Datasheet Archive: SI2329DS datasheets

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Vishay Siliconix SI2329DS-T1-GE3 MOSFET P-CH 8V 6A SOT23-3
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	SI2329DS-T1-GE3	Cut Tape	14,077		1	1 $0.95 10 $0.594 100 $0.95 1000 $0.26866 10000 $0.26866	Buy Now
	SI2329DS-T1-GE3	Digi-Reel	14,077		1	1 $0.95 10 $0.594 100 $0.95 1000 $0.26866 10000 $0.26866	Buy Now
RS	SI2329DS-T1-GE3	Bulk			20	1 - 10 - 100 $0.6 1000 $0.6 10000 $0.6	Get Quote
New Advantage Corporation	SI2329DS-T1-GE3		6,000		1	1 - 10 - 100 - 1000 - 10000 $0.2538	Buy Now
Vishay Intertechnologies SI2329DS-T1-GE3 Trans MOSFET P-CH 8V 5.3A 3-Pin SOT-23 T/R - Tape and Reel (Alt: SI2329DS-T1-GE3)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	SI2329DS-T1-GE3	Reel	9,000	18 Weeks	3,000	1 - 10 - 100 - 1000 - 10000 $0.1875	Buy Now
	SI2329DS-T1-GE3	Bulk		19 Weeks, 1 Days	1	1 $0.592 10 $0.477 100 $0.367 1000 $0.367 10000 $0.367	Buy Now
	SI2329DS-T1-GE3	Ammo Pack		17 Weeks, 3 Days	1	1 $0.55 10 $0.435 100 $0.325 1000 $0.325 10000 $0.325	Buy Now
Mouser Electronics	SI2329DS-T1-GE3		26,891			1 $0.63 10 $0.433 100 $0.342 1000 $0.267 10000 $0.203	Buy Now
Verical	SI2329DS-T1-GE3		45,000		3,000	1 - 10 - 100 - 1000 - 10000 $0.1831	Buy Now
	SI2329DS-T1-GE3		10,419		254	1 - 10 - 100 - 1000 $0.2879 10000 $0.2653	Buy Now
	SI2329DS-T1-GE3		3,000		3,000	1 - 10 - 100 - 1000 - 10000 $0.194	Buy Now
Arrow Electronics	SI2329DS-T1-GE3		45,000	18 Weeks	3,000	1 - 10 - 100 - 1000 - 10000 $0.1831	Buy Now
	SI2329DS-T1-GE3		3,000	18 Weeks	3,000	1 - 10 - 100 - 1000 - 10000 $0.1937	Buy Now
	SI2329DS-T1-GE3	Cut Strips	17	18 Weeks	1	1 $0.3305 10 $0.2131 100 $0.2131 1000 $0.2131 10000 $0.2131	Buy Now
Newark	SI2329DS-T1-GE3	Bulk	10,419		1	1 $0.197 10 $0.197 100 $0.197 1000 $0.197 10000 $0.197	Buy Now
	SI2329DS-T1-GE3	Reel	9,000		3,000	1 $0.188 10 $0.188 100 $0.188 1000 $0.188 10000 $0.188	Buy Now
	SI2329DS-T1-GE3	Cut Tape	427		1	1 $0.55 10 $0.435 100 $0.325 1000 $0.325 10000 $0.325	Buy Now

Quest Components	SI2329DS-T1-GE3		40,731			1 $10.4022 10 $10.4022 100 $10.4022 1000 $5.2011 10000 $5.2011	Buy Now
	SI2329DS-T1-GE3		40,731			1 $10.4022 10 $10.4022 100 $10.4022 1000 $5.2011 10000 $5.2011	Buy Now
TTI	SI2329DS-T1-GE3	Reel	3,000		3,000	1 - 10 - 100 - 1000 - 10000 $0.188	Buy Now
TME	SI2329DS-T1-GE3		2,922		1	1 $0.551 10 $0.439 100 $0.301 1000 $0.27 10000 $0.27	Buy Now
Avnet Asia	SI2329DS-T1-GE3			23 Weeks	3,000	1 - 10 - 100 - 1000 - 10000 $0.36247	Buy Now
Chip-Germany GmbH	SI2329DS-T1-GE3		400			1 - 10 - 100 - 1000 - 10000 -	Get Quote
EBV Elektronik	SI2329DS-T1-GE3			22 Weeks	3,000	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Others SI2329DS-T1-GE3
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Chip-Germany GmbH	SI2329DS-T1-GE3		2,375			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Vishay Huntington SI2329DS-T1-GE3 MOSFET P-CH 8V 6A SOT-23
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Win Source Electronics	SI2329DS-T1-GE3		17,700			1 - 10 - 100 - 1000 $0.2297 10000 $0.199	Buy Now

SI2329DS Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
SI2329DS-T1-GE3		Vishay Siliconix	FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 8V 6A SOT-23		Original	PDF

SI2329DS Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
Si2329DS Abstract: si2329 si23 Text: SPICE Device Model Si2329DS Vishay Siliconix P-Channel 8 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the p-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C	Original	PDF	Si2329DS 11-Mar-11 si2329 si23
si2329 Abstract: SI2329DS Text: Si2329DS Vishay Siliconix P-Channel 8 V D-S MOSFET FEATURES MOSFET PRODUCT SUMMARY RDS(on) () ID (A)a 0.030 at VGS = - 4.5 V - 6e 0.036 at VGS = - 2.5 V - 6e 0.048 at VGS = - 1.8 V - 5.9 0.068 at VGS = - 1.5 V -5 0.120 at VGS = - 1.2 V - 3.7 VDS (V) -8	Original	PDF	Si2329DS 2002/95/EC O-236 OT-23) Si2329DS-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. si2329
SI2329DS-T1-GE3 Abstract: No abstract text available Text: Si2329DS Vishay Siliconix P-Channel 8 V D-S MOSFET FEATURES MOSFET PRODUCT SUMMARY RDS(on) () ID (A)a 0.030 at VGS = - 4.5 V - 6e 0.036 at VGS = - 2.5 V - 6e 0.048 at VGS = - 1.8 V - 5.9 0.068 at VGS = - 1.5 V -5 0.120 at VGS = - 1.2 V - 3.7 VDS (V) -8	Original	PDF	Si2329DS 2002/95/EC O-236 OT-23) Si2329DS-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU.
Untitled Abstract: No abstract text available Text: SPICE Device Model Si2329DS www.vishay.com Vishay Siliconix P-Channel 8 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the p-channