Untitled
Abstract: No abstract text available
Text: VOLTAGE CONTROLLED CRYSTAL OSCILLATORS 7100 SERIES • Model 7121D ■ Main applications : ISDN ■ Features 8 Dip14pin IC compatible 8 AFC charact : ±100x10–6 min/+2.5±2.0V 8 Directly drives both TTL/C-MOS IC 8 Hermetically sealed package ■ Specification
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7121D
Dip14pin
7121D
AVR81
35MHz
11max
13max
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Untitled
Abstract: No abstract text available
Text: VOLTAGE CONTROLLED CRYSTAL OSCILLATORS 7100 SERIES • Model 7121D ■ Main applications : ISDN ■ Features 8 Dip14pin IC compatible 8 AFC charact. : ±100x10–6 min/+2.5±2.0V 8 Directly drives both TTL/C-MOS IC 8 Hermetically sealed package ■ Specification
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Original
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PDF
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7121D
Dip14pin
7121D
AVR81
35MHz
11max
13max
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7121D
Abstract: No abstract text available
Text: CRYSTAL OSCILLATORS VOLTAGE CONTROLLED CRYSTAL OSCILLATORS 7100 SERIES • Model 7121D ■ Main applications : ISDN ■ Features 8 Dip14pin IC compatible 8 AFC charact : ±100x10–6 min/+2.5±2.0V 8 Directly drives both TTL/C-MOS IC 8 Hermetically sealed package
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Original
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7121D
Dip14pin
AVR71
AVR81
35MHz
35MHz
7121D
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7121D
Abstract: No abstract text available
Text: #4. P126-160 02.2.5 4:08 PM ページ 131 VOLTAGE CONTROLLED CRYSTAL OSCILLATORS 7100 SERIES • Model 7121D ■ Main applications : ISDN ■ Features 8 Dip14pin IC compatible 8 AFC charact : ±100x10–6 min/+2.5±2.0V 8 Directly drives both TTL/C-MOS IC
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P126-160
7121D
Dip14pin
AVR71
AVR81
35MHz
35MHz
7121D
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sun hold RAS 0610
Abstract: oki Logic Motorola transistor 7144 MSC2304 M5M41000
Text: Selector Guide and Cross Reference CMOS Dynamic RAMs DRAM Modules Video RAMs Pseudo Static RAMs General MOS Static RAMs CMOS Fast Static RAMs CMOS Fast Static RAM Modules Application Specific MOS Static RAMs MOS EEPROM Military Products Reliability Information
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A16685-7
EMTR1147
sun hold RAS 0610
oki Logic
Motorola transistor 7144
MSC2304
M5M41000
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mcm2018a
Abstract: sun hold RAS 0610 cqq 765 RT IC HX 710B U256D
Text: Selector Guide and Cross Reference CMOS Dynamic RAMs DRAM Modules Video RAMs Pseudo Static RAMs General MOS Static RAMs CMOS Fast Static RAMs CMOS Fast Static RAM Modules Application Specific MOS Static RAMs MOS EEPROM Military Products Reliability Information
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OCR Scan
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PDF
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A16685-7
EMTR1147
mcm2018a
sun hold RAS 0610
cqq 765 RT
IC HX 710B
U256D
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SGSP211
Abstract: sgsp312 P512 74c74 P312 Diode D7E
Text: s G S-T H O H SO N G7E : 73C D I 1 7 3 j> 7 7121237 D DÜ 17SSQ 7 T ~-3?-/r_ SGSP211/P212 SGSP311/P312 ? SGSP511/P512 N-CHANNHL POWER MOS TRANSISTORS HIGH SPEED SW ITCHING APPLICATIONS These products are diffused multi-cell silicon gate N-Channel enhancement mode Power-Mos field
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17SSQ
SGSP211/P212
SGSP311/P312
SGSP511/P512
SGSP211
SGSP311
SGSP511
SGSP212
SGSP312
SGSP512
P512
74c74
P312
Diode D7E
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5358A
Abstract: d 317 transistor TSD4M251F TSD4M251V SP 358 s
Text: 3QE D • 7^237 Q0305Sb b SGS-THOMSON IILHO T *! Ç7 ' r 3 °i S G S-THOMSON 5 TSD4M251F TSD4M251V N - CHANNEL ENHANCEMENT MODE ISOFET POWER MOS TRANSISTOR MODULE TY P E V dss RDS on Id TS D 4M 251F/V 150 V 0.021 n 110 A . . ■ ■ . . ■ . HIGH CURRENT POWER MOS MODULE
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Q0305Sb
251F/V
TSD4M251F
TSD4M251V
STH33N20FI
T-91-20
O-240)
PC-029«
5358A
d 317 transistor
TSD4M251V
