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    MOSFET RF POWER Search Results

    MOSFET RF POWER Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation

    MOSFET RF POWER Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA Freescale Semiconductor, Inc. SEMICONDUCTOR TECHNICAL DATA Available at http://www.motorola.com/rf, Go to Tools RF Reference Design Library The RF MOSFET Line RF Power Field Effect Transistor MRF9045MR1 N–Channel Enhancement–Mode Lateral MOSFET


    Original     		PDF MRF9045MR1 RDMRF9045MR1

    MRF185

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MRF185/D SEMICONDUCTOR TECHNICAL DATA Advance Information MRF185 The RF MOSFET Line RF POWER Field-Effect Transistor 85 WATTS, 1.0 GHz 28 VOLTS LATERAL N–CHANNEL BROADBAND RF POWER MOSFET N–Channel Enhancement–Mode Lateral MOSFET


    Original     		PDF MRF185/D MRF185 MRF185/D* MRF185

    80 watt hf mosfet

    Abstract: MRF185
    Text: MOTOROLA Order this document by MRF185/D SEMICONDUCTOR TECHNICAL DATA Advance Information MRF185 The RF MOSFET Line RF POWER Field-Effect Transistor 85 WATTS, 1.0 GHz 28 VOLTS LATERAL N–CHANNEL BROADBAND RF POWER MOSFET N–Channel Enhancement–Mode Lateral MOSFET


    Original     		PDF MRF185/D MRF185 80 watt hf mosfet MRF185

    "RF MOSFET" 300W

    Abstract: IXZH16N60 1 RF s 640 a 931 IXZ316N60 MOSFET QG mosfet 300w rf power mosfet
    Text: IXZH16N60 Z-MOS RF Power MOSFET N-ChannelEnhancement NChannel EnhancementMode Mode Switch Mode RF MOSFET Qg and Rg Low Capacitance Z-MOSTM MOSFET Process Optimized High dv/dt for RF Operation Ideal Nanosecond for ClassSwitching C, D, & E Applications Symbol


    Original     		PDF IXZH16N60 IXZ316N60 dsIXZH16N60 "RF MOSFET" 300W IXZH16N60 1 RF s 640 a 931 MOSFET QG mosfet 300w rf power mosfet

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line N–Channel Enhancement–Mode Lateral MOSFET LAST SHIP 31JAN05 MRF185 RF POWER Field-Effect Transistor 85 WATTS, 1.0 GHz 28 VOLTS LATERAL N–CHANNEL BROADBAND RF POWER MOSFET • High Gain, Rugged Device


    Original     		PDF MRF185 31JUL04 31JAN05

    IXZR18N50

    Abstract: ixz318n50a
    Text: IXZR18N50 & IXZR18N50A/B Z-MOS RF Power MOSFET N-ChannelEnhancement NChannel EnhancementMode Mode Switch Mode RF MOSFET Low Capacitance Qg and Rg Z-MOSTM MOSFET Process Optimized High dv/dt for RF Operation Ideal Nanosecond for Class Switching C, D, & E Applications


    Original     		PDF IXZR18N50 IXZR18N50A/B IXZ318N50A/B dsIXZR18N50 IXZR18N50 ixz318n50a

    MRF173

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF173 RF Power Field Effect Transistor N–Channel Enhancement Mode MOSFET 80 W, 28 V, 175 MHz N–CHANNEL BROADBAND RF POWER MOSFET Designed for broadband commercial and military applications up to 200 MHz


    Original     		PDF MRF173 MRF173. AN721, MRF173

    J239

    Abstract: motorola J122 A113 MRF9002R2 RO4350 mosfet j133 motorola rf Power Transistor j122 mosfet J104 MOSFET J239 mosfet transistor
    Text: MOTOROLA Order this document by MRF9002R2/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line MRF9002R2 RF Power Field Effect Transistor Array N–Channel Enhancement–Mode Lateral MOSFET 1.0 GHz, 2 W, 26 V LATERAL N–CHANNEL BROADBAND RF POWER MOSFET


