NPN BIPOLAR JUNCTION TRANSISTORS MAX HFE 2000 Search Results

NPN BIPOLAR JUNCTION TRANSISTORS MAX HFE 2000 Result Highlights (5)

Part	Manufacturer	Description
2SC6026MFV	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723
TTC022	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini
TTC020	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini
TPCP8515	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PS-8
TTC021	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=120 V / IC=3 A / hFE=120~240 / VCE(sat)=0.15 V / tf=170 ns / PW-Mini

NPN BIPOLAR JUNCTION TRANSISTORS MAX HFE 2000 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
BC327 BC337 noise figure Abstract: BC337 Transistor BC307b MPS5172 "cross-reference" BC237 BC307 BC212 Text: CHAPTER 1 Selector Guide http://onsemi.com 5 http://onsemi.com 6 Small–Signal Bipolar Transistors, JFETs, and Diodes In Brief . . . Page Bipolar Transistors General–Purpose Transistors . . . . . . . . . . . . . . . . . 8 General–Purpose Multiple Transistors . . . . . . . . 11	Original	M1MA151AT1 M1MA151KT1 M1MA152AT1 M1MA152KT1 M1MA151WAT1 M1MA151WKT1 M1MA152WAT1 M1MA152WKT1 BAS16WT1 M1MA141KT1 BC327 BC337 noise figure BC337 Transistor BC307b MPS5172 "cross-reference" BC237 BC307 BC212	PDF
2N3906 Darlington transistor Abstract: BC337 MPS5172 "cross-reference" low noise transistors bc638 transistor mpf102 LOW NOISE BC638 SOT-346 431 BC237 BC307 BC212 Text: CHAPTER 1 Selector Guide http://onsemi.com 5 Small–Signal Bipolar Transistors, JFETs, and Diodes In Brief . . . Page Bipolar Transistors General–Purpose Transistors . . . . . . . . . . . . . . . . . 8 General–Purpose Multiple Transistors . . . . . . . . 11	Original	M1MA151AT1 M1MA151KT1 M1MA152AT1 M1MA152KT1 M1MA151WAT1 M1MA151WKT1 M1MA152WAT1 M1MA152WKT1 BAS16WT1 M1MA141KT1 2N3906 Darlington transistor BC337 MPS5172 "cross-reference" low noise transistors bc638 transistor mpf102 LOW NOISE BC638 SOT-346 431 BC237 BC307 BC212	PDF
BC857BM3T5G Abstract: BC487 "cross-reference" 2N3904 PNP BC237 BC449 "cross-reference" MPS5172 "cross-reference" BC856BM3T5G Text: Small−Signal Bipolar Transistors, JFETs, and Diodes In Brief . . . Page Bipolar Transistors General−Purpose Transistors . . . . . . . . . . . . . . . . . . 25 General−Purpose Multiple Transistors . . . . . . . . . . 30 Low Noise and Good hFE Linearity . . . . . . . . . . . . . 31	Original	OT-23 SC-59 SC-70 SC-75, SC-90 OT-346 OT-323 OT-416 OT-523, BC857BM3T5G BC487 "cross-reference" 2N3904 PNP BC237 BC449 "cross-reference" MPS5172 "cross-reference" BC856BM3T5G	PDF
JE802 Abstract: JE700 JE803 JE700 MOTOROLA JE702 JE703 JE800 75 watt npn switching transistor MJE700T Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA PNP M JE700,T M JE702 Plastic Darlington Com plem entary Silicon Power Transistors M JE703 . . . designed lor general-purpose amplifier and low-speed switching applications. • • • High DC Current Gain — hFE = 2000 Typ @ lc = 2.0 Adc	OCR Scan	JE700 JE702 JE703 JE800 JE802 JE803 MJE700 MJE800 T0220AB, MJE700T JE803 JE700 MOTOROLA 75 watt npn switching transistor	PDF
