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    N312AS Price and Stock

    Rochester Electronics LLC ISL9N312AS3ST

    N-CHANNEL POWER MOSFET
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    DigiKey ISL9N312AS3ST Bulk 346
    • 1 -
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    • 1000 $0.87
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    Fairchild Semiconductor Corporation ISL9N312AS3ST

    58A, 30V, 0.012ohm, N-Channel Power MOSFET, TO-263AB '
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Rochester Electronics ISL9N312AS3ST 40,622 1
    • 1 $0.8342
    • 10 $0.8342
    • 100 $0.7841
    • 1000 $0.7091
    • 10000 $0.7091
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    N312AS Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    AN9321

    Abstract: AN9322 ISL9N312ASK8T MS-012AA TB334 N312AS
    Text: N312ASK8T Data Sheet January 2002 30V, 0.012 Ohm, 11A, N-Channel Logic Level UltraFET Trench Power MOSFETs This device employs a new advanced trench MOSFET technology and features low gate charge while maintaining low on-resistance. PWM Optimized Features


    Original     		ISL9N312ASK8T ISL9N312ASK8 MS-012AA AN9321 AN9322 ISL9N312ASK8T MS-012AA TB334 N312AS PDF

    N312AS

    Abstract: N312AP n312* transistor ISL9N312AP3 ISL9N312AS3ST
    Text: ISL9N312AP3/N312AS3ST N-Channel Logic Level PWM Optimized UltraFET Trench Power MOSFETs General Description Features This device employs a new advanced trench MOSFET technology and features low gate charge while maintaining low on-resistance. • Fast switching


    Original     		ISL9N312AP3/ISL9N312AS3ST 1450pF O-263AB O-220AB N312AS N312AP n312* transistor ISL9N312AP3 ISL9N312AS3ST PDF

    N312AP

    Abstract: N312AS N312A ISL9N312AP3 ISL9N312AS3ST
    Text: ISL9N312AP3/N312AS3ST N-Channel Logic Level PWM Optimized UltraFET Trench Power MOSFETs General Description Features This device employs a new advanced trench MOSFET technology and features low gate charge while maintaining low on-resistance. • Fast switching


    Original     		ISL9N312AP3/ISL9N312AS3ST 1450pF O-263AB O-220AB N312AP N312AS N312A ISL9N312AP3 ISL9N312AS3ST PDF

    N312A

    Abstract: AN9321 ISL9N312ASK8T MS-012AA TB334
    Text: N312ASK8T Data Sheet 30V, 0.012 Ohm, 11A, N-Channel Logic Level UltraFET Trench Power MOSFETs March 2001 File Number 5034 PWM Optimized [ /Title This device employs a new advanced trench MOSFET ISL9 technology and features low gate charge while maintaining


    Original     		ISL9N312ASK8T N312A ISL9N312ASK8 AN9321 ISL9N312ASK8T MS-012AA TB334 PDF