NT-1/4-0-SP-CS5480
Abstract: No abstract text available
Text: 16 M DRAM DATA COLLECTION 4 M-word by 4-bit, Revision A 1997 Document No. M12205XJ1V0IF00 1st edition Date Published January 1997 N Printed in Japan DRAM PROCESS 1 DIE PHOTOGRAPH 2 DIFFERENCES BETWEEN REVISION A AND REVISION L 3 µPD42S16405L, 4216405L
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M12205XJ1V0IF00
PD42S16405L,
4216405L
PD42S17405L,
4217405L
PD42S16405,
PD42S17405,
PD42S16400L,
4216400L
PD42S17400L,
NT-1/4-0-SP-CS5480
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4216400
Abstract: uPD4217400LLA-A60 PD42S17400L
Text: DATA SHEET MOS INTEGRATED CIRCUIT µPD42S16400L, 4216400L, 42S17400L, 4217400L 3.3 V OPERATION 16 M-BIT DYNAMIC RAM 4 M-WORD BY 4-BIT, FAST PAGE MODE Description The µPD42S16400L, 4216400L, 42S17400L, 4217400L are 4,194,304 words by 4 bits dynamic CMOS RAMs. The
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PDF
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PD42S16400L,
4216400L,
42S17400L,
4217400L
4217400L
42S17400L
4216400
uPD4217400LLA-A60
PD42S17400L
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uPC2581
Abstract: uPC2002 2sd1557 uPA67C uPB582 upc1237 uPC317 2P4M PIN DIAGRAM 2SC4328 uPC157
Text: C&C for Human Potential Microcomputer 1 SEMICONDUCTOR SELECTION GUIDE GUIDE BOOK IC Memory 2 Semi-Custom IC 3 Particular Purpose IC 4 General Purpose Linear IC 5 Transistor / Diode / Thyristor 6 Microwave Device / Consumer Use High Frequency Device 7 Optical Device 8
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PD7500
X10679EJAV0SG00
MF-1134)
1995P
uPC2581
uPC2002
2sd1557
uPA67C
uPB582
upc1237
uPC317
2P4M PIN DIAGRAM
2SC4328
uPC157
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D4217400
Abstract: nec 4217400
Text: PD4216400, 4217400 4,194,304 X 4-Bit Dynamic CMOS RAM M J jW NEC Electronics Inc. Description The ¿/PD4216400 and the /JPD4217400 are fast-page dynamic RAMs organized as 4,194,304 words by 4 bits and designed to operate from a single +5-volt power supply. Advanced polycide technology minimizes sili
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JJPD4216400,
/PD4216400
/JPD4217400
28/24-pin
MjE30(
6D-15
fiPD4216400,
pPD4216400,
D4217400
nec 4217400
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nec 4217400
Abstract: 4217400 upd4217400
Text: DATA SHEET NEC MOS INTEGRATED CIRCUIT PD4216400,4217400 16 M-BIT DYNAMIC RAM 4 M-WORD BY 4-BIT, FAST PAGE MODE Description The ¿ PD4216400, 4217400 are 4 194 304 w o rd s by 4 b its d yn a m ic CMOS RAMs. These d iffe r in refresh cycle. These are packed in 26-pin plastic TSOP (II and 26-pin plastic SOJ.
