FDMS0310
Abstract: No abstract text available
Text: FDMS0310S N-Channel PowerTrench SyncFETTM 30 V, 42 A, 4 mΩ Features General Description The FDMS0310S has been designed to minimize losses in power conversion application. Advancements in both silicon and package technologies have been combined to offer the lowest
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FDMS0310S
FDMS0310S
FDMS0310
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Untitled
Abstract: No abstract text available
Text: FDMS86263P P-Channel PowerTrench MOSFET -150 V, -22 A, 53 mΩ Features General Description Max rDS on = 53 mΩ at VGS = -10 V, ID = -4.4 A Max rDS(on) = 64 mΩ at VGS = -6 V, ID = -4 A Very low Rds-on in Mid-Voltage P-Channel silicon technology
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FDMS86263P
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Untitled
Abstract: No abstract text available
Text: N-Channel PowerTrench SyncFETTM 25 V, 70 A, 1.8 mΩ Features General Description ̈ Max rDS on = 1.8 mΩ at VGS = 10 V, ID = 30 A This N-Channel SyncFETTM is produced using Fairchild Semiconductor’s advanced PowerTrench® process. Advancements in both silicon and package technologies have
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PQFN08A
Abstract: FDMS86101A
Text: FDMS86101A N-Channel PowerTrench MOSFET 100 V, 60 A, 8 mΩ Features General Description This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process thant has been especially tailored to minimize the on-state resistance and
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FDMS86101A
PQFN08A
FDMS86101A
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Untitled
Abstract: No abstract text available
Text: N-Channel PowerTrench SyncFETTM 25 V, 70 A, 1.8 mΩ Features General Description Max rDS on = 1.8 mΩ at VGS = 10 V, ID = 30 A This N-Channel SyncFETTM is produced using Fairchild Semiconductor’s advanced PowerTrench® process. Advancements in both silicon and package technologies have
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FDMS8560S
FDMS8560S
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Untitled
Abstract: No abstract text available
Text: FDMS86263P P-Channel PowerTrench MOSFET -150 V, -22 A, 53 mΩ Features General Description Max rDS on = 53 mΩ at VGS = -10 V, ID = -4.4 A Max rDS(on) = 64 mΩ at VGS = -6 V, ID = -4 A Very low Rds-on in Mid-Voltage P-Channel silicon technology
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FDMS86263P
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Untitled
Abstract: No abstract text available
Text: FDMS7678 N-Channel Power Trench MOSFET 30 V, 26 A, 5.5 mΩ Features General Description ̈ Max rDS on = 5.5 mΩ at VGS = 10 V, ID = 17.5 A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance. This
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FDMS7678
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MO-240
Abstract: No abstract text available
Text: FDMS8018 N-Channel PowerTrench MOSFET 30 V, 120 A, 1.8 mΩ Features General Description ̈ Max rDS on = 1.8 mΩ at VGS = 10 V, ID = 30 A ̈ Max rDS(on) = 2.4 mΩ at VGS = 4.5 V, ID = 26 A This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node
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FDMS8018
MO-240
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RCA 900 mhz speakers
Abstract: No abstract text available
Text: N-Channel PowerTrench SyncFETTM 25 V, 90 A, 1.5 mΩ Features General Description Max rDS on = 1.5 mΩ at VGS = 10 V, ID = 33 A This N-Channel SyncFETTM is produced using Fairchild Semiconductor’s advanced PowerTrench® process. Advancements in both silicon and package technologies have
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FDMS8558S
FDMS8558S
RCA 900 mhz speakers
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FDMS86310
Abstract: No abstract text available
Text: FDMS86310 N-Channel PowerTrench MOSFET 80 V, 50 A, 4.8 mΩ Features General Description Max rDS on = 4.8 mΩ at VGS = 10 V, ID = 17 A This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node ringing of DC/DC converters using either synchronous or
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FDMS86310
FDMS86310
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MO-240
Abstract: FDMS86101
Text: FDMS86101 N-Channel PowerTrench MOSFET 100 V, 60 A, 8 mΩ Features General Description This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process thant has been especially tailored to minimize the on-state resistance and
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FDMS86101
FDMS86101
MO-240
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Untitled
Abstract: No abstract text available
Text: FDMS8018 N-Channel PowerTrench MOSFET 30 V, 49 A, 1.8 mΩ Features General Description Max rDS on = 1.8 mΩ at VGS = 10 V, ID = 30 A Max rDS(on) = 2.4 mΩ at VGS = 4.5 V, ID = 26 A This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node
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FDMS8018
FDMS8018
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PQFN08A