SP 358 s
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8n10
Abstract: SGSP311 8n08 SEFM8N08
Text: S G S-THOHSON 0?E- D | -7=12^237 .D01flQfl*î 7 | 73C 1 7 5 8 6 D J T*3>^~U SEFM8N08 SEFM8N10 SEFP8N08 \ ’ N-CHANNEL POWER MOS TRANSISTORS SEFP8N,° HIGH SPEED SWITCHING APPLICATIONS v DSS These products are diffused multi-cell silicon gate N-Channel enhancement mode Power-Mos field
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D01flQfl*
SEFM8N08
SEFM8N10
SEFP8N08
300jjs
SGSP311
C-311
8n10
8n08
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display 7 segmento sm 4105
Abstract: NS_Databook_77 MA1012 MA1002 MM5799 MM5318 MM57109 mm5782n Remote Control Toy Car Receiver IC tx2 MM5871
Text: MOS/LSI DATABOOK NATIONAL SEMICONDUCTOR i Edge Index by Product Family Clocks Counters/Timers Electronic Organ Circuits TV Circuits Analog to Digital A /D Converters Communications/CB Radio Circuits Watches Calculators Controller Oriented Processor Systems (COPS)
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MM5309
MM5311
J28592
IM-CP70M17/PRINTED
display 7 segmento sm 4105
NS_Databook_77
MA1012
MA1002
MM5799
MM5318
MM57109
mm5782n
Remote Control Toy Car Receiver IC tx2
MM5871
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SGSP
Abstract: sgs*P381 SGSP382
Text: 30E D • 7121237 ÜQ3QD11 fi ■ 'T-3tf- 3_ SGS-THOMSON S G S-THOMSON SGSP381 ilUiOT li*§ ” ' SGSP382 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE SGSP381 SGSP382 • • • • • Voss 60 V 50 V ^DSfon 0.06 fi 0.06 fi 'd 28 A 28 A HIGH SPEED SWITCHING APPLICATIONS
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Q3QD11
SGSP381
SGSP382
QQ30Q1S
SGSP381
SGSP
sgs*P381
SGSP382
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TP3055A
Abstract: No abstract text available
Text: 3DE » _ • 7121537 0021005 1 B T - ^ . d rz j SGS-THOMSON ^7# G*MiHi graRl(gS S G S-TH0MS0N TYPE MTP3055A MTP3055AFI V DSS 60 V 60 V MTP3055A MTP3055AFI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS ^DS(on 0.15 Q 0.15 ß ■ 'd 12 A 10 A • ULTRA FAST SWITCHING - UP TO > 100KHz
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MTP3055A
MTP3055AFI
100KHz
O-220
500ms
TP3055A
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4060BE
Abstract: 4060BD hcf4060be 4060B 4060 PIN DIAGRAM 4060b pin configuration diagram cx 4060
Text: s cos/Mos g S-THOMSON 07C » I 712133? o o m a sa 1 I IN T E G R A T E D X ' fs hccîhcf « kob . i :}'-k_ - I l i C IR C U IT 41C 08835 14-STAGE RIPPLE-CARRY BINARY COUNTER/DIVIDER AND OSCILLATOR • • • • • • • • • MEDIUM-SPEED OPERATION
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14-STAGE
4060B
4060BE
4060BD
hcf4060be
4060B
4060 PIN DIAGRAM
4060b pin configuration diagram
cx 4060
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Untitled
Abstract: No abstract text available
Text: TOSHIBA TPC8202 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-MOSVI TPC8202 INDUSTRIAL APPLICATIONS U nit in mm LITHIUM ION BATTERY NOTE BOOK PC PORTABLE MACHINES AND TOOLS 8 5 B n fl fl • 2.5V Gate Drive • Low Drain-Source ON Resistance
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TPC8202
10//A
20kfl)
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Untitled
Abstract: No abstract text available
Text: SGS-THOMSON z a STW6NA80 STH6NA80FI :LiGTISi KlD @i N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR PRELIMINARY DATA TYPE STWNA80 STH6NA80FI . m . • . . . V dss R ds(od Id 800 V 800 V < 2.4 fi < 2.4 n 5.4 A 3.4 A TYPICAL RDS(on) =0.012 Q. AVALANCE RUGGED TECHNOLOGY
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STW6NA80
STH6NA80FI
STWNA80
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SP571
Abstract: diode sg 71 diode sg 47 sgsp571 sp 571 diode sg 55 diode c142 SG-47 diode C144 e s j P472
Text: S G S-THOMSON 07E 1> j TTETEB? OOlT'iai 4 ï 73C 17418 J}_ 7 Z 3 J - / 3 SGSP47Í/P472¿| |SGSP571/F572| l\l-CHANNEL POWER MOS TRANSISTORS HIGH SPEED SWITCHING APPLICATIONS These products are diffused multi-cell silicon gate N-Channel enhancement mode Pow er-M os field
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SGSP47
/P472¿
SGSP571/F572|
SP472
SP572
OT-93
SP471
SP571
T471/P472
SGSP57I/P572
diode sg 71
diode sg 47
sgsp571
sp 571
diode sg 55