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uPD4216400
uPD4217400
PD4216400,
26-pin
/PD4216400-50
//PD4217400-50
/PD4216400-60
PD4217400-60
/iPD4216400-70
nec 4217400
4217400
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nec 4217400
Abstract: nec 4216400 4216400
Text: N E C ELECTRONICS INC blE D NEC NEC Electronics Inc. • h4275S5 RRb H N E C E PD4216400, 4217400 4,194,304 X 4-Bit Dynamic CMOS RAM ~ h Description T he ¿/PD4216400 and the //PD 4217400 are fast-page d ynam ic RAMs organized as 4,194,304 words by 4 bits
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uPD4216400
uPD4217400
/PD4216400
pPD4216400,
JJPD4216400,
nec 4217400
nec 4216400
4216400
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nec vw rcd 300
Abstract: No abstract text available
Text: NEC MOS INTEGRATED CIRCUIT //PD4216400,4217400 16 M-BIT DYNAMIC RAM 4 M-WORD BY 4-BIT, FAST PAGE MODE DESCRIPTION The |iPD 4216400, 4217400 are 4 194 304 words by 4 bits dynamic CMOS RAMs. They differ in refresh cycle execution. FEATURES • 4 194 304 w o rd s by 4 bits organization
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uPD4216400
uPD4217400
/JPD4216400,
PD4216400G3,
4217400G3
26-pin
PD4216400LA,
4217400LA
nec vw rcd 300
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Untitled
Abstract: No abstract text available
Text: DATA SHEET NEC MOS INTEGRATED CIRCUIT /¿PD4216400,4217400 16 M-BIT DYNAMIC RAM 4 M-WORD BY 4-BIT, FAST PAGE MODE Description The /PD4216400, 4217400 are 4 194 304 w o rd s by 4 bits d yn a m ic CMOS RAMs. These d iffe r in refresh cycle. These are packed in 26-pin plastic TSOP II and 26-pin plastic SOJ.
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PDF
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PD4216400
/JPD4216400,
26-pin
PD4216400-50
bM2755S
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Untitled
Abstract: No abstract text available
Text: DATA SHEET NEC / _ / MOS INTEGRATED CIRCUIT /iPD42S16400L, 4216400L, 42S17400L, 4217400L 3.3 V OPERATION 16 M BIT DYNAMIC RAM 4 M-WORD BY 4-BIT, FAST PAGE MODE Description T h e ¿ P D 42S16400L, 4 21 6 4 0 0 L , 4 2 S 1 7 4 0 0 L , 4 2 1 7 4 0 0 L a re 4 194 3 0 4 w o r d s b y 4 b its d y n a m ic C M O S R A M s .
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/iPD42S16400L,
4216400L,
42S17400L,
4217400L
42S16400L,
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NEC 4217400-60
Abstract: nec 4216400 4217400-60 4216400 NEC+4217400-60
Text: DATA SHEET NEC / MOS INTEGRATED CIRCUIT -//¿PD42S16400,4216400,42S17400,4217400 16 M-BIT DYNAMIC RAM 4 M-WORD BY 4-BIT, FAST PAGE MODE Description The ¿/PD42S16400, 4216400, 42S17400, 4217400 are 4,194,304 words by 4 bits CMOS dynamic RAMs. The fast page mode capability realize high speed access and low power consumption.
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uPD42S16400
uPD4216400
uPD42S17400
uPD4217400
/iPD42S16400,
42S17400
26-pin
VP15-207-2
NEC 4217400-60
nec 4216400
4217400-60
4216400
NEC+4217400-60
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Untitled
Abstract: No abstract text available
Text: DATA SHEET NEC / MOS INTEGRATED CIRCUIT / /¿PD 42S16400L,4216400L,42S17400L,4217400L 3.3 V OPERATION 16 M-BIT DYNAMIC RAM 4 M-WORD BY 4-BIT, FAST PAGE MODE Description The /¿PD42S16400L, 4216400L, 42S17400L, 4217400L are 4,194,304 words by 4 bits dynamic CMOS RAMs. The
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PD42S16400L,
4216400L,
42S17400L,
4217400L
tPD42S16400L,
42S17400L
26-pln
26-pin
b427525
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Untitled
Abstract: No abstract text available
Text: DATA SHEET MOS INTEGRATED CIRCUIT F/ iPD42S16400L, 4216400L, 42S17400L, 4217400L 3.3 V OPERATION 16 M-BIT DYNAMIC RAM 4 M-WORD BY 4-BIT, FAST PAGE MODE a DESCRIPTION The /¿PD42S16400L, 4216400L, 42S17400L, 4217400L are 4 194 304 words by 4 bits dynamic CMOS RAMs.
