Untitled
Abstract: No abstract text available
Text: 25E D N AMER PHI LI PS/ DIS CR ET E bb53T31 0020515 1 • BUK455-600A BUK455-600B PowerMOS transistor 3 GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies
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bb53T31
BUK455-600A
BUK455-600B
BUK455
-600A
-600B
si10Id
btS3131
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YBs transistor
Abstract: BUK437-400B
Text: PHILIPS INTERNATIONAL bSE D O 7110fl5b DDbBTlb 5^b « P H I N Philips Sem iconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in
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7110fl5b
BUK437-400B
VA62b
00b3T20
YBs transistor
BUK437-400B
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Philips 1H0
Abstract: LD25C BUK437-600B
Text: P H IL I PS I N T E R N A T I O N A L bSE » ES 7 1 1 0 0 2 b D G b 3 R E b 435 B P H I N Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channe! enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in
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BUK437-600B
Philips 1H0
LD25C
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PDF
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