kbpc5005
Abstract: GBU1506 RB104 GBPC808 RB101 bridge rectifier 2a wom rb106 W02 bridge KBU808 DF06S DATASHEET
Text: BRIDGE RECTIFER 整流桥 GLASS PASSIVATED CHIP BRIDGE RECTIFIER 玻璃钝化芯片整流桥 Voltage 50 100 200 400 600 800 1000 外形 0.5 MB01 MB02 MB03 MB04 MB05 MB06 MB07 MB-1 0.5 MB1S MB2S MB3S MB4S MB5S MB6S MB7S MB-S 1.0 DB101 DB102 DB103 DB104 DB105
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DB101
DB102
DB103
DB104
DB105
DB106
DB107
DB101S
DB102S
DB103S
kbpc5005
GBU1506
RB104
GBPC808
RB101
bridge rectifier 2a wom
rb106
W02 bridge
KBU808
DF06S DATASHEET
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PDF
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mb6s diode
Abstract: MB7S
Text: SEMICONDUCTOR MB1S THRU MB7S TECHNICAL SPECIFICATION SINGLE-PHASE GLASS PASSIVATED MINI SILICON SURFACE MOUNT BRIDGE RECTIFIER VOLTAGE RANGE 50 to 1000 Volts CURRENT 0.5 Ampere FEATURES Surage overload rating-30 amperes peak Ideal for printed circuit board
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Original
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rating-30
mb6s diode
MB7S
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PDF
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Untitled
Abstract: No abstract text available
Text: MB1S THRU MB7S o MINI SURFACE MOUNT GLASS PASSIVATED BRIDGE RECTIFIERS VOLTAGE RANGE 50 to 1000 Volts CURRENT 0.5 Ampere SMD/MB-S FEA TURES * Ideal for printed circuit board * Reliable low cost construction utilizing molded plastic technique * High surge current capability
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300us
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PDF
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L70b
Abstract: 7010K HYM5C9256
Text: H Y UN DA I E L E C T R O N I C S • SIE » j:y u h d a i SEMICONDUCTOR • Mb7SGÖfi DOODflil T37 M H Y N K HYM5C9256 256KX9-Bit CMOS DRAM MODULE M 4212 0 2 B -O C T 9 1 DESCRIPTION The HYM5C9256M is a 256K words by 9 bits dynamic RAM module and consists of nine
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OCR Scan
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HYM5C9256
256KX9-Bit
HYM5C9256M
HY53C256LF
HYM5C9256-70
HYM5C9256-80
HYM5C9256-10
HYM5C9256-12
HYM5C9256
L70b
7010K
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PDF
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CRL4
Abstract: s8100
Text: HYU N DA I E L E C T R O N I C S 3^E J> • Mb7SGflö G0003flfl 2 « H Y N K 1M X 8-Bit CMOS DRAM MODULI1?”. M431201B-APR91 DESCRIPTION FEATURES T c a - 2 . ?> tRAC tCAC tpc HYM581000-60 60 20 40 HYM S81000-70 70 20 40 H YM581000-80 80 20 45 HYM 581000-10
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OCR Scan
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G0003flfl
M431201B-APR91
HYM581000
HY531000J
HYM581000M
HYM581000P
HYM581000-60
S81000-70
YM581000-80
36l--
CRL4
s8100
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PDF
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bPA20
Abstract: No abstract text available
Text: •HYUNDAI H Y 5 1 V 1 7 1 0 0 A S e r ie s 16M x 1-bit CMOS DRAM PRELIMINARY DESCRIPTION The HY51V17100Ais the new generation and fast dynamic RAM organized 16,777,216 x 1-bit. The HY51V17100A utilizes Hyundai's CMOS silicon gate process technology as well as advanced circuit techniques to provide wide
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OCR Scan
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HY51V17100Ais
HY51V17100A
HY51V17100A
1AD22-00-MAY94
4b750flfl
HY51V17100AJ
HY51V17100ASLJ
HY51V17100AT
HY51V17100ASLT
bPA20
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PDF
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Untitled
Abstract: No abstract text available
Text: • { H Y U N D A HY62V256 Series I 32K X 8-bit CMOS SRAM DESCRIPTION The HV62V256 is a high-speed, low power and 32,768 x 8-bits CMOS static RAM fabricated using Hyundai’s high performance twin tub CMOS process technology. The HY62V256 has a data retention mode that guarantees
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OCR Scan
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HY62V256
HV62V256
55/70/85/100ns
100/120/150ns
1DC03-11-MAY95
HY62V256LP
HY62V256LJ
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PDF
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Untitled
Abstract: No abstract text available
Text: •HYUNDAI HYM532124A W-Series 1M x 32-bit CMOS DRAM MODULE with EXTENDED DATA OUT DESCRIPTION The HYM532124A is a 1M x 32-bit EDO mode CMOS DRAM module consisting of two HY5118164B in 42/42 pin S O J or 44/50 pin TSOPII on a 72 pin glass-epoxy printed circuit board. Two 0.01 nF decoupling capacitors are
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OCR Scan
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HYM532124A
32-bit
HY5118164B
HYM532124AW/ASLW
HYM532124AWG/ASLWG
HYM532124A
HYM532124AT
A0005
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PDF
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Untitled
Abstract: No abstract text available
