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    RJP6065

    Abstract: RJP6065DPM RJP6065DP RJP6065DPM-00-T1 RJP606
    Text: Preliminary Datasheet RJP6065DPM Silicon N Channel IGBT High Speed Power Switching R07DS0204EJ0100 Rev.1.00 Nov 19, 2010 Features • Low collector to emitter saturation voltage VCE sat = 1.8 V typ. (IC = 40 A, VGE = 15V, Ta = 25°C)  Gate to emitter voltage rating 30 V


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