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    MTM10N Search Results

    MTM10N Datasheets (62)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    MTM10N05 Motorola European Master Selection Guide 1986 Scan PDF
    MTM10N05 Unknown Shortform Datasheet & Cross References Data Short Form PDF
    MTM10N05 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    MTM10N05 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    MTM10N05 Unknown FET Data Book Scan PDF
    MTM10N06 Motorola European Master Selection Guide 1986 Scan PDF
    MTM10N06 Unknown Shortform Datasheet & Cross References Data Short Form PDF
    MTM10N06 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    MTM10N06 Unknown FET Data Book Scan PDF
    MTM10N06E Motorola TMOS IV / Power Field Effect Transistors Scan PDF
    MTM10N06E Unknown Shortform Datasheet & Cross References Data Short Form PDF
    MTM10N06E Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    MTM10N06E Unknown FET Data Book Scan PDF
    MTM10N06E On Semiconductor TMOS IV Power Field Effect Transistor N-Channel Enhancement Mode Silicon Gate Scan PDF
    MTM10N08 Motorola European Master Selection Guide 1986 Scan PDF
    MTM10N08 Unknown Shortform Datasheet & Cross References Data Short Form PDF
    MTM10N08 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    MTM10N08 Unknown FET Data Book Scan PDF
    MTM10N08 Siliconix MOSPOWER Design Data Book 1983 Scan PDF
    MTM10N10 Motorola European Master Selection Guide 1986 Scan PDF

    MTM10N Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: PRODUCT SPECIFICATIONS SEMICONDUCTOR TECHNOLOGY, INC. 3131 S. E. JAY STREET, STUART, FL 34997 PH: 561 283-4500 FAX: (561) 286-8914 Website: http://www.semi-tech-inc.com CASE OUTLINE: TYPE: MTM10N25 TO-204AA (TO-3) HIGH VOLTAGE POWER MOSFET N-CHANNEL ABSOLUTE MAXIMUM RATING:


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    O-204AA MTM10N25 PDF

    diode 1000V 10a

    Abstract: No abstract text available
    Text: PRODUCT SPECIFICATIONS SEMICONDUCTOR TECHNOLOGY, INC. 3131 S. E. JAY STREET, STUART, FL 34997 PH: 561 283-4500 FAX: (561) 286-8914 Website: http://www.semi-tech-inc.com CASE OUTLINE: TYPE: MTM10N100E TO-204AA (TO-3) HIGH VOLTAGE POWER MOSFET N-CHANNEL ABSOLUTE MAXIMUM RATING:


    Original
    O-204AA MTM10N100E diode 1000V 10a PDF

    sn76131

    Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
    Text: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157


    Original
    2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 sn76131 tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B PDF

    half bridge TL494

    Abstract: sine wave inverter tl494 circuit diagram UC3842 smps design with TL431 EI - 33c TRANSFORMER iw 1688 philips surface mount zener diode v6 smps lead acid battery charger schematic tl494 lm324 dc to ac inverters 2N3055 TRANSISTOR smps with uc3842 and tl431
    Text: HB206/D Rev. 4, Feb-2002 Linear & Switching Voltage Regulator Handbook ON Semiconductor ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC SCILLC . SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does


    Original
    HB206/D Feb-2002 r14525 half bridge TL494 sine wave inverter tl494 circuit diagram UC3842 smps design with TL431 EI - 33c TRANSFORMER iw 1688 philips surface mount zener diode v6 smps lead acid battery charger schematic tl494 lm324 dc to ac inverters 2N3055 TRANSISTOR smps with uc3842 and tl431 PDF

    MTM20N08

    Abstract: MTM35N06 IRF141 IRF143 MTM10N06 MTM55N10 MTM35N05 MTM60N05 IRF150 MTM10N08
    Text: POWER TRANSISTORS — TMOS METAL continued Metal TMOS Power MOSFETs — TO-204AA (continued) CASE 1-04 and CASE 1-05 @ ID VBR(DSS) (Volts) Min (Ohms) Max (Amp) 100 0.055 20 0.04 27.5 0.5 4 80 rDS(on) Device 0.4 40 150 55 250 MTM8N08 8 75 0.33 5 MTM10N08


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    O-204AA IRF150* MTM55N10 MTM8N08 MTM8P08* MTM10N08 MTM12P08* MTM12N08 MTM20N08 MTM25N08Â MTM35N06 IRF141 IRF143 MTM10N06 MTM55N10 MTM35N05 MTM60N05 IRF150 PDF

