Untitled
Abstract: No abstract text available
Text: !D monolithic 13 NPN phototransistor array EEEEEEEEEEEEEEEECFCA93298C Optical device consisting of a monolithic 13 silicon NPN phototransistor array chip with high gain uniformity for the output signals. The active area of each phototransistor is 0.2 x 0.45
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13-bits
030mm
12234556667832897A8B5C
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phototransistor array
Abstract: Optolab OL2013R phototransistor datasheet ET8001 OL2013R OL8110 OPTOLAB
Text: OL2013R 13 Element SMD Phototransistor Array Features • • • • • High speed phototransistor OL8110 chips Reference holes for precise mounting Compact size and low cost Custom design available Single chip placement for high speed applications Application
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OL2013R
OL8110
ET8001,
phototransistor array
Optolab OL2013R
phototransistor datasheet
ET8001
OL2013R
OPTOLAB
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PDF
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phototransistor array
Abstract: ET8001 Phototransistor-Array phototransistor datasheet OL2006 OL8110
Text: OL2006 6 Element SMD Phototransistor Array Features • • • • • • High speed phototransistor OL8110 chips Reference holes for precise mounting Compact size and low cost Also available with mounted reticle Custom design available Single chip placement for high speed applications
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OL2006
OL8110
phototransistor array
ET8001
Phototransistor-Array
phototransistor datasheet
OL2006
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PDF
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phototransistor array
Abstract: phototransistor datasheet Phototransistor-Array ET8001 OL2013R OL8110 Optolab ERFURT
Text: OL2013R 13 Element SMD Phototransistor Array with factory pre-mounted reticle Features • • • • • High speed phototransistor OL8110 chips Reference holes for precise mounting Compact size and low cost Custom design available Single chip placement for high speed applications
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OL2013R
OL8110
phototransistor array
phototransistor datasheet
Phototransistor-Array
ET8001
OL2013R
Optolab
ERFURT
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PDF
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phototransistor array
Abstract: OL2009 OL8110 Optolab DSASW0031987 phototransistor datasheet ET8001
Text: OL2009 9-Element SMD Phototransistor Array Features • • • • • • High speed phototransistor OL8110 chips Reference holes for precise mounting Compact size and low cost Also available with mounted reticle Custom design available Single chip placement for high speed applications
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OL2009
OL8110
phototransistor array
OL2009
Optolab
DSASW0031987
phototransistor datasheet
ET8001
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PDF
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OL2009
Abstract: OL8110 phototransistor datasheet ET8001 photo-transistor OPTOLAB
Text: OL2009 9-Element SMD Phototransistor Array Features • • • • • • High speed phototransistor OL8110 chips Reference holes for precise mounting Compact size and low cost Also available with mounted reticle Custom design available Single chip placement for high speed applications
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OL2009
OL8110
ET8001,
OL2009
phototransistor datasheet
ET8001
photo-transistor
OPTOLAB
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PDF
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phototransistor array
Abstract: MULTI TURN OL2006 phototransistor datasheet ET8001 OL8110 Optolab
Text: OL2006 6 Element SMD Phototransistor Array Features • • • • • • High speed phototransistor OL8110 chips Reference holes for precise mounting Compact size and low cost Also available with mounted reticle Custom design available Single chip placement for high speed applications
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OL2006
OL8110
ET8001,
phototransistor array
MULTI TURN
OL2006
phototransistor datasheet
ET8001
Optolab
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PDF
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phototransistor array
Abstract: OL8110 edge-detection OL2013 phototransistor datasheet ET8001 Optolab
Text: OL2013 13 Element SMD Phototransistor Array Features • • • • • • High speed phototransistor OL8110 chips Reference holes for precise mounting Compact size and low cost Also available with mounted reticle Custom design available Single chip placement for high speed applications
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OL2013
OL8110
phototransistor array
edge-detection
OL2013
phototransistor datasheet
ET8001
Optolab
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PDF
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phototransistor array
Abstract: phototransistor datasheet ET8001 OL2013 OL8110
Text: OL2013 13 Element SMD Phototransistor Array Features • • • • • • High speed phototransistor OL8110 chips Reference holes for precise mounting Compact size and low cost Also available with mounted reticle Custom design available Single chip placement for high speed applications
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OL2013
OL8110
ET8001,
phototransistor array
phototransistor datasheet
ET8001
OL2013
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PDF
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WPT-1CL3H
Abstract: wpt1cl3h Rise time of photo transistor phototransistor array
Text: Photo Transistor Waitrony Module No.: WPT-1CL3H 1. General Description: WPT-1CL3H is a high sensitivity NPN silicon phototransistor mounted in a 03mm low-cost ceramic package. This small phototransistor is designed for use as low-cost detector array in consumer and industrial applications.