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/iPD42S16400L,
4216400L,
42S17400L,
PD42S16400L,
4217400L
uPD42S16400L
42S17400L
26-pin
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Untitled
Abstract: No abstract text available
Text: DATA SHEET NEC / MOS INTEGRATED CIRCUIT / /¿PD42S16400L, 4216400L, 42S17400L, 4217400L 3.3 V OPERATION 16 M-BIT DYNAMIC RAM 4 M-WORD BY 4-BIT, FAST PAGE MODE D e s c r ip tio n T h e /¿PD 42S16400L, 42 1 6400L, 42S 17400 L, 4 2 1 740 0 L are 4 ,1 94,304 w o rd s by 4 bits dyna m ic C M O S R A M s. T he
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uPD42S16400L
uPD4216400L
uPD42S17400L
uPD4217400L
42S16400L,
6400L,
26-pin
VP15-207-2
IR35-207-2
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NEC uPD 688
Abstract: UPD4217400LG3-A60
Text: DATA SHEET NEC / MOS INTEGRATED CIRCUIT / //PD42S16400L, 4216400L, 42S17400L, 4217400L 3.3 V OPERATION 16 M-BIT DYNAMIC RAM 4 M-WORD BY 4-BIT, FAST PAGE MODE Description The ¿/PD42S16400L, 4216400L, 42S17400L, 4217400L are 4,194,304 words by 4 bits CMOS dynamic RAMs, The
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uPD42S16400L
uPD4216400L
uPD42S17400L
uPD4217400L
/PD42S16400L,
4216400L,
42S17400L,
4217400L
42S17400L
NEC uPD 688
UPD4217400LG3-A60
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6400L-A5G
Abstract: d4216400
Text: DATA SHEET NEC / MOS INTEGRATED CIRCUIT / ¿¿PD42S16400L, 4216400L, 42S17400L, 4217400L 3.3 V OPERATION 16 M-BIT DYNAMIC RAM 4 M-WORD B Y 4-BIT, F A S T P A G E M ODE Description The /iPD42S16400L, 4216400L, 42S17400L, 4217400L are 4,194,304 words by 4 bits CMOS dynamic RAMs. The
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uPD42S16400L
uPD4216400L
uPD42S17400L
uPD4217400L
/iPD42S16400L,
4216400L,
42S17400L,
4217400L
JUPD42S16400L,
42S17400L
6400L-A5G
d4216400
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Untitled
Abstract: No abstract text available
Text: DATA SHEET M O S INTEGRATED CIRCUIT MC-424000AC72F 4 M-WORD BY 72-BIT DYNAMIC RAM MODULE FAST PAGE MODE ECC Description The MC-424000AC72F is a 4,194,304 w ords by 72 bits dynamic R A M module on which 18 pieces of 16 M DRA M : ¿PD4216400 are assembled.
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MC-424000AC72F
72-BIT
MC-424000AC72F
tPD4216400
MC-424000AC72-60
MC-424000AC72-70
M1S8S-50A2
mS7525
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Untitled
Abstract: No abstract text available
Text: DATA SHEET NEC / MOS INTEGRATED CIRCUIT / MC-424000AC72F 4 M-WORD BY 72-BIT DYNAMIC RAM M ODULE FA ST PAGE M ODE ECC D escrip tio n The MC-424000AC72F is a 4,194,304 w ords by 72 bits dynamic RAM module on which 18 pieces of 16 M DRAM: PD4216400 are assem bled.
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MC-424000AC72F
72-BIT
MC-424000AC72F
juPD4216400
MC-424000AC72-60
M168S-50A2
D0SA23S
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Untitled
Abstract: No abstract text available
Text: DATA SHEET NEC / MOS INTEGRATED CIRCUIT / MC-424000AC72F 4 M -W ORD BY 72-BIT DYNAM IC RAM MODULE FAST PAGE MODE ECC D escription The M C -424000AC72F is a 4,194,304 w o rd s by 72 b its d y n a m ic R AM m o d u le on w h ic h 18 pieces o f 16 M DR AM : ¿PD4216400 are assem bled.
