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    ROHM Semiconductor MCH185A2R2CK

    CAP CER 2.2PF 50V C0G/NP0 0603
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    DigiKey MCH185A2R2CK Reel 4,000
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    Bristol Electronics MCH185A2R2CK 52,000
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    Quest Components MCH185A2R2CK 41,600
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    MCH185A2R2CK 11,728
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    MCH185A2R2C Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    MCH185A2R2CK ROHM Ceramic Capacitors, Capacitors, CAP CER 2.2PF 50V NP0 0603 Original PDF

    MCH185A2R2C Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    MCH185A221JK

    Abstract: MCH185A390JK ML200C SGA-8543Z PSF-S01 AN079 SOT343 C5 Getek Sirenza AN-21
    Text: Design Application Note - AN-079 SGA-8543Z Amplifier Application Circuits Design Considerations and Trade-offs -Biasing Techniques Abstract Sirenza Microdevices’ SGA-8543Z is a high performance SiGe amplifier designed for operation from 50 MHz to 3.5 GHz. This application note illustrates application circuits


    Original     		AN-079 SGA-8543Z dev2450 2440MHz EAN-104851 MCH185A221JK MCH185A390JK ML200C PSF-S01 AN079 SOT343 C5 Getek Sirenza AN-21 PDF

    MCH185C332K

    Abstract: MCH155F103Z mch184cn224k MCH153F104Z
    Text: Multi Layer Ceramic Chip Capacitors MCH15 Series 1005(0402 Size), MCH18 Series (1608(0603) Size) Barrier layer and end terminations to improve solderability. These capacitors are suitable for flow and reflow soldering and can be used in various applications.


    Original     		MCH15 MCH18 MCH185C332K MCH155F103Z mch184cn224k MCH153F104Z PDF

    MCR03J102

    Abstract: MCR03*J102 MCH185A150J MCR03*J102 resistor SGA-8343 CL10B104KONC sga8343 samsung bluetooth sige an-061 sga8343z
    Text: AN RFMD APPLICATION NOTE SGA-8343 GPS Application Circuits RFMD Worldwide Applications Design Application Note - AN-061 Abstract RFMD’s SGA-8343 is a high performance SiGe amplifier designed for operation from DC to 6GHz. This application note illustrates application circuits for GPS Global Positioning System frequency band (1575MHz). The first application circuit is optimized for noise performance; the second one is optimized for input return loss. Introduction The application circuits were


    Original     		SGA-8343 AN-061 1575MHz) MCR03J102 MCR03*J102 MCH185A150J MCR03*J102 resistor CL10B104KONC sga8343 samsung bluetooth sige an-061 sga8343z PDF

    MCH315A180J

    Abstract: MCH215A221J MCH315A100D MCH185A220J MCH215A680J MCH155A270J MCH215A220J MCH185A100D MCH185A2R2C MCH215A471J
    Text: 1/2 C L A S S I C 0 G M U LT I L AY E R C E R A M I C C A PA C I T O R S MCH SERIES • CLASS I, TEMPERATURE COMPENSATED: C0G • CLASS II, HIGH DIELECTRIC CONSTANT: X7R & Y5V. Z5U ALSO AVAILABLE MCH SERIES SPECIFICATIONS Parameter Temperature range Temp. coefficients


    Original     		30ppm/ with61J 560pF MCH315A681J 680pF MCH315A821J 820pF MCH315A102J MCH315A122J MCH315A152J MCH315A180J MCH215A221J MCH315A100D MCH185A220J MCH215A680J MCH155A270J MCH215A220J MCH185A100D MCH185A2R2C MCH215A471J PDF

    mch185cn153k

    Abstract: MCH184FN105Z MCH185A101J MCH155A221J MCH155F103Z MCH18 MCH185A150J MCH153F104Z MCH185A470J f103z
    Text: Multi Layer Ceramic Chip Capacitors MCH15 Series 1005(0402 Size), MCH18 Series (1608(0603) Size) Barrier layer and end terminations to improve solderability. These capacitors are suitable for flow and reflow soldering and can be used in various applications.