MP4T3243 Abstract: Bipolar Transistor NPN bipolar junction transistors max hfe 2000 MP4T324300 mag710 MP4T324333 MP4T324335 S21E S22E sot23 1303 Text: Bipolar High fT Low Voltage NPN Silicon Transistors MP4T3243 Series V4.00 Case Style Features • Designed for 3-5 Volt Operation • Useable to 6 GHz in Oscillators • Useable for Low Noise, Low Voltage Driver Amplifiers Through 3 GHz • Useful for Class C Amplifiers	Original	MP4T3243 OT-23 MP4T324335 Bipolar Transistor NPN bipolar junction transistors max hfe 2000 MP4T324300 mag710 MP4T324333 MP4T324335 S21E S22E sot23 1303	PDF
Untitled Abstract: No abstract text available Text: Bipolar High fT Low Voltage NPN Silicon Transistors MP4T3243 Series V4.00 Features • • • • • • • Case Style Designed for 3-5 Volt Operation Useable to 6 GHz in Oscillators Useable for Low Noise, Low Voltage Driver Amplifiers Through 3 GHz Useful for Class C Amplifiers	Original	MP4T3243 OT-23 MP4T324335	PDF
sot23 1303 Abstract: IC 3263 NPN bipolar junction transistors max hfe 2000 1272 hybrid 1303 SOT23 MA4T324335 Text: Bipolar High fT Low Voltage NPN Silicon Transistors MA4T3243 Series V3.00 Case Styles Features ● ● ● ● ● ● ● Designed for 3-5 Volt Operation Useable to 6 GHz in Oscillators Useable for Low Noise, Low Voltage Driver Amplifiers Through 3 GHz Useful for Class C Amplifiers	Original	MA4T3243 OT-23 MA4T324335 sot23 1303 IC 3263 NPN bipolar junction transistors max hfe 2000 1272 hybrid 1303 SOT23 MA4T324335	PDF
21E sot Abstract: IC 3263 1303 SOT23 Text: M an A M P com pany Bipolar High fT Low Voltage NPN Silicon Transistors MA4T3243 Series V3.00 Case Styles Features • D esigned for 3-5 Volt O peration • U seable to 6 GHz in Oscillators • U seable for Low Noise, Low Voltage Driver Amplifiers Through 3 GHz	OCR Scan	MA4T3243 MA4T324335 21E sot IC 3263 1303 SOT23	PDF
2n3055 motorola Abstract: tip122 tip127 audio amp schematic transistor equivalent book 2sc2238 IR640 transistor motorola 40411 TRANSISTOR REPLACEMENT GUIDE ir431 motorola AN485 C2688 2SA1046 Text: Index and Cross Reference 1 Selector Guide 2 Data Sheets 3 Surface Mount Package Information and Tape and Reel Specifications 4 Outline Dimensions and Leadform Options 5 Applications Information 6 Thermal Clad is a trademark of the Bergquist Company. Chipscretes, Designers’, Duowatt, EpiBase, PowerBase, PowerTap, SUPERBRIDGES, Surmetric, Switchmode, Thermopad,	Original	1PHX11122C 2n3055 motorola tip122 tip127 audio amp schematic transistor equivalent book 2sc2238 IR640 transistor motorola 40411 TRANSISTOR REPLACEMENT GUIDE ir431 motorola AN485 C2688 2SA1046	PDF
