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    PHOTOTRANSISTOR PEAK 550 NM Search Results

    PHOTOTRANSISTOR PEAK 550 NM Result Highlights (5)

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    HIP4082IPZ Renesas Electronics Corporation 80V/1.25A Peak Current Full Bridge FET Driver Visit Renesas Electronics Corporation
    ISL2100AAR3Z-T Renesas Electronics Corporation 100V, 2A Peak, High Frequency Half-Bridge Drivers Visit Renesas Electronics Corporation
    ISL2101AAR3Z-T Renesas Electronics Corporation 100V, 2A Peak, High Frequency Half-Bridge Drivers Visit Renesas Electronics Corporation
    ISL89401ABZ Renesas Electronics Corporation 100V, 1.25A Peak, High Frequency Half-Bridge Drivers Visit Renesas Electronics Corporation
    ISL2101AABZ Renesas Electronics Corporation 100V, 2A Peak, High Frequency Half-Bridge Drivers Visit Renesas Electronics Corporation

    PHOTOTRANSISTOR PEAK 550 NM Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    phototransistor peak 550 nm

    Abstract: Fototransistor phototransistor 550 nm phototransistor 650 nm IC 9260 GEO06840 OHM02257 OHF00601
    Text: Reflexlichtschranke mit 660 nm - Emitter und Fototransistor - Detektor Reflective Interrupter with 660 nm - Emitter and Phototransistor - Detector SFH 9260 Wesentliche Merkmale • Roter Emitter 660 nm • Silizium Fototransistor • Geringe Sättigungsspannung


    Original     		PDF GEO06840 phototransistor peak 550 nm Fototransistor phototransistor 550 nm phototransistor 650 nm IC 9260 GEO06840 OHM02257 OHF00601

    9260 transistor

    Abstract: No abstract text available
    Text: SFH 9260 Reflexlichtschranke mit 660 nm - Emitter und Fototransistor - Detektor Reflective Interrupter with 660 nm - Emitter and Phototransistor - Detector 6.2 5.8 3.4 3.0 4.2 3.8 2.1 1.7 0.0.1 0.15 0.13 Vorläufige Daten/Preliminary Data 0.5 0.3 6 5 4 1


    Original     		PDF GEO06840 sfh9260 OHF00499 OHO02260 9260 transistor

    fototransistor

    Abstract: phototransistor peak 550 nm phototransistor 600 nm GEOY6840 OHM02257 OHF00601 lichtschranken-anwendungen 9260 transistor phototransistor 650 nm TP 9260
    Text: Reflexlichtschranke mit 660 nm - Emitter und Fototransistor - Detektor Reflective Interrupter with 660 nm - Emitter and Phototransistor - Detector SFH 9260 Wesentliche Merkmale • Roter Emitter 660 nm • Silizium Fototransistor • Geringe Sättigungsspannung


    Original     		PDF GEOY6840 fototransistor phototransistor peak 550 nm phototransistor 600 nm GEOY6840 OHM02257 OHF00601 lichtschranken-anwendungen 9260 transistor phototransistor 650 nm TP 9260

    phototransistor 650 nm

    Abstract: Q62702-P1634 fototransistor led c 331 transistor transistor d 331 331 transistor
    Text: SMT Multi TOPLED SFH 331 Wesentliche Merkmale • SMT-Gehäuse mit rotem Sender 635 nm und Si-Fototransistor • Geeignet für SMT-Bestückung • Gegurtet lieferbar • Sender und Empfänger getrennt ansteuerbar • Geeignet für IR-Reflow Löten Features


    Original     		PDF Q62702-P1634 OHF01924 GPL06924 phototransistor 650 nm Q62702-P1634 fototransistor led c 331 transistor transistor d 331 331 transistor

    fototransistor

    Abstract: phototransistor peak 550 nm fototransistor led
    Text: 2009-03-05 SMT Multi TOPLED SMT Multi TOPLED Version 1.0 SFH 331 Features: Besondere Merkmale: • SMT package with red emitter 635 nm and Si-phototransistor • Suitable for SMT assembly • Available on tape and reel • Emitter and detector can be controlled separately