    Original     		MCH15 MCH18 12please 4316B mch185cn153k MCH184FN105Z MCH185A101J MCH155A221J MCH155F103Z MCH185A150J MCH153F104Z MCH185A470J f103z PDF

    130-082

    Abstract: Transistor LM 7812 NEC 7812 34018 2052-1215 NEc hemt CS 5609 NE34018 equivalent transistor NEC 7812 IC LM 7812
    Text: California Eastern Laboratories AN1022 APPLICATION NOTE Designing Low Noise Amplifiers for PCS Application ABSTRACT DEVICE CHOICE AND CHARACTERISTIC This application note will review the process by which microwave amplifier designers choose their designs based


    Original     		AN1022 130-082 Transistor LM 7812 NEC 7812 34018 2052-1215 NEc hemt CS 5609 NE34018 equivalent transistor NEC 7812 IC LM 7812 PDF

    SGA8343Z

    Abstract: MCR03*J102 SGA8343ZSR SGA-8343Z EVB1 1608-FS3N9S lot code RFMD MCH185A150J MCR03J5R1 toko 10k series
    Text: SGA8343Z SGA8343ZLow Noise, High Gain SiGe HBT LOW NOISE, HIGH GAIN SiGe HBT Package: SOT-343 Product Description Features RFMD’s SGA8343Z is a high performance Silicon Germanium Heterostructure Bipolar Transistor SiGe HBT designed for operation from DC to


    Original     		SGA8343Z SGA8343ZLow OT-343 SGA8343Z DS100909 SGA8343Z-EVB4 1575MHz MCR03*J102 SGA8343ZSR SGA-8343Z EVB1 1608-FS3N9S lot code RFMD MCH185A150J MCR03J5R1 toko 10k series PDF

    Untitled

    Abstract: No abstract text available
    Text: SGA8343Z SGA8343ZLow Noise, High Gain SiGe HBT LOW NOISE, HIGH GAIN SiGe HBT Package: SOT-343 Product Description Features RFMD’s SGA8343Z is a high performance Silicon Germanium Heterostructure Bipolar Transistor SiGe HBT designed for operation from DC to


    Original     		SGA8343Z SGA8343ZLow OT-343 SGA8343Z DS110620 SGA8343Z-EVB4 1575MHz PDF

    CL10B104KONC

    Abstract: LL1608-FS18NJ MCR03*J102 SGA-8343 MCH185A100D MCR03*J102 resistor sige an-061 GETEK Z6 82 5.1 amplifier circuits
    Text: Design Application Note - AN-044 SGA-8343 Amplifier Application Circuits Abstract Sirenza Microdevices’ SGA-8343 is a high performance SiGe amplifier designed for operation from DC to 6 GHz. This application note illustrates several application circuits for key frequency bands in the


    Original     		AN-044 SGA-8343 EAN-101847 CL10B104KONC LL1608-FS18NJ MCR03*J102 MCH185A100D MCR03*J102 resistor sige an-061 GETEK Z6 82 5.1 amplifier circuits PDF

    MCH185C122KK

    Abstract: SGA-9089Z AN080 SGA-9089 MCH185A390JK MCH185A4R7CK ML200C 101216 LL1608-FS4N7S MCH185A5R6CK
    Text: Design Application Note - AN-080 SGA-9089Z Amplifier Application Circuits Design Considerations and Trade-offs -Biasing Techniques Abstract Sirenza Microdevices’ SGA-9089Z is a high performance SiGe amplifier designed for operation from 50 MHz to 3.0 GHz. This application note illustrates application circuits


    Original     		AN-080 SGA-9089Z 2440MHz EAN-105081 MCH185C122KK AN080 SGA-9089 MCH185A390JK MCH185A4R7CK ML200C 101216 LL1608-FS4N7S MCH185A5R6CK PDF

    CL10B104KONC

    Abstract: AN022 MCH185A220JK la 4440 amplifier circuit diagram 300 watt MCH185A390JK MCH185A100DK MCH185A4R7CK SGA-9289 Sirenza amplifier SOT-89 MCR03J200
    Text: Design Application Note - AN022 SGA-9289 Amplifier Application Circuits Abstract Sirenza Microdevices’ SGA-9289 is a high performance SiGe amplifier designed for operation from DC to 3500 MHz. This application note illustrates several application circuits for key frequency bands in the


    Original     		AN022 SGA-9289 EAN-101535 CL10B104KONC AN022 MCH185A220JK la 4440 amplifier circuit diagram 300 watt MCH185A390JK MCH185A100DK MCH185A4R7CK Sirenza amplifier SOT-89 MCR03J200 PDF

    55117 inductor

    Abstract: eic 4191 cdi schematics pcb ACPR2 169901 1 micro farad capacitor cdi schematic cdi schematics 78364 104914
    Text: PRELIMINARY DATA SHEET ECG013 BROADBAND HIGH OIP3 AMPLIFIER DC - 2500 MHz Features Applications „ „ 500 to 2500 MHz 45 dBm Typical OIP3 at 1960 MHz Highly Reliable InGaP HBT 15.0 dB Typical Gain at 1900 MHz 25.5 dBm Typical P1dB at 1960 MHz Excellent Stability


