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    P-CHANNEL LATERAL DIFFUSED MOS Search Results

    P-CHANNEL LATERAL DIFFUSED MOS Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation
    TK090U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 30 A, 0.09 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    P-CHANNEL LATERAL DIFFUSED MOS Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    "RF MOSFETs"

    Abstract: "vlsi technology" abstract for n channel depletion MOSFET depletion p mosfet RF MOSFETs AN1226 mosfet for different channel length AN1228 n mosfet depletion mosfet p-type
    Text: AN1226 APPLICATION NOTE UNDERSTANDING LDMOS DEVICE FUNDAMENTALS John Pritiskutch - Brett Hanson 1. ABSTRACT This paper focuses on the structural aspects of two basic types of RF power MOSFETS: the DMOS and the LDMOS. The comparison of the DMOS and LDMOS structures reveals the basic fundamentals of the


    Original     		PDF AN1226 "RF MOSFETs" "vlsi technology" abstract for n channel depletion MOSFET depletion p mosfet RF MOSFETs AN1226 mosfet for different channel length AN1228 n mosfet depletion mosfet p-type

    P-Channel Depletion Mosfets

    Abstract: shockley diode P-Channel Depletion Mode FET shockley diode application shockley diode datasheet n channel depletion MOSFET list of n channel fet jfet idss 10 ma vp -3 diode shockley P-Channel Depletion Mode Field Effect Transistor
    Text: AN101 An Introduction to FETs The family tree of FET devices Figure 1 may be divided into two main branches, Junction FETs (JFETs) and Insulated Gate FETs (or MOSFETs, metal-oxide- semiconductor field-effect transistors). Junction FETs are inherently depletion-mode devices, and are available in


    Original     		PDF AN101 P-Channel Depletion Mosfets shockley diode P-Channel Depletion Mode FET shockley diode application shockley diode datasheet n channel depletion MOSFET list of n channel fet jfet idss 10 ma vp -3 diode shockley P-Channel Depletion Mode Field Effect Transistor

    P-Channel Depletion Mode FET

    Abstract: P-Channel Depletion Mosfets P-Channel Depletion Mode Field Effect Transistor P-Channel Depletion mosFET n channel depletion MOSFET N-Channel JFET FETs Siliconix JFET application note list of n channel fet shockley diode p channel depletion mosfet
    Text: AN101 An Introduction to FETs The family tree of FET devices Figure 1 may be divided into two main branches, Junction FETs (JFETs) and Insulated Gate FETs (or MOSFETs, metal-oxidesemiconductor field-effect transistors). Junction FETs are inherently depletion-mode devices, and are available in


    Original     		PDF AN101 P-Channel Depletion Mode FET P-Channel Depletion Mosfets P-Channel Depletion Mode Field Effect Transistor P-Channel Depletion mosFET n channel depletion MOSFET N-Channel JFET FETs Siliconix JFET application note list of n channel fet shockley diode p channel depletion mosfet

    "RF MOSFETs"

    Abstract: n mosfet depletion depletion p mosfet "vlsi technology" abstract for N CHANNEL DEPLETION MOSFET p channel depletion mosfet RF MOSFETs "vlsi technology" abstract AN1226 n mosfet depletion note
    Text: AN1226 APPLICATION NOTE UNDERSTANDING LDMOS DEVICE FUNDAMENTALS John Pritiskutch - Brett Hanson 1. ABSTRACT This paper focuses on the structural aspects of two basic types of RF power MOSFETS: the DMOS and the LDMOS. The comparison of the DMOS and LDMOS structures reveals the basic fundamentals of the


    Original     		PDF AN1226 "RF MOSFETs" n mosfet depletion depletion p mosfet "vlsi technology" abstract for N CHANNEL DEPLETION MOSFET p channel depletion mosfet RF MOSFETs "vlsi technology" abstract AN1226 n mosfet depletion note

    relay 12v 200 ohm

    Abstract: load-dump airbag temic telefunken IC flasher
    Text: BCDMOS and I2L Technologies BCDMOS Characteristics Power transistor: MOS transistors: CMOS 5 V: Bipolar: Masks: Wiring: Channel length: VBR = 55 V, rDSon = 4.5 mWcm2 NMOS/PMOS 12 V 9 500 Gates/mm2 npn/pnp lateral 18 2 layers 2 mm (CMOS) Transistors Parameter


    Original     		PDF 10-mV relay 12v 200 ohm load-dump airbag temic telefunken IC flasher

    P-Channel Depletion Mode FET

    Abstract: p channel depletion mosfet an101 siliconix N-Channel JFET FETs JFETs Junction FETs Junction FETs JFETs list of n channel fet n channel depletion MOSFET Depletion MOSFET depletion
    Text: AN101 Siliconix An Introduction to FETs Introduction The basic principle of the fieldĆeffect transistor FET has been known since J. E. Lilienfeld's patent of 1925. The theoretical description of a FET made by Shockley in 1952 paved the way for development of a classic electronic