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MC-424000AC72F
72-BIT
MC-424000AC72F
uPD4216400
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nec 4217400
Abstract: PD4217400
Text: SEC PD4216400, 4217400 4,194,304 X 4-Bit Dynamic C M O S RAM NEC Electronics Inc. Description The PD4216400 and the /ljPD4217400 are fast-page dynam ic RAMs organized as 4,194,304 words by 4 bits and designed to operate from a single + 5 -vo lt power supply. Advanced polycide technology m inim izes sili
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OCR Scan
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uPD4216400
juPD4216400
/ljPD4217400
JIPD4216400,
ffPD4216400,
fiPD4216400,
nec 4217400
PD4217400
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L42S
Abstract: No abstract text available
Text: NEC MOS INTEGRATED CIRCUIT /¿PD42S16400L, 4216400L, 42S17400L, 4217400L 3.3 V OPERATION 16 M-BIT DYNAMIC RAM 4 M-WORD BY 4-BIT, FAST PAGE MODE DESCRIPTION T h e ¿¿PD42S16400L, 4 216400L, 42S 17 4 00 L , 4 217400L are 4 194 304 w o r d s b y 4 b its d y n a m ic C M O S R A M s.
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uPD42S16400L
uPD4216400L
uPD42S17400L
uPD4217400L
PD42S16400L,
216400L,
217400L
PD42S17400L
L42S
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nec 4216400
Abstract: 7400g PD4216400
Text: DATA SHEET NEC / MOS INTEGRATED CIRCUIT _ /¡uPD42S16400,4216400,42S17400,4217400 16 M-BIT DYNAMIC RAM 4 M-WORD BY 4-BIT, FAST PAGE MODE Description The JJPD42S16400, 4216400, 42S17400, 4217400 are 4,194,304 words by 4 bits CMOS dynamic RAMs. The fast page mode capability realize high speed access and low power consumption.
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OCR Scan
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uPD42S16400
uPD4216400
uPD42S17400
uPD4217400
JJPD42S16400,
42S17400,
PD42S16400,
42S17400
26-pin
nec 4216400
7400g
PD4216400
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Untitled
Abstract: No abstract text available
Text: USER'S MANUAL NEC Document No. M10339EJ2V0UMU1 491 [MEMO] 492 INTRODUCTION Purpose This manual is intended for users who understand DRAM functions and design applica tion systems using DRAMs. Readers This manual explains the basic properties of DRAM and their use.
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M10339EJ2V0UMU1
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nec 28 pin
Abstract: 4217400-60 DGS22
Text: MOS INTEGRATED CIRCUIT f/¿PD42S16400 ,4216400,42S17400,4217400 16 M-BIT DYNAMIC RAM 4 M-WORD BY 4-BIT, FAST PAGE MODE DESCRIPTION T he ¿iPD42S 16400, 4216400, 42S17400, 4217400 are 4 194 304 w o rd s by 4 bits d y n a m ic CMOS RAMs. These d iffe r in refresh cycle and the ¿¿PD42S16400, 42S17400 can execute CAS before RAS se lf refresh and
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uPD42S16400
uPD4216400
uPD42S17400
uPD4217400
iPD42S
42S17400,
PD42S16400,
42S17400
//PD42S16400,
nec 28 pin
4217400-60
DGS22
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41C464
Abstract: 41C1000 TC55B8128 424170 NEC CY70199 44C1000 IOT7164 HN62308BP HN62404P TC5116100
Text: MEM ORY ICs CRO SS REFERENCE GUIDE 3. C R O SS REFERENCE GUIDE 3.1 DRAM Density 25 6 K Org. X 1 X 4 1M X 1 X 4 4M X 1 X 4 x8 16M M ode Sa m su n g F. Page KM 41C256 TC 51256 N ibble KM 41C257 TC 51257 S. C o lu m n KM 41C258 TC 51258 H M 51 258 MB81258 F. Page
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41C256
41C257
41C258
41C464
41C466
41C1000
41C1002
44C256
44C258
41C4000
TC55B8128
424170 NEC
CY70199
44C1000
IOT7164
HN62308BP
HN62404P
TC5116100
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