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    MARKING CODE J111 Search Results

    MARKING CODE J111 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    5446/BEA Rochester Electronics LLC 5446 - Decoder, BCD-To-7-Segment, With Open-Collector Outputs - Dual marked (M38510/01006BEA) Visit Rochester Electronics LLC Buy
    54LS190/BEA Rochester Electronics LLC 54LS190 - BCD Counter, 4-Bit Synchronous Up/Down, With Mode Control - Dual marked (M38510/31513BEA) Visit Rochester Electronics LLC Buy
    5447/BEA Rochester Electronics LLC 5447 - Decoder, BCD-To-7-Segment, With Open-Collector Outputs - Dual marked (M38510/01007BEA) Visit Rochester Electronics LLC Buy
    TC4511BP Toshiba Electronic Devices & Storage Corporation CMOS Logic IC, BCD-to-7-Segment Decoder, DIP16 Visit Toshiba Electronic Devices & Storage Corporation
    5962-8950303GC Rochester Electronics LLC ICM7555M - Dual Marked (ICM7555MTV/883) Visit Rochester Electronics LLC Buy

    MARKING CODE J111 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    TO-236 MARKING CODE C3

    Abstract: J112 equivalent vishay siliconix code marking to-92 TO226AA J112 TO92 j112 siliconix
    Text: J/SST111 Series Vishay Siliconix N-Channel JFETs J111 SST111 J112 SST112 J113 SST113 PRODUCT SUMMARY Part Number Vcs oft (V) J/SST111 J/SST112 -3 -1 J/SST113 r DS(on) Max (Q) lo(oft) Typ (pA) ton Typ (ns) to-10 to-5 30 5 4 50 5 4 < -3 100 5 4 FEATURES BENEFITS


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    J/SST111 J/SST112 J/SST113 SST111 SST112 SST113 to-10 04-Jun-01 TO-236 MARKING CODE C3 J112 equivalent vishay siliconix code marking to-92 TO226AA J112 TO92 j112 siliconix PDF

    J111

    Abstract: J112 J113 SST111 SST112 SST113 j113 equivalent 4858a
    Text: J/SST111 Series Vishay Siliconix N-Channel JFETs J111 SST111 J112 SST112 J113 SST113 PRODUCT SUMMARY Part Number VGS off (V) rDS(on) Max (W) ID(off) Typ (pA) tON Typ (ns) J/SST111 –3 to –10 30 5 4 J/SST112 –1 to –5 50 5 4 J/SST113 v–3 100 5 4 FEATURES


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    J/SST111 SST111 SST112 SST113 J/SST111 J/SST112 J/SST113 J111 J112 J113 SST111 SST112 SST113 j113 equivalent 4858a PDF

    J113 equivalent

    Abstract: J113 AN105 J111 J112 SST111 SST112 SST113 V31005
    Text: J/SST111 Series Siliconix NĆChannel JFETs J111 J112 J113 Product Summary SST111 SST112 SST113 Part Number VGS off (V) rDS(on) Max (W) ID(off) Typ (pA) tON Typ (ns) J/SST111 -3 to -10 30 5 4 J/SST112 -1 to -5 50 5 4 J/SST113 v-3 100 5 4 J/SST111, For applications information see AN105, page 22.


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    J/SST111 SST111 SST112 SST113 J/SST111 J/SST112 J/SST113 J/SST111, AN105, J113 equivalent J113 AN105 J111 J112 SST111 SST112 SST113 V31005 PDF

    J111

    Abstract: J112 J113 SST111 SST112 SST113 marking code J111 device code J111
    Text: J/SST111 Series N-Channel JFETs J111 J112 J113 SST111 SST112 SST113 Product Summary Part Number VGS off (V) rDS(on) Max (W) ID(off) Typ (pA) tON Typ (ns) 30 5 4 J/SST111 –3 to –10 J/SST112 –1 to –5 50 5 4 J/SST113 v–3 100 5 4 Features Benefits Applications


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    J/SST111 SST111 SST112 SST113 J/SST111 J/SST112 J/SST113 J111 J112 J113 SST111 SST112 SST113 marking code J111 device code J111 PDF

    SST111

    Abstract: J111 J112 J113 SST112 SST113 device code J111
    Text: J/SST111 Series N-Channel JFETs J111 J112 J113 SST111 SST112 SST113 Product Summary Part Number VGS off (V) rDS(on) Max (W) ID(off) Typ (pA) tON Typ (ns) 30 5 4 J/SST111 –3 to –10 J/SST112 –1 to –5 50 5 4 J/SST113 v–3 100 5 4 Features Benefits Applications


