UC1637
Abstract: No abstract text available
Text: Mintech Semiconductors Ltd 2 Hellesdon Park Road Drayton High Road Norwich Norfolk NR6 5DR England Tel +44 0 1603 788967 Fax +44(0)1603 788920 Email sales@mintech.co.uk Web www.mintech.co.uk 18 17 15 14 13 PAD 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19
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UC1637
CF0012
UC1637
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analog devices die list
Abstract: 54AC245 74ACT04 LM108 LM137K SCAN18373T SCAN18374T SCANPSC100F SCANPSC110F
Text: N VOLUME NO. 2 1999 BARE DIE USE IS GROWING RAPIDLY CONTENTS he rapid demand for smaller and PAGE 1 Bare Die Use is Growing BARE DIE MEET smaller consumer products is Rapidly pushing designers and manufacQUALITY, RELIABILITY, Page 2 Boundary Scan Assists turers to reassess their selection of comAND PERFORMANCE
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DUT1508AL
Abstract: DUT1508ALN DUT1508-GG DUT1508S DUT1508 DUT1508-AG
Text: August 2009 DUT1508 – 800V, 15A Preliminary HIGH EFFICIENCY, TEMPERATURE INDEPENDENT GaAs RECTIFIER DIODE Features General Description High maximum junction temperature; up to +260°C vs. +175°C for silicon diodes Lower and temperature independent dynamic recovery characteristics over the
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DUT1508
DUT1508
DUT1508AL
DUT1508ALN
DUT1508-GG
DUT1508S
DUT1508-AG
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DUL1506
Abstract: DUL1506-AG DUL1506AL DUL1506ALN DUL1506-GG DUL1506S silicon carbide
Text: August 2009 DUL1506 – 600V, 15A Preliminary HIGH EFFICIENCY, TEMPERATURE INDEPENDENT GaAs RECTIFIER DIODE Features General Description High maximum junction temperature; up to +260°C vs. +175°C for silicon diodes Lower and temperature independent dynamic recovery characteristics over the
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DUL1506
DUL1506
DUL1506-AG
DUL1506AL
DUL1506ALN
DUL1506-GG
DUL1506S
silicon carbide
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Mintech Semiconductors
Abstract: M128S32
Text: M128S32 128K x 32 Fast SRAM Issue 1.0 July 2003 General Description Features The M128S32 is a high reliability 4Mbit fast static ram housed in high temperature co-fired ceramic. Access times are 20, 25 or 35ns, with 15 & 17ns in development. For surface mount applications there
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M128S32
M128S32
128Kx32
256Kx16
512Kx8.
M128S32GAMB-xxx
M128S32P-xxx
M128S32PI-xxx
M128S32PM-xxx
M128S32PMB-xxx
Mintech Semiconductors
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LM358 RF receiver module
Abstract: DS26C31T light sensor lm324 and lm339 in circuit functions light sensor in lm324 and lm339 LM324 temperature controller LM386-1 LM723 LMX2336 detonators functions light sensor in lm324
Text: N VOLUME NO. 5 2000 THE PROLIFERATION OF DIE PRODUCTS COMMUNICATION SYSTEMS he trend in the electronics industry is toward smaller and lighter with higher performance. Fueling this trend is continuing silicon integration as well as advanced packaging technologies. The ultimate "packaging" technology in terms of supporting
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DUT1507
Abstract: DUT1507-AG DUT1507AL DUT1507ALN DUT1507-GG DUT1507S to-276ab CLIFTON
Text: August 2009 DUT1507 – 700V, 15A Preliminary HIGH EFFICIENCY, TEMPERATURE INDEPENDENT GaAs RECTIFIER DIODE Features General Description High maximum junction temperature; up to +260°C vs. +175°C for silicon diodes Lower and temperature independent dynamic recovery characteristics over the
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DUT1507
DUT1507
DUT1507-AG
DUT1507AL
DUT1507ALN
DUT1507-GG
DUT1507S
to-276ab
CLIFTON
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DUL1504
Abstract: DUL1504-AG DUL1504AL DUL1504ALN DUL1504-GG DUL1504S
Text: August 2009 DUL1504 – 400V, 15A Preliminary HIGH EFFICIENCY, TEMPERATURE INDEPENDENT GaAs RECTIFIER DIODE Features General Description High maximum junction temperature; up to +260°C vs. +175°C for silicon diodes Lower and temperature independent dynamic recovery characteristics over the
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DUL1504
DUL1504
DUL1504-AG
DUL1504AL
DUL1504ALN
DUL1504-GG
DUL1504S
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seam seal process
Abstract: LMC7255 Minco Products PC16552 LMC668
Text: N ANALYSIS OF VOLUME NO. 6 2000 DIE ASSEMBLY TECHNIQUES CONTENTS PAGE 1 ystem and board manufacturers that use bare die or flip-chip – such as National Semiconductor’s Die Products – have access to a wide variety of assembly methods that will produce high yield, high reliability systems. The following review of
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outsourcing IBM
Abstract: avnet celestica flextronics national semiconductor CC
Text: Considerations in Converting from SMT to Die Assemblies National Semiconductor Technical Seminar Series Die Product Business Unit June 26 2003 1 Approaches, Options & Solutions • Die conversion trends and drivers • Die interconnect approaches • Device and information resources
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Mintech Semiconductors
Abstract: M128 D28A0 M128E32 M128E32G-
Text: M128E32 128K x 32 EEPROM Issue 2.0 June 2004 General Description Features 4 Megabit EEPROM module. Access Times of 120/150/200 ns. Output Configurable as 32/ 16/ 8 bit wide. Upgradeable footprint Operating Power 1600/ 830/ 445 mW Max . Low Power Standby 2.2 mW (Max).
