Untitled
Abstract: No abstract text available
Text: < L/S band internally matched power GaAs FET > MGFL45V1920A 1.9 – 2.0 GHz BAND / 32W OUTLINE DRAWING DESCRIPTION The MGFL45V1920A is an internally impedance-matched GaAs power FET especially designed for use in 1.9 - 2.0 GHz band amplifiers. The hermetically sealed metal-ceramic
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MGFL45V1920A
MGFL45V1920A
079MIN.
25ohm
GF-51
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFL45V1920A 1.9 - 2.0GHz BAND 32W INTERNALLY MATCHED GaAs FET DESCRIPTION The MGFL45V1920A is an internally impedance-matched GaAs power FET especially designed for use in 1.9 - 2.0 GHz band amplifiers.The hermetically sealed metal-ceramic
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MGFL45V1920A
MGFL45V1920A
079MIN.
-45dBc
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MGFL45V1920A
Abstract: No abstract text available
Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFL45V1920A 1.9 - 2.0GHz BAND 32W INTERNALLY MATCHED GaAs FET DESCRIPTION The MGFL45V1920A is an internally impedance-matched GaAs power FET especially designed for use in 1.9 - 2.0 GHz band amplifiers.The hermetically sealed metal-ceramic
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MGFL45V1920A
MGFL45V1920A
079MIN.
25deg
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MGFL45V1920A
Abstract: No abstract text available
Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFL45V1920A 1.9 - 2.0GHz BAND 32W INTERNALLY MATCHED GaAs FET DESCRIPTION The MGFL45V1920A is an internally impedance-matched GaAs power FET especially designed for use in 1.9 - 2.0 GHz band amplifiers.The hermetically sealed metal-ceramic
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MGFL45V1920A
MGFL45V1920A
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Untitled
Abstract: No abstract text available
Text: < L/S band internally matched power GaAs FET > MGFL45V1920A 1.9 – 2.0 GHz BAND / 32W OUTLINE DRAWING DESCRIPTION The MGFL45V1920A is an internally impedance-matched GaAs power FET especially designed for use in 1.9 - 2.0 GHz band amplifiers. The hermetically sealed metal-ceramic
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MGFL45V1920A
MGFL45V1920A
079MIN.
-45dBc
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Untitled
Abstract: No abstract text available
Text: < L/S band internally matched power GaAs FET > MGFL48V1920 1.9 – 2.0 GHz BAND / 60W DESCRIPTION The MGFL48V1920 is a 60W push-pull type GaAs power FET especially designed for use in 1.9 - 2.0 GHz band amplifiers. The hermetically sealed metal-ceramic package guarantees
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MGFL48V1920
MGFL48V1920
20ohm
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C42V5964
Abstract: MGF1302 TRANSISTOR MGF1601 MGFC1402 M57721 M67760LC H2 MARKING SOT-89 mmIC 2SC5125 MITSUBISHI M57710-A M68776
Text: Please Read “Notes” First! Contents Notes Contact Addresses MITSUBISHI ELECTRIC CORPORATION Contents Si Devices GaAs Devices Optical Devices Applications Quality Assurance and Reliability Testing Optical Modules Top Page © MITSUBISHI ELECTRIC CORPORATION
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M6STA-005VA/WA/SA
MF-156STA-006VA/WA/SA
MF-156SRA-002VA/WA/SA
MF-622STA-004VA/WA/SA
MF-622STA-005VA/WA/SA
MF-622STA-006VA/WA/SA
MF-622SRA-002VA/WA/SA
MF-2500STA-002VA/WA,
003VA/WA,
004VA/WA
C42V5964
MGF1302 TRANSISTOR
MGF1601
MGFC1402
M57721
M67760LC
H2 MARKING SOT-89 mmIC
2SC5125
MITSUBISHI M57710-A
M68776
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s band
Abstract: No abstract text available
Text: < L/S band internally matched power GaAs FET > MGFL48V1920 1.9 – 2.0 GHz BAND / 60W DESCRIPTION The MGFL48V1920 is a 60W push-pull type GaAs power FET especially designed for use in 1.9 - 2.0 GHz band amplifiers. The hermetically sealed metal-ceramic package guarantees
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MGFL48V1920
MGFL48V1920
20ohm
s band
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MGFL45V1920A
Abstract: No abstract text available
Text: PRELIMINARY MITSUBISHI SEMICONDUCTOR <GaAs FET> N otice: This is n o t a final specification. Some param etric lim its are subject to change. • m |y | ^ h | ■ m _ m mj a L 4 ¡ V I ^ ^ • 1.9-2.0GHz BAND 32W INTERNALLY MATCHED GaAs FET DESCRIPTION The MGFL45V1920A is an internally impedance-matched
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MGFL45V1920A
-45dBc
25deg
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S65A
Abstract: MGFL45V1920
Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFL45V1920 1.9 - 2.0GHz BAND 32W INTERNALLY MATCHED GaAs FET DESCRIPTION unit : mm OLTTUNE The M G F L45V 1920 is an internally impedance-matched GaAs power FET especially designed for use in 1.9 - 2.0 2 4 + /-0 .3 G H z band amplifiers.The hermetically sealed metal-ceramic
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MGFL45V1920
MGFL45V1920
-45dBc
S65A
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> « s is i.Ä= : MGFL45V1920 1.9-2.0GHZ BAND 30W INTERNALLY MATCHED GaAs FET DESCRIPTION O U T L IN E D R A W IN G The M G FL45V1920 is an internally impedance matched G aAs power FET especially designed for use in 1.9 - 2.0
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MGFL45V1920
FL45V1920
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MGFL45V1920
Abstract: No abstract text available
Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFL45V1920 1.9 - 2.0GHz BAND 32W INTERNALLY MATCHED GaAs FET DESCRIPTION unit : mm OUTLINE The MGFL45V1920 is an internally impedance-matched GaAs power FET especially designed for use in 1.9 - 2.0 24 +/- 0.3 GHz band amplifiers.The hermetically sealed metal-ceramic
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MGFL45V1920
MGFL45V1920
-45dBc
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