    Original     		ECG013 ECG013 SS-000044-000 55117 inductor eic 4191 cdi schematics pcb ACPR2 169901 1 micro farad capacitor cdi schematic cdi schematics 78364 104914 PDF

    ROHM capacitor 100nf 50v 0603 x7r

    Abstract: 80pf philips Trimmer capacitors MCH185C103KK application notes sa602 DFC2R SA620 0805CG569C9BB0 DFC2R881 SA601 SMV 142
    Text: INTEGRATED CIRCUITS AN1777 Low voltage front-end circuits: SA601, SA620 M. B. Judson Philips Semiconductors 1997 Aug 20 Philips Semiconductors Application note Low voltage front-end circuits: SA601, SA620 AN1777 Author: M. B. Judson CONTENTS I. Introduction . . . . . . . . . . . . . . . . . . . . . . . . .


    Original     		AN1777 SA601, SA620 SA601 SA620 ROHM capacitor 100nf 50v 0603 x7r 80pf philips Trimmer capacitors MCH185C103KK application notes sa602 DFC2R 0805CG569C9BB0 DFC2R881 SMV 142 PDF

    MCH185A050c

    Abstract: MCH155A240J MCH185A101J MCH185CN153 MCH155A121J MCH155C471K MCH185A220J MCH185C472K MCH155A100D MCH185A330J
    Text: 積層セラミックチップコンデンサ／Multi Layer Ceramic Chip Capacitors MCH15 Series（1005 Size）MCH18 Series（1608 Size） はんだ喰われ防止に、効果的なバリア層に優れた はんだ付け性のコーティング処理を施した電極構造を採用。


    Original     		MCH15 MCH18 MCH15 1005size MCH18 1608size 110pF 4316D MCH185A050c MCH155A240J MCH185A101J MCH185CN153 MCH155A121J MCH155C471K MCH185A220J MCH185C472K MCH155A100D MCH185A330J PDF

    MCR03*J102

    Abstract: CL10B104KONC MCR03*J102 resistor sige an-061 LL1608-FS39NJ SGA-8343 MCH185A2R2C AN-044
    Text: Design Application Note - AN-061 SGA-8343 GPS Application Circuits Abstract Sirenza Microdevices’ SGA-8343 is a high performance SiGe amplifier designed for operation from DC to 6 GHz. This application note illustrates application circuits for GPS Global Positioning System frequency band (1575 MHz). The first application circuit


    Original     		AN-061 SGA-8343 EAN-103201 MCR03*J102 CL10B104KONC MCR03*J102 resistor sige an-061 LL1608-FS39NJ MCH185A2R2C AN-044 PDF

    SGA-8343Z

    Abstract: samsung cl SGA8343Z SOT343 lna MICROWAVE DEVICES GaAs pHEMT LOW SOT-343
    Text: SGA8343Z SGA8343ZLow Noise, High Gain SiGe HBT LOW NOISE, HIGH GAIN SiGe HBT Package: SOT-343 Product Description Features RFMD’s SGA8343Z is a high performance Silicon Germanium Heterostructure Bipolar Transistor SiGe HBT designed for operation from DC to


    Original     		SGA8343ZLow SGA8343Z OT-343 SGA8343Z DS110205 SGA8343Z-EVB4 1575MHz SGA-8343Z samsung cl SOT343 lna MICROWAVE DEVICES GaAs pHEMT LOW SOT-343 PDF

    mch185C102kk

    Abstract: MCR10JW000 cdi schematics pcb cdi schematics capacitor 0603 0603 CAPACITOR cdi schematic MCH185A180JK resistor 2512 ROHM capacitor
    Text: DATA SHEET ECG015 BROADBAND HIGH OIP3 AMPLIFIER 1800 - 2500 MHz Application Note: Reduction of Out of Band Gain By changing C4 the input coupling/blocking capacitor to 2.2pF from the 56pF, the out of band gain can be reduced to less than 12dB at 300MHz. The following BOM and schematics for 1.9


    Original     		ECG015 300MHz. 14GHz 14GHz 45GHz 1000pF CH185A010CK N0R7C500NT MD-000290-000 mch185C102kk MCR10JW000 cdi schematics pcb cdi schematics capacitor 0603 0603 CAPACITOR cdi schematic MCH185A180JK resistor 2512 ROHM capacitor PDF

