imt 145
Abstract: 199C 199D 1SS105A HSE11 HSE11S ND587R-3P ND587R-3R ND587T-3B ND587T-3P
Text: - 172- ft m Vr r m s V 1S2175 I SS 11 1S S 10 5 1SS 10 5A HSE11 n n a n BM HSE11S ND587R-3P ND587R-3R ND587T-3B ND587T-3P EÎ Ï L BM BU n n ND587T-3R ND5051-3A ND5051-5E ND5053-3A N D 5 5 5 8 —00 A I FM Io. If * (V) («A) (mA) If s m V fbiîix (V) (A)
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OCR Scan
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9375MHz)
1SS105A
12GHz)
HSE11
HSE11S
ND587R-3P
20GHz)
SBL-803A
imt 145
199C
199D
ND587R-3R
ND587T-3B
ND587T-3P
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PDF
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N058
Abstract: SBL-802B ND587T-3B 1SS105 801B S3006S 199C 199D 1SS105A HSE11
Text: - 172- ft m Vr r m s V Io. If * (V) («A) (mA) fe If s m V fbiîix (V) (A) Mil «UAt et €3F) (V) IF CmA) x =lps NF=5dB(f=9375MHz) NF=5dB(f=9375MHz) NF=4dB(f=12GHz) rd<l. 3 Q . S H F 3 0. 0. 0. 0. 0. 4 3 5 26 3 A VFCO. 02V, A Ct<0. 05pF, ACt<0.05pF 4 ^ i ' J y f J | c
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OCR Scan
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9375MHz)
1SS105A
12GHz)
HSE11
HSE11S
ND587R-3P
20GHz)
SBL-803A
N058
SBL-802B
ND587T-3B
1SS105
801B
S3006S
199C
199D
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PDF
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SHS210
Abstract: SHS361
Text: Beam-lead GaAs Schottky Barrier Diodes Single diodes Absolute maximum ratings Device Application Electrical characteristics Ta = 25 deg. C Vr (V) *F (mA) Tm (teg. C) Vr @ Ir Vr (V) IB <UA) Ct Vf @ If Vf (V) If (mA) Ct (pF) @ » f H« @ If Rs (Q) If (mA)
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OCR Scan
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SBL-12Ì
SBL-801«
SBL-802*
SBL-803®
SBL-804»
SBL-221®
SHS264
SHS311
SHS320
SHS330
SHS210
SHS361
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PDF
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d1684
Abstract: C3788 c4217 d1047 c2078 C4161 D1651 D1682 k2043 K1460
Text: Transistors Type Number SAftYO Index *:New products for FEB added. Type No. Package Page Type No. 2SA Typi T0220 2SA1011 NP Al 016,1 SPA A] 177 NP A 1207 MP Al 208 T0126 Al 209 A ’237 DP6A, B il A: 238 it A! 239 il Ax 240 NP A: 246 T0126 A: 248 h A. 249
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OCR Scan
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2SA1520
A1522
A1523
A1524
A1525
A1526
A1527
A1528
A1536
A1537
d1684
C3788
c4217
d1047
c2078
C4161
D1651
D1682
k2043
K1460
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PDF
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199C
Abstract: 199D 1SS105A HSE11 HSE11S ND587R-3P ND587R-3R ND587T-3B ND587T-3P
Text: 172- - ft m Vr r m s V Io. If * (V) («A) (mA) If s m V fbiîix (V) (A) Mil «UAt et €3F) (V) IF CmA) x =lps NF=5dB(f=9375MHz) NF=5dB(f=9375MHz) NF=4dB(f=12GHz) rd<l. 3 Q . S H F 3 0. 0. 0. 0. 0. 4 3 5 26 3 A VFCO. 02V, A Ct<0. 05pF, ACt<0.05pF 4 ^ i ' J y f J | c
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OCR Scan
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9375MHz)
1SS105A
12GHz)
HSE11
HSE11S
ND587R-3P
20GHz)
SBL-803T
199C
199D
ND587R-3R
ND587T-3B
ND587T-3P
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PDF
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199C
Abstract: 199D 1SS105A HSE11 HSE11S ND587R-3P ND587R-3R ND587T-3B ND587T-3P 100RD
Text: - 172- ft m Vr r m s V Io. If * (V) («A) (mA) fe If s m V fbiîix (V) (A) Mil «UAt et €3F) (V) IF CmA) x =lps NF=5dB(f=9375MHz) NF=5dB(f=9375MHz) NF=4dB(f=12GHz) rd<l. 3 Q . S H F 3 0. 0. 0. 0. 0. 4 3 5 26 3 A VFCO. 02V, A Ct<0. 05pF, ACt<0.05pF 4 ^ i ' J y f J | c
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OCR Scan
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9375MHz)
1SS105A
12GHz)
HSE11
HSE11S
ND587R-3P
20GHz)
12MAX
S3129
199C
199D
ND587R-3R
ND587T-3B
ND587T-3P
100RD
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PDF
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SBL-802A
Abstract: No abstract text available
Text: SAfÊYO B e a m lead T y p e G a A s S c h o t t k y B a r r i e r D i o d e s The Sanyo SBL Series are suited for MIC mounting due to small parasitic ingredient, conversion loss and milli-wave use avai lable. S in g 1e Type Absolute Maximum Ratings /Ta=25r
