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    MBR20020CT Search Results

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    MBR20020CT Price and Stock

    GeneSic Semiconductor Inc MBR20020CT

    DIODE MOD SCHOTT 20V 200A 2TOWER
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    DigiKey MBR20020CT Bulk 80
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    NAC MBR20020CT 25
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    GeneSic Semiconductor Inc MBR20020CTR

    DIODE MOD SCHOTT 20V 200A 2TOWER
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    DigiKey MBR20020CTR Bulk 80
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    NAC MBR20020CTR 25
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    Navitas Semiconductor MBR20020CT

    Diode Modules SI PWR SCHOTTKY 2TWR 20-100V 200A 20P/14
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    Mouser Electronics MBR20020CT
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    Onlinecomponents.com MBR20020CT
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    Navitas Semiconductor MBR20020CTR

    Diode Modules SI PWR SCHOTTKY 2TWR 20-100V 200A 20P/14
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics MBR20020CTR
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    MBR20020CT Datasheets (11)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    MBR20020CT America Semiconductor HIGH POWER-SCHOTTKY RECTIFIERS; IF::200A; case_package::Twin Tower Modules Original PDF
    MBR20020CT GeneSiC Semiconductor Diodes, Rectifiers - Modules, Discrete Semiconductor Products, DIODE SCHOTTKY 20V 200A 2TOWER Original PDF
    MBR20020CT Micro Commercial Components 200 Amp Rectifier 20 to 100 Volts Schottky Barrier Original PDF
    MBR20020CT Micro Commercial Components 200 Amp Schottky Barrier Rectifier 20 Volts Original PDF
    MBR20020CT Transys Electronics SCHOTTKY DIODES MODULE TYPE 200A Original PDF
    MBR20020CT America Semiconductor MBR20020 - HIGH POWER-SCHOTTKY RECTIFIERS; IF::200A; case_package::Twin Tower Modules Scan PDF
    MBR20020CTL Motorola European Master Selection Guide 1986 Scan PDF
    MBR20020CTL Motorola Switchmode Datasheet Scan PDF
    MBR20020CTR America Semiconductor HIGH POWER-SCHOTTKY RECTIFIERS; IF::200A; case_package::Twin Tower Modules Original PDF
    MBR20020CTR GeneSiC Semiconductor Diodes, Rectifiers - Modules, Discrete Semiconductor Products, DIODE SCHOTTKY 20V 200A 2TOWER Original PDF
    MBR20020CTR America Semiconductor MBR20020 - HIGH POWER-SCHOTTKY RECTIFIERS; IF::200A; case_package::Twin Tower Modules Scan PDF

    MBR20020CT Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: MBR20020CT thru MBR20040CTR Silicon Power Schottky Diode VRRM = 20 V - 100 V IF = 200 A Features • High Surge Capability • Types up to 100 V VRRM Twin Tower Package Maximum ratings, at Tj = 25 °C, unless otherwise specified "R" devices have leads reversed


    Original     		MBR20020CT MBR20040CTR MBR20020CT MBR20030CT MBR20035CT MBR20040CT PDF

    Untitled

    Abstract: No abstract text available
    Text: MBR20020CT thru MBR20040CTR Silicon Power Schottky Diode VRRM = 20 V - 40 V IF AV = 200 A Features • High Surge Capability • Types from 20 to 40 V VRRM Twin Tower Package • Not ESD Sensitive Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed)


    Original     		MBR20020CT MBR20040CTR MBR20030CT MBR20035CT MBR20040CT PDF

    MBR20045CT

    Abstract: MBR200100CT MBR20020CT MBR20030CT MBR20035CT MBR20040CT MBR20060CT MBR20080CT
    Text: DACO SEMICONDUCTOR CO., LTD. MBR20020CT A THRU MBR200100CT(A) SCHOTTKY DIODES MODULE TYPE 200A Features High Surge Capability 200Amp Rectifier 20-100 Volts Types Up to 100V VRRM TWIN TOWER A R Maximum Ratings Operating Temperature: -40 C to +175 Storage Temperature: -40 C to +175


