RJP606 Search Results

RJP606 Result Highlights (4)

Part	ECAD Model	Manufacturer	Description	Download	Buy
RJP6065DPP-00#T2		Renesas Electronics Corporation	Insulated-Gate Bipolar Transistors (IGBT)
RJP6065DPN-00#T2		Renesas Electronics Corporation	Insulated-Gate Bipolar Transistors (IGBT)
RJP6065DPM-00#T1		Renesas Electronics Corporation	Insulated-Gate Bipolar Transistors (IGBT), TO-3PFM, /Tube
RJP6065DPM-00#T2		Renesas Electronics Corporation	Insulated-Gate Bipolar Transistors (IGBT)

RJP606 Price and Stock

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Rochester Electronics LLC RJP6065DPN-P1-T2 IGBT
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	RJP6065DPN-P1-T2	Bulk			103	1 - 10 - 100 - 1000 $2.92 10000 $2.92	Buy Now
Rochester Electronics LLC RJP6065DPE-00-J3 IGBT
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	RJP6065DPE-00-J3	Bulk			135	1 - 10 - 100 - 1000 $2.24 10000 $2.24	Buy Now
Renesas Electronics Corporation RJP6065DPN-P1#T2 RJP6065DPN-P1#T2
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Verical	RJP6065DPN-P1#T2		1,061		114	1 - 10 - 100 - 1000 $2.9875 10000 $2.9875	Buy Now
	RJP6065DPN-P1#T2		304		114	1 - 10 - 100 - 1000 $2.9875 10000 $2.9875	Buy Now
Rochester Electronics	RJP6065DPN-P1#T2		1,365		1	1 $2.81 10 $2.81 100 $2.64 1000 $2.39 10000 $2.39	Buy Now
Renesas Electronics Corporation RJP6065DPE-00#J3 RJP6065DPE-00#J3
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Verical	RJP6065DPE-00#J3		1,000		149	1 - 10 - 100 - 1000 $2.2875 10000 $2.2875	Buy Now
Rochester Electronics	RJP6065DPE-00#J3		1,000		1	1 $2.15 10 $2.15 100 $2.02 1000 $1.83 10000 $1.83	Buy Now
Renesas Electronics Corporation RJP6065DPM-00-T1 (Alt: RJP6065DPM-00-T1)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Silica	RJP6065DPM-00-T1			38 Weeks	360	1 - 10 - 100 - 1000 - 10000 -	Buy Now

RJP606 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
RJP6065 Abstract: RJP6065DPM RJP6065DP RJP6065DPM-00-T1 RJP606 Text: Preliminary Datasheet RJP6065DPM Silicon N Channel IGBT High Speed Power Switching R07DS0204EJ0100 Rev.1.00 Nov 19, 2010 Features • Low collector to emitter saturation voltage VCE sat = 1.8 V typ. (IC = 40 A, VGE = 15V, Ta = 25°C)  Gate to emitter voltage rating 30 V	Original	PDF	RJP6065DPM R07DS0204EJ0100 PRSS0003ZA-A RJP6065 RJP6065DPM RJP6065DP RJP6065DPM-00-T1 RJP606
rjh3047 Abstract: rjh3077 rjp3047 RJH3047DPK rjp3049 rjp6065 rjp3053 RJP3042 smd code FX mosfet RJP6055 Text: 2007.12 Renesas Discrete General Catalog Transistor/Diode/ Triac/ Thyristor www.renesas.com Triacs and Thyristors Small-Signal Transistors Power Transistor Renesas discrete devices: extending the limits Advanced electronic equipment requires larger data processing	Original	PDF	REJ01G0001-0400 rjh3047 rjh3077 rjp3047 RJH3047DPK rjp3049 rjp6065 rjp3053 RJP3042 smd code FX mosfet RJP6055
rjp6065 Abstract: RJP6006 rjp3053 rjh60f5 TRANSISTOR SMD MARKING CODE jg BCR1AM-12A equivalent RJH60F7 RJP3063 triac kt 207 600v RJP6006DPK Text: 2009.12 Renesas Discrete General Catalog Transistor/Diode/Triac/ Thyristor www.renesas.com Power MOSFETs Thyristors/TRIACs IGBTs Amplification Transistors Power Devices Non-MOS Low-voltage MOS Low switching loss and high speed High-voltage MOS Package current capacity and thermal resistance	Original	PDF
rjp3053 Abstract: RJP3063 rjp6065 RJP2557 RJP3057 RJH30 RQJ0301 RJP3065 rjk5020 RJK2009 Text: 2007.10 Renesas Transistors/Thyristors/Triacs Status List Topic_New-Generation Power MOS FET: Low Loss MOS FET " JET " 10th Gen. - - - - - - - - - - - - - - - - - - - - - - - - - - - - - 2 Index - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - 3 to 5	Original	PDF	REJ16G0001-1900 rjp3053 RJP3063 rjp6065 RJP2557 RJP3057 RJH30 RQJ0301 RJP3065 rjk5020 RJK2009