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PH101
Abstract: No abstract text available
Text: SEC PHOTO TRANSISTOR ELECTRON DEVICE PH101 NPN EPITAXIAL DARLINGTON PHOTOTRANSISTOR PHOTO DETECTOR -N E P O C SERIES - DESCRIPTION The PH101 is a miniature NPN sillicon phototransistor having exceptionally stable characteristics and high illuminance sensiti
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PH101
PH101
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Untitled
Abstract: No abstract text available
Text: BPW16N Vishay Telefunken Silicon NPN Phototransistor Description BPW16N is a silicon NPN epitaxial planar phototransistor in a miniature plastic case with flat window. With a lead center to center spacing of 2.54mm and a package width of 2.4mm the devices are easily stackable on PC boards and assembled to arrays of
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BPW16N
BPW16N
CQY36N
D-74025
20-May-99
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BPW16N
Abstract: CQY36N
Text: BPW16N Vishay Semiconductors Silicon NPN Phototransistor Description BPW16N is a silicon NPN epitaxial planar phototransistor in a miniature plastic case with flat window. With a lead center to center spacing of 2.54mm and a package width of 2.4mm the devices are easily stackable on PC boards and assembled to arrays of
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BPW16N
BPW16N
CQY36N
D-74025
20-May-99
CQY36N
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BPW16N
Abstract: CQY36N
Text: BPW16N Vishay Telefunken Silicon NPN Phototransistor Description BPW16N is a silicon NPN epitaxial planar phototransistor in a miniature plastic case with flat window. With a lead center to center spacing of 2.54mm and a package width of 2.4mm the devices are easily stackable on PC boards and assembled to arrays of
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BPW16N
BPW16N
CQY36N
D-74025
20-May-99
CQY36N
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PDF
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Untitled
Abstract: No abstract text available
Text: SIEMENS SFH320 SFH320F DAYLIGHT FILTER NPN Silicon Phototransistor SMT-TOPLED Package Dimensions in Inches mm FEATURES Maximum Ratings * NPN Silicon Phototransistor Operating & Storage Temperature Hop, Tstg) . -5 5 to +100°C Collector-Emitter Voltage (VCE) . 35 V
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OCR Scan
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SFH320
SFH320F
ty-SFH320
FH320F
SFH320/F
023b35b
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PDF
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Untitled
Abstract: No abstract text available
Text: SIEMENS SFH320 SFH320F DAYLIGHT FILTER NPN Silicon Phototransistor SMT-TOPLËD FEATURES • NPN Silicon Phototransistor • Daylight Filter C>ption-SFH320F • Suitable for Vapor-Phase Reflow, Infrared Reflow, Wave Solder Processes • Compatible with Automatic Placement
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SFH320
SFH320F
ption-SFH320F
SFH420-SMTIRED
itivity-SFH320
sentitivlty-SFH320F
SFH320/F
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PDF
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phototransistor 3F
Abstract: tOSHIBA TMC7 HD74HC139 HD74LS240 TLN103A TPS603A
Text: APPLICATION NOTE H8/300L SLP Series Connecting a Phototransistor Introduction A phototransistor is connected to the analog input pin, and the results of A/D conversion are displayed on sevensegment LEDs. Target Device H8/38024 Contents 1. Specifications . 2
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H8/300L
H8/38024
REJ06B0286-0100Z/Rev
phototransistor 3F
tOSHIBA TMC7
HD74HC139
HD74LS240
TLN103A
TPS603A
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BPW17
Abstract: ic 8243 BPW17N CQY37N infrared 950nm
Text: BPW17N Vishay Telefunken Silicon NPN Phototransistor Description BPW17N is a silicon NPN epitaxial planar phototransistor in a miniature plastic case with a ± 12° lens. With a lead center to center spacing of 2.54mm and a package width of 2.4mm the devices are easily stackable on PC boards and assembled to arrays of
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BPW17N
BPW17N
D-74025
20-May-99
BPW17
ic 8243
CQY37N
infrared 950nm
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CQY36
Abstract: BPW16N BPW16
Text: BPW16N Silicon NPN Phototransistor Description BPW16N is a silicon NPN epitaxial planar phototransistor in a miniature plastic case with flat window. With a lead center to center spacing of 2.54mm and a package width of 2.4mm the devices are easily stackable
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BPW16N
BPW16N
D-74025
15-Jul-96
CQY36
BPW16
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BPW16N
Abstract: CQY 24
Text: TELEFUNKEN Semiconductors BPW 16 N Silicon NPN Phototransistor Description BPW16N is a silicon NPN epitaxial planar phototransistor in a miniature plastic case with flat window. With a lead center to center spacing of 2.54mm and a package width of 2.4mm the devices are
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BPW16N
D-74025
CQY 24
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8239
Abstract: BPW17 BPW17N CQY37N
Text: BPW17N Vishay Telefunken Silicon NPN Phototransistor Description BPW17N is a silicon NPN epitaxial planar phototransistor in a miniature plastic case with a ± 12° lens. With a lead center to center spacing of 2.54mm and a package width of 2.4mm the devices are easily stackable on PC boards and assembled to arrays of
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BPW17N
BPW17N
D-74025
20-May-99
8239
BPW17
CQY37N
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PDF
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Untitled
Abstract: No abstract text available
Text: BPW17N Vishay Telefunken Silicon NPN Phototransistor Description BPW17N is a silicon NPN epitaxial planar phototransistor in a miniature plastic case with a ± 12° lens. With a lead center to center spacing of 2.54mm and a package width of 2.4mm the devices are easily stackable on PC boards and assembled to arrays of
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BPW17N
BPW17N
CQY37N
D-74025
20-May-99
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PDF
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BPW17N
Abstract: CQY37N
Text: BPW17N Vishay Semiconductors Silicon NPN Phototransistor Description BPW17N is a silicon NPN epitaxial planar phototransistor in a miniature plastic case with a ± 12° lens. With a lead center to center spacing of 2.54mm and a package width of 2.4mm the devices are easily stackable on PC boards and assembled to arrays of
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BPW17N
BPW17N
D-74025
20-May-99
CQY37N
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8239
Abstract: 8257 ic 8255 phototransistor, 850nm S350P
Text: S350P Silicon NPN Phototransistor Description S350P is a high sensitive silicon NPN epitaxial planar phototransistor in a miniature plastic case with flat window. With a lead center–to–center spacing of 2.54mm and a package width of 2.4mm the devices are easily stackable
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S350P
S350P
850nm.
D-74025
15-Jul-96
8239
8257
ic 8255
phototransistor, 850nm
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