    Original     		PDF MRF9002R2/D MRF9002R2 J239 motorola J122 A113 MRF9002R2 RO4350 mosfet j133 motorola rf Power Transistor j122 mosfet J104 MOSFET J239 mosfet transistor

    1 RF s 640 a 931

    Abstract: "RF MOSFETs" transistor tl 187 IXYS IXZ316N60 mosfet 50V
    Text: IXZR16N60 & IXZR16N60A/B Z-MOS RF Power MOSFET N-ChannelEnhancement NChannel EnhancementMode Mode Switch Mode RF MOSFET Low Capacitance Qg and Rg Z-MOSTM MOSFET Process Optimized High dv/dt for RF Operation Ideal Nanosecond for Class Switching C, D, & E Applications


    Original     		PDF IXZR16N60 IXZR16N60A/B IXZ316N60 dsIXZR16N60 1 RF s 640 a 931 "RF MOSFETs" transistor tl 187 IXYS mosfet 50V

    motorola rf Power Transistor

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MRF9002R2/D SEMICONDUCTOR TECHNICAL DATA The RF Sub - Micron MOSFET Line MRF9002R2 RF Power Field Effect Transistor Array N - Channel Enhancement - Mode Lateral MOSFET 1.0 GHz, 2 W, 26 V LATERAL N - CHANNEL BROADBAND RF POWER MOSFET


    Original     		PDF MRF9002R2/D MRF9002R2 MRF9002R2 MRF9002R2/D motorola rf Power Transistor

    IXZ316N60

    Abstract: mosfet 50V
    Text: IXZ316N60 Z-MOS RF Power MOSFET N-Channel Enhancement Mode Switch Mode RF MOSFET Low Capacitance Z-MOSTM MOSFET Process Optimized for RF Operation Ideal for Class C, D, & E Applications Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 600 V


    Original     		PDF IXZ316N60 IXZ316N60 dsIXZ316N60 mosfet 50V

    IXZ308N120

    Abstract: ixzh ixzh08n120
    Text: IXZH08N120 Z-MOS RF Power MOSFET N-Channel Enhancement Mode Switch Mode RF MOSFET Low Capacitance Z-MOSTM MOSFET Process Optimized for RF Operation Ideal for Class C, D, & E Applications Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1200


    Original     		PDF IXZH08N120 IXZ308N120 dsIXZH08N120 ixzh ixzh08n120

    motorola sps transistor

    Abstract: MRF21010
    Text: MOTOROLA Freescale Semiconductor, Inc. SEMICONDUCTOR TECHNICAL DATA Available at: http://www.motorola.com/rf/ Tools RF Reference Design Library The RF MOSFET Line MRF21010 RF Power Field Effect Transistor N–Channel Enhancement–Mode Lateral MOSFET DEVICE CHARACTERISTICS From Device Data Sheet


    Original     		PDF MRF21010 RDMRF21010NCDMA motorola sps transistor MRF21010

    IXZ318N50

    Abstract: No abstract text available
    Text: IXZ318N50 Z-MOS RF Power MOSFET N-Channel Enhancement Mode Switch Mode RF MOSFET Low Capacitance Z-MOSTM MOSFET Process Optimized for RF Operation Ideal for Class C, D, & E Applications Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 500 V


    Original     		PDF IXZ318N50 IXZ318N50 dsIXZ318N50

    ixzr08n120a

    Abstract: No abstract text available
    Text: IXZR08N120 & IXZR08N120A/B Z-MOS RF Power MOSFET N-Channel Enhancement Mode Switch Mode RF MOSFET Low Capacitance Z-MOSTM MOSFET Process Optimized for RF Operation Ideal for Class C, D, & E Applications VDSS = 1200 V ID25 = 8.0 A Symbol Test Conditions RDS on