    Original     		PDF AN101 P-Channel Depletion Mode FET p channel depletion mosfet an101 siliconix N-Channel JFET FETs JFETs Junction FETs Junction FETs JFETs list of n channel fet n channel depletion MOSFET Depletion MOSFET depletion

    p channel depletion mosfet

    Abstract: list of n channel fet P-Channel Depletion Mode FET shockley diode Depletion MOSFET 6D n channel depletion MOSFET list of n channel MOSFET P-Channel Depletion Mode Field Effect Transistor depletion p mosfet P-Channel Depletion Mosfets
    Text: AN101 An Introduction to FETs Introduction The basic principle of the field-effect transistor FET has been known since J. E. Lilienfeld’s patent of 1925. The theoretical description of a FET made by Shockley in 1952 paved the way for development of a classic electronic device which provides the designer the means to accomplish nearly every circuit function. At one time, the


    Original     		PDF AN101 p channel depletion mosfet list of n channel fet P-Channel Depletion Mode FET shockley diode Depletion MOSFET 6D n channel depletion MOSFET list of n channel MOSFET P-Channel Depletion Mode Field Effect Transistor depletion p mosfet P-Channel Depletion Mosfets

    AGR21030EF

    Abstract: 2.4 ghz mosfet AGR21030XF JESD22-C101A
    Text: AGR21030EF 30 W, 2.110 GHz—2.170 GHz, N-Channel E-Mode, Lateral MOSFET Introduction The AGR21030EF is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for wideband code division multiple access (W-CDMA), single and


    Original     		PDF AGR21030EF AGR21030EF 1030EF AGR21030XF 21045F 12-digit 2.4 ghz mosfet AGR21030XF JESD22-C101A

    TH 2190 HOT Transistor

    Abstract: TH 2190 mosfet AGR21180EF JESD22-C101A GHZ-21
    Text: AGR21180EF 180 W, 2.110 GHz—2.170 GHz, N-Channel E-Mode, Lateral MOSFET Introduction The AGR21180EF is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for wideband code division multiple access (W-CDMA), single and


    Original     		PDF AGR21180EF AGR21180EF AGR19K180U AGR21180XF 12-digit TH 2190 HOT Transistor TH 2190 mosfet JESD22-C101A GHZ-21

    mosfet ghz

    Abstract: PB04-014RFPP
    Text: Preliminary Product Brief March 2004 AGR19K180E 180 W, 1.840 GHz—1.870 GHz, N-Channel E-Mode, Lateral MOSFET Introduction The AGR19K180EF is a high-voltage, gold-metalized, laterally diffused me tal oxide semiconductor LDMOS RF power transistor suitable for Korean PCS


    Original     		PDF AGR19K180E AGR19K180EF IS-95B PB04-068RFPP PB04-014RFPP) mosfet ghz PB04-014RFPP

    AGR19K180E

    Abstract: AGR19K180EF JESD22-C101A JESD22-C101-A
    Text: Preliminary Product Brief April 2004 AGR19K180E 180 W, 1.840 GHz—1.870 GHz, N-Channel E-Mode, Lateral MOSFET Introduction The AGR19K180EF is a high-voltage, gold-metalized, laterally diffused me tal oxide semiconductor LDMOS RF power transistor suitable for Korean PCS


    Original     		PDF AGR19K180E AGR19K180EF IS-95B AGR19K180EF PB04-079RFPP PB04-068RFPP) AGR19K180E JESD22-C101A JESD22-C101-A

    AGR21060EF

    Abstract: 100B8R2JCA500X CDM 07 C14A JESD22-C101A R210 AGR21060E AGR21060EU C15B material sheet C15A
    Text: AGR21060E 60 W, 2.110 GHz—2.170 GHz, N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The AGR21060E is a high-voltage, gold-metalized, enhancement-mode, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for wideband code division multiple access


    Original     		PDF AGR21060E AGR21060E AGR21060EU AGR21060EF AGR21060EF 100B8R2JCA500X CDM 07 C14A JESD22-C101A R210 AGR21060EU C15B material sheet C15A

    21045F

    Abstract: AGR26045EF J500 JESD22-C101A c.d.m. technology acp transistor EP 430 TRANSISTOR MOSFET 2645
    Text: AGR26045EF 45 W, 2.535 GHz—2.655 GHz, N-Channel E-Mode, Lateral MOSFET Introduction The AGR26045EF is a high-voltage, gold-metalized, enhancement mode, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for ultrahigh-frequency (UHF) applications,


    Original     		PDF AGR26045EF AGR26045EF ACGR26045EF AGR26045XF 21045F 12-digit 21045F J500 JESD22-C101A c.d.m. technology acp transistor EP 430 TRANSISTOR MOSFET 2645

    F1 J37

    Abstract: C14A AGR26125E AGR26125EF AGR26125EU C13B JESD22-C101A 2595MHz
    Text: AGR26125E 125 W, 2.5 GHz—2.7 GHz, N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The AGR26125E is a high-voltage, gold-metalized, enhancement mode, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for ultrahigh-frequency (UHF) applications