2N6488 MOTOROLA Abstract: 2N6491 MOTOROLA 1N5825 2N6487 2N6488 2N6490 2N6491 MSD6100 Text: MOTOROLA Order this document by 2N6487/D SEMICONDUCTOR TECHNICAL DATA NPN 2N6487 2N6488* PNP 2N6490 2N6491* Complementary Silicon Plastic Power Transistors . . . designed for use in general–purpose amplifier and switching applications. • DC Current Gain Specified to 15 Amperes —	Original	2N6487/D 2N6487 2N6488* 2N6490 2N6491* 2N6487, 2N6488, 2N6491 220AB 2N6488 MOTOROLA 2N6491 MOTOROLA 1N5825 2N6487 2N6488 2N6490 2N6491 MSD6100	PDF
2N6488 MOTOROLA Abstract: 2N6487 1N5825 2N6488 2N6490 2N6491 MSD6100 Text: MOTOROLA Order this document by 2N6487/D SEMICONDUCTOR TECHNICAL DATA NPN 2N6487 2N6488 * PNP 2N6490 2N6491* Complementary Silicon Plastic Power Transistors . . . designed for use in general–purpose amplifier and switching applications. • DC Current Gain Specified to 15 Amperes —	Original	2N6487/D 2N6487 2N6488 2N6490 2N6491* 2N6487, 2N6488, 2N6491 220AB 2N6488 MOTOROLA 2N6487 1N5825 2N6488 2N6490 2N6491 MSD6100	PDF
BOX54B Abstract: pnp 3223 BDX538 bdx548 BDX53C MOTOROLA High voltage fast switching power transistor pnp BDX54B NPN bipolar junction transistors max hfe 2000 box54 TRANSISTOR C 3223 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA P lastic M edium -Pow er Com plem entary Silicon Transistors _ BDX53C . designed for general-purpose amplifier and low-speed switching applications. • High DC Current Gain — hFE = 2500 Typ @ Iq = 4.0 Adc • Collector Emitter Sustaining Voltage — @ 1 0 0 mAdc	OCR Scan	BDX53B, BDX53C, O-220AB BDX53B BDX53C BDX54B BDX54C BDX54B BDX53C BOX54B pnp 3223 BDX538 bdx548 BDX53C MOTOROLA High voltage fast switching power transistor pnp NPN bipolar junction transistors max hfe 2000 box54 TRANSISTOR C 3223	PDF
tip142/TIP147 AMPLIFIER CIRCUIT Abstract: 100 amp npn darlington power transistors TIP142 Application Note TIP142 Bipolar Transistor npn darlington transistor 200 watts TIP142 TIP147 tip142,tip147 amplifier circuits TIP140-D TIP147 Text: MOTOROLA Order this document by TIP140/D SEMICONDUCTOR TECHNICAL DATA NPN TIP140 TIP141* TIP142* PNP TIP145 TIP146* TIP147* Darlington Complementary Silicon Power Transistors . . . designed for general–purpose amplifier and low frequency switching applications.	Original	TIP140 TIP141 TIP142 TIP145 TIP146 TIP147 TIP140/D* TIP140/D tip142/TIP147 AMPLIFIER CIRCUIT 100 amp npn darlington power transistors TIP142 Application Note TIP142 Bipolar Transistor npn darlington transistor 200 watts TIP142 TIP147 tip142,tip147 amplifier circuits TIP140-D TIP147	PDF
box 53c Abstract: box 53c IC 10 amp npn darlington power transistors 1N5825 BDX53B BDX53C BDX54B BDX54C MSD6100 box 54c IC Text: MOTOROLA Order this document by BDX53B/D SEMICONDUCTOR TECHNICAL DATA Plastic Medium-Power Complementary Silicon Transistors NPN BDX53B BDX53C PNP . . . designed for general–purpose amplifier and low–speed switching applications. BDX54B • High DC Current Gain —	Original	BDX53B/D* BDX53B/D box 53c box 53c IC 10 amp npn darlington power transistors 1N5825 BDX53B BDX53C BDX54B BDX54C MSD6100 box 54c IC	PDF