Abstract: No abstract text available
Text: FDMS8333L N-Channel PowerTrench MOSFET 40 V, 76 A, 3.1 mΩ Features General Description Max rDS on = 3.1 mΩ at VGS = 10 V, ID = 22 A This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node ringing of DC/DC converters using either synchronous or
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FDMS8333L
PQFN08A
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Untitled
Abstract: No abstract text available
Text: FDMS86310 N-Channel PowerTrench MOSFET 80 V, 50 A, 4.8 mΩ Features General Description ̈ Max rDS on = 4.8 mΩ at VGS = 10 V, ID = 17 A This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node ringing of DC/DC converters using either synchronous or
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FDMS86310
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Untitled
Abstract: No abstract text available
Text: FDMS7678 N-Channel Power Trench MOSFET 30 V, 26 A, 5.5 mΩ Features General Description Max rDS on = 5.5 mΩ at VGS = 10 V, ID = 17.5 A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance. This
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FDMS7678
FDMS7678
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FDMS8018
Abstract: MO-240
Text: FDMS8018 N-Channel PowerTrench MOSFET 30 V, 120 A, 1.8 mΩ Features General Description Max rDS on = 1.8 mΩ at VGS = 10 V, ID = 30 A Max rDS(on) = 2.4 mΩ at VGS = 4.5 V, ID = 26 A This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node
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FDMS8018
FDMS8018
MO-240
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PQFN08AREV6
Abstract: FDMS FDMS86101
Text: FDMS86101 N-Channel PowerTrench MOSFET 100 V, 60 A, 8 mΩ Features General Description This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process thant has been especially tailored to minimize the on-state resistance and
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FDMS86101
PQFN08AREV6
FDMS
FDMS86101
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Untitled
Abstract: No abstract text available
Text: FDMS0309AS N-Channel PowerTrench SyncFETTM 30 V, 49 A, 3.5 mΩ Features General Description The FDMS0309AS has been designed to minimize losses in power conversion application. Advancements in both silicon and package technologies have been combined to offer the lowest
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FDMS0309AS
FDMS0309AS
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Untitled
Abstract: No abstract text available
Text: N-Channel PowerTrench SyncFETTM 25 V, 60 A, 2.8 mΩ Features General Description ̈ Max rDS on = 2.8 mΩ at VGS = 10 V, ID = 24 A This N-Channel SyncFETTM is produced using Fairchild Semiconductor’s advanced PowerTrench® process. Advancements in both silicon and package technologies have
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FDMS86101
Abstract: No abstract text available
Text: FDMS86101 N-Channel PowerTrench MOSFET 100 V, 60 A, 8 mΩ Features General Description This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process thant has been especially tailored to minimize the on-state resistance and
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FDMS86101
FDMS86101
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Untitled
Abstract: No abstract text available
Text: FDMS8333L N-Channel PowerTrench MOSFET 40 V, 76 A, 3.1 mΩ Features General Description Max rDS on = 3.1 mΩ at VGS = 10 V, ID = 22 A This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node ringing of DC/DC converters using either synchronous or
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FDMS8333L
FDMS8333L
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MO-240
Abstract: PQFN08AREV6
Text: N-Channel PowerTrench SyncFETTM 25 V, 60 A, 2.8 mΩ Features General Description Max rDS on = 2.8 mΩ at VGS = 10 V, ID = 24 A This N-Channel SyncFETTM is produced using Fairchild Semiconductor’s advanced PowerTrench® process. Advancements in both silicon and package technologies have
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FDMS8570S
FDMS8570S
MO-240
PQFN08AREV6
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PQFN08AREV6
Abstract: No abstract text available
Text: FDMS7560S N-Channel PowerTrench SyncFETTM 25 V, 49 A, 1.45 mΩ Features General Description The FDMS7560S has been designed to minimize losses in power conversion application. Advancements in both silicon and package technologies have been combined to offer the lowest
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FDMS7560S
FDMS7560S
PQFN08AREV6
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FDMS86101
Abstract: No abstract text available
Text: FDMS86101 N-Channel PowerTrench MOSFET 100 V, 60 A, 8 mΩ Features General Description This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process thant has been especially tailored to minimize the on-state resistance and
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FDMS86101
FDMS86101
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