    Original     		PDF AGR26125E AGR26125E AGR26125EU AGR26125EF F1 J37 C14A AGR26125EF AGR26125EU C13B JESD22-C101A 2595MHz

    AGR26125E

    Abstract: AGR26125EF AGR26125EU AGR26125XF AGR26125XU JESD22-C101A
    Text: Preliminary Product Brief April 2004 AGR26125E 125 W, 2.535 GHz—2.655 GHz, N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The AGR26125E is a high-voltage, gold-metalized, enhancement mode, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for ultrahigh-frequency (UHF) applications


    Original     		PDF AGR26125E AGR26125E AGR26125EU AGR26125EF PB04-081RFPP PB03-192RFPP) AGR26125EF AGR26125EU AGR26125XF AGR26125XU JESD22-C101A

    c7a series vishay capacitor

    Abstract: F1 J37 C14A AGR26125E AGR26125EF AGR26125EU C13B JESD22-C101A taconic vitramon CAPACITOR
    Text: AGR26125E 125 W, 2.5 GHz—2.7 GHz, N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The AGR26125E is a high-voltage, gold-metalized, enhancement mode, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for ultrahigh-frequency (UHF) applications


    Original     		PDF AGR26125E AGR26125E AGR26125EU AGR26125EF c7a series vishay capacitor F1 J37 C14A AGR26125EF AGR26125EU C13B JESD22-C101A taconic vitramon CAPACITOR

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Product Brief December 2003 AGR26045E 45 W, 2.535 GHz—2.655 GHz, N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The AGR26045E is a high-voltage, gold-metalized, enhancement mode, laterally diffused metal oxide


    Original     		PDF AGR26045E AGR26045EU AGR26045EF PB04-022RFPP

    21045F

    Abstract: No abstract text available
    Text: Preliminary Data Sheet May 2004 AGR26045E 45 W, 2.535 GHz—2.655 GHz, N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The AGR26045E is a high-voltage, gold-metalized, enhancement mode, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for ultrahigh-frequency (UHF) applications,


    Original     		PDF AGR26045E AGR26045EU AGR26045EF AGR26045Eerican DS04-110RFPP 21045F

    AGR26045EF

    Abstract: J500 JESD22-C101A
    Text: Preliminary Data Sheet June 2004 AGR26045EF 45 W, 2.535 GHz—2.655 GHz, N-Channel E-Mode, Lateral MOSFET Introduction The AGR26045EF is a high-voltage, gold-metalized, enhancement mode, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for ultrahigh-frequency (UHF) applications,


    Original     		PDF AGR26045EF AGR26045EF po8109-9138 DS04-226RFPP DS04-110RFPP) J500 JESD22-C101A

    TH 2190 HOT Transistor

    Abstract: No abstract text available
    Text: Preliminary Data Sheet March 2004 AGR21180EF 180 W, 2.110 GHz—2.170 GHz, N-Channel E-Mode, Lateral MOSFET Introduction The AGR21180EF is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for wideband


    Original     		PDF AGR21180EF TH 2190 HOT Transistor

    AGR21060EF

    Abstract: AGERE AGR21060E AGR21060EU JESD22-C101A JESD22-A114B
    Text: Preliminary Product Brief November 2003 AGR21060E 60 W, 2.110 GHz—2.170 GHz, N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The AGR21060E is a high-voltage, gold-metalized, enhancement mode, laterally diffused metal oxide


    Original     		PDF AGR21060E AGR21060E AGR21060EU AGR21060EF PB04-015RFPP PB03-096RFPP) AGR21060EF AGERE AGR21060EU JESD22-C101A JESD22-A114B

    AGR21180EF

    Abstract: AGR21180EU JESD22-A114
    Text: Preliminary Product Brief April 2003 AGR21180E 180 W, 2.110 GHz—2.170 GHz, N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The AGR21180E is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for wideband


    Original     		PDF AGR21180E AGR21180E AGR21180EU AGR21180EF PB03-097RFPP PB03-072RFPP) AGR21180EF AGR21180EU JESD22-A114

    J964

    Abstract: AGR21045EF AGR21045XF JESD22-C101A
    Text: Data Sheet AGR21045EF 45 W, 2.110 GHz—2.170 GHz, N-Channel E-Mode, Lateral MOSFET Introduction The AGR21045EF is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for wideband code division multiple access (W-CDMA), single and


    Original     		PDF AGR21045EF AGR21045EF CGR21045EF AGR21045XF 21045F 12-digit J964 AGR21045XF JESD22-C101A

    con tech

    Abstract: ay dm gate ng CHANNEL WELL TECH
    Text: u TMOS What’s An Enhancement-Mode, Silicon Gate, Power MOSFET? It is a po w e r transisto r that uses M etal O xid e S e m icon ducto r tech nolog y to fabricate a Field Effect Transistor. The de vice is con tro lled by applying a volta ge to the M O S gate to enhance


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