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    MOS 7121 Search Results

    MOS 7121 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TPHR7404PU Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 0.00074 Ω@10V, SOP Advance, U-MOS-H Visit Toshiba Electronic Devices & Storage Corporation
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation

    MOS 7121 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: VOLTAGE CONTROLLED CRYSTAL OSCILLATORS 7100 SERIES • Model 7121D ■ Main applications : ISDN ■ Features 8 Dip14pin IC compatible 8 AFC charact : ±100x10–6 min/+2.5±2.0V 8 Directly drives both TTL/C-MOS IC 8 Hermetically sealed package ■ Specification


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    PDF 7121D Dip14pin 7121D AVR81 35MHz 11max 13max

    Untitled

    Abstract: No abstract text available
    Text: VOLTAGE CONTROLLED CRYSTAL OSCILLATORS 7100 SERIES • Model 7121D ■ Main applications : ISDN ■ Features 8 Dip14pin IC compatible 8 AFC charact. : ±100x10–6 min/+2.5±2.0V 8 Directly drives both TTL/C-MOS IC 8 Hermetically sealed package ■ Specification


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    PDF 7121D Dip14pin 7121D AVR81 35MHz 11max 13max

    7121D

    Abstract: No abstract text available
    Text: CRYSTAL OSCILLATORS VOLTAGE CONTROLLED CRYSTAL OSCILLATORS 7100 SERIES • Model 7121D ■ Main applications : ISDN ■ Features 8 Dip14pin IC compatible 8 AFC charact : ±100x10–6 min/+2.5±2.0V 8 Directly drives both TTL/C-MOS IC 8 Hermetically sealed package


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    PDF 7121D Dip14pin AVR71 AVR81 35MHz 35MHz 7121D

    7121D

    Abstract: No abstract text available
    Text: #4. P126-160 02.2.5 4:08 PM ページ 131 VOLTAGE CONTROLLED CRYSTAL OSCILLATORS 7100 SERIES • Model 7121D ■ Main applications : ISDN ■ Features 8 Dip14pin IC compatible 8 AFC charact : ±100x10–6 min/+2.5±2.0V 8 Directly drives both TTL/C-MOS IC


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    PDF P126-160 7121D Dip14pin AVR71 AVR81 35MHz 35MHz 7121D

    sun hold RAS 0610

    Abstract: oki Logic Motorola transistor 7144 MSC2304 M5M41000
    Text: Selector Guide and Cross Reference CMOS Dynamic RAMs DRAM Modules Video RAMs Pseudo Static RAMs General MOS Static RAMs CMOS Fast Static RAMs CMOS Fast Static RAM Modules Application Specific MOS Static RAMs MOS EEPROM Military Products Reliability Information


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    PDF A16685-7 EMTR1147 sun hold RAS 0610 oki Logic Motorola transistor 7144 MSC2304 M5M41000

    mcm2018a

    Abstract: sun hold RAS 0610 cqq 765 RT IC HX 710B U256D
    Text: Selector Guide and Cross Reference CMOS Dynamic RAMs DRAM Modules Video RAMs Pseudo Static RAMs General MOS Static RAMs CMOS Fast Static RAMs CMOS Fast Static RAM Modules Application Specific MOS Static RAMs MOS EEPROM Military Products Reliability Information


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    PDF A16685-7 EMTR1147 mcm2018a sun hold RAS 0610 cqq 765 RT IC HX 710B U256D

    SGSP211

    Abstract: sgsp312 P512 74c74 P312 Diode D7E
    Text: s G S-T H O H SO N G7E : 73C D I 1 7 3 j> 7 7121237 D DÜ 17SSQ 7 T ~-3?-/r_ SGSP211/P212 SGSP311/P312 ? SGSP511/P512 N-CHANNHL POWER MOS TRANSISTORS HIGH SPEED SW ITCHING APPLICATIONS These products are diffused multi-cell silicon gate N-Channel enhancement mode Power-Mos field


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    PDF 17SSQ SGSP211/P212 SGSP311/P312 SGSP511/P512 SGSP211 SGSP311 SGSP511 SGSP212 SGSP312 SGSP512 P512 74c74 P312 Diode D7E

    5358A

    Abstract: d 317 transistor TSD4M251F TSD4M251V SP 358 s
    Text: 3QE D • 7^237 Q0305Sb b SGS-THOMSON IILHO T *! Ç7 ' r 3 °i S G S-THOMSON 5 TSD4M251F TSD4M251V N - CHANNEL ENHANCEMENT MODE ISOFET POWER MOS TRANSISTOR MODULE TY P E V dss RDS on Id TS D 4M 251F/V 150 V 0.021 n 110 A . . ■ ■ . . ■ . HIGH CURRENT POWER MOS MODULE


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    PDF Q0305Sb 251F/V TSD4M251F TSD4M251V STH33N20FI T-91-20 O-240) PC-029« 5358A d 317 transistor TSD4M251V SP 358 s

