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Abstract: No abstract text available
Text: FDMS86163P P-Channel PowerTrench MOSFET -100 V, -50 A, 22 mΩ Features General Description Max rDS on = 22 mΩ at VGS = -10 V, ID = -7.9 A Max rDS(on) = 30 mΩ at VGS = -6 V, ID = -5.9 A This P-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced PowerTrench® process that has
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FDMS86163P
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FDMS0310
Abstract: No abstract text available
Text: FDMS0310S N-Channel PowerTrench SyncFETTM 30 V, 42 A, 4 mΩ Features General Description The FDMS0310S has been designed to minimize losses in power conversion application. Advancements in both silicon and package technologies have been combined to offer the lowest
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FDMS0310S
FDMS0310S
FDMS0310
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Abstract: No abstract text available
Text: FDMS86263P P-Channel PowerTrench MOSFET -150 V, -22 A, 53 mΩ Features General Description Max rDS on = 53 mΩ at VGS = -10 V, ID = -4.4 A Max rDS(on) = 64 mΩ at VGS = -6 V, ID = -4 A Very low Rds-on in Mid-Voltage P-Channel silicon technology
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FDMS86263P
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Abstract: No abstract text available
Text: N-Channel PowerTrench SyncFETTM 25 V, 70 A, 1.8 mΩ Features General Description ̈ Max rDS on = 1.8 mΩ at VGS = 10 V, ID = 30 A This N-Channel SyncFETTM is produced using Fairchild Semiconductor’s advanced PowerTrench® process. Advancements in both silicon and package technologies have
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PQFN08A
Abstract: FDMS86101A
Text: FDMS86101A N-Channel PowerTrench MOSFET 100 V, 60 A, 8 mΩ Features General Description This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process thant has been especially tailored to minimize the on-state resistance and
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FDMS86101A
PQFN08A
FDMS86101A
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Abstract: No abstract text available
Text: N-Channel PowerTrench SyncFETTM 25 V, 70 A, 1.8 mΩ Features General Description Max rDS on = 1.8 mΩ at VGS = 10 V, ID = 30 A This N-Channel SyncFETTM is produced using Fairchild Semiconductor’s advanced PowerTrench® process. Advancements in both silicon and package technologies have
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FDMS8560S
FDMS8560S
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Abstract: No abstract text available
Text: FDMS86263P P-Channel PowerTrench MOSFET -150 V, -22 A, 53 mΩ Features General Description Max rDS on = 53 mΩ at VGS = -10 V, ID = -4.4 A Max rDS(on) = 64 mΩ at VGS = -6 V, ID = -4 A Very low Rds-on in Mid-Voltage P-Channel silicon technology
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FDMS86263P
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Abstract: No abstract text available
Text: FDMS7678 N-Channel Power Trench MOSFET 30 V, 26 A, 5.5 mΩ Features General Description ̈ Max rDS on = 5.5 mΩ at VGS = 10 V, ID = 17.5 A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance. This
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FDMS7678
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MO-240
Abstract: No abstract text available
Text: FDMS8018 N-Channel PowerTrench MOSFET 30 V, 120 A, 1.8 mΩ Features General Description ̈ Max rDS on = 1.8 mΩ at VGS = 10 V, ID = 30 A ̈ Max rDS(on) = 2.4 mΩ at VGS = 4.5 V, ID = 26 A This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node
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FDMS8018
MO-240
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RCA 900 mhz speakers
Abstract: No abstract text available
Text: N-Channel PowerTrench SyncFETTM 25 V, 90 A, 1.5 mΩ Features General Description Max rDS on = 1.5 mΩ at VGS = 10 V, ID = 33 A This N-Channel SyncFETTM is produced using Fairchild Semiconductor’s advanced PowerTrench® process. Advancements in both silicon and package technologies have
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FDMS8558S
FDMS8558S
RCA 900 mhz speakers
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FDMS86310
Abstract: No abstract text available
Text: FDMS86310 N-Channel PowerTrench MOSFET 80 V, 50 A, 4.8 mΩ Features General Description Max rDS on = 4.8 mΩ at VGS = 10 V, ID = 17 A This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node ringing of DC/DC converters using either synchronous or
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FDMS86310
FDMS86310
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PQFN08A
Abstract: FDMS8660S
Text: FDMS8660S N-Channel PowerTrench SyncFETTM 30V, 40A, 2.4mΩ Features tm General Description The FDMS8660S has been designed to minimize losses in power conversion applications. Advancements in both silicon and package technologies have been combined to offer the