    Original     		MBR20020CT MBR200100CT 200Amp MBR20040CT MBR20045CT MBR20080CT MBR20060CT MBR20035CT MBR20030CT PDF

    bys75-50

    Abstract: MBR20030CTL mbr6535 357B-01 MBR6545 BYS75-45 MBR20020CTL BYS75-30 MBR12035CT MBR20035CT
    Text: SCHOTTKY RECTIFIERS continued l0, AVERAGE FORWARD RECTIFIED CURRENT (A) 80 75 65 120 ^ J ' MBR20020CTL* 20 30 35 # Power Tap * D 05 VRR M »00 357B-01 Plastic 257-01 C A SE 200 MBR20030CTL* BYS75-30* MBR6535 MBR7535 MBR8035 MBR12035CT MBR20035CT MBR30035CT


    OCR Scan     		357B-01 MBR20020CTL* BYS75-30* MBR20030CTL* MBR6535 MBR7535 MBR8035 MBR12035CT MBR20035CT MBR30035CT bys75-50 MBR20030CTL mbr6535 MBR6545 BYS75-45 MBR20020CTL BYS75-30 PDF

    MBR200100CT

    Abstract: MBR20020CT MBR20030CT MBR20035CT MBR20040CT MBR20045CT MBR20060CT MBR20080CT
    Text: Transys MBR20020CT A THRU MBR200100CT(A) Electronics L I M I T E D SCHOTTKY DIODES MODULE TYPE 200A Features High Surge Capability 200Amp Rectifier 20-100 Volts Types Up to 100V VRRM TWIN TOWER A R Maximum Ratings Operating Temperature: -40 C to +175 Storage Temperature: -40 C to +175


    Original     		MBR20020CT MBR200100CT 200Amp MBR20035CT MBR20030CT MBR20040CT MBR20045CT MBR20060CT MBR20080CT PDF

    MBR60035CTL

    Abstract: MBR20030CTL MBR20025CTL MBR30050CT MBR20015CTL
    Text: M O T O R O L A SC D I O D E S / O P T O 3TE D B b 3 b ? 2 5 5 GGfl30D4 M • M 0 T 7 T ^ 3 -cl *Iq , A V ERA G E RECTIFIED FO RW ARD C U R REN T (Amperes) 200 300 600 3570-01 PO W ER TAP O-W-i 0+H° V r RM (Volts) 15 MBR20015CTL 20 MBR20020CTL 25 MBR20025CTL


    OCR Scan     		GGfl30D4 MBR20015CTL MBR20020CTL MBR20025CTL MBR20030CTL MBR30035CT MBR60030CTL MBR60035CTL MBR30045CT MBR30050CT PDF

    Untitled

    Abstract: No abstract text available
    Text: MBR20020CT thru MBR20040CTR Silicon Power Schottky Diode VRRM = 20 V - 100 V IF = 200 A Features • High Surge Capability • Types up to 100 V VRRM Twin Tower Package Maximum ratings, at Tj = 25 °C, unless otherwise specified "R" devices have leads reversed


    Original     		MBR20020CT MBR20040CTR MBR20020CT MBR20030CT MBR20035CT MBR20040CT 175se PDF

    200100CT

    Abstract: MBR20080CT-200100CT MBR20020CT-20045CT 20020-20045CT 20045CT
    Text: MCC MBR20020CT   omponents 21201 Itasca Street Chatsworth    !"# $ %    !"# THRU MBR200100CT Features • • • • 200 Amp Schottky Barrier Rectifier 20 to 100 Volts Metal of siliconrectifier, majonty carrier conducton


    Original     		MBR20020CT MBR200100CT MBR20030CT MBR20035CT MBR20040CT MBR20045CT MBR20060CT MBR20080CT 200100CT MBR20080CT-200100CT MBR20020CT-20045CT 20020-20045CT 20045CT PDF

