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Samtec Inc HLS-0113-T-2 .100" SCREW MACHINE SOCKET ARRAY Free Sample
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	HLS-0113-T-2	Tube			17	1 - 10 - 100 $2.85765 1000 $2.85765 10000 $2.85765	Buy Now
Mouser Electronics	HLS-0113-T-2					1 $3.21 10 $3.21 100 $3.21 1000 $1.98 10000 $1.16	Get Quote
Samtec Inc HLS-0113-G-12 .100" SCREW MACHINE SOCKET ARRAY Free Sample
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	HLS-0113-G-12	Tube			17	1 - 10 - 100 $7.45765 1000 $7.45765 10000 $7.45765	Buy Now
Avnet Americas	HLS-0113-G-12	Tube			1	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Mouser Electronics	HLS-0113-G-12					1 $5.81 10 $5.81 100 $5.81 1000 $3.68 10000 $2.72	Get Quote
Master Electronics	HLS-0113-G-12					1 - 10 - 100 $5.78 1000 $3.78 10000 $2.18	Buy Now
Sager	HLS-0113-G-12				1	1 $5.81 10 $5.81 100 $4.65 1000 $3.36 10000 $3.36	Buy Now
Samtec Inc HLS-0113-TT-11 .100" SCREW MACHINE SOCKET ARRAY Free Sample
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	HLS-0113-TT-11	Tube			17	1 - 10 - 100 $2.25235 1000 $2.25235 10000 $2.25235	Buy Now
Mouser Electronics	HLS-0113-TT-11					1 $2.47 10 $2.47 100 $2.47 1000 $1.52 10000 $0.89	Get Quote
Master Electronics	HLS-0113-TT-11					1 - 10 - 100 $2.327 1000 $1.754 10000 $0.909	Buy Now
Sager	HLS-0113-TT-11				1	1 $2.47 10 $2.47 100 $1.71 1000 $1.21 10000 $1.1	Buy Now
Samtec Inc HLS-0113-G-32 Conn Socket Strip SKT 13 POS 2.54mm Solder ST Thru-Hole - Bulk (Alt: HLS-0113-G-32) Free Sample
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	HLS-0113-G-32	Bulk			500	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Master Electronics	HLS-0113-G-32					1 - 10 - 100 - 1000 $3.09 10000 $2.92	Buy Now
Sager	HLS-0113-G-32					1 - 10 - 100 - 1000 - 10000 -	Buy Now
Samtec Inc HLS-0113-G-11 Conn Socket Strip SKT 13 POS 2.54mm Solder ST Thru-Hole - Bulk (Alt: HLS-0113-G-11) Free Sample
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	HLS-0113-G-11	Bulk			500	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Master Electronics	HLS-0113-G-11					1 - 10 - 100 - 1000 $2.46 10000 $2.33	Buy Now
Sager	HLS-0113-G-11					1 - 10 - 100 - 1000 - 10000 -	Buy Now

