Spice Model for TMOS Power MOSFETs
Abstract: scr spice model n mosfet depletion pspice model parameters transistor SMD making code 3f MOTOROLA smd SCR 707n AN1043 1E12 ABM11 BUZ103S
Text: A Hierarchical Cross-Platform Physics Based MOSFET Model for SPICE and SABER By Jon Mark Hancock Siemens Microelectronics ABSTRACT A physics based MOSFET subcircuit model has been developed and implemented for SABER and several SPICE platforms, including PSPICE, IS-SPICE, and S-SPICE. The model is hierarchical in
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SIPMOS
Abstract: siemens igbt profet igbt types SIPMOS SPICE SPICE MODELS models spice simulation Semiconductor Group igbt mosfet
Text: Simulation Models for SIPMOS Components The SIEMENS Power Semiconductor Group provides SPICE models for many MOSFET and IGBT types. Please refer to the README.TXT-file in the /LHDATAdirectory on the CD-ROM. Additional models SPICE, SABER for MOSFET, PROFET, will be available by the
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IRF130
Abstract: jfet jfet cascode intersil jfet AN8610 ronan intersil JFET TO 18 IRFl30 JFET application note
Text: Spicing-Up Spice II Software For Power MOSFET Modeling Application Note The SPICE II simulation software package is familiar to most designers working in computer-aided design of integrated circuits. Developed by L. W. Nagel in 1973, SPICE II has become a widely available, well-understood design tool for
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Abstract: No abstract text available
Text: SPICE Device Model SiHP8N50D www.vishay.com Vishay Siliconix D Series Power MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the
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SiHP8N50D
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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1910 0016 diode
Abstract: sir412dp
Text: SPICE Device Model SiR412DP Vishay Siliconix N-Channel 25 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the
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SiR412DP
18-Jul-08
1910 0016 diode
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SiR422DP
Abstract: No abstract text available
Text: SPICE Device Model SiR422DP Vishay Siliconix N-Channel 40 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the
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SiR422DP
18-Jul-08
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sir418dp
Abstract: No abstract text available
Text: SPICE Device Model SiR418DP Vishay Siliconix N-Channel 40 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the
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SiR418DP
18-Jul-08
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Untitled
Abstract: No abstract text available
Text: SPICE Device Model SiHG47N60E www.vishay.com Vishay Siliconix E Series Power MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C
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SiHG47N60E
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Untitled
Abstract: No abstract text available
Text: SPICE Device Model SiR408DP Vishay Siliconix N-Channel 25 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the
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SiR408DP
18-Jul-08
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Si2367DS
Abstract: No abstract text available
Text: SPICE Device Model Si2367DS Vishay Siliconix P-Channel 20 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the p-channel vertical DMOS. The subcircuit model is extracted and optimized over the
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Si2367DS
18-Jul-08
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Si5471DC
Abstract: No abstract text available
Text: SPICE Device Model Si5471DC Vishay Siliconix P-Channel 20-V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the p-channel vertical DMOS. The subcircuit model is extracted and optimized over the
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Si5471DC
18-Jul-08
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sir426
Abstract: SiR426DP diode 1776 B
Text: SPICE Device Model SiR426DP Vishay Siliconix N-Channel 40 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the
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SiR426DP
18-Jul-08
sir426
diode 1776 B
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SI2305CDS
Abstract: SI2305 44A16
Text: SPICE Device Model Si2305CDS Vishay Siliconix P-Channel 8 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the p-channel vertical DMOS. The subcircuit model is extracted and optimized over the
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Si2305CDS
18-Jul-08
SI2305
44A16
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Abstract: No abstract text available
Text: SPICE Device Model Si5458DU Vishay Siliconix N-Channel 30-V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the
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Si5458DU
18-Jul-08
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Si7288DP
Abstract: s091 SI7288
Text: SPICE Device Model Si7288DP Vishay Siliconix N-Channel 40 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the
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Si7288DP
18-Jul-08
s091
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SIR172DP
Abstract: No abstract text available
Text: SPICE Device Model SiR172DP Vishay Siliconix N-Channel 30 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the
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SiR172DP
18-Jul-08
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Untitled
Abstract: No abstract text available
Text: SPICE Device Model SiR820DP Vishay Siliconix N-Channel 30 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the
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SiR820DP
11-Mar-11
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Untitled
Abstract: No abstract text available
Text: SPICE Device Model SiHP17N60D www.vishay.com Vishay Siliconix D Series Power MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C
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SiHP17N60D
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Si7625DN
Abstract: mosfet 4430 si7625 S10-2503
Text: SPICE Device Model Si7625DN Vishay Siliconix P-Channel 30 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the p-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C
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Si7625DN
S10-2503-Rev.
01-Nov-10
mosfet 4430
si7625
S10-2503
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s1124
Abstract: No abstract text available
Text: SPICE Device Model Si5999EDU www.vishay.com Vishay Siliconix Dual P-Channel 20 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached spice model describes the typical electrical characteristics of the p-channel vertical DMOS. The subcircuit model is extracted and optimized over the
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Si5999EDU
11-Mar-11
s1124
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mosfet 2891
Abstract: No abstract text available
Text: SPICE Device Model Si8499DB Vishay Siliconix P-Channel 20 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the p-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C
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Si8499DB
18-Jul-08
mosfet 2891
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si7997
Abstract: No abstract text available
Text: SPICE Device Model Si7997DP Vishay Siliconix P-Channel 30 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the p-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C
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Si7997DP
18-Jul-08
si7997
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S10-1617
Abstract: No abstract text available
Text: SPICE Device Model Si4004DY Vishay Siliconix N-Channel 20 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C
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Si4004DY
18-Jul-08
S10-1617
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Untitled
Abstract: No abstract text available
Text: SPICE Device Model Si7629DN Vishay Siliconix P-Channel 20 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the p-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C
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