    Original     		PDF 331-JK Q65110A2821 D-93055 fototransistor phototransistor peak 550 nm fototransistor led

    transistor h 331

    Abstract: c 331 transistor 331 transistor switching transistor 331 phototransistor 650 nm transistor 331 d 331 Transistor Q62702-P1634 phototransistor 550 nm phototransistor peak 550 nm
    Text: SMT Multi TOPLED SFH 331 Wesentliche Merkmale • SMT-Gehäuse mit rotem Sender 635 nm und Si-Fototransistor • Geeignet für SMT-Bestückung • Gegurtet lieferbar • Sender und Empfänger getrennt ansteuerbar • Geeignet für IR-Reflow Löten Features


    Original     		PDF 331-JK Q62702-P1634 GPLY6924 transistor h 331 c 331 transistor 331 transistor switching transistor 331 phototransistor 650 nm transistor 331 d 331 Transistor Q62702-P1634 phototransistor 550 nm phototransistor peak 550 nm

    transistor d-331

    Abstract: No abstract text available
    Text: SMT Multi TOPLED Lead Pb Free Product - RoHS Compliant SFH 331 Wesentliche Merkmale Features • SMT-Gehäuse mit rotem Sender (635 nm) und Si-Fototransistor • Geeignet für SMT-Bestückung • Gegurtet lieferbar • Sender und Empfänger getrennt ansteuerbar


    Original     		PDF 331-JK Q65110A2821 transistor d-331

    transistor d 331

    Abstract: D F 331 TRANSISTOR d 331 TRANSISTOR equivalent switching transistor 331 Q62702-P1634 phototransistor 650 nm phototransistor peak 550 nm transistor d 331 data c 331 transistor transistor C 331
    Text: SMT Multi TOPLED SFH 331 Wesentliche Merkmale Features • SMT-Gehäuse mit rotem Sender 635 nm und Si-Fototransistor • Geeignet für SMT-Bestückung • Gegurtet lieferbar • Sender und Empfänger getrennt ansteuerbar • Geeignet für IR-Reflow Löten


    Original     		PDF 331-JK Q62702-P1634 transistor d 331 D F 331 TRANSISTOR d 331 TRANSISTOR equivalent switching transistor 331 Q62702-P1634 phototransistor 650 nm phototransistor peak 550 nm transistor d 331 data c 331 transistor transistor C 331

    phototransistor 650 nm

    Abstract: No abstract text available
    Text: SMT Multi TOPLED Lead Pb Free Product - RoHS Compliant SFH 331 Wesentliche Merkmale Features • SMT-Gehäuse mit rotem Sender (635 nm) und Si-Fototransistor • Geeignet für SMT-Bestückung • Gegurtet lieferbar • Sender und Empfänger getrennt ansteuerbar


    Original     		PDF 331-JK Q65110A2821 phototransistor 650 nm

    phototransistor 650 nm

    Abstract: phototransistor peak 550 nm
    Text: SMT Multi TOPLED Lead Pb Free Product - RoHS Compliant SFH 331 Wesentliche Merkmale Features • SMT-Gehäuse mit rotem Sender (635 nm) und Si-Fototransistor • Geeignet für SMT-Bestückung • Gegurtet lieferbar • Sender und Empfänger getrennt ansteuerbar


    Original     		PDF 331-JK Q65110A2821 2006-0y phototransistor 650 nm phototransistor peak 550 nm

    Untitled

    Abstract: No abstract text available
    Text: SMT Multi TOPLED Lead Pb Free Product - RoHS Compliant SFH 331 Wesentliche Merkmale Features • SMT-Gehäuse mit rotem Sender (635 nm) und Si-Fototransistor • Geeignet für SMT-Bestückung • Gegurtet lieferbar • Sender und Empfänger getrennt ansteuerbar


