SCD80
Abstract: BB644 BB664 BB664-02V SC79
Text: BB644 /BB664. Silicon Variable Capacitance Diodes For VHF TV-tuners High capacitance ratio Low series inductance Low series resistance Excellent uniformity and matching due to "in-line" matching assembly procedure BB644 BB664/-02V 1 2 Type BB644
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BB644
/BB664.
BB644
BB664/-02V
BB664
BB664-02V
OD323
SCD80
Nov-14-2002
SCD80
BB664
BB664-02V
SC79
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marking code INFINEON
Abstract: A2003 marking code of 0 to Z BB867-02V
Text: BB867. Silicon Tuning Diode For SAT - Indor units High capacitance ratio C1V /C25V typ.15.8 Low series inductance Excellent uniformity and matching due to "in-line" matching assembly procedure BB867-02V 1 2 Type BB867-02V* Package SC79 Configuration
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PDF
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BB867.
/C25V
BB867-02V
BB867-02V*
Nov-14-2002
marking code INFINEON
A2003
marking code of 0 to Z
BB867-02V
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67-21/GHC-BV1/2T
Abstract: No abstract text available
Text: Technical Data Sheet TOP View LEDs 67-21/GHC-BV1/2T Features ․P-LCC-2 package. ․White package. ․Optical indicator. ․Colorless clear window. ․Wide viewing angle. ․Suitable for vapor-phase reflow, Infrared reflow and wave solder processes. ․Computable with automatic placement equipment.
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67-21/GHC-BV1/2T
DSE-0000392
Nov-14-2008
67-21/GHC-BV1/2T
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BBY55-03W
Abstract: No abstract text available
Text: BBY55. Silicon Tuning Diodes Excellent linearity High Q hyperabrupt tuning diode Low series resistance Designed for low tuning voltage operation for VCO's in mobile communications equipment Very low capacitance spread 1 BBY55-02V BBY55-02W BBY55-03W
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BBY55.
BBY55-02V
BBY55-02W
BBY55-03W
SCD80
OD323
Nov-14-2002
BBY55-03W
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SE2620T-EK1
Abstract: mobile phone jammer circuit operation mobile phone jammer Bluetooth Jammer MOBILE jammer circuit diagram mobile phone jammer circuit diagram SE2620T pen drive circuit design
Text: DATA SHEET SE2620T: 2.4 GHz Wireless LAN/BT Front End Preliminary Applications • • Product Description IEEE802.11b DSSS WLAN IEEE802.11g,n OFDM WLAN Features Dual Mode IEEE802.11b & IEEE802.11g Integrated PA, Harmonic Filter, LNA and BT port
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SE2620T:
IEEE802
SE2620T
DST-00482
SE2620T-EK1
mobile phone jammer circuit operation
mobile phone jammer
Bluetooth Jammer
MOBILE jammer circuit diagram
mobile phone jammer circuit diagram
pen drive circuit design
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1803465
Abstract: No abstract text available
Text: Tips, tricks, and techniques from the analog signal-path experts S009 ਿᕀంኒi ΣЄݯঢ়ࢽॶ໔༏ ܥፕיɣኂdᗘˈᅕϽ ᔝኂʥࣂᘸཋ༏ ၉ɐஉ߮ɮԮ ΣЄݯঢ়ࢽॶ໔༏ܥፕיɣኂd
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SP009
Nov14
1803465
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KX23H-1035
Abstract: No abstract text available
Text: ± 2g / 4g / 8g Tri-axis Digital Accelerometer with Embedded Sensor Hub Specifications Brief PART NUMBER: KX23H-1035 Rev. 0.1 Nov-14 Product Description The KX23H is a smart sensor hub system consisting of a tri-axis +/-2g, +/-4g or +/-8g silicon micromachined accelerometer and a highperformance ARM 32-bit Cortex -M0 CPU core with 128 kbyte flash
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KX23H-1035
Nov-14
KX23H
32-bit
KX23H-1035
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BBY66
Abstract: BBY66-02V BBY66-05 BBY66-05W SC79
Text: BBY66. Silicon Tuning Diodes High capacitance ratio High Q hyperabrupt tuning diode Low series resistance Designed for low tuning voltage operation for VCO's in mobile communications equipment Very low capacitance spread BBY66-02V BBY66-05 BBY66-05W
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BBY66.
BBY66-02V
BBY66-05
BBY66-05W
BBY66-02V*
BBY66-05W*
OT323
temBBY66-05)
Nov-14-2002
BBY66
BBY66-02V
BBY66-05
BBY66-05W
SC79
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BB867-02V
Abstract: BB867 SC79 marking 06
Text: BB867. Silicon Tuning Diode For SAT - Indor units High capacitance ratio C1V /C25V typ.15.8 Low series inductance Excellent uniformity and matching due to "in-line" matching assembly procedure BB867-02V 1 2 Type BB867-02V* Package SC79 Configuration
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Original
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BB867.
/C25V
BB867-02V
BB867-02V*
Nov-14-2002
/CT25
/CT28
BB867-02V
BB867
SC79
marking 06
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BBY55-03W
Abstract: BBY55 BBY55-02V BBY55-02W SC79 SCD80
Text: BBY55. Silicon Tuning Diodes Excellent linearity High Q hyperabrupt tuning diode Low series resistance Designed for low tuning voltage operation for VCO's in mobile communications equipment Very low capacitance spread 1 BBY55-02V BBY55-02W BBY55-03W
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BBY55.
BBY55-02V
BBY55-02W
BBY55-03W
SCD80
OD323
Nov-14-2002
BBY55-03W
BBY55
BBY55-02V
BBY55-02W
SC79
SCD80
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SCD80
Abstract: MARKING CODE CT2 BBY55-03W
Text: BBY55. Silicon Tuning Diodes Excellent linearity High Q hyperabrupt tuning diode Low series resistance Designed for low tuning voltage operation for VCO's in mobile communications equipment Very low capacitance spread 1 BBY55-02V BBY55-02W BBY55-03W
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Original
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BBY55.
BBY55-02V
BBY55-02W
BBY55-03W
SCD80
OD323
Nov-14-2002
MARKING CODE CT2
BBY55-03W
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Infineon Technologies Silicon Tuning Diode
Abstract: INFINEON marking
Text: BB867. Silicon Tuning Diode For SAT - Indor units High capacitance ratio C1V /C25V typ.15.8 Low series inductance Excellent uniformity and matching due to "in-line" matching assembly procedure BB867-02V 1 2 Type BB867-02V* Package SC79 Configuration
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Original
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PDF
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BB867.
/C25V
BB867-02V
BB867-02V*
Nov-14-2002
Infineon Technologies Silicon Tuning Diode
INFINEON marking
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YCL* rj45
Abstract: 208H
Text: Sch em atic: n H .J E lectrical S p e c i f i c a t i o n s : @25°C Isolation Voltage: 1500 Vrms Input to Output Isolation Voltage: 500 Vrms (P1 + 2 + 3 Turns Ratio: TX 1CT:1CT ±3% RX to P 6 + 7 + 8 ) 1CT:1CT ±3% CABLE SIDE OCL: 350uH Minimum <3>1D0KHz IDOmV 8mADC
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350uH
100KHz
10OmV
300KHz-1
00MHz)
30MHz
-12dB
80MHz
XFATM11
YCL* rj45
208H
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