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SSB SBL 80-12I Re-battery: acid-lead; 12V; 80Ah; AGM; 350x167x182mm; 23kg
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
TME	SBL 80-12I		4		1	1 $150.8 10 $132.04 100 $132.04 1000 $132.04 10000 $132.04	Buy Now

SBL801 Datasheets (7)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
SBL-801		Unknown	The Diode Data Book with Package Outlines 1993		Scan	PDF
SBL-801		Sanyo Semiconductor	C to Millimeter Band Mixer, Detector, Modulator Applications		Scan	PDF
SBL-801A		Unknown	The Diode Data Book with Package Outlines 1993		Scan	PDF
SBL-801B		Unknown	The Diode Data Book with Package Outlines 1993		Scan	PDF
SBL-801Q		Unknown	The Diode Data Book with Package Outlines 1993		Scan	PDF
SBL-801S		Unknown	The Diode Data Book with Package Outlines 1993		Scan	PDF
SBL-801T		Unknown	The Diode Data Book with Package Outlines 1993		Scan	PDF

SBL801 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
KT 804 Abstract: kt 803 SBL-121 SBL-221 SBL-801 KT 802 EN3056 Text: Ordering number:EN3056 SBL Series Beam Lead Type GaAs Schottky Barrier Diode C to Millimeter Band Mixer, Detector, Modulator Applications Features Package Dimensions • Facilitates easy mounting on MIC Microwave IC . · Less parastic components, conversion loss.	Original	EN3056 SBL-121, 12GHz SBL-801 SBL-221 22GHz KT 804 kt 803 SBL-121 SBL-221 KT 802 EN3056	PDF
imt 145 Abstract: 199C 199D 1SS105A HSE11 HSE11S ND587R-3P ND587R-3R ND587T-3B ND587T-3P Text: - 172- ft m Vr r m s V 1S2175 I SS 11 1S S 10 5 1SS 10 5A HSE11 n n a n BM HSE11S ND587R-3P ND587R-3R ND587T-3B ND587T-3P EÎ Ï L BM BU n n ND587T-3R ND5051-3A ND5051-5E ND5053-3A N D 5 5 5 8 —00 A I FM Io. If * (V) («A) (mA) If s m V fbiîix (V) (A)	OCR Scan	9375MHz) 1SS105A 12GHz) HSE11 HSE11S ND587R-3P 20GHz) SBL-803A imt 145 199C 199D ND587R-3R ND587T-3B ND587T-3P	PDF
N058 Abstract: SBL-802B ND587T-3B 1SS105 801B S3006S 199C 199D 1SS105A HSE11 Text: - 172- ft m Vr r m s V Io. If * (V) («A) (mA) fe If s m V fbiîix (V) (A) Mil «UAt et €3F) (V) IF CmA) x =lps NF=5dB(f=9375MHz) NF=5dB(f=9375MHz) NF=4dB(f=12GHz) rd<l. 3 Q . S H F 3 0. 0. 0. 0. 0. 4 3 5 26 3 A VFCO. 02V, A Ct<0. 05pF, ACt<0.05pF 4 ^ i ' J y f J \| c	OCR Scan	9375MHz) 1SS105A 12GHz) HSE11 HSE11S ND587R-3P 20GHz) SBL-803A N058 SBL-802B ND587T-3B 1SS105 801B S3006S 199C 199D	PDF
SHS210 Abstract: SHS361 Text: Beam-lead GaAs Schottky Barrier Diodes Single diodes Absolute maximum ratings Device Application Electrical characteristics Ta = 25 deg. C Vr (V) *F (mA) Tm (teg. C) Vr @ Ir Vr (V) IB <UA) Ct Vf @ If Vf (V) If (mA) Ct (pF) @ » f H« @ If Rs (Q) If (mA)	OCR Scan	SBL-12Ì SBL-801« SBL-802* SBL-803® SBL-804» SBL-221® SHS264 SHS311 SHS320 SHS330 SHS210 SHS361	PDF
SBL Series Abstract: SBL-121 SBL-221 SBL-801 EN3056 30562 J SBL121 Text: Ordering number : EN3056 No.3056 _ /_ SBL Series / B eam Lead Type GaAs S chottky B a rrie r Diode / / C to Millimeter Band Mixer, Detector, Modulator Applications F e a tu re s - F a c ilita te s easy m o u n tin g on MIC M icrowave IC	OCR Scan	EN3056 SBL-121 12GHz SBL-801 SBL-221: 22GHzband SBL Series SBL-221 EN3056 30562 J SBL121	PDF
d1684 Abstract: C3788 c4217 d1047 c2078 C4161 D1651 D1682 k2043 K1460 Text: Transistors Type Number SAftYO Index *:New products for FEB added. Type No. Package Page Type No. 2SA Typi T0220 2SA1011 NP Al 016,1 SPA A] 177 NP A 1207 MP Al 208 T0126 Al 209 A ’237 DP6A, B il A: 238 it A! 239 il Ax 240 NP A: 246 T0126 A: 248 h A. 249	OCR Scan	2SA1520 A1522 A1523 A1524 A1525 A1526 A1527 A1528 A1536 A1537 d1684 C3788 c4217 d1047 c2078 C4161 D1651 D1682 k2043 K1460	PDF
