Untitled
Abstract: No abstract text available
Text: IGC109T120T6RL IGBT4 Low Power Chip Features: • 1200V Trench + Field stop technology • low switching losses • positive temperature coefficient • easy paralleling This chip is used for: • low / medium power modules C Applications: • low / medium power drives
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IGC109T120T6RL
L7742C,
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PDF
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Untitled
Abstract: No abstract text available
Text: IGC109T120T6RM IGBT4 Medium Power Chip Features: • 1200V Trench + Field stop technology • low switching losses • soft turn off • positive temperature coefficient • easy paralleling Chip Type VCE ICn IGC109T120T6RM 1200V 110A This chip is used for:
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IGC109T120T6RM
IGC109T120T6RM
L7742B,
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IGC109T120T8RM
Abstract: No abstract text available
Text: IGC109T120T8RM IGBT4 Medium Power Chip Features: • 1200V Trench & Field stop technology low switching losses soft turn off positive temperature coefficient easy paralleling Qualified according to JEDEC for target applications Chip Type
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Original
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IGC109T120T8RM
IGC109T120T8RM
L7742U,
L7742O,
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PDF
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Untitled
Abstract: No abstract text available
Text: IGC109T120T6RM IGBT4 Medium Power Chip Features: • 1200V Trench + Field stop technology • low switching losses • soft turn off • positive temperature coefficient • easy paralleling Chip Type VCE ICn IGC109T120T6 RM 1200V 110A This chip is used for:
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Original
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IGC109T120T6RM
IGC109T120T6
L7742B,
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PDF
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Untitled
Abstract: No abstract text available
Text: IGC109T120T6RH IGBT4 High Power Chip Features: • 1200V Trench + Field stop technology • low VCE sat • soft turn off • positive temperature coefficient • easy paralleling Chip Type IGC109T120T6 RH VCE ICn 1200V 110A This chip is used for: • medium / high power modules
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Original
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IGC109T120T6RH
IGC109T120T6
L7742A,
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PDF
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Untitled
Abstract: No abstract text available
Text: IGC109T120T6RL IGBT4 Low Power Chip Features: • 1200V Trench + Field stop technology • low switching losses • positive temperature coefficient • easy paralleling This chip is used for: • low / medium power modules C Applications: • low / medium power drives
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Original
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IGC109T120T6RL
IGC109T120T6
L7742C,
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PDF
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Untitled
Abstract: No abstract text available
Text: IGC109T120T6RH IGBT4 High Power Chip Features: • 1200V Trench + Field stop technology • low VCE sat • soft turn off • positive temperature coefficient • easy paralleling Chip Type VCE ICn IGC109T120T6RH 1200V 110A This chip is used for: • medium / high power modules
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Original
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IGC109T120T6RH
IGC109T120T6RH
L7742
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PDF
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Untitled
Abstract: No abstract text available
Text: IGC109T120T8RM IGBT4 Medium Power Chip Features: • 1200V Trench & Field stop technology low switching losses soft turn off positive temperature coefficient easy paralleling Qualified according to JEDEC for target applications Chip Type
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Original
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IGC109T120T8RM
IGC109T120T8RM
L7742U,
L7742O,
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PDF
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Untitled
Abstract: No abstract text available
Text: IGC109T120T8RM IGBT4 Medium Power Chip Features: • 1200V Trench & Field stop technology low switching losses soft turn off positive temperature coefficient easy paralleling Qualified according to JEDEC for target applications Chip Type
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Original
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IGC109T120T8RM
IGC109T120T8RM
L7742U,
L7742O,
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PDF
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