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M128E32
M128E32
200ns.
128Kx32bits
256Kx16
51Kx8.
MIL-STD-883
Mintech Semiconductors
M128
D28A0
M128E32G-
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Untitled
Abstract: No abstract text available
Text: MP1000VS32JC 1M x 32 Fast SRAM PLCC Issue 1.0 December 2005 General Description Features The MP1000VS32JC device is a 1M x 32 SRAM module housed in a 68 Jleaded package which complies with the JEDEC 68 PLCC standard. Access times of 12, 15 or 20 ns are available. The 3V device is
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MP1000VS32JC
MP1000VS32JC
435mton
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SST511
Abstract: No abstract text available
Text: SST511 Linear Systems replaces discontinued Siliconix SST511 Current Regulator Diode — POV min 45 V Features: Description: Surface-Mount Package Guaranteed ±20% Tolerance POV (min) 45V Good Temperature Stability The SST511 belongs to a family of ±20% range current
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SST511
SST511
OT-23
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LM6462
Abstract: LM6464 LM103-3.6 54ACT3301 38510R75001 SMD MARKING CODE ACQ lm1242 MM54HC564 LH0041CJ 54AC00
Text: N 4 N TABLE OF CONTENTS Included in this guide are the Enhanced Solutions products that are offered by National Semiconductor, their qualification levels, and packages as well as available process flows, radiation testing, and other information that can support your design.
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1-877-Dial-Die
LM6462
LM6464
LM103-3.6
54ACT3301
38510R75001
SMD MARKING CODE ACQ
lm1242
MM54HC564
LH0041CJ
54AC00
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DUT1505
Abstract: DUT1505-AG DUT1505AL DUT1505ALN DUT1505-GG DUT1505S silicon carbide
Text: August 2009 DUT1505 – 500V, 15A Preliminary HIGH EFFICIENCY, TEMPERATURE INDEPENDENT GaAs RECTIFIER DIODE Features General Description High maximum junction temperature; up to +260°C vs. +175°C for silicon diodes Lower and temperature independent dynamic recovery characteristics over the
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DUT1505
DUT1505
DUT1505-AG
DUT1505AL
DUT1505ALN
DUT1505-GG
DUT1505S
silicon carbide
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RF CONTROLLED ROBOT
Abstract: Mil-STD-198 RF CONTROLLED ROBOT with wireless camera register electronica unitrode manual VLSI Vision LM2595 LM2595J-ADJ-QML M38510 USD245
Text: Volume No. 18 2000 Welcome to the Year 2000 CONTENTS At this time of year everyone tends to review the last year and look forward to the new. During the last year, the high reliability market has changed with the pendulum seemingly swinging back toward the use of military-grade components; however, many
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teradyne victory
Abstract: LMX2305WG-QML LMX2305WG-MLS CLC452 LMX2305 LMX2315 LMX2315WG-QML LMX2325 LMX2326 LMX2330
Text: VOLUME NO. 15 1998 Phase Lock Loops Qualified for Military and Space Applications T oday’s communications and signal processing design requirements dictate more processing capacity in smaller volumes, operation for longer periods of time, and lower power consumption.
