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    Untitled

    Abstract: No abstract text available
    Text: 25E D N AMER PHI LI PS/ DIS CR ET E bb53T31 0020515 1 • BUK455-600A BUK455-600B PowerMOS transistor 3 GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies


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    bb53T31 BUK455-600A BUK455-600B BUK455 -600A -600B si10Id btS3131 PDF

    YBs transistor

    Abstract: BUK437-400B
    Text: PHILIPS INTERNATIONAL bSE D O 7110fl5b DDbBTlb 5^b « P H I N Philips Sem iconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in


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    7110fl5b BUK437-400B VA62b 00b3T20 YBs transistor BUK437-400B PDF

    Philips 1H0

    Abstract: LD25C BUK437-600B
    Text: P H IL I PS I N T E R N A T I O N A L bSE » ES 7 1 1 0 0 2 b D G b 3 R E b 435 B P H I N Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channe! enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in


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    BUK437-600B Philips 1H0 LD25C PDF