75C 2N3055 BU108 AN415A MJE2955T ST BDX54 2n3055 audio amplifier application note BU326 BU100 mje13005 BDV64

    2N5631 equivalent

    Abstract: 2N5630 "cross-reference" Chomerics BU108 2SA1046 tip122 tip127 audio amp BU326 BU100 2sd313 equivalent NPN/TIP42C as regulator
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN 2N5630 High-Voltage Ċ High Power Transistors 2N5631 PNP 2N6030 . . . designed for use in high power audio amplifier applications and high voltage switching regulator circuits. • High Collector Emitter Sustaining Voltage —


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    PDF 2N5630, 2N6030 2N5631, 2N6031 2N5630 2N5631 2N5631 equivalent 2N5630 "cross-reference" Chomerics BU108 2SA1046 tip122 tip127 audio amp BU326 BU100 2sd313 equivalent NPN/TIP42C as regulator

    BD179-10 equivalent

    Abstract: BU108 2SA1046 2SC7 BDX54 BUX98A BU326 BU100 bul1
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BD179 BD179-10 Plastic Medium Power Silicon NPN Transistor 3.0 AMPERES POWER TRANSISTORS NPN SILICON 80 VOLTS 30 WATTS . . . designed for use in 5.0 to 10 Watt audio amplifiers and drivers utilizing complementary or quasi complementary circuits.


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    PDF BD179 BD180 BD179-10 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A BD179-10 equivalent BU108 2SA1046 2SC7 BDX54 BUX98A BU326 BU100 bul1

    sec tip41c

    Abstract: MJE493 2SC1419 2sc3281 2n3055 audio output circuit BDW93 MJ1000 BDW83 buv98a cross reference 2SC1943
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN MJL3281A* PNP MJL1302A*  Data Sheet Designer's Complementary NPN-PNP Silicon Power Bipolar Transistor *Motorola Preferred Device 15 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 200 VOLTS 200 WATTS • The MJL3281A and MJL1302A are PowerBase power transistors for high power


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    PDF MJL3281A MJL1302A MJL3281A* MJL1302A* TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A sec tip41c MJE493 2SC1419 2sc3281 2n3055 audio output circuit BDW93 MJ1000 BDW83 buv98a cross reference 2SC1943

    Untitled

    Abstract: No abstract text available
    Text: KSD362 NPN EPITAXIAL SILICON TRANSISTOR B/W TV HORIZONTAL DEFLECTION OUTPUT • Collector-Base Voltage: V Cb o = 1 5 0 V • Collector Current: lc=5A • Collector Dissipation: Pc=40W Tc=25°C ABSOLUTE MAXIMUM RATINGS Rating Unit Collector-Base Voltage Characteristic


    OCR Scan
    PDF KSD362

    Untitled

    Abstract: No abstract text available
    Text: KSD362 NPN EPITAXIAL SILICON TRANSISTOR B/W TV HORIZONTAL DEFLECTION OUTPUT TO-220 • Collector-Base Voltage VCbo=150V • Collector Current lc =5A • Collector Dissipation PC=40W Tc =25°C ABSOLUTE MAXIMUM RATINGS Characteristic Symbol Rating Unit Collector-Base Voltage


    OCR Scan
    PDF KSD362 O-220

    Untitled

    Abstract: No abstract text available
    Text: KSD362 NPN EPITAXIAL SILICON TRANSISTOR B/W TV HORIZONTAL DEFLECTION OUTPUT • C ollector-B ase Voltage: V Cb o = 1 5 0 V • C ollecto r C urrent: lc=5A • C ollecto r D issipation: P c= 4 0 W T c=25°C ABSOLUTE MAXIMUM RATINGS Rating Unit C ollector-B ase Voltage


    OCR Scan
    PDF KSD362

    1B01A

    Abstract: TERCOM samsung tv KSB596 KSD362 KSD363 KSD526 k 4145 transistor
    Text: S A M S U N G SE MI CONDUCTOR INC KSD362 14E D | 7*1{,43,4a Ü007t,00 4 | NPN EPITAXIAL SILICON TRANSISTOR B/W TV HORIZONTAL DEFLECTION OUTPUT • Collector-Base Voltage Vcao=150V • Collector Current lc =5A • Collector Dissipation PC=40W Tc =25°C TO-220


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    PDF Q007t KSD362 1B01A TERCOM samsung tv KSB596 KSD363 KSD526 k 4145 transistor

    Untitled

    Abstract: No abstract text available
    Text: KSD362 NPN EPITAXIAL SILICON TRANSISTOR B/W TV HORIZONTAL DEFLECTION OUTPUT • Collector-Base Voltage VCeo=150V • Collector Current lc=5A • Collector Dissipation Pc=40W Tc=25'C ABSOLUTE MAXIMUM RATINGS Characteristic Symbol Collector-Base Voltage VcBQ


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    PDF KSD362

    NPN transistor collector base and emitter 100V

    Abstract: KSD362
    Text: KSD362 NPN EPITAXIAL SILICON TRANSISTOR B/W TV HORIZONTAL DEFLECTION OUTPUT • C ollector-B ase Voltage: V Cb o = 1 5 0 V • C ollecto r Current: lc=5A • C ollecto r D issipation: Pc=40W Tc=25°C ABSOLUTE MAXIMUM RATINGS Rating Unit C ollector-B ase Voltage


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    PDF KSD362 O-220 35rnA 200ms NPN transistor collector base and emitter 100V KSD362