    Original     		PDF IXZR08N120 IXZR08N120A/B dsIXZR08N120A/B ixzr08n120a

    MRF185

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MRF185/D The RF MOSFET Line N–Channel Enhancement–Mode Lateral MOSFET LAST SHIP 31JAN05 MRF185 RF POWER Field-Effect Transistor 85 WATTS, 1.0 GHz 28 VOLTS LATERAL N–CHANNEL BROADBAND RF POWER MOSFET • High Gain, Rugged Device


    Original     		PDF MRF185/D 31JAN05 MRF185 MRF185

    capacitor 0805 avx

    Abstract: 08055C103KATDA J940 08053G105ZATEA Bipolar NPN Transistor sot23 MRF21010
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistor MRF21010 N–Channel Enhancement–Mode Lateral MOSFET 2170 MHz, 10 W, 28 V LATERAL N–CHANNEL BROADBAND RF POWER MOSFET Designed for W–CDMA base station applications at frequencies from 2110 to


    Original     		PDF MRF21010 MRF21010 capacitor 0805 avx 08055C103KATDA J940 08053G105ZATEA Bipolar NPN Transistor sot23

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MRF185/D The RF MOSFET Line N–Channel Enhancement–Mode Lateral MOSFET LAST SHIP 31JAN05 MRF185 RF POWER Field-Effect Transistor 85 WATTS, 1.0 GHz 28 VOLTS LATERAL N–CHANNEL BROADBAND RF POWER MOSFET • High Gain, Rugged Device


    Original     		PDF MRF185/D MRF185 DEVICEMRF185/D

    ixzr18n50

    Abstract: No abstract text available
    Text: IXZR18N50 & IXZR18N50A/B Z-MOS RF Power MOSFET N-Channel Enhancement Mode Switch Mode RF MOSFET Low Capacitance Z-MOSTM MOSFET Process Optimized for RF Operation Ideal for Class C, D, & E Applications VDSS = 500 V ID25 = 19 A Symbol Test Conditions RDS on


    Original     		PDF IXZR18N50 IXZR18N50A/B dsIXZR18N50 ixzr18n50

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Advance Information MRF185 The RF MOSFET Line RF POWER F ield -E ffect Transistor 85 WATTS, 1.0 GHz 28 VOLTS LATERAL N-CHANNEL BROADBAND RF POWER MOSFET N-Channel Enhancement-Mode Lateral MOSFET High Gain, Rugged Device


    OCR Scan     		PDF MRF185 MRF185

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Advance Information MRF185 The RF MOSFET Line RF POWER F ield -E ffect Transistor 85 WATTS, 1.0 GHz 28 VOLTS LATERAL N-CHANNEL BROADBAND RF POWER MOSFET N-Channel Enhancement-Mode Lateral MOSFET High Gain, Rugged Device


    OCR Scan     		PDF MRF185 MRF185

    J115 mosfet

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF177 RF Power Field Effect Transistors N-Channel Enhancement Mode MOSFET 100 W, 28 V, 400 MHz N-CHANNEL BROADBAND RF POWER MOSFET Designed for broadband commercial and military applications up to 400 MHz


    OCR Scan     		PDF 10pFD 50Vdc 1N5347B, RF177 J115 mosfet

    J945

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field E ffect Transistors MRF177 N-Channel Enhancement Mode MOSFET 100 W, 28 V, 400 MHz N-CHANNEL BROADBAND RF POWER MOSFET Designed for broadband commercial and military applications up to 400 MHz


    OCR Scan     		PDF MarketinC14 10nFD 50Vdc 1N5347B 20Vdc RF177 J945

    RF MOSFETs

    Abstract: motorola bipolar transistor data manual application MOSFET transmitters fm amplifier RF CLASS B FET MOSFET
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF173 RF Power Field E ffect Transistor N-Channel Enhancement Mode MOSFET 80 W, 28 V, 175 MHz N-CHANNEL BROADBAND RF POWER MOSFET Designed for broadband commercial and military applications up to 200 MHz


    OCR Scan     		PDF MRF173. AN721, MRF173 RF MOSFETs motorola bipolar transistor data manual application MOSFET transmitters fm amplifier RF CLASS B FET MOSFET