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FDMS8660S
FDMS8660S
PQFN08A
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MO-240
Abstract: FDMS86101
Text: FDMS86101 N-Channel PowerTrench MOSFET 100 V, 60 A, 8 mΩ Features General Description This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process thant has been especially tailored to minimize the on-state resistance and
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FDMS86101
FDMS86101
MO-240
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Abstract: No abstract text available
Text: FDMS8018 N-Channel PowerTrench MOSFET 30 V, 49 A, 1.8 mΩ Features General Description Max rDS on = 1.8 mΩ at VGS = 10 V, ID = 30 A Max rDS(on) = 2.4 mΩ at VGS = 4.5 V, ID = 26 A This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node
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FDMS8018
FDMS8018
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Untitled
Abstract: No abstract text available
Text: FDMS86310 N-Channel PowerTrench MOSFET 80 V, 50 A, 4.8 mΩ Features General Description ̈ Max rDS on = 4.8 mΩ at VGS = 10 V, ID = 17 A This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node ringing of DC/DC converters using either synchronous or
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FDMS86310
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Abstract: No abstract text available
Text: FDMS86252L N-Channel Shielded Gate PowerTrench MOSFET 150 V, 12 A, 56 mΩ Features General Description This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that incorporates Shielded Gate technology. This process has been
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FDMS86252L
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Untitled
Abstract: No abstract text available
Text: FDMS7678 N-Channel Power Trench MOSFET 30 V, 26 A, 5.5 mΩ Features General Description Max rDS on = 5.5 mΩ at VGS = 10 V, ID = 17.5 A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance. This
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FDMS7678
FDMS7678
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FDMS8018
Abstract: MO-240
Text: FDMS8018 N-Channel PowerTrench MOSFET 30 V, 120 A, 1.8 mΩ Features General Description Max rDS on = 1.8 mΩ at VGS = 10 V, ID = 30 A Max rDS(on) = 2.4 mΩ at VGS = 4.5 V, ID = 26 A This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node
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FDMS8018
FDMS8018
MO-240
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PQFN08A
Abstract: No abstract text available
Text: FDMS86320 N-Channel PowerTrench MOSFET 80 V, 44 A, 11.7 mΩ Features General Description Max rDS on = 11.7 mΩ at VGS = 10 V, ID = 10.5 A This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node
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FDMS86320
PQFN08A
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PQFN08AREV6
Abstract: FDMS FDMS86101
Text: FDMS86101 N-Channel PowerTrench MOSFET 100 V, 60 A, 8 mΩ Features General Description This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process thant has been especially tailored to minimize the on-state resistance and
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FDMS86101
PQFN08AREV6
FDMS
FDMS86101
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Untitled
Abstract: No abstract text available
Text: FDMS0309AS N-Channel PowerTrench SyncFETTM 30 V, 49 A, 3.5 mΩ Features General Description The FDMS0309AS has been designed to minimize losses in power conversion application. Advancements in both silicon and package technologies have been combined to offer the lowest
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FDMS0309AS
FDMS0309AS
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Abstract: No abstract text available
Text: N-Channel PowerTrench SyncFETTM 25 V, 60 A, 2.8 mΩ Features General Description ̈ Max rDS on = 2.8 mΩ at VGS = 10 V, ID = 24 A This N-Channel SyncFETTM is produced using Fairchild Semiconductor’s advanced PowerTrench® process. Advancements in both silicon and package technologies have
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FDMS86101
Abstract: No abstract text available
Text: FDMS86101 N-Channel PowerTrench MOSFET 100 V, 60 A, 8 mΩ Features General Description This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process thant has been especially tailored to minimize the on-state resistance and
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FDMS86101
FDMS86101
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Abstract: No abstract text available
Text: FDMS86520L N-Channel PowerTrench MOSFET 60 V, 22 A, 8.2 mΩ Features General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node ringing of DC/DC converters using either synchronous or
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