    MBR20020CT

    Abstract: MBR20030CT MBR20035CT MBR20040CT
    Text: MBR20020CT thru MBR20040CTR Silicon Power Schottky Diode VRRM = 20 V - 100 V IF = 200 A Features • High Surge Capability • Types up to 100 V VRRM Twin Tower Package Maximum ratings, at Tj = 25 °C, unless otherwise specified "R" devices have leads reversed


    Original     		MBR20020CT MBR20040CTR MBR20020CT MBR20030CT MBR20035CT MBR20040CT MBR20030CT MBR20035CT MBR20040CT PDF

    MBR20030CTL

    Abstract: MBR20025CTL R20025C
    Text: MOTOROLA SC DIODES/OPTO b3fci72SS □0flb3Lci DSb b4E D MOTOROLA SEMICONDUCTOR TECHNICAL DATA MBR20015CTL MBR20020CTL MBR20025CTL MBR20030CTL POWERTAP SWITCHMODE Power R ectifiers . . using the S chottky B arrier prin ciple w ith a platin um barrier metal. These stateof-the-art devices have the fo llo w in g features:


    OCR Scan     		b3fci72SS MBR20015CTL MBR20020CTL MBR20025CTL MBR20030CTL MBR20030CTL MBR20025CTL, R20025C PDF

    MBR200100CT

    Abstract: MBR20020CT MBR20030CT MBR20035CT MBR20040CT MBR20045CT MBR20060CT MBR20080CT
    Text: MCC MBR20020CT THRU MBR200100CT Micro Commercial Corp. 21201 Itasca St. Chatsworth, CA 91311 Phone: 818 701-4933 Fax: (818) 701-4939 Features • • • • 200 Amp Schottky Barrier Rectifier 20 to 100 Volts Metal of siliconrectifier, majonty carrier conducton


    Original     		MBR20020CT MBR200100CT MBR20030CT MBR20035CT MBR20040CT MBR20045CT MBR20060CT MBR20080CT MBR200100CT MBR20020CT MBR20030CT MBR20035CT MBR20040CT MBR20045CT MBR20060CT MBR20080CT PDF

    MBR20020CT

    Abstract: No abstract text available
    Text: Naina Semiconductor Ltd. MBR20020CT thru MBR20040CTR Silicon Schottky Diode, 200A Features • • • • Guard Ring Protection Low forward voltage drop High surge current capability Up to 100V VRRM TWIN TOWER PACKAGE Maximum Ratings TJ = 25oC unless otherwise specified


    Original     		MBR20020CT MBR20040CTR MBR20020CT MBR20030CT MBR20035CT MBR20040CT PDF

    MBR20030CTL

    Abstract: MBR20050CT MBR30050CT MBR30045CT MBR20015CTL 200CNQ030 244N MBR1605 SPD115417A fst30045
    Text: tSENSITRON SEMICONDUCTOR TECHNICAL DATA DATA SHEET 890, REV. A Plastic Schottky Rectifier Product Catalog New Package! TO-247 Featuring: High Current/Leaded and Surface Mount Package Types SENSITRON SEMICONDUCTOR PLASTIC SCHOTTKY RECTIFIERS Contents Introduction . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .3


    Original     		O-247 NQ045 403CNQ080 403CNQ100 60CNQ045SL 61CNQ045SL 62CNQ030SL 63CNQ100SL 69CNQ135SL 69CNQ150SL MBR20030CTL MBR20050CT MBR30050CT MBR30045CT MBR20015CTL 200CNQ030 244N MBR1605 SPD115417A fst30045 PDF

    triac zd 607

    Abstract: 1n5204 CA2820 TRW 2N4427 equivalent bfr91 2N6823 842 317 SO8 BD243 PINOUT BD529 bf506 BF845
    Text: MASTER SELECTION GUIDE EUROPEAN SUPPLEMENT This is the European supplement to the USA edition of the Master Selection Guide, SG73/D REV 3. It should be read along with the USA edition. The supplement carries amendments to sections 1 and 5 in the USA edition.