199C Abstract: 199D 1SS105A HSE11 HSE11S ND587R-3P ND587R-3R ND587T-3B ND587T-3P Text: 172- - ft m Vr r m s V Io. If * (V) («A) (mA) If s m V fbiîix (V) (A) Mil «UAt et €3F) (V) IF CmA) x =lps NF=5dB(f=9375MHz) NF=5dB(f=9375MHz) NF=4dB(f=12GHz) rd<l. 3 Q . S H F 3 0. 0. 0. 0. 0. 4 3 5 26 3 A VFCO. 02V, A Ct<0. 05pF, ACt<0.05pF 4 ^ i ' J y f J \| c	OCR Scan	9375MHz) 1SS105A 12GHz) HSE11 HSE11S ND587R-3P 20GHz) SBL-803T 199C 199D ND587R-3R ND587T-3B ND587T-3P	PDF
199C Abstract: 199D 1SS105A HSE11 HSE11S ND587R-3P ND587R-3R ND587T-3B ND587T-3P 100RD Text: - 172- ft m Vr r m s V Io. If * (V) («A) (mA) fe If s m V fbiîix (V) (A) Mil «UAt et €3F) (V) IF CmA) x =lps NF=5dB(f=9375MHz) NF=5dB(f=9375MHz) NF=4dB(f=12GHz) rd<l. 3 Q . S H F 3 0. 0. 0. 0. 0. 4 3 5 26 3 A VFCO. 02V, A Ct<0. 05pF, ACt<0.05pF 4 ^ i ' J y f J \| c	OCR Scan	9375MHz) 1SS105A 12GHz) HSE11 HSE11S ND587R-3P 20GHz) 12MAX S3129 199C 199D ND587R-3R ND587T-3B ND587T-3P 100RD	PDF
SBL-802A Abstract: No abstract text available Text: SAfÊYO B e a m lead T y p e G a A s S c h o t t k y B a r r i e r D i o d e s The Sanyo SBL Series are suited for MIC mounting due to small parasitic ingredient, conversion loss and milli-wave use avai lable. S in g 1e Type Absolute Maximum Ratings /Ta=25r	OCR Scan	10sec IF-30 22GHz 11i-wave, SBL801A, SBL802A, SBL803A, SBL804A, SBL-802A	PDF
VEI 005 Abstract: IR 010 SBL121 SBL221 SBL801 SBL801A SBL802 SBL802A SBL803 SBL803A Text: GaAs D io d e s 2 a l e G a A s S c h o t t k y B a r r ier D i o d e s B e a m lead Typ e The Sanyo SBL Series are suited for MIC mounting due to small parasitic ingredient, conversion loss and milli-wave use available. S i n g 1e T y p e Absolute Maximum Ratings	OCR Scan	Ii-10uA SBL121 SBL801 11i-wave, SBL802 10sec 10jiA SVD101 SVD102 SVD201 VEI 005 IR 010 SBL121 SBL221 SBL801 SBL801A SBL802A SBL803 SBL803A	PDF
SPD-221 Abstract: No abstract text available Text: SAfiYO G a A s Di o d e s 1 ale GaAs Schottky P a c k a g e d 'I'ype B a r r 1 e r Di o d e s The Sanyo SPD Se ri e s a re packaged type GaAs Schottky b a r r i e r diodes designed fo r co nverters, modul at o rs , d e t e c t o r s th at can be operated in the X band (8.2 to 12.4GHz) and KU band (12.4 to 18. 0GHz).	OCR Scan	SGD102, SGD102T) SBL801A, SBL802A, SBL803A, SBL804A, 10sec 11i-wave, SVD101 SVD102 SPD-221	PDF
d1878 Abstract: D1887 C4106 D1880 D1825 transistors D1878 c3987 C4161 D1651 k1459 Text: Transistors Type Number SAVYO In dex *:New products for Type No. Package Page Type No. Package Page Type No. Package 2SA Type NP 2SA1016.il A1177 SPA AI207 NP A1208 MP A1209 T0126 A 1246 NP A 1248 T0126 il A1249 A 1252 CP A 1253 SPA A1256 CP il Al 257 A1258	OCR Scan	A1527 A1528 A1537 A1540 A1573 A1574 A1575 A1580 A1590 A1607 d1878 D1887 C4106 D1880 D1825 transistors D1878 c3987 C4161 D1651 k1459	PDF
Untitled Abstract: No abstract text available Text: Data Communications VCO Modules Type Noydnraderlstics Kent Symbol Conditions SMOI137V SMOI137VN SM01307V SM01307VN SMOI 073V Oscillation frequency fo VD=5.0V VC=3.5/4.0V Operating current ID VD=5V, f= 0 VC=3.5/4.0V 60mA or lower Output level PO Vo=5V, (=fO	OCR Scan	SMOI137V SMOI137VN 300GHz SM01307V SM01307VN 050GHz 750GHz 100kHz 08MHz/V SBL-801	PDF
sbl 50 Abstract: 199C 199D 1SS105A HSE11 HSE11S ND587R-3P ND587R-3R ND587T-3B ND587T-3P Text: - 172- ft m Vr r m s V Io. If * (V) («A) (mA) fe If s m V fbiîix (V) (A) Mil «UAt et €3F) (V) IF CmA) x =lps NF=5dB(f=9375MHz) NF=5dB(f=9375MHz) NF=4dB(f=12GHz) rd<l. 3 Q . S H F 3 0. 0. 0. 0. 0. 4 3 5 26 3 A VFCO. 02V, A Ct<0. 05pF, ACt<0.05pF 4 ^ i ' J y f J \| c	OCR Scan	9375MHz) 1SS105A 12GHz) HSE11 HSE11S ND587R-3P 20GHz) SBL-803A sbl 50 199C 199D ND587R-3R ND587T-3B ND587T-3P	PDF