    DJ05AH

    Abstract: TMOS power FET MTM10N25 Zener diode wz 210 MTP10N25 ITP10N Nippon capacitors
    Text: Order this document by MTM10N25/D MTM10N25 MTP10N25 Designer’s Data Sheet 10 AM PERE N-CHANNEL TM O S POWER FET N -C H A N N E L E N H A N C E M E N T M O D E S IL IC O N G A T E T M O S P O W E R FIE LD EF F E C T T R A N S IS T O R rD S o n = 0.45 O H M


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    MTM10N25/D MTM10N25 MTP10N25 MTM10N25/D DJ05AH TMOS power FET Zener diode wz 210 MTP10N25 ITP10N Nippon capacitors PDF

    MTP10N06E

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MTM10N06E MTP10N06E Designer's Data Sheet T M O S IV P o w er Field E ffe c t Transistors N-Channel Enhancement-Mode Silicon Gate TMOS POWER FETs 10 AMPERES This advanced " E " series o f TM OS p o w e r MOSFETs is desig n ed to w ith s ta n d high


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    MTM10N06E MTP10N06E MTM/MTP10N06E MTP10N06E PDF

    MTM20N08

    Abstract: MTP2P45 MTM35N05 IRF123 IRF150 MTM10N08 MTM12N08 MTM12P08 MTM25N08 MTM55N08
    Text: POWER TRANSISTORS — TMOS METAL continued Metal TMOS Power MOSFETs — TO-204AA (continued) CASE 1-04 and CASE 1-05 rDS(on) @ ID VBR(DSS) (Volts) Min (Ohms) Max (Amp) 100 0.055 20 0.04 27.5 0.5 4 80 Device 0.4 40 150 55 250 MTM8N08 8 75 0.33 5 MTM10N08


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    O-204AA IRF150* MTM55N10 MTM8N08 MTM8P08* MTM10N08 MTM12P08* MTM12N08 MTM20N08 MTM25N08Â MTP2P45 MTM35N05 IRF123 IRF150 MTM12N08 MTM12P08 MTM25N08 MTM55N08 PDF

    MTP10N06E

    Abstract: 221A-04 72SM AN569 MTM10N06E evod
    Text: IM E D I MOTOROLA SC X ST R S /R F MOTOROLA • I b3t,72SM 00^0033 T | 7 3 3 7 - a SEMICONDUCTOR TECHNICAL DATA MTM10N06E MTP10N06E Designer's Data Sheet TM OS IV Pow er Field Effect Transistors N-Channel Enhancement-Mode Silicon Gate T M O S PO W ER F ET s


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    0Cn0G33 MTM10N06E 221A04 MTP10N06E MTP10N06E 221A-04 72SM AN569 MTM10N06E evod PDF

    MTP3055A

    Abstract: MTM12N06 mtp25n06 MTM20N08 irf150 MTH8P20 MTM35N05 MTP2P45 MTM10N05 BUZ11
    Text: POWER TRANSISTORS — TMOS METAL continued Metal TMOS Power MOSFETs — TO-204AA (continued) CASE 1-04 and CASE 1-05 @ ID VBR(DSS) (Volts) Min (Ohms) Max (Amp) 100 0.055 20 0.04 27.5 0.5 4 80 rDS(on) Device 0.4 40 150 55 250 MTM8N08 8 75 0.33 5 MTM10N08


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    O-204AA IRF150* MTM55N10 MTM8N08 MTM8P08* MTM10N08 MTM12P08* MTM12N08 MTM20N08 MTM25N08Â MTP3055A MTM12N06 mtp25n06 irf150 MTH8P20 MTM35N05 MTP2P45 MTM10N05 BUZ11 PDF

    MTM10N06E

    Abstract: 2N3904 AN569 MTP10N06E
    Text: Order this data sheet by MTM10N06E/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA Designer's Data Sheet TMOS IV Power Field E ffect Transistors N-Channel Enhancem ent Mode Silicon Gate TMOS POWER FETs 10 AMPERES This advanced "E" series of T M O S power MOSFETs is designed to withstand high


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    MTM10N06E/D MTM10N06E/D MTM10N06E 2N3904 AN569 MTP10N06E PDF