BOX 53C darlington power transistor Abstract: 1N5825 BDX53B BDX53C BDX54B BDX54C MSD6100 BDX53C MOTOROLA Text: MOTOROLA Order this document by BDX53B/D SEMICONDUCTOR TECHNICAL DATA Plastic Medium-Power Complementary Silicon Transistors NPN BDX53B BDX53C PNP . . . designed for general–purpose amplifier and low–speed switching applications. BDX54B • High DC Current Gain —	Original	BDX53B/D* BDX53B/D BOX 53C darlington power transistor 1N5825 BDX53B BDX53C BDX54B BDX54C MSD6100 BDX53C MOTOROLA	PDF
tip141 equivalent Abstract: tip142/TIP147 AMPLIFIER CIRCUIT TIP142 TIP147 DIODE 638 MOTOROLA darlington transistor with built-in temperature c 100 amp npn darlington power transistors npn darlington transistor 150 watts npn darlington transistor 200 watts 1N5825 MSD6100 Text: MOTOROLA Order this document by TIP140/D SEMICONDUCTOR TECHNICAL DATA NPN TIP140 TIP141* TIP142* PNP TIP145 TIP146* TIP147* Darlington Complementary Silicon Power Transistors . . . designed for general–purpose amplifier and low frequency switching applications.	Original	TIP140/D TIP140 TIP141* TIP142* TIP145 TIP146* TIP147* TIP140, TIP141, tip141 equivalent tip142/TIP147 AMPLIFIER CIRCUIT TIP142 TIP147 DIODE 638 MOTOROLA darlington transistor with built-in temperature c 100 amp npn darlington power transistors npn darlington transistor 150 watts npn darlington transistor 200 watts 1N5825 MSD6100	PDF
80K-40 Abstract: tip142/TIP147 AMPLIFIER CIRCUIT bipolar transistor td tr ts tf 1N5825 MSD6100 TIP140 TIP141 TIP142 TIP145 TIP146 Text: MOTOROLA Order this document by TIP140/D SEMICONDUCTOR TECHNICAL DATA NPN TIP140 TIP141* TIP142* PNP TIP145 TIP146* TIP147* Darlington Complementary Silicon Power Transistors . . . designed for general–purpose amplifier and low frequency switching applications.	Original	TIP140/D TIP140 TIP141* TIP142* TIP145 TIP146* TIP147* TIP140, TIP141, 80K-40 tip142/TIP147 AMPLIFIER CIRCUIT bipolar transistor td tr ts tf 1N5825 MSD6100 TIP140 TIP141 TIP142 TIP145 TIP146	PDF
Motorola TIP125 Abstract: MOTOROLA MJD122 2n6045 motorola 1N5825 2N6040 2N6045 MJD122 MJD127 MSD6100 TIP120 Text: MOTOROLA Order this document by MJD122/D SEMICONDUCTOR TECHNICAL DATA NPN MJD122* PNP MJD127* Complementary Darlington Power Transistors DPAK For Surface Mount Applications *Motorola Preferred Device Designed for general purpose amplifier and low speed switching applications.	Original	MJD122/D* MJD122/D Motorola TIP125 MOTOROLA MJD122 2n6045 motorola 1N5825 2N6040 2N6045 MJD122 MJD127 MSD6100 TIP120	PDF
2N6282 MOTOROLA Abstract: 2N6282 2N6287 2n6285 1N5825 2N6283 2N6284 2N6286 MSD6100 2N6284 motorola Text: MOTOROLA Order this document by 2N6282/D SEMICONDUCTOR TECHNICAL DATA NPN Darlington Complementary Silicon Power Transistors . . . designed for general–purpose amplifier and low–frequency switching applications. • High DC Current Gain @ IC = 10 Adc —	Original	2N6282/D 2N6282, 2N6283, 2N6284 2N6285, 2N6286, 2N6287 2N6285 2N6282 MOTOROLA 2N6282 2N6287 2n6285 1N5825 2N6283 2N6284 2N6286 MSD6100 2N6284 motorola	PDF