    8n10

    Abstract: SGSP311 8n08 SEFM8N08
    Text: S G S-THOHSON 0?E- D | -7=12^237 .D01flQfl*î 7 | 73C 1 7 5 8 6 D J T*3>^~U SEFM8N08 SEFM8N10 SEFP8N08 \ ’ N-CHANNEL POWER MOS TRANSISTORS SEFP8N,° HIGH SPEED SWITCHING APPLICATIONS v DSS These products are diffused multi-cell silicon gate N-Channel enhancement mode Power-Mos field


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    PDF D01flQfl* SEFM8N08 SEFM8N10 SEFP8N08 300jjs SGSP311 C-311 8n10 8n08

    display 7 segmento sm 4105

    Abstract: NS_Databook_77 MA1012 MA1002 MM5799 MM5318 MM57109 mm5782n Remote Control Toy Car Receiver IC tx2 MM5871
    Text: MOS/LSI DATABOOK NATIONAL SEMICONDUCTOR i Edge Index by Product Family Clocks Counters/Timers Electronic Organ Circuits TV Circuits Analog to Digital A /D Converters Communications/CB Radio Circuits Watches Calculators Controller Oriented Processor Systems (COPS)


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    PDF MM5309 MM5311 J28592 IM-CP70M17/PRINTED display 7 segmento sm 4105 NS_Databook_77 MA1012 MA1002 MM5799 MM5318 MM57109 mm5782n Remote Control Toy Car Receiver IC tx2 MM5871

    SGSP

    Abstract: sgs*P381 SGSP382
    Text: 30E D • 7121237 ÜQ3QD11 fi ■ 'T-3tf- 3_ SGS-THOMSON S G S-THOMSON SGSP381 ilUiOT li*§ ” ' SGSP382 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE SGSP381 SGSP382 • • • • • Voss 60 V 50 V ^DSfon 0.06 fi 0.06 fi 'd 28 A 28 A HIGH SPEED SWITCHING APPLICATIONS


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    PDF Q3QD11 SGSP381 SGSP382 QQ30Q1S SGSP381 SGSP sgs*P381 SGSP382

    TP3055A

    Abstract: No abstract text available
    Text: 3DE » _ • 7121537 0021005 1 B T - ^ . d rz j SGS-THOMSON ^7# G*MiHi graRl(gS S G S-TH0MS0N TYPE MTP3055A MTP3055AFI V DSS 60 V 60 V MTP3055A MTP3055AFI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS ^DS(on 0.15 Q 0.15 ß ■ 'd 12 A 10 A • ULTRA FAST SWITCHING - UP TO > 100KHz


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    PDF MTP3055A MTP3055AFI 100KHz O-220 500ms TP3055A

    4060BE

    Abstract: 4060BD hcf4060be 4060B 4060 PIN DIAGRAM 4060b pin configuration diagram cx 4060
    Text: s cos/Mos g S-THOMSON 07C » I 712133? o o m a sa 1 I IN T E G R A T E D X ' fs hccîhcf « kob . i :}'-k_ - I l i C IR C U IT 41C 08835 14-STAGE RIPPLE-CARRY BINARY COUNTER/DIVIDER AND OSCILLATOR • • • • • • • • • MEDIUM-SPEED OPERATION


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    PDF 14-STAGE 4060B 4060BE 4060BD hcf4060be 4060B 4060 PIN DIAGRAM 4060b pin configuration diagram cx 4060

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA TPC8202 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-MOSVI TPC8202 INDUSTRIAL APPLICATIONS U nit in mm LITHIUM ION BATTERY NOTE BOOK PC PORTABLE MACHINES AND TOOLS 8 5 B n fl fl • 2.5V Gate Drive • Low Drain-Source ON Resistance


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    PDF TPC8202 10//A 20kfl)

    Untitled

    Abstract: No abstract text available
    Text: SGS-THOMSON z a STW6NA80 STH6NA80FI :LiGTISi KlD @i N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR PRELIMINARY DATA TYPE STWNA80 STH6NA80FI . m . • . . . V dss R ds(od Id 800 V 800 V < 2.4 fi < 2.4 n 5.4 A 3.4 A TYPICAL RDS(on) =0.012 Q. AVALANCE RUGGED TECHNOLOGY


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    PDF STW6NA80 STH6NA80FI STWNA80

    SP571

    Abstract: diode sg 71 diode sg 47 sgsp571 sp 571 diode sg 55 diode c142 SG-47 diode C144 e s j P472
    Text: S G S-THOMSON 07E 1> j TTETEB? OOlT'iai 4 ï 73C 17418 J}_ 7 Z 3 J - / 3 SGSP47Í/P472¿| |SGSP571/F572| l\l-CHANNEL POWER MOS TRANSISTORS HIGH SPEED SWITCHING APPLICATIONS These products are diffused multi-cell silicon gate N-Channel enhancement mode Pow er-M os field


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    PDF SGSP47 /P472¿ SGSP571/F572| SP472 SP572 OT-93 SP471 SP571 T471/P472 SGSP57I/P572 diode sg 71 diode sg 47 sgsp571 sp 571 diode sg 55 diode c142 SG-47 diode C144 e s j P472