    DJ05AH

    Abstract: MTM10N25 MTP10N25 MTM10N OSS260 300 volt 5 ampere mosfet transistor c180 o
    Text: MTM10N25 M O TO R O LA D e s i g n e r * » D u l a MTP10N25 S h c *c *t 10 A M P E R E N -C H A N N E L T M O S P O W E R N C H A N N E L E N H A N C E M E N T M O D E S IL IC O N G A T E T M O S P O W E R F IE L D E F F E C T T R A N S IS T O R '0 * o « 0


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    MTM10N25 MTP10N25 10CTC C-181 DJ05AH MTP10N25 MTM10N OSS260 300 volt 5 ampere mosfet transistor c180 o PDF

    motorola an569 thermal

    Abstract: diode zener motorola MTM10N100E 2N3904 AN569 AN569 in Motorola Power Applications
    Text: Order this data sheet by MTM10N100E/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA Designer's Data Sheet TMOS E-FET High Energy Power FET TMOS POWER FET 10 AMPERES rDS on = 1-2 OHMS 1000 VOLTS N-Ctiannel Enhancem ent-Mode Silicon Gate This advanced high voltage TMOS E-FET is designed to with­


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    MTM10N1OOE/D MTM10N100E/D MTM10N100E/D motorola an569 thermal diode zener motorola MTM10N100E 2N3904 AN569 AN569 in Motorola Power Applications PDF

    10N25

    Abstract: No abstract text available
    Text: MOTOROLA SC 14E D X S T R S /R F b 3 b 7 a s 4 0 010 04 4 4 1 r - 3 Ÿ - / 3 MOTOROLA • SEMICONDUCTOR TECHNICAL DATA MTM10N25 MTP10N25 Designer's Data Sheet Pow er Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate TM OS TMOS POWER FETs 10 AMPERES


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    MTM10N25 MTP10N25 0J570 19XACE 30i0012 TQ-204AA 21A-04 O-220AB 10N25 PDF

    triac zd 607

    Abstract: 1n5204 CA2820 TRW 2N4427 equivalent bfr91 2N6823 842 317 SO8 BD243 PINOUT BD529 bf506 BF845
    Text: MASTER SELECTION GUIDE EUROPEAN SUPPLEMENT This is the European supplement to the USA edition of the Master Selection Guide, SG73/D REV 3. It should be read along with the USA edition. The supplement carries amendments to sections 1 and 5 in the USA edition.


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    SG73/D triac zd 607 1n5204 CA2820 TRW 2N4427 equivalent bfr91 2N6823 842 317 SO8 BD243 PINOUT BD529 bf506 BF845 PDF

    EATON CM20A

    Abstract: A5 GNE mosfet Hall sensor 44e 402 2N8491 FTG 1087 S TRIAC BCR 10km FEB3T smd transistor marking 352a sharp EIA 577 sharp color tv schematic diagram MP-130 M mh-ce 10268
    Text: Table of Contents N E W A R K E L E C T R O N IC S “Where serving you begins even before you call” Newark Electronics is a UNIQUE broadline distributor of electronic components, dedicated to provid­ ing complete service, fast delivery and in-depth inventory. Our main


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    PDF

    MFE9200

    Abstract: BUZ84A BUZ90 equivalent IRF150 MOSFET AMP circuit BUZ35S MTP40N06M IRFZ22 mosfet 1RF620 MTM12N10L MTP25N10E
    Text: MOTOROLA SC XSTRS/R IM E F D | b3b?254 O O fl'ìB n 1 | Selection by Package by contacting a Motorola sale office In your area or by con­ tacting a Motorola Literature Distribution Center listed on the back cover. Order the disk by requesting DK101/D. The product listed in Tables t through 22 have been com­


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    DK101/D. O-22QI 0020-H MFE9200 BUZ84A BUZ90 equivalent IRF150 MOSFET AMP circuit BUZ35S MTP40N06M IRFZ22 mosfet 1RF620 MTM12N10L MTP25N10E PDF

    TP10N15L

    Abstract: 10N12L 10N15L TO-220AB Package P10N15L TP10N12L TP10N12 158SC
    Text: MOTOROLA SC IME D XSTRS/R F I fc.3 t,?a54 QG1 QD3 ci 0 1 7V 3 7 -1 / MOTOROLA • SEM ICO NDUCTOR TECHNICAL DATA M TM 10N 12L M TM 10N 15L MTP10IM12L M T P 10N 15L Designer's Data Sheet Pow er Field Effect Transistors N-Channel Enhancement-Mode Silicon Gate TMOS