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    J/SST111 SST111 SST112 SST113 J/SST111 J/SST112 J/SST113 SST111 J111 J112 J113 SST112 SST113 device code J111 PDF

    to236

    Abstract: 37652 Siliconix N-Channel JFETs J/SST113 J113 equivalent marking j112 SST111 C1 AN105 J111 J112
    Text: J/SST111 Series N-Channel JFETs J111 SST111 J112 SST112 J113 SST113 Product Summary Part Number VGS off (V) rDS(on) Max (W) ID(off) Typ (pA) tON Typ (ns) J/SST111 –3 to –10 30 5 4 J/SST112 –1 to –5 50 5 4 J/SST113 v–3 100 5 4 J/SST111, For applications information see AN105, page 1.


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    J/SST111 SST111 SST112 SST113 J/SST111 J/SST112 J/SST113 J/SST111, AN105, to236 37652 Siliconix N-Channel JFETs J/SST113 J113 equivalent marking j112 SST111 C1 AN105 J111 J112 PDF

    SST113

    Abstract: SST112 J111 J112 J113 SST111
    Text: J/SST111 Series Vishay Siliconix N-Channel JFETs J111 SST111 J112 SST112 J113 SST113 PRODUCT SUMMARY Part Number VGS off (V) rDS(on) Max (W) ID(off) Typ (pA) tON Typ (ns) J/SST111 –3 to –10 30 5 4 J/SST112 –1 to –5 50 5 4 J/SST113 v–3 100 5 4 FEATURES


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    J/SST111 SST111 SST112 SST113 J/SST111 J/SST112 J/SST113 08-Apr-05 SST113 SST112 J111 J112 J113 SST111 PDF

    marking code J111

    Abstract: J113 equivalent c3 marking J/SST113 SST111 C1 to236 J111 J112 J113 SST111
    Text: J/SST111 Series Vishay Siliconix N-Channel JFETs J111 SST111 J112 SST112 J113 SST113 PRODUCT SUMMARY Part Number VGS off (V) rDS(on) Max (W) ID(off) Typ (pA) tON Typ (ns) J/SST111 –3 to –10 30 5 4 J/SST112 –1 to –5 50 5 4 J/SST113 v–3 100 5 4 FEATURES


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    J/SST111 SST111 SST112 SST113 J/SST111 J/SST112 J/SST113 18-Jul-08 marking code J111 J113 equivalent c3 marking J/SST113 SST111 C1 to236 J111 J112 J113 SST111 PDF

    J112 jfet

    Abstract: J112G J113 equivalent datasheet jfet J111 transistor application note jfet J111 transistor J111 data sheet marking j112 j112 fet transistor J112 J112
    Text: J111, J112 JFET Chopper Transistors N−Channel — Depletion Features • Pb−Free Packages are Available* http://onsemi.com 1 DRAIN MAXIMUM RATINGS Rating Symbol Value Unit Drain −Gate Voltage VDG −35 Vdc Gate −Source Voltage VGS −35 Vdc Gate Current


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    J111/D J112 jfet J112G J113 equivalent datasheet jfet J111 transistor application note jfet J111 transistor J111 data sheet marking j112 j112 fet transistor J112 J112 PDF

    j112

    Abstract: j112g J111
    Text: J111, J112 JFET Chopper Transistors N−Channel — Depletion Features • Pb−Free Packages are Available* http://onsemi.com 1 DRAIN MAXIMUM RATINGS Rating Symbol Value Unit Drain −Gate Voltage VDG −35 Vdc Gate −Source Voltage VGS −35 Vdc Gate Current


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    J111/D j112 j112g J111 PDF

    TRANSISTOR AH-16

    Abstract: TRANSISTOR bH-16 equivalent of transistor bc212 bc 214 transistor marking code SOT-23 2FX 2907A PNP bipolar transistors SILICON TRANSISTOR FS 2025 marking JV SOD323 bf245 replacement GI 312 diode msd601
    Text: DL126/D Rev. 7, Nov-2001 Small-Signal Device Data Bipolar Transistors, JFETs and Diodes Small-Signal Device Data ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC SCILLC . SCILLC reserves the right to make changes without further