    OCR Scan     		SG73/D triac zd 607 1n5204 CA2820 TRW 2N4427 equivalent bfr91 2N6823 842 317 SO8 BD243 PINOUT BD529 bf506 BF845 PDF

    1n5822 trr

    Abstract: A14F diode FR105 diode MR850 diode A14A BYV27 200 TAP LT2A02 MBR3100 0630 1N4007 sod-123 SES50
    Text: MBRD1035CTL SWITCHMODE Schottky Power Rectifier DPAK Power Surface Mount Package . . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay


    Original     		MBRD1035CTL VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 1n5822 trr A14F diode FR105 diode MR850 diode A14A BYV27 200 TAP LT2A02 MBR3100 0630 1N4007 sod-123 SES50 PDF

    OZ 9983

    Abstract: mbr3045pt transistor 940 629 MOTOROLA 220 Motorola marking code K 652 TO-220 MUR3030 TRANSISTOR BC 456 Diode Marking 1N4007 Motorola 1N2069 A14F diode BYV33-45
    Text: MBRB3030CTL Advance Information SWITCHMODE Power Rectifier . . . using the Schottky Barrier principle with a proprietary barrier metal. These state–of–the–art devices have the following features: http://onsemi.com Features: • Dual Diode Construction —


    Original     		MBRB3030CTL VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 OZ 9983 mbr3045pt transistor 940 629 MOTOROLA 220 Motorola marking code K 652 TO-220 MUR3030 TRANSISTOR BC 456 Diode Marking 1N4007 Motorola 1N2069 A14F diode BYV33-45 PDF

    Diode 1N4007 DO-7 Rectifier Diode

    Abstract: FE8D marking BCV BA157* diode MUR160 SMa diode rgp10g MBRD360 cathode top 1n5619 1N2069 mur120 equivalent diode
    Text: MBRM120ET3 Surface Mount Schottky Power Rectifier POWERMITE Power Surface Mount Package The Schottky Powermite employs the Schottky Barrier principle with a barrier metal and epitaxial construction that produces optimal forward voltage drop–reverse current tradeoff. The advanced


    Original     		MBRM120ET3 VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 Diode 1N4007 DO-7 Rectifier Diode FE8D marking BCV BA157* diode MUR160 SMa diode rgp10g MBRD360 cathode top 1n5619 1N2069 mur120 equivalent diode PDF

    MLED96

    Abstract: BRX49 SCR MRF549 ATV5030 MRF660 MRF548 mmbr2857lt1 CR2428 MPF3822 MRF548 MOTOROLA
    Text: ALPHANUMERIC INDEX DEVICE ATV5030 ATV5090B ATV6031 ATV6060H ATV7050 BAL99LT1 BAS16LT1 BAS21LT1 BAV70LT1 BAV74LT1 BAV99LT1 BAW56LT1 BC107,A,B BC109C BC177B BC182 BC212 BC237B BC239 BC307B BC327 BC328 BC337 BC338 BC368 BC369 BC373 BC489 BC490 BC517 BC546,A,B


    Original     		ATV5030 ATV5090B ATV6031 ATV6060H ATV7050 BAL99LT1 BAS16LT1 BAS21LT1 BAV70LT1 BAV74LT1 MLED96 BRX49 SCR MRF549 ATV5030 MRF660 MRF548 mmbr2857lt1 CR2428 MPF3822 MRF548 MOTOROLA PDF

    20N15

    Abstract: 35n05 mje13002 to92 ur3060 AN803 motorola 2N6823 isolated dc-dc mc34063 mje12007 Motorola Switchmode 1 special
    Text: C O N TE N TS Page What Everyone Should Know About Switching Power Supplies In tro du ctio n. Comparison w ith Linear Regulations.