    Original     		PDF

    fototransistor ir

    Abstract: phototransistor peak 550 nm
    Text: 2012-08-17 Multi TOPLED with LED and Phototransistor-Detector Multi TOPLED mit LED und Fototransistor-Detektor Version 1.0 SFH 7225 Features: Besondere Merkmale: • Display function can be controlled by built-in phototransistor • Yellow LED • Dominant wavelength: 589 nm


    Original     		PDF D-93055 fototransistor ir phototransistor peak 550 nm

    c 331 transistor

    Abstract: transistor d 331 331 transistor fototransistor led phototransistor 650 nm d 331 TRANSISTOR equivalent GPL06924 Q62702-P1634 switching transistor 331 transistor C 331
    Text: SMT Multi TOPLED SFH 331 3.0 2.6 2.3 2.1 0.9 0.7 3 C C E 0.1 typ 1.1 0.5 3.4 3.0 A 3.7 3.3 2 2.4 0.8 0.6 2.1 1.7 1 4 0.18 0.12 Package marking Emission color : super-red 0.6 0.4 GPL06924 Maβe in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified.


    Original     		PDF GPL06924 Q62702-P1634 IPCE/IPCE25o OHF00871 OHF01530 OHF01924 c 331 transistor transistor d 331 331 transistor fototransistor led phototransistor 650 nm d 331 TRANSISTOR equivalent GPL06924 Q62702-P1634 switching transistor 331 transistor C 331

    Untitled

    Abstract: No abstract text available
    Text: 0.8mm Height Flat Top Phototransistor PT19-21C/L41/TR8 Features ․Fast response time ․High photo sensitivity ․Small junction capacitance ․Pb free Descriptions ․PT19-21C/L41/TR8 is a phototransistor in miniature SMD package which is molded in a water clear with flat top view lens.


    Original     		PDF PT19-21C/L41/TR8 PT19-21C/L41/TR8 DPT-0000292

    Untitled

    Abstract: No abstract text available
    Text: Vishay Intertechnology, Inc. Automotive Body Electronics One of the World’s Largest Manufacturers of Discrete Semiconductors and Passive Components AUTOMOTIVE Automotive Body Electronics More information on the Engineer’s Toolbox, including product datasheet links, can be found at www.vishay.com/ref/et3.


    Original     		PDF NTCS6030E3. SQS840EN AEC-Q200 AEC-Q101 AEC-Q200-qualified VMN-MS6980-1411-AUBO

    fototransistor led

    Abstract: fototransistor phototransistor 650 nm led fototransistor 7226 phototransistor 600 nm rote LED OHF01121
    Text: Multi TOPLED mit LED und Fototransistor-Detektor Multi TOPLED with LED and Phototransistor-Detector SFH 7225 SFH 7226 Wesentliche Merkmale • Anzeigefunktion kann durch eingebauten Fototransistor überwacht werden • SFH 7225: gelbe LED • SFH 7226: super-rote LED


    Original     		PDF GPLY6924 fototransistor led fototransistor phototransistor 650 nm led fototransistor 7226 phototransistor 600 nm rote LED OHF01121

    sfh9260

    Abstract: No abstract text available
    Text: SIEMENS SFH 9260 Reflexlichtschranke mit 660 nm - Emitter und Fototransistor - Detektor Reflective Interrupter with 660 nm - Emitter and Phototransistor - Detector Vorläufige Daten/Preliminary Data 1 Type SFH 9260 Anode 2 3 - 4 Emitter Collector 5 6 - O O


    OCR Scan     		PDF Applic-16 SFH9260 sfh9260

    L 3005 TRANSISTOR

    Abstract: transistor 3005 2 transistor 3005 SI 3102 v NPN 200 VOLTS POWER TRANSISTOR photon coupled interrupter nte 3100 npn PHOTO GAP DETECTOR
    Text: typical NTE Type Number Description Typical Peak Emission Wavelength nm Typical Response Time (ns) Diagram Number Total External Radiated Power (mW) Po VF Vr If Pd Xp ton, toff 550|iW 1.5 3 50 75 900 10 Maximum Forward Voltage (Volts) Reverse Voltage (Volts)