    Untitled

    Abstract: No abstract text available
    Text: ECP203 PRELIMINARY DATA SHEET 2.0 WATT POWER AMPLIFIER Product Features Applications 2.1 - 2.7GHz 32.5 dBm P1dB High Linearity: 48 dBm OIP3 10 dB Linear Gain Single 5V Supply High Reliabilty Class A or AB operation Basestations and Repeaters Multi-carrier systems


    Original     		ECP203 QFN-16 ECP203 ECP203G ECP203G-500 ECP203G-1000 ECP203D ECP203D-500 ECP203D-1000 QFN-16 PDF

    SHF-0189

    Abstract: SHF-0289 AN-031 s-parameter file of SHF-0289 by Sirenza ML200C H H L C9 LL1608-FS6N8J amplifier shf MCH185A220J ef SOT-89 hfet
    Text: DESIGN APPLICATION NOTE - AN-031 SHF-0189 Amplifier Application Circuits Abstract Design Considerations and Trade-offs Sirenza Microdevices’ SHF-0189 is a high performance AlGaAs/GaAs Heterostructure FET HFET housed in a low-cost surface-mount plastic package. The HFET


    Original     		AN-031 SHF-0189 EAN-101798 SHF-0289 AN-031 s-parameter file of SHF-0289 by Sirenza ML200C H H L C9 LL1608-FS6N8J amplifier shf MCH185A220J ef SOT-89 hfet PDF

    SGA8343z

    Abstract: SGA-8343Z CL10B104K MCR03*J100 MCR03J242 MCR03J620 MCR03J SOT343 lna ROHM TRACE CODE ROHM trace code of lot
    Text: SGA8343Z SGA8343ZLow Noise, High Gain SiGe HBT LOW NOISE, HIGH GAIN SiGe HBT Package: SOT-343 Product Description Features RFMD’s SGA8343Z is a high performance Silicon Germanium Heterostructure Bipolar Transistor SiGe HBT designed for operation from DC to


    Original     		SGA8343ZLow SGA8343Z OT-343 SGA8343Z DS110620 SGA8343Z-EVB4 1575MHz SGA-8343Z CL10B104K MCR03*J100 MCR03J242 MCR03J620 MCR03J SOT343 lna ROHM TRACE CODE ROHM trace code of lot PDF

    130-082

    Abstract: IC TB 1237 AN NEC 7812 amplifier simulation circuit C band FET transistor s-parameters s2p n34018h AN1022 CS 5609 transistor NEC 7812 IC LM 7812
    Text: California Eastern Laboratories AN1022 APPLICATION NOTE Designing Low Noise Amplifiers for PCS Application ABSTRACT DEVICE CHOICE AND CHARACTERISTIC This application note will review the process by which microwave amplifier designers choose their designs based


    Original     		AN1022 24-Hour 130-082 IC TB 1237 AN NEC 7812 amplifier simulation circuit C band FET transistor s-parameters s2p n34018h AN1022 CS 5609 transistor NEC 7812 IC LM 7812 PDF

    samsung bluetooth

    Abstract: SGA8343Z SGA-8343 MCR03*J102 CL10B104KONC SGA-8343Z 8343
    Text: SGA-8343 Z SGA-8343(Z) Low Noise, High Gain SiGe HBT LOW NOISE, HIGH GAIN SiGe HBT Package: SOT-343 Product Description Features RFMD’s SGA-8343 is a high performance Silicon Germanium Heterostructure Bipolar Transistor (SiGe HBT) designed for operation from DC to


    Original     		SGA-8343 OT-343 SGA8343ZPCK-EVB2 SGA8343ZPCK-EVB3 SGA8343ZPCK-EVB4 DS100111 samsung bluetooth SGA8343Z MCR03*J102 CL10B104KONC SGA-8343Z 8343 PDF

    MCH153FN104Z

    Abstract: MCH185CN472K MCH185FN102Z MCH185CN102K MCH185A101J MCH155FN472Z MCH185CN331K MCH155CN472K MCH185CN152K MCH185A820J
    Text: Multi Layer Ceramic Chip Capacitors MCH15 Series - 1005 0402 Size, MCH18 Series - 1608 (0603) Size Barrier layer and end terminations to improve solderability. These capacitors are suitable for flow and reflow soldering and can be used in various applications.


    Original     		MCH15 MCH18 4316E MCH153FN104Z MCH185CN472K MCH185FN102Z MCH185CN102K MCH185A101J MCH155FN472Z MCH185CN331K MCH155CN472K MCH185CN152K MCH185A820J PDF