    Untitled

    Abstract: No abstract text available
    Text: C T S G S -1 H M S 0 N ^ 7# S T V 5 5 N0 5 L N - CHANNEL ENHANCEMENT MODE LOW THRESHOLD POWER MOS TRANSISTOR TYPE STV55N05L V dss RDS on Id 50 V < 0.023 Û 55 A • . . . . . . . TYPICAL Ros(on) = 0.02 £1 AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED


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    PDF STV55N05L 7121E37 SO-10 0068039-C

    Untitled

    Abstract: No abstract text available
    Text: 7T2TE37 ÜOMSb?^ 752 • S G T H IRF720 IRF720FI SGS-THOMSON ULIKgTO«! N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE IRF720 IRF720FI ■ . ■ ■ « V dss R D S on Id 400 V 400 V < 1.8 £2 < 1 .8 0 4.2 A 3 A TYPICAL RDs(on) = 1.65 £2 AVALANCHE RUGGED TECHNOLOGY


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    PDF 7T2TE37 IRF720 IRF720FI IRF720/FI

    Schematics AL 1450 DV

    Abstract: ixc 844 schematic diagram welding inverter STP5N80 845 diode DC/AC to DC smps circuit diagram schematic diagram dc-ac inverter schematic diagram dc-ac welding inverter CIRCUIT STP5N80FI RC50
    Text: _ • 7^2^237 00Mb2öl « V# _ BiSGTH S C S -T H O M S O N [*^ Q [E[L gTi»«S STP5N80 STP5N80FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE V STP5N80 S TP5N 80FI ■ . . . . ■ . dss 800 V 800 V RDS(on) Id < 2 0 < 2 n 5 .5 A


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    PDF STP5N80 STP5N80FI STP5N80 STP5N80FI 004b5B7 STP5N80/FI Schematics AL 1450 DV ixc 844 schematic diagram welding inverter 845 diode DC/AC to DC smps circuit diagram schematic diagram dc-ac inverter schematic diagram dc-ac welding inverter CIRCUIT RC50

    IRF151

    Abstract: No abstract text available
    Text: 3QE D £Ÿ 7 • 7=12^537 QQ3G1SÖ 7 ■ H " . -<3 SCS-THOMSON S G S-THOMSON ■[LH^MKgS “ IRF151 CHIP N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR IN DIE FORM DIE SIZE: 221 x221 mils METALLIZATION: Top Al Back A u /C r/N i/A u BACKSIDE THICKNESS: 6100 A


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    PDF IRF151 56x43 18x18 IRF151ECTRICAL

    irf720

    Abstract: diode ko 474
    Text: 7T2TE37 ÜOMSb?^ 752 • S G T H IRF720 IRF720FI SGS-THOMSON ULIKgTO«! N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE IRF720 IRF720FI ■ . ■ ■ « V dss R D S on Id 400 V 400 V < 1.8 £2 < 1 .8 0 4.2 A 3 A TYPICAL RDs(on) = 1.65 £2 AVALANCHE RUGGED TECHNOLOGY


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    PDF 00MSb71 IRF720 IRF720FI IRF720FI 400VDs 7T2TS37 IRF720/FI diode ko 474

    SGSP239

    Abstract: No abstract text available
    Text: 3QE » • 002^33 r z z SGS-THOMSON ^7# R5ilD g[E](s i[L[i ¥^©iö(gi 5 'T g s-thohso_n_ SGSP239 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE SGSP239 VDss 500 V ^ D S (o n ) 8.5 n 1.2 A • HIGH SPEED SWITCHING APPLICATIONS • ULTRA FAST SWITCHING


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    PDF SGSP239 OT-82 OT-194 Tjs1503Cxl JP239 SGSP239

    STV60N06

    Abstract: No abstract text available
    Text: r z 7 SGS-THOMSON Ä 7 # R!tlD S[ri ilLICTi iD©l STV60N06 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE V dss RDS(on Id STV60N06 60 V < 0.02 Û 60 A • TYPICAL R d s (o ii) = 0.017 £2 . AVALANCHE RUGGED TECHNOLOGY . 100% AVALANCHE TESTED . REPETITIVE AVALANCHE DATA AT 100°C


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    PDF STV60N06 GD73110 STV60N06

    hcf4047be

    Abstract: n13a hcf4047
    Text: rz r ^ 7 1 S G S -T H O M S O N c iia n e æ iiL iiC T M n e g H C C /H C F 4 0 4 7 B LOW-POWER MONOSTABLE/ASTABLE MULTIVIBRATOR . LOW POWER CONSUMPTION : SPECIAL COS/MOS OSCILLATOR CONFIGURATION . MONOSTABLE one-shot OR ASTABLE (freerunning) OPERATION . TRUE AND COMPLEMENTED BUFFERED


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    PDF 100nA 00bb374 HCC/HCF4047B PLCC20 71E1237 DGbb37S hcf4047be n13a hcf4047