    OCR Scan     		PDF

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS The BPX43 is an epitaxial NPN silicon planar phototransistor in a T018 18 A 3 DIN 41876 package with a glass lens. The collector is electrically connected to the metallic case. Sym. Value Unit ^S m a x 880 nm 450 to 1100 Spectral Sensitivity Range


    OCR Scan     		PDF BPX43 PCE25 BPX43

    D F 331 TRANSISTOR

    Abstract: No abstract text available
    Text: SIEM ENS SM T Multi TOPLED SFH 331 Maße in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified. Typ Type Bestellnummer Ordering Code S F H 331 Q 62702-P1634 Wesentliche Merkmale • Geeignet für V apor-Phase Löten und IR-Reflow Löten


    OCR Scan     		PDF 62702-P1634 /pCE//pCE250 D F 331 TRANSISTOR

    transistor h 331

    Abstract: D F 331 TRANSISTOR C 331 Transistor transistor d 331 d 331 Transistor transistor 331 p 331 transistor y 331 Transistor transistor 331 VQE 22 led
    Text: SIEMENS SMT Multi TOPLED SFH 331 Maße in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified. Typ Type Bestellnummer Ordering Code SFH 331 Q62702-P1634 W esentliche Merkmale • Geeignet für Vapor-Phase Löten und IR-Reflow Löten


    OCR Scan     		PDF Q62702-P1634 hotocurrent/pCE//pCE250 transistor h 331 D F 331 TRANSISTOR C 331 Transistor transistor d 331 d 331 Transistor transistor 331 p 331 transistor y 331 Transistor transistor 331 VQE 22 led

    Untitled

    Abstract: No abstract text available
    Text: SbE D • B O a O b O 1! 0 0 0 1 1 7 4 TIE « V C T V T T -C 4 0 .040" NPN Phototransistor Chip E G & G VACT EC DESCRIPTION ~ CHIP DIMENSIONS EG&G Vactec fabricates its silicon photosensor chips using state-of-the-art planar diffusion technology. All chips are


    OCR Scan     		PDF 2850K)

    Vactec

    Abstract: VTT-C40 phototransistor peak 550 nm Vactec 25
    Text: S bE D • 3Q3ÜLÜT 0001174 T12 M V C T .040" NPN Phototransistor Chip .*“' ^ ‘7 VTT-C40 E G & G VACTEC DESCRIPTION CHIP DIMENSIONS inch mm EG&G Vactec fabricates its silicon photosensor chips using state-of-the-art planar diffusion technology. All chips are


    OCR Scan     		PDF VTT-C40 Vactec VTT-C40 phototransistor peak 550 nm Vactec 25

    Phototransistor L14G3 application

    Abstract: L14F1 npn photo transistor L14G2 application note L14F1 phototransistor 2N5777 circuit using l14f1 H11A520 340 opto isolator L14F1 photo transistor 2n5777
    Text: OPTOELECTRONICS GE TYPE PAGE NO. LED55C LED55B LED56 LED55CF LED55BF LED56F 134] 1341 1341 1341 1341 1341 MIN. PO@ lp=100mA 5.4mW 3.5mW 1.5mW 5.4mW 3.5 mW 1.5mW INFRARED EMITTERS FALL MAX. PEAK EMISSION RISE TIME Vp @ WAVELENGTH TIME lp= 100mA TYP. n. METERS TYP. n. SEC. TYP. n. SEC.


    OCR Scan     		PDF 100mA LED55C LED55B LED56 LED55CF LED55BF LED56F l14g1 l14g2 Phototransistor L14G3 application L14F1 npn photo transistor L14G2 application note L14F1 phototransistor 2N5777 circuit using l14f1 H11A520 340 opto isolator L14F1 photo transistor 2n5777