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OCR Scan
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10sec
IF-30
22GHz
11i-wave,
SBL801A,
SBL802A,
SBL803A,
SBL804A,
SBL-802A
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PDF
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VEI 005
Abstract: IR 010 SBL121 SBL221 SBL801 SBL801A SBL802 SBL802A SBL803 SBL803A
Text: GaAs D io d e s 2 a l e G a A s S c h o t t k y B a r r ier D i o d e s B e a m lead Typ e The Sanyo SBL Series are suited for MIC mounting due to small parasitic ingredient, conversion loss and milli-wave use available. S i n g 1e T y p e Absolute Maximum Ratings
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OCR Scan
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Ii-10uA
SBL121
SBL801
11i-wave,
SBL802
10sec
10jiA
SVD101
SVD102
SVD201
VEI 005
IR 010
SBL121
SBL221
SBL801
SBL801A
SBL802A
SBL803
SBL803A
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PDF
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SPD-221
Abstract: No abstract text available
Text: SAfiYO G a A s Di o d e s 1 ale GaAs Schottky P a c k a g e d 'I'ype B a r r 1 e r Di o d e s The Sanyo SPD Se ri e s a re packaged type GaAs Schottky b a r r i e r diodes designed fo r co nverters, modul at o rs , d e t e c t o r s th at can be operated in the X band (8.2 to 12.4GHz) and KU band (12.4 to 18. 0GHz).
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OCR Scan
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SGD102,
SGD102T)
SBL801A,
SBL802A,
SBL803A,
SBL804A,
10sec
11i-wave,
SVD101
SVD102
SPD-221
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PDF
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d1878
Abstract: D1887 C4106 D1880 D1825 transistors D1878 c3987 C4161 D1651 k1459
Text: Transistors Type Number SAVYO In dex *:New products for Type No. Package Page Type No. Package Page Type No. Package 2SA Type NP 2SA1016.il A1177 SPA AI207 NP A1208 MP A1209 T0126 A 1246 NP A 1248 T0126 il A1249 A 1252 CP A 1253 SPA A1256 CP il Al 257 A1258
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OCR Scan
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A1527
A1528
A1537
A1540
A1573
A1574
A1575
A1580
A1590
A1607
d1878
D1887
C4106
D1880
D1825
transistors D1878
c3987
C4161
D1651
k1459
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PDF
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Untitled
Abstract: No abstract text available
Text: Data Communications VCO Modules Type Noydnraderlstics Kent Symbol Conditions SMOI137V SMOI137VN SM01307V SM01307VN SMOI 073V Oscillation frequency fo VD=5.0V VC=3.5/4.0V Operating current ID VD=5V, f= 0 VC=3.5/4.0V 60mA or lower Output level PO Vo=5V, (=fO
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OCR Scan
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SMOI137V
SMOI137VN
300GHz
SM01307V
SM01307VN
050GHz
750GHz
100kHz
08MHz/V
SBL-801
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PDF
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sbl 50
Abstract: 199C 199D 1SS105A HSE11 HSE11S ND587R-3P ND587R-3R ND587T-3B ND587T-3P
Text: - 172- ft m Vr r m s V Io. If * (V) («A) (mA) fe If s m V fbiîix (V) (A) Mil «UAt et €3F) (V) IF CmA) x =lps NF=5dB(f=9375MHz) NF=5dB(f=9375MHz) NF=4dB(f=12GHz) rd<l. 3 Q . S H F 3 0. 0. 0. 0. 0. 4 3 5 26 3 A VFCO. 02V, A Ct<0. 05pF, ACt<0.05pF 4 ^ i ' J y f J | c
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OCR Scan
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9375MHz)
1SS105A
12GHz)
HSE11
HSE11S
ND587R-3P
20GHz)
SBL-803A
sbl 50
199C
199D
ND587R-3R
ND587T-3B
ND587T-3P
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PDF
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HSE11S
Abstract: 199C 199D 1SS105A HSE11 ND587R-3P ND587R-3R ND587T-3B ND587T-3P
Text: - 172 - ft m Vr r m s V 1S2175 I SS 11 1S S 10 5 1SS 10 5A HSE11 n n a n BM HSE11S ND587R-3P ND587R-3R ND587T-3B ND587T-3P EÎ Ï L BM BU n n ND587T-3R ND5051-3A ND5051-5E ND5053-3A N D 5 5 5 8 —00 A I FM Io. If * (V) («A) (mA) If s m V fbiîix (V) (A)
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OCR Scan
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9375MHz)
1SS105A
12GHz)
HSE11
HSE11S
ND587R-3P
20GHz)
SBL-803A
199C
199D
ND587R-3R
ND587T-3B
ND587T-3P
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PDF
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