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Rochester Electronics LLC ISL9N312AD3 N-CHANNEL POWER MOSFET
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	ISL9N312AD3	Bulk			1,025	1 - 10 - 100 - 1000 - 10000 $0.29	Buy Now
Rochester Electronics LLC ISL9N312AD3ST N-CHANNEL POWER MOSFET
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	ISL9N312AD3ST	Bulk			1,025	1 - 10 - 100 - 1000 - 10000 $0.29	Buy Now
Sullins Connector Solutions NPPN312AFCN-RC CONN HDR 62POS 0.079 GOLD PCB
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	NPPN312AFCN-RC	Tube			1,000	1 - 10 - 100 - 1000 $1.9929 10000 $1.9929	Buy Now
Siemens 3VA61405HN312AA0 BRKR 3VA61 3P 40A 35KA ETU3-LSI
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	3VA61405HN312AA0	Box			1	1 $1483.51 10 $1483.51 100 $1483.51 1000 $1483.51 10000 $1483.51	Buy Now
Mouser Electronics	3VA61405HN312AA0					1 $1483.51 10 $1483.51 100 $1483.51 1000 $1483.51 10000 $1483.51	Get Quote
Siemens 3VA62105HN312AA0 BRKR 3VA62 3P 100A 35KA ETU3-LSI
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	3VA62105HN312AA0	Box			1	1 $2657.53 10 $2657.53 100 $2657.53 1000 $2657.53 10000 $2657.53	Buy Now
Mouser Electronics	3VA62105HN312AA0					1 $2657.52 10 $2657.52 100 $2657.52 1000 $2657.52 10000 $2657.52	Get Quote

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N312A Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
AN9321 Abstract: AN9322 ISL9N312ASK8T MS-012AA TB334 N312AS Text: N312ASK8T Data Sheet January 2002 30V, 0.012 Ohm, 11A, N-Channel Logic Level UltraFET Trench Power MOSFETs This device employs a new advanced trench MOSFET technology and features low gate charge while maintaining low on-resistance. PWM Optimized Features	Original	ISL9N312ASK8T ISL9N312ASK8 MS-012AA AN9321 AN9322 ISL9N312ASK8T MS-012AA TB334 N312AS	PDF
n312ad Abstract: No abstract text available Text: PWM Optimized N312AD3ST/ N312AD3 N-Channel Logic Level UltraFET Trench Power MOSFETs 30V, 50A, 12mΩ General Description Features This device employs a new advanced trench MOSFET technology and features low gate charge while maintaining low on-resistance.	Original	ISL9N312AD3ST/ ISL9N312AD3 1450pF O-252 O-252) O-251AA) n312ad	PDF
n312ad Abstract: TO-252AA Package N312A Text: N312AD3ST N-Channel Logic Level PWM Optimized UltraFET Trench Power MOSFETs General Description Features This device employs a new advanced trench MOSFET technology and features low gate charge while maintaining low on-resistance. • Fast switching	Original	ISL9N312AD3ST 1450pF O-252 n312ad TO-252AA Package N312A	PDF
n312ad Abstract: ISL9N312AD3ST 25E5 tube ISL9N312AD3 11A ABS Text: N312AD3 / N312AD3ST N-Channel Logic Level PWM Optimized UltraFET Trench Power MOSFETs General Description Features This device employs a new advanced trench MOSFET technology and features low gate charge while maintaining low on-resistance. • Fast switching	Original	ISL9N312AD3 ISL9N312AD3ST 1450pF O-251AA) O-252 O-252) n312ad ISL9N312AD3ST 25E5 tube 11A ABS	PDF