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    1X440 TQ-204AA 21A-04 O-220AB TP10N15L 10N12L 10N15L TO-220AB Package P10N15L TP10N12L TP10N12 158SC PDF

    MTM6N60

    Abstract: MTM6N85 MTM7N12 MTM7N20 MTM7N45 MTM8N08 MTM8N12
    Text: - 283 f §Ü g tt Vds or % Vg s V Iq s s Pd Id Id s s Vg s (V) (*) (A) th) M 4# ft D s (on) Vd s = '14 ( T a = 2 5 iC ) Io(on) g fs Ciss Coss Crss VG S =0 Vg s * /CH * /CH Vd g * (Ta= 25'C) ma x min CnA) Vg s (V) Vd s (V) Cm a) (V) (max) Id (mA) (V) ♦typ


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    MTM6N60 O-204AA MTM6N85 M6N90 MTM7N12 MTM10 MTM7N20 MTM7N45 MTM8N08 MTM8N12 PDF

    1RFZ40

    Abstract: 1RF150 MTP25N10E mth7n50 Transistor MTP35N06E BUZ80a equivalent buz90 equivalent MTP40N06M MFE9200 MTH7N50
    Text: MOTOROLA SC X S T R S /R IME D | F b3b?2S4 Q O fl' iB n 1 | J l 9 / - 6 0 Selection by Package The product listed in Tables t through 22 have been com­ piled on an IBM or compatible personal computer disk for quick selection of product. This versatile disk may be obtained


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    DK101/D. 0020-frJ 1RFZ40 1RF150 MTP25N10E mth7n50 Transistor MTP35N06E BUZ80a equivalent buz90 equivalent MTP40N06M MFE9200 MTH7N50 PDF

    20N15

    Abstract: 35n05 mje13002 to92 ur3060 AN803 motorola 2N6823 isolated dc-dc mc34063 mje12007 Motorola Switchmode 1 special
    Text: C O N TE N TS Page What Everyone Should Know About Switching Power Supplies In tro du ctio n. Comparison w ith Linear Regulations.


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    PDF

    IRFD1Z3 equivalent

    Abstract: 8N60 equivalent TP8N20 TP8N10 siemens semiconductor manual What is comparable with IRF 3205 2N6823 irf8408 MTM5N90 designers datasheet smps cook circuit
    Text: The information in this book has been carefully checked and is believed to be accurate; however, no responsibility is assumed for inaccuracies. Motorola reserves the right to make changes with­ out further notice to any products herein to improve reliability, function or design. Motorola does not


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    VP1204N TP8P08 5001D VP1206N 1208N 5002D 1209N VP1209N IRFD1Z3 equivalent 8N60 equivalent TP8N20 TP8N10 siemens semiconductor manual What is comparable with IRF 3205 2N6823 irf8408 MTM5N90 designers datasheet smps cook circuit PDF

    10N15L

    Abstract: 10N12L mtp10n12 MTM10N15L p10n15l
    Text: MOTOROLA • i SEM ICO NDUCTOR TECHNICAL DATA M TM 10N 12L M TM 10N 15L M T P 10N 12L M T P 10N 15L Designer's Data Sheet P o w er Field E ffe c t Transistors N-Channel Enhancem ent-M ode Silicon G ate TM O S T h e s e L o g ic L e ve l T M O S P o w e r FETs a re d e s ig n e d fo r h ig h


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    21A-04 O-220AB 10N15L 10N12L mtp10n12 MTM10N15L p10n15l PDF

    MTM12N20

    Abstract: MTM15N40 MTM12N06 MTM12N08 MTM12N10 MTM12N18 MTM12P05 MTM12P08 M1M1 MTM20N08
    Text: - 284 - f m £ 4t £ ÏS JK % £ tè Ta=25tï ï Vd s or ? Vd g )]/ (V) Vg s Pd Id * / CH (V) (A) I gss V g s th) I dss * /CH (H O min (nA) Vg s (V) Vd s (V) (m a ) max )d (piA) (V) (V) % W t± fè FD s(o n ,i Vi)S= Vg s (Ta=25tD) Ip(on) Ciss g fs Coss Crss


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    MTM10NI5 O-204AA MTM10H15L T0-204AA mtm10n25 mtm12n05 O-204AE MTM15N40E MTM12N20 MTM15N40 MTM12N06 MTM12N08 MTM12N10 MTM12N18 MTM12P05 MTM12P08 M1M1 MTM20N08 PDF