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550MHz
teradyne victory
LMX2305WG-QML
LMX2305WG-MLS
CLC452
LMX2305
LMX2315
LMX2315WG-QML
LMX2325
LMX2326
LMX2330
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linear application handbooks national semiconductor
Abstract: F100K ECL Users Handbook JEP133 bipolar cots radiation radiation hard PLL national semiconductor logic 1981 cmos cots radiation lvds pioneer linear application handbook national semiconductor AN-926
Text: N Total Ionizing Dose Radiation Data krads, typical 10 30 50 Analog CMOS Op Amps Bipolar Op Amps Comlinear Comparators Data Acquisition References Regulators Low Dropout Voltage Regulators Motor Drivers Phased Lock Loops (PLL) ASIC CMOS Gate Array (.65µm)
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CD4K/54C
linear application handbooks national semiconductor
F100K ECL Users Handbook
JEP133
bipolar cots radiation
radiation hard PLL
national semiconductor logic 1981
cmos cots radiation
lvds pioneer
linear application handbook national semiconductor
AN-926
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JM38510/01405BEA
Abstract: EPROM databook AMD pcb repair 54AC299 5962-8961501QXA 5962-8961501VPA DS16F95 DS16F95J-QMLV JM38510 54AC273DMQB
Text: N VOLUME NO. 16 1999 1999 WILL HAVE MANY CHALLENGES A s we enter 1999, the many changes that started in the Military/Aerospace market over the past few years continue unabated. Driven by the need to use the latest technology and the government’s initiative to reduce the acquisition cost of equipment, we have seen:
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10GHz clock oscillator
Abstract: MC10xxx NBSG14 MC12095 laser driver, STM-64 500MHz Frequency Counter Using MECL 10K3 NBSG11 DL122-D NBSG16
Text: BRD8017/D Rev. 4, Apr-2002 Clock and Data Management Solutions High Performance Data Management, Advanced Clock Management and Communication ASSPs ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC SCILLC . SCILLC reserves the right to make changes
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BRD8017/D
Apr-2002
r14525
10GHz clock oscillator
MC10xxx
NBSG14
MC12095
laser driver, STM-64
500MHz Frequency Counter Using MECL
10K3
NBSG11
DL122-D
NBSG16
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DUL1505
Abstract: DUL1505-AG DUL1505AL DUL1505ALN DUL1505-GG DUL1505S
Text: August 2009 DUL1505 – 500V, 15A Preliminary HIGH EFFICIENCY, TEMPERATURE INDEPENDENT GaAs RECTIFIER DIODE Features General Description High maximum junction temperature; up to +260°C vs. +175°C for silicon diodes Lower and temperature independent dynamic recovery characteristics over the
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DUL1505
DUL1505
DUL1505-AG
DUL1505AL
DUL1505ALN
DUL1505-GG
DUL1505S
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2SK170BL
Abstract: 2SK508 tcxo philips 4322 BFG135 power amplifier for 900Mhz 2SK147BL 2sk162 hitachi 2sk170y toshiba 2sk170bl BF1009SW philips rf manual
Text: 4th edition RF Manual product & design manual for RF small signal discretes Page: 1 Philips RF Manual product & design manual for RF small signal discretes 4 edition March 2004 th / discretes/documentation/rf_manual
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BF1107/8
BGA2715-17
BGA6x89
2SK170BL
2SK508
tcxo philips 4322
BFG135 power amplifier for 900Mhz
2SK147BL
2sk162 hitachi
2sk170y
toshiba 2sk170bl
BF1009SW
philips rf manual
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500MHz Frequency Counter Using MECL
Abstract: 10GHz counters MC12095 mc12080 llc converter spice model AN-1402 DL122-D NBSG14
Text: BRD8017/D Rev. 3, Nov-2001 Broadband Solutions High Performance Digital, Advanced Clock Management and Communication ASSPs ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC SCILLC . SCILLC reserves the right to make changes without further
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BRD8017/D
Nov-2001
10/100H
r14525
BRD8017/D
500MHz Frequency Counter Using MECL
10GHz counters
MC12095
mc12080
llc converter spice model
AN-1402
DL122-D
NBSG14
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mintech
Abstract: No abstract text available
Text: M512S32 512K x 32 Fast SRAM Issue 2.0 July 2004 General Description Features The M512S32 is a hi-rel grade16Mbit fast Static RAM multichip module, that is normally organised as 512Kx32 bits wide , but can also be user configured as 1Mx16 or 2Mx8. Access times are available as 20,
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M512S32
M512S32
grade16Mbit
512Kx32
1Mx16
MIL-STD-883
15/17ns
mintech
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