    OCR Scan     		PDF

    MBR20020CT(R)

    Abstract: Twin Tower 200100CT
    Text: MBR 20020C T R DACO SEMICONDUCTOR CO., LTD. MBR 200100CT(R) T HRU SCHOTTKY DIODE MODULE TYPES 200A Features 200Amp Rectifier 20-100 Volts High Surge Capability Types Up to 100V VRRM Twin Tower Maximum Ratings A R Operating Temperature: -55 C to+150 Sto rage Temperatur: -55 C to +150


    Original     		20020C 200100CT 200Amp MBR20020CT MBR20030CT MBR20035CT MBR20045CT MBR20060CT MBR20040CT MBR20080CT MBR20020CT(R) Twin Tower PDF

    MBR140P

    Abstract: 1N5819 SS14 1N5822 SS34 mbr370 MBR170 1N5822 ss24 motorola SB5100 CROSS REFERENCE LIST MBR30050CT MBR180
    Text: Schottky Cross Reference List FAIRCHILD SEMI 1N5818 1N5819 1N5822 BAT54 BAT54A BAT54C BAT54S FMKA140 FMKA140 FYP1504DN FYP2004DN FYP2006DN MBR1035 MBR1045 MBR1535CT MBR1545CT MBR1635 MBR1645 MBR2035CT MBR2045CT MBR2060CT MBR2535CT MBR2545CT MBR3035PT MBR3045PT


    Original     		1N5818 1N5819 1N5822 BAT54 BAT54A BAT54C BAT54S FMKA140 FYP1504DN MBR140P 1N5819 SS14 1N5822 SS34 mbr370 MBR170 1N5822 ss24 motorola SB5100 CROSS REFERENCE LIST MBR30050CT MBR180 PDF

    stpr16

    Abstract: MUR480E 340L-02 PK MUR 460 BV 202 0158 1N541 AK SOT23 STPS2045 SS33 SMB A14F diode
    Text: MURB1620CT Preferred Device SWITCHMODE Power Rectifier D2PAK Power Surface Mount Package Designed for use in switching power supplies, inverters and as free wheeling diodes, these state–of–the–art devices have the following features: • • • •


    Original     		MURB1620CT VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 stpr16 MUR480E 340L-02 PK MUR 460 BV 202 0158 1N541 AK SOT23 STPS2045 SS33 SMB A14F diode PDF

    b2545 transistor

    Abstract: TO220 MUR460 BYV43-45 MUR 460 0801 MR756RL MUR420 diode b2535 equivalent transistor B2535 6A10 BL diode diode A14A surface
    Text: MBR2535CT, MBR2545CT MBR2545CT is a Preferred Device SWITCHMODE Power Rectifiers . . . using the Schottky Barrier principle with a platinum barrier metal. These state–of–the–art devices have the following features: • Guardring for Stress Protection


    Original     		MBR2535CT, MBR2545CT MBR2545CT B2535, B2545 VHE205 VHE210 VHE215 VHE220 VHE2401 b2545 transistor TO220 MUR460 BYV43-45 MUR 460 0801 MR756RL MUR420 diode b2535 equivalent transistor B2535 6A10 BL diode diode A14A surface PDF

    MR2835S equivalent

    Abstract: A14F diode 1n5404 diode FE16A MUR860 equivalent MUR1620CT MUR420 diode usd745c equivalent MBRD360 PR1502
    Text: MBR6045PT SWITCHMODE Power Rectifier The SWITCHMODE power rectifier employs the use of the Schottky Barrier principle with a Platinum barrier metal. This state-of-the-art device has the following features: http://onsemi.com • Dual Diode Construction — Terminals 1 and 3 May Be Connected


    Original     		MBR6045PT VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 MR2835S equivalent A14F diode 1n5404 diode FE16A MUR860 equivalent MUR1620CT MUR420 diode usd745c equivalent MBRD360 PR1502 PDF