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LS0113 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
pn4122 Abstract: PN3569 2N4402 2N4403 PN4250 MMBT4402 Text: bflE D • LS01130 003^520 Tb7 « N S C S General Purpose Amplifiers and Switches continued Devices (Volts) Min 40 ‘ NPN h fE@ lc k V CE0(smt) • ' PN P - - (mA) Max Min M ax NATL SENICON]) (DISCRETE ) fT @ lc mA (M Hz) Min mA MF (dB) Max P D (Amb) Package	OCR Scan	PDF	LS01130 PN3567 PN3569 TIS97 TN2219A T0-92 O-237 O-236* pn4122 2N4402 2N4403 PN4250 MMBT4402
NZT6714 Abstract: TN6714A Text: TN6714AI NZT6714 tu D iscrete P O W E R & S ig n a l Technologies National S e m i c o n d u c t o r ' " TN6714A NZT6714 SOT-223 NPN General Purpose Amplifier This device is designed for general purpose medium power amplifiers and switches requiring collector currents to 1.5 A.	OCR Scan	PDF	NZT6714 OT-223 bS0113D O-226 b501130 NZT6714 TN6714A
27E SOT-23 Abstract: 27E 9 sot23 CK200 501MT BCW68G T092 Text: BCW68G ^ Discrete POWER & Signal Technologies Æ^m N a t i o n a l Semiconductor' BCW68G PNP General Purpose Amplifier This device is designed for general purpose amplifier and switching applications at currents to 500 mA. Sourced from Process 63. A b s o lu t e	OCR Scan	PDF	BCW68G OT-23 b5D1130 LS01130 27E SOT-23 27E 9 sot23 CK200 501MT BCW68G T092
biss 0001 Abstract: NDH832P 006CI Text: J k J National S emi co n d u c t o r " NDH832P P-Channel Enhancement Mode Field Effect Transistor General Description Features These P-Channel enhancement mode power field effect transistors are produced using National's proprietary, high cell density, DMOS technology.	OCR Scan	PDF	NDH832P b501130 biss 0001 NDH832P 006CI
NZT6729 Abstract: TN6729A Text: TN6729A / NZT6729 & D iscrete PO W ER & S ig n a l Technologies National Semiconductor" NZT6729 TN6729A SOT-223 PNP General Purpose Amplifier This device is designed for general purpose medium power amplifiers and switches requiring collector currents to 800 mA.	OCR Scan	PDF	TN6729A NZT6729 O-226 OT-223 004G745 b5D1130 DM0743 NZT6729 TN6729A
DIODE 3L2 Abstract: Complementary MOSFET Half Bridge Text: e? National February 1996 Semiconductor' NPS8852H Complementary MOSFET Half Bridge Features General Description These Complementary M O SFE T half bridge devices are produced using National's proprietary, high cell density, D M O S technology. This very high density process is especially tailored to	OCR Scan	PDF	NPS8852H b5D113Q DIODE 3L2 Complementary MOSFET Half Bridge
NDP506BL Abstract: Zener diode DW NDP506A NDB506AL NDB506BL NDP506AL Text: National Semiconductor" May 1995 NDP506AL / NDP506BL NDB506AL / NDB506BL N-Channel Logic Level Enhancement I ide Field Effect Transistor General Description Features These logic level N-Channel enhancement mode power field effect transistors are produced using	OCR Scan	PDF	NDP506AL NDP506BL NDB506AL NDB506BL S01130 0GM0215 bSD1130 Zener diode DW NDP506A NDB506BL