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    DL126/D Nov-2001 r14525 DL126 TRANSISTOR AH-16 TRANSISTOR bH-16 equivalent of transistor bc212 bc 214 transistor marking code SOT-23 2FX 2907A PNP bipolar transistors SILICON TRANSISTOR FS 2025 marking JV SOD323 bf245 replacement GI 312 diode msd601 PDF

    marking 513 SOD-323

    Abstract: transistor marking code SOT-23 2FX BC449 equivalent DTD113 BC548 hie hre hfe steel package MPSW45A replacement BC449A equivalent 2n4401 free transistor equivalent book power tmos BF256
    Text: DL126/D Rev. 7, Nov-2001 Small-Signal Device Data Bipolar Transistors, JFETs and Diodes Small-Signal Device Data ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC SCILLC . SCILLC reserves the right to make changes without further


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    DL126/D Nov-2001 r14525 DL126/D marking 513 SOD-323 transistor marking code SOT-23 2FX BC449 equivalent DTD113 BC548 hie hre hfe steel package MPSW45A replacement BC449A equivalent 2n4401 free transistor equivalent book power tmos BF256 PDF

    CBF493S

    Abstract: BC337 hie hre hfe BC449 equivalent transistor marking code SOT-23 2FX marking 513 SOD-323 bc213 equivalent MECL 10000 bc237c equivalent diode Marking code jv3 f BAV70 SOT-23 JJ
    Text: DL126/D Rev. 7, Nov-2001 Small-Signal Device Data Bipolar Transistors, JFETs and Diodes Small-Signal Device Data ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC SCILLC . SCILLC reserves the right to make changes without further


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    DL126/D Nov-2001 r14525 DL126/D CBF493S BC337 hie hre hfe BC449 equivalent transistor marking code SOT-23 2FX marking 513 SOD-323 bc213 equivalent MECL 10000 bc237c equivalent diode Marking code jv3 f BAV70 SOT-23 JJ PDF

    Untitled

    Abstract: No abstract text available
    Text: OD CO O CO RATING VO LTAG E 50V AC CURRENT 0. 3A co o APPLICABLE CONNECTOR O o O + CD STORAGE TEMPERATURE RANGE —1 o -35°C TO +85°C NOTES 1 1 OPERATING TEMPERATURE RANGE O o O A P P L IC A B L E S T A N D A R D D F17#(*) -*D S-0. 5V (*) SPECIFICATIONS


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    500MQ 32nrm PDF

    transistor J111

    Abstract: transistor J112 MARKING RK J113 SOT-23 marking M6 140 j112 m6 marking j-fet BSR58LT1
    Text: BSR58LT1 JFET Chopper Transistor N−Channel − Depletion MAXIMUM RATINGS Rating http://onsemi.com Symbol Value Unit Drain −Gate Voltage VDG −40 Vdc Gate −Source Voltage VGS −35 Vdc Gate Current IG 50 mAdc Total Device Dissipation @ TA = 25°C Derate above 25°C


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    BSR58LT1 OT-23 transistor J111 transistor J112 MARKING RK J113 SOT-23 marking M6 140 j112 m6 marking j-fet PDF

    z1834

    Abstract: BSJ111 BSJ113 Z183 Philips TO-92 MARKING CODE 3150si BSJ112 J111 J112 J113
    Text: • BSJ111 BSJ112 BSJ113 ^ 53=131 0017553 4 N AMER PHILIPS/DISCRETE 5SE D N-CHANNEL SILICON FIELD-EFFECT TRANSISTORS Symmetrical silicon n-channel junction FETs in plastic TO-92 envelopes. They are intended fo r applications such as analog switches, choppers, commutators etc.


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    BSJ111 BSJ112 BSJ113 BSJ113 z1834 Z183 Philips TO-92 MARKING CODE 3150si J111 J112 J113 PDF

    Untitled

    Abstract: No abstract text available
    Text: bbSBTSl Q0175S3 4 N AMER PHILIPS/DISCRETE 55E D BSJ111 BSJ112 BSJ113 JV N-CHANNEL SILICO N FIELD -EFFECT T R A N SIST O R S Symmetrical silicon n-channel junction FET s in plastic TO-92 envelopes. They are intended for applications such as analog switches, choppers, commutators etc.