n312ad Abstract: 69E-10 Text: N312AD3ST N-Channel Logic Level PWM Optimized UltraFET Trench Power MOSFETs General Description Features This device employs a new advanced trench MOSFET technology and features low gate charge while maintaining low on-resistance. • Fast switching	Original	ISL9N312AD3ST 1450pF O-252 n312ad 69E-10	PDF
N312AS Abstract: N312AP n312* transistor ISL9N312AP3 ISL9N312AS3ST Text: N312AP3/N312AS3ST N-Channel Logic Level PWM Optimized UltraFET Trench Power MOSFETs General Description Features This device employs a new advanced trench MOSFET technology and features low gate charge while maintaining low on-resistance. • Fast switching	Original	ISL9N312AP3/ISL9N312AS3ST 1450pF O-263AB O-220AB N312AS N312AP n312* transistor ISL9N312AP3 ISL9N312AS3ST	PDF
N312AP Abstract: N312AS N312A ISL9N312AP3 ISL9N312AS3ST Text: N312AP3/N312AS3ST N-Channel Logic Level PWM Optimized UltraFET Trench Power MOSFETs General Description Features This device employs a new advanced trench MOSFET technology and features low gate charge while maintaining low on-resistance. • Fast switching	Original	ISL9N312AP3/ISL9N312AS3ST 1450pF O-263AB O-220AB N312AP N312AS N312A ISL9N312AP3 ISL9N312AS3ST	PDF
N312A Abstract: AN9321 ISL9N312ASK8T MS-012AA TB334 Text: N312ASK8T Data Sheet 30V, 0.012 Ohm, 11A, N-Channel Logic Level UltraFET Trench Power MOSFETs March 2001 File Number 5034 PWM Optimized [ /Title This device employs a new advanced trench MOSFET ISL9 technology and features low gate charge while maintaining	Original	ISL9N312ASK8T N312A ISL9N312ASK8 AN9321 ISL9N312ASK8T MS-012AA TB334	PDF
u574 Abstract: IC BL 176A IF cable 8D-FB COAXIAL CABLE 5D-2V b11g 105j 250v 2DLF MQ 303A B177D B176D Text: •W CONTEf S in c e 1978 s 1 Reg. No. Q8718 ISO -9001: 2000 - BT" É ? Jk 100MHz 300MHz * 400MHz P3 ~ P4 800MHz N ANTENNA 1 1» P6 144/430MHZ P7 ~ P10 TWO BAND P11 ~ P12 MIC ECHO AMP P13 I EARPHONE MIC P13 ANTENNA B A S E TRANSCEIVER A C C ESSO R IES P15 ~ P16	OCR Scan	Q8718 ISO-9001: 100MHz 300MHz 400MHz 800MHz 144/430MHZ u574 IC BL 176A IF cable 8D-FB COAXIAL CABLE 5D-2V b11g 105j 250v 2DLF MQ 303A B177D B176D	PDF
1HT251 Abstract: 2T203 kt117 1T308 2T355A 2T312 IT308B K1HT251 kt117b 2T313 Text: WmmËÊÊm W h A iW f W * i rïS >••> ro s ît. ;<W«a 7 mm m$m 15ÎÏ3 Sktófefc?¿feS 11181 immm SI f ' ■ ' ' ' : m S ËÊB B S M M CnPABOHHMK nonynpoBQQHHKOBbiE nPHBOPbl TPAH3MCTOPbl MAflOI/ì MOLUHOCTM n O f l PEA A K L4H EPÌ A . B rO flO M E A O B A	OCR Scan	FojO33 KT357 KT358 KT361 KT363 KT364-2 KT366 KT368 KT369 KT369-1 1HT251 2T203 kt117 1T308 2T355A 2T312 IT308B K1HT251 kt117b 2T313	PDF
N317 Abstract: n334 N-338 N-P-59U N333A coaxial 5D-2V N326 N306A N327 n329a Text: -Gfo, N CONNECTORS S in c e 1 9 7 8 ORDERING INFORMATION t N-301A-B S G T INSULATION D DELRIN T TEFLON P PLASTIC PB PBT POLYESTER PH PHENOLIC CONTACT PLATING C CHROME G GOLD N NICKEL S SILVER BODY PLATING C CHROME G GOLD N NICKEL -* S SILVER BODY MATERIAL	OCR Scan	N-301A-B N-301 N-313 N-325 N-337 N-302 N-314 N-326 N-338 N-303 N317 n334 N-P-59U N333A coaxial 5D-2V N326 N306A N327 n329a	PDF