BD790 Abstract: BD792 BD789 BD791 MBR340 MSD6100 Text: MOTOROLA Order this document by BD789/D SEMICONDUCTOR TECHNICAL DATA NPN BD789 BD791* PNP BD790 BD792* Complementary Plastic Silicon Power Transistors . . . designed for low power audio amplifier and low–current, high speed switching applications. • High Collector–Emitter Sustaining Voltage —	Original	BD789/D BD789 BD791* BD790 BD792* BD789, BD791, BD792 BD789/D* BD790 BD792 BD789 BD791 MBR340 MSD6100	PDF
bd788 Abstract: 1N5825 BD787 MSD6100 Text: MOTOROLA Order this document by BD787/D SEMICONDUCTOR TECHNICAL DATA NPN BD787 PNP BD788 Complementary Plastic Silicon Power Transistors . . . designed for lower power audio amplifier and low current, high–speed switching applications. • Low Collector–Emitter Sustaining Voltage —	Original	BD787/D* BD787/D bd788 1N5825 BD787 MSD6100	PDF
2N6041 Abstract: 2N6044 2n6041 motorola 1N582 2N6040-D 2N6044 MOTOROLA 1N5825 2N6040 2N6042 2N6043 Text: MOTOROLA Order this document by 2N6040/D SEMICONDUCTOR TECHNICAL DATA Plastic Medium-Power Complementary Silicon Transistors PNP 2N6040 thru 2N6042* NPN 2N6043 thru 2N6045* . . . designed for general–purpose amplifier and low–speed switching applications.	Original	2N6040/D 2N6040 2N6042* 2N6043 2N6045* 2N6040, 2N6041, 2N6044 2N6042, 2N6041 2N6044 2n6041 motorola 1N582 2N6040-D 2N6044 MOTOROLA 1N5825 2N6040 2N6042 2N6043	PDF
FTZ605 Abstract: ZDT6790 fzt653 ZDT1049 ZTX415 ZTX796A fzt651 ZXGD3003E6 2DD1766 zetex transistor to92 Text: DIO 1943 BiPolar brochure Final Artwork 12/4/10 14:50 Page 2 BIPOLAR CORPORATE HEADQUARTERS AND AMERICAS SALES OFFICE TRANSISTORS 15660 N. Dallas Parkway, Suite 850, Dallas, TX 75248 USA Tel: 972-385-2810 E-mail: [email protected] EUROPE SALES OFFICE	Original	D-81541 DDTA114TCA DDTA114TKA DDA114TH DDA114TU DDA114TK DDTA124TE DDTA124TUA DDTA124TCA DDTA124TKA FTZ605 ZDT6790 fzt653 ZDT1049 ZTX415 ZTX796A fzt651 ZXGD3003E6 2DD1766 zetex transistor to92	PDF
Untitled Abstract: No abstract text available Text: Silicon Bipolar High fT Low Noise Medium Power 12 Volt Transistors MP4T243 Series V3.00 Features • Low Phase Noise Oscillator Transistor • 200 mW Driver Amplifier Transistor • Operation to 8 GHz • Available as Chip • Available in Hermetic Surface Mount Packages	Original	MP4T243 MP4T24300 MP4T24335	PDF

NPN BIPOLAR JUNCTION TRANSISTORS MAX HFE 2000 Search Results

NPN BIPOLAR JUNCTION TRANSISTORS MAX HFE 2000 Result Highlights (5)

NPN BIPOLAR JUNCTION TRANSISTORS MAX HFE 2000 Datasheets Context Search

BC327 BC337 noise figure

2N3906 Darlington transistor

BC857BM3T5G

JE802

MP4T3243

Untitled

sot23 1303

21E sot

2n3055 motorola

2N6488 MOTOROLA

2N6488 MOTOROLA

BOX54B

tip142/TIP147 AMPLIFIER CIRCUIT

box 53c

BOX 53C darlington power transistor

tip141 equivalent

80K-40

Motorola TIP125

2N6282 MOTOROLA

BD790

bd788

2N6041

FTZ605

Untitled