supersot-3 Abstract: 2T3 transistor NDS335N FR 014 S0113D Text: M ay 19 96 PRELIMINARY N at i o n a l Semiconductor~ NDS335N N-Channel Logic Level Enhancement Mode Field Effect Transistor Features General Description These N -Channel logic level enhancement mode power field effect transistors are produced using Nationals proprietary, high cell density, DMOS	OCR Scan	PDF	NDS335N OT-23 OT-23) NDS33SN supersot-3 2T3 transistor NDS335N FR 014 S0113D
L50Q Abstract: BCW65C Text: S e m i c o n d u c t o r “ BCW65C D iscrete P O W ER & S ig n a l Technologies National BCW65C M a rk : E D NPN General Purpose Amplifier This device is designed for general purpose amplifier applications at collector currents to 500 mA. Sourced from Process 19.	OCR Scan	PDF	BCW65C LS01130 004D673 L50Q BCW65C
TN3440A Abstract: No abstract text available Text: S e m i c o n d u c t o r TN3440A & D iscrete P O W ER & S ig n a l T echnologies . National T N 3440A NPN General Purpose Amplifier T h is d e v ic e is d e s ig n e d for u se in h o rizo n tal driver, c la s s A off-line a m p lifier an d off-line sw itching a pp licatio ns. S o u rc e d from P ro c e s s 36.	OCR Scan	PDF	TN3440A LSD1130 0Q40bm O-226 L50113D D01DL42 TN3440A
2n3904 spice model Abstract: 2N3904 equivalent 2N3904 2n3904 spice model of 2n3904 MMBT3904 2N39041 2N3904 b10 50113G L50113 Text: 2N3904 MMBT3904 SOT-23 B Mark: 1A MMPQ3904 PZT3904 SOT-223 SOIC-16 NPN General Purpose Amplifier This device is designed as a general purpose amplifier and switch. The useful dynamic range extends to 100 mA as a switch and to 100 M H z as an amplifier. Sourced from Process 23.	OCR Scan	PDF	2N3904 MMBT3904 MMPQ3904 PZT3904 2N3904 MMBT3904 OT-23 MMPQ3904 SOIC-16 2n3904 spice model 2N3904 equivalent 2n3904 spice model of 2n3904 2N39041 2N3904 b10 50113G L50113
Supersot6 Abstract: ld32a NDC651N 55sc Text: National • Semiconductor" March 1996 NDC651N N-Channel Logic Level Enhancement Mode Field Effect Transistor Features General Description ■ 3.2A, 30V. Ft,*, , = 0.09£1 @ VGS = 4.5V R d sio n i = 0 .0 6 0 @ VGS = 10V. These N-Channel logic level enhancement mode	OCR Scan	PDF	NDC651N bSD113D Supersot6 ld32a NDC651N 55sc
FLC 100 Abstract: 728p cny 76 200U 2N3906 MMBT3906 MMPQ3906 PZT3906 SOIC-16 Text: 2N39061 MMBT39061 MMPQ39061 PZT3906 & Discrete POWER & Signal Technologies National Semiconductor” MMBT3906 2N3906 SOT-23 B Mark: 2A MMPQ3906 PZT3906 SOT-223 SOIC-16 PNP General Purpose Amplifier This device is designed for general purpose amplifier and switch	OCR Scan	PDF	2N3906 MMPQ3906 MMBT3906 PZT3906 SOIC-16 OT-223 rO-92 b5D113D 0QMQb71 FLC 100 728p cny 76 200U 2N3906 MMBT3906 MMPQ3906 PZT3906 SOIC-16
transistor t04 76 Abstract: GV 475 diode transistor T04 NDB6060 004027S Text: Na t io n a I Sem iconductor~ M arch 19 96 N DP6060/ NDB6060 N-Channel Enhancement Mode Field Effect Transistor General Description Features These N-Channel enhancement mode power field effect transistors are produced using National's proprietary, high cell density, DMOS technology.	OCR Scan	PDF	NDP6060/NDB6060 025ft b50113G 0DMQ27H bS01130 004027S transistor t04 76 GV 475 diode transistor T04 NDB6060