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    Q0175S3 BSJ111 BSJ112 BSJ113 rBSJ113 PDF

    DELTA fan bfb

    Abstract: BC237 TRANSISTOR REPLACEMENT FOR 2N3053 BC547 REPLACE t1 bc140 BC108 motorola 2n2222 sot323 MOTOROLA LOT MARKINGS
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA RF Amplifier Transistor MPSH81 PNP Silicon COLLECTOR 3 Motorola Preferred Device 1 BASE 2 EMITTER 1 2 3 CASE 29–04, STYLE 2 TO–92 TO–226AA MAXIMUM RATINGS Rating Symbol Value Unit Collector – Emitter Voltage


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    MPSH81 226AA) MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 MV1642 DELTA fan bfb BC237 TRANSISTOR REPLACEMENT FOR 2N3053 BC547 REPLACE t1 bc140 BC108 motorola 2n2222 sot323 MOTOROLA LOT MARKINGS PDF

    BSR58LT1

    Abstract: No abstract text available
    Text: BSR58LT1 JFET Chopper Transistor N−Channel − Depletion Features • Pb−Free Package is Available http://onsemi.com MAXIMUM RATINGS 2 SOURCE Symbol Value Unit Drain −Gate Voltage VDG −40 Vdc Gate −Source Voltage VGS −35 Vdc Gate Current IG 50


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    BSR58LT1 BSR58LT1/D BSR58LT1 PDF

    application note jfet J111 transistor

    Abstract: BSR58LT1G M6 BSR58LT1G BSR58LT1 J111 J112 J113 m6 marking transistor sot-23 transistor J111 marking j112
    Text: BSR58LT1 JFET Chopper Transistor N−Channel − Depletion Features • Pb−Free Package is Available http://onsemi.com MAXIMUM RATINGS Rating 2 SOURCE Symbol Value Unit Drain −Gate Voltage VDG −40 Vdc Gate −Source Voltage VGS −35 Vdc Gate Current


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    BSR58LT1 BSR58LT1/D application note jfet J111 transistor BSR58LT1G M6 BSR58LT1G BSR58LT1 J111 J112 J113 m6 marking transistor sot-23 transistor J111 marking j112 PDF

    application note jfet J111 transistor

    Abstract: jfet J111 transistor transistor J111 BSR58LT1 transistor j113 j113 equivalent J111 J112 J113 CODE m6
    Text: BSR58LT1 JFET Chopper Transistor N–Channel – Depletion MAXIMUM RATINGS Rating http://onsemi.com Symbol Value Unit Drain–Gate Voltage VDG –40 Vdc Gate–Source Voltage VGS –35 Vdc Gate Current IG 50 mAdc Total Device Dissipation @ TA = 25°C Derate above 25°C


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    BSR58LT1 r14525 BSR58LT1/D application note jfet J111 transistor jfet J111 transistor transistor J111 BSR58LT1 transistor j113 j113 equivalent J111 J112 J113 CODE m6 PDF

    MSC2404

    Abstract: MPF3821 BC237 MPS8093 BCY72 MMBF4856 MAD130P MPS3866 bcy71 ALTERNATIVE BSS72
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA PNP RF Amplifier Transistor Surface Mount MSA1022-CT1 Motorola Preferred Device COLLECTOR 3 3 2 1 2 BASE 1 EMITTER MAXIMUM RATINGS TA = 25°C Rating Symbol Value Unit Collector–Base Voltage VCBO – 30 Vdc Collector–Emitter Voltage


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    MSA1022-CT1 Emitte218A MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 MV1642 MPF3821 BC237 MPS8093 BCY72 MMBF4856 MAD130P MPS3866 bcy71 ALTERNATIVE BSS72 PDF

    BF245

    Abstract: BC237 MSC2404 mps8093 bf244 MSA1022 MSC2295-BT1 msc2295 MAD1107P MPS6568
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN RF Amplifier Transistors Surface Mount COLLECTOR 3 MSC2295-BT1 MSC2295-CT1 Motorola Preferred Devices 3 2 BASE 1 EMITTER 2 1 MAXIMUM RATINGS TA = 25°C Rating Symbol Value Unit Collector–Base Voltage V(BR)CBO 30


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    MSC2295-BT1 MSC2295-CT1 MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 MV1642 BF245 BC237 mps8093 bf244 MSA1022 msc2295 MAD1107P MPS6568 PDF

    2N5458

    Abstract: BC237
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Single Silicon Switching Diodes These Silicon Epitaxial Planar Diodes are designed for use in ultra high speed switching applications. These devices are housed in the SC–59 package which is designed for low power surface mount applications.


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    M1MA151/2KT1 inch/3000 M1MA151/2KT3 inch/10 M1MA151KT1 M1MA152KT1 M1MA152KT1 Volta218A MSC1621T1 2N5458 BC237 PDF