diode c142
SG-47 diode
C144 e s j
P472
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Untitled
Abstract: No abstract text available
Text: C T S G S -1 H M S 0 N ^ 7# S T V 5 5 N0 5 L N - CHANNEL ENHANCEMENT MODE LOW THRESHOLD POWER MOS TRANSISTOR TYPE STV55N05L V dss RDS on Id 50 V < 0.023 Û 55 A • . . . . . . . TYPICAL Ros(on) = 0.02 £1 AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED
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STV55N05L
7121E37
SO-10
0068039-C
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Untitled
Abstract: No abstract text available
Text: 7T2TE37 ÜOMSb?^ 752 • S G T H IRF720 IRF720FI SGS-THOMSON ULIKgTO«! N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE IRF720 IRF720FI ■ . ■ ■ « V dss R D S on Id 400 V 400 V < 1.8 £2 < 1 .8 0 4.2 A 3 A TYPICAL RDs(on) = 1.65 £2 AVALANCHE RUGGED TECHNOLOGY
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7T2TE37
IRF720
IRF720FI
IRF720/FI
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Schematics AL 1450 DV
Abstract: ixc 844 schematic diagram welding inverter STP5N80 845 diode DC/AC to DC smps circuit diagram schematic diagram dc-ac inverter schematic diagram dc-ac welding inverter CIRCUIT STP5N80FI RC50
Text: _ • 7^2^237 00Mb2öl « V# _ BiSGTH S C S -T H O M S O N [*^ Q [E[L gTi»«S STP5N80 STP5N80FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE V STP5N80 S TP5N 80FI ■ . . . . ■ . dss 800 V 800 V RDS(on) Id < 2 0 < 2 n 5 .5 A
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PDF
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STP5N80
STP5N80FI
STP5N80
STP5N80FI
004b5B7
STP5N80/FI
Schematics AL 1450 DV
ixc 844
schematic diagram welding inverter
845 diode
DC/AC to DC smps circuit diagram
schematic diagram dc-ac inverter
schematic diagram dc-ac welding inverter CIRCUIT
RC50
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IRF151
Abstract: No abstract text available
Text: 3QE D £Ÿ 7 • 7=12^537 QQ3G1SÖ 7 ■ H " . -<3 SCS-THOMSON S G S-THOMSON ■[LH^MKgS “ IRF151 CHIP N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR IN DIE FORM DIE SIZE: 221 x221 mils METALLIZATION: Top Al Back A u /C r/N i/A u BACKSIDE THICKNESS: 6100 A
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IRF151
56x43
18x18
IRF151ECTRICAL
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irf720
Abstract: diode ko 474
Text: 7T2TE37 ÜOMSb?^ 752 • S G T H IRF720 IRF720FI SGS-THOMSON ULIKgTO«! N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE IRF720 IRF720FI ■ . ■ ■ « V dss R D S on Id 400 V 400 V < 1.8 £2 < 1 .8 0 4.2 A 3 A TYPICAL RDs(on) = 1.65 £2 AVALANCHE RUGGED TECHNOLOGY
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00MSb71
IRF720
IRF720FI
IRF720FI
400VDs
7T2TS37
IRF720/FI
diode ko 474
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SGSP239
Abstract: No abstract text available
Text: 3QE » • 002^33 r z z SGS-THOMSON ^7# R5ilD g[E](s i[L[i ¥^©iö(gi 5 'T g s-thohso_n_ SGSP239 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE SGSP239 VDss 500 V ^ D S (o n ) 8.5 n 1.2 A • HIGH SPEED SWITCHING APPLICATIONS • ULTRA FAST SWITCHING
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SGSP239
OT-82
OT-194
Tjs1503Cxl
JP239
SGSP239
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STV60N06
Abstract: No abstract text available
Text: r z 7 SGS-THOMSON Ä 7 # R!tlD S[ri ilLICTi iD©l STV60N06 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE V dss RDS(on Id STV60N06 60 V < 0.02 Û 60 A • TYPICAL R d s (o ii) = 0.017 £2 . AVALANCHE RUGGED TECHNOLOGY . 100% AVALANCHE TESTED . REPETITIVE AVALANCHE DATA AT 100°C
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STV60N06
GD73110
STV60N06
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hcf4047be
Abstract: n13a hcf4047
Text: rz r ^ 7 1 S G S -T H O M S O N c iia n e æ iiL iiC T M n e g H C C /H C F 4 0 4 7 B LOW-POWER MONOSTABLE/ASTABLE MULTIVIBRATOR . LOW POWER CONSUMPTION : SPECIAL COS/MOS OSCILLATOR CONFIGURATION . MONOSTABLE one-shot OR ASTABLE (freerunning) OPERATION . TRUE AND COMPLEMENTED BUFFERED
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100nA
00bb374
HCC/HCF4047B
PLCC20
71E1237
DGbb37S
hcf4047be
n13a
hcf4047
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