NDS9405 Abstract: IAT50 Text: May 1996 N ationa I Semiconductor' NDS9405 Single P-Channel Enhancement Mode Field Effect Transistor General Description Features These P-Channel enhancement mode power field effect transistors are produced using National's proprietary, high cell density, DMOS technology.	OCR Scan	PDF	NDS9405 bSD1130 031tmb NDS9405 IAT50
BF244A Abstract: BF244B BF244C "N-Channel JFET" BF244 OF BF244A OR B N-CHANNEL JFET Text: " BF244A BF244B BF244C BF244A / BF244B / BF244C u ct o r D isc re te POW ER &. S ig n a l T ech n ologies N-Channel JFET RF Amplifier This device is designed for RF amplifier and mixer and applications operating up to 450 MHz, and or analog switching requiring low	OCR Scan	PDF	BF244A BF244B BF244C bSD113D BF244C "N-Channel JFET" BF244 OF BF244A OR B N-CHANNEL JFET
Untitled Abstract: No abstract text available Text: Type No. IRF232 IRF630 IRF631 IRF632 IRF633 9-16 2N6759 2N6760 IRF330 IRF331 IRF333 IRF730 IRF731 TO-204AA 42 T 02 04A A (42) TO-220 (37) TO-220 (37) TO-220 (37) T0-220 (37) TO-220 (37) 70220 (37) T0204AA (42) TO-204AA (42) T 02 04A A (42) T0-204AA (42)	OCR Scan	PDF	IRF232 IRF233 IRF630 IRF631 IRF632 IRF633 MTP12N18 MTP12N20 2N6759 2N6760
diode e 1205 Abstract: mmbd1201 Text: tß S e m i c o n d u c t o r " MMBD1201 /1203 /1204 /1205 ÜL 24 " E 0 " M A R K IN G SOT-23 High Conductance Ultra Fast Diode Sourced from Process 1P. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted Parameter Value Units Wiv Working Inverse Voltage	OCR Scan	PDF	MMBD1201 OT-23 L5G113D diode e 1205
NDS9936 Abstract: Vi46 ab-1 national Text: N at i o n a l tß May 1996 Semiconductor" NDS9936 Dual N-Channel Enhancement Mode Field Effect Transistor General Description Features These N-Channel enhancement mode power field effect transistors are produced using National's proprietary, high cell density, DMOS technology.	OCR Scan	PDF	NDS9936 LS01130 125-C bS01130 NDS9936 Vi46 ab-1 national
NDB7061 Abstract: NDP7061 LD 8105 d0403 Text: National Semiconductor" M ay 1 9 9 6 NDP7061 / NDB7061 N-Channel Enhancement Mode Field Effect Transistor General Description Features These N-Channel enhancement mode power field effect transistors are produced using National's proprietary, high cell density, DMOS technology.	OCR Scan	PDF	NDP7061 NDB7061 Ru99ed D04031L LD 8105 d0403
PN4860 Abstract: PN4857 2N5639 J106 PN4858 2N5555 2N5638 2N5640 J105 J107 Text: N o. P kg . Signal T T r^ t ? ? ? ? 00 ^ in t" io ^ io CM CM CM CM O O) o CM CM CN CM O O O O CM CM CM CM 0) 0 ) 0 0) CM CM CN CN 0)0 in in in in in in in in in o ^ <5 q o to in co 2 2 in ^ o m 2 2 2 s £ ! °9 <9 _ O _ O _ O CN *- o o o in s in « in 50	OCR Scan	PDF	2N5555 2N5638 2N5639 2N5640 PN4858 PN4859 PN4860 PN4861 PN4857 J106 J105 J107
NDS9943 Abstract: 56 pF CH N-8C Text: N a t ion a I Semiconductor" M ay 1996 NDS9943 Dual N & P-Channei Enhancement Mode Field Effect Transistor General Description Features These du a l N- and P-Channel enhancem ent m ode p o w e r fie ld effect transistors are produced using N a tio n a l's p ro p rie ta ry, high cell density, DMOS	OCR Scan	PDF	NDS9943 bSD113G 0D400Q2 NDS9943 56 pF CH N-8C
mmbt2906a Abstract: MMBTL51 MMBT2904A Text: ^Sem iconductor SEMICOND Surface Mount Transistors General Purpose Amplifiers and Switches—PNP MMBT 2904 TO-236 49 60 40 5 MMBT2904A TO-236 (49) 60 40 5 TO-236 (49) 60 MMBT2905A TO-236 (49) 60 MMBT 2906 TO-236 (49) 60 MMBT 2906A TO-236 (49) 60 MMBT 2905	OCR Scan	PDF	O-236 mmbt2906a MMBTL51 MMBT2904A
mpsa42 "sot23" Abstract: MMBTA42 MARK MPSA42 NATIONAL NATIONAL MPSA42 BD004 National semi spice model MPSA42 sot Text: MPSA42 / MMBTA42 / PZTA42 e? Discrete POWER & Signal Technologies National Semi conductor' PZTA42 MMBTA42 MPSA42 SOT-23 B SOT-223 Mark: 1D NPN High Voltage Amplifier This device is designed for application as a video output to drive color C RT and other high voltage applications. Sourced	OCR Scan	PDF	MPSA42 MMBTA42 PZTA42 MPSA42 MMBTA42 OT-23 OT-223 mpsa42 "sot23" MMBTA42 MARK MPSA42 NATIONAL NATIONAL MPSA42 BD004 National semi spice model MPSA42 sot

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LS0113 Price and Stock

Samtec Inc HLS-0113-T-2

Samtec Inc HLS-0113-G-12

Samtec Inc HLS-0113-TT-11

Samtec Inc HLS-0113-G-32

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LS0113 Datasheets Context Search

pn4122

NZT6714

27E SOT-23

biss 0001

NZT6729

DIODE 3L2

NDP506BL

supersot-3

L50Q

TN3440A

2n3904 spice model

Supersot6

FLC 100

transistor t04 76

NDS9405

BF244A

Untitled

diode e 1205

NDS9936

NDB7061

PN4860

NDS9943

mmbt2906a

mpsa42 "sot23"