Text: HYUNDAI HY5117410 Series SEMICONDUCTOR 4M X 4-bit CMOS DRAM with Write-Per-Bit DESCRIPTION The HY5117410 is the new generation and fast dynamic RAM organized 4,194,304 x 4-bit with function of Write-Per-Bit. The HY5117410 utilizes Hyundai’s CMOS silicon gate process technology as well as advanced
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OCR Scan
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HY5117410
1AD06-10-APR93
HY5117410JC
HY5117410UC
HY5117410TC
HY5117410LTC
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PDF
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Untitled
Abstract: No abstract text available
Text: •HYUNDAI SEMICONDUCTOR HY531000 Series 1Mx 1-bit CMOS DRAM DESCRIPTION The HY531000 is the new generation and fast dynamic RAM organized 1,048,576 x 1-bit. The HY531000 utilizes Hyundai’s CMOS silicon gate process technology as well as advanced circuit techniques to provide wide operating
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OCR Scan
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HY531000
300mil
1AB04-30-APR93
HY531000S
HY531000J
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PDF
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Untitled
Abstract: No abstract text available
Text: •HYUNDAI SEMICONDUCTOR HY5116400 Series 4M X 4-bit CMOS DRAM DESCRIPTION The HY5116400 is the new generation and fast dynamic RAM organized 4,194,304 x 4-bit. The HY5116400 utilizes Hyundai’s C M O S silicon gate process technology as well as advanced circuit techniques to provide wide operating
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OCR Scan
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HY5116400
1AD02-10-APR93
HY5116400JC
HY5116400LJC
HY5116400TC
HY5116400LTC
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PDF
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Untitled
Abstract: No abstract text available
Text: • HYUNDAI HYM532224A E-Series 2M x 32-bit CMOS DRAM MODULE with EXTENDED DATA OUT DESCRIPTION The HYM532224A is a 2M x 32-bit EDO m ode CMOS DRAM m odule consisting of four HY5117804B in 28/28 pin SOJ or TSOPII and an AND gate in 16 pin SOP on a 72 pin glass-epoxy printed circuit board. 0.22nF decoupling
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OCR Scan
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HYM532224A
32-bit
HY5117804B
HYM532224AE/ASLE/ATE/ASLTE
HYM532224AEG/ASLEG/ATEG/ASLTEG
171M1N
DD054M
1CE13-10-0EC94
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PDF
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Untitled
Abstract: No abstract text available
Text: H Y 5 1 V 4 4 0 3 B • • H Y U N D A I S e r ie s IM x 4-bit CMOS DRAM with4CAS PRELIMINARY DESCRIPTION The HY51V4403B is the new generation and fast dynamic RAM organized 1,048,576 x 4-bit. The HY51V4403B has four CASs CAS0-3 which control corresponding data I/O port in conjunction with OE(eg. CASO controls DQO,
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OCR Scan
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HY51V4403B
050f1
1AC1S-00-MAY94
HY51V4403BJ
HY51V4403BU
HYS1V4403BSU
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PDF
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Untitled
Abstract: No abstract text available
Text: HY5117400A Series ••HYUNDAI 4M x 4-bit CMOS DRAM DESCRIPTION me HY5117400A is the new generation and fast dynamic RAM organized 4,194,304 x 4-bit. "Hie HY5117400A utilizes Hyundai's CMOS silicon gate process technology as well as advanced circuit techniques to provide wide
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OCR Scan
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HY5117400A
HY5117400A
1AD27-10-MAY94
HY5117400AJ
HY5117400ASLJ
HY5117400AT
HY5117400ASLT
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HYM536100M
Abstract: No abstract text available
Text: 'HYUNDAI SEMICONDUCTOR HYM536100 Series 1M x 36-bit CMOS DRAM MODULE DESCRIPTION The HYM536100 Is a 1M x 36-bit Fast page mode CMOS ORAM module consisting of eight HY514400 and four HY531000 in 20/26 pin SOJ on a 72 pin glass-epoxy printed circuit board. 0.22fiF decoupling capacitor is mounted
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OCR Scan
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HYM536100
36-bit
HY514400
HY531000
22fiF
HYM536100M
HYM536100MG
1CC02-10-MAY93
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PDF
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Untitled
Abstract: No abstract text available
Text: HYUNDAI HY62256B-I Series _ 32Kx 8-bit CMOS SRAM PRELIMINARY DESCRIPTION The HY62256B-I is a high-speed, low power and 32,768 x 8-bits CMOS static RAM fabricated using Hyundai’s high performance twin tub CMOS process technology. This high reliability process coupled with innovative circuit
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OCR Scan
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HY62256B-I
1DC05-11-MAY94
HY62256BLP-I
HY62256BLLP-I
HY62256BU-I
HY62256BLU-I
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PDF
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G530T
Abstract: No abstract text available
Text: •HYUNDAI H Y 6 7 1 6 1 1 0 / 1 Ì 1 64K X 16 Bit SYNCHRONOUS CMOS SRAM PRELIMINARY DESCRIPTION This device integrates high-speed 64Kx16 SRAM core, address registers, data input registers, a 2-bit burst address counter and Non-pipelined output. All synchronous inputs pass through registers controlled by a
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OCR Scan
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64Kx16
486/Pentium
15ns/20ns/25ns
67MHz
Mb75Qflfl
GG0b313
10H07-11-MAY95
HY6716110/111
4b750flfl
1DH07-11-MAY95
G530T
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PDF
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Untitled
Abstract: No abstract text available
Text: H Y 6 2 8 1 0 0 A -I •HYUNDAI S e r ie s 128KX 8-bit CMOS SRAM PRELIMINARY DESCRIPTION The HY628100A-I is a high-speed, low power and 131,072 x 8-bits CMOS static RAM fabricated using Hyundai’s high performance twin tub CMOS process technology. This high reliability process coupled with innovative circuit
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OCR Scan
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128KX
HY628100A-I
1DD03-11-MAY94
0Q037hD
HY628100ALP-I
HY628100ALLP-I
HY628100ALG-I
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PDF
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Untitled
Abstract: No abstract text available
Text: H Y 5 1 1 6 1 O O A •HYUNDAI S e r ie s 16Mx 1-bit CMOS DRAM DESCRIPTION The HY51161 OOA is the new generation and fast dynamic RAM organized 16,777,216 x 1-bit. The HY51161 OOA utilizes Hyundai's CMOS silicon gate process technology as well as advanced circuit techniques to provide wide
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OCR Scan
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HY51161
HY5116100Ato
9-10-MAY94
HY5116100A
HY5116100AJ
HY5116100ASU
HY5116100AT
HY51161OOASLT
HY5116100AR
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PDF
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Untitled
Abstract: No abstract text available
Text: HYM581610 M -Series HYUNDAI 16M x8-bit CMOS DRAM MODULE DESCRIPTION The HYM581610 is a 16M x 8-bit Fast page mode CMOS DRAM module consisting of eight HY5117100 in 24/28 pin SOJ or TSOP-il on a 30 pin glass-epoxy printed circuit board. 0.22//F decoupling capacitor is mounted for
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OCR Scan
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HYM581610
HY5117100
22//F
HYM581610M/LM/TM/LTM
350fB
891MAX.
08ffi
HYM581610TM/LTM
361MAX.
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PDF
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Untitled
Abstract: No abstract text available
Text: • • H Y U N D A I H Y 5 1 1 7 8 1 0 S e r ie s 2 M x 8-bit CMOS DRAM with WPB DESCRIPTION The HY5117810 is the new generation and fast dynamic RAM organized 2,097,152 x 8-bit. The HY5117810 utilizes Hyundai’s CMOS silicon gate process technology as well as advanced circuit techniques to provide wide
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OCR Scan
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HY5117810
HY5117810
1AD10-10-MAY94
HY5117810JC
HY5117810SLJC
HY5117810TC
HY5117810SLTC
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PDF
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Untitled
Abstract: No abstract text available
Text: HY638100AS/HY6381OOAL HYUNDAI 128 X 8 Bit FAST SRAM PRELIMINARY DESCRIPTION The HY638100 is a 1,048,576 -bit high-speed Static Random Access Memory organized as 131,072 words by 8 bits. The HY638100 uses eight common input and output liness and has an output enable pin which operates
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OCR Scan
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HY638100AS/HY6381OOAL
HY638100
15/17/20/25ns
HY638100AS
150mA
HY638100AL
150all
1DG02-22-MAY95
HY638100A
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PDF
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Untitled
Abstract: No abstract text available
Text: •HYUNDAI HYM532100A Series SEMICONDUCTOR 1M x 32-bit CMOS DRAM MODULE PRELIMINARY DESCRIPTION The HYM532100A is a 1M x 32-bit Fast page mode CMOS DRAM module consisting of eight HY514400A in 20/26 pin SOJ on a 72 pin glass-epoxy printed circuit board. 0.22/iF decoupling capacitor Is mounted for each DRAM.
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OCR Scan
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HYM532100A
32-bit
HY514400A
22/iF
HYM5321OOAM/ALM
HYM532100AMG/ALMG
1CC03-00-M
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PDF
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Untitled
Abstract: No abstract text available
Text: » « H Y U N D A I e r ie s 1M x 4H_bŸjt 5C1M40 S4 0D R3 ABM Sw ,th 4C A S PRELIMINARY DESCRIPTION The HY514403B is the new generation and fast dynamic RAM organized 1,048,576 x 4-bit. The HY514403B has four CASs CAS0-3 which control corresponding data I/O port in conjunction with OE(eg. CSSO controls DQO,
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OCR Scan
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5C1M40
HY514403B
1AC15-00-MAY94
4b750fi6
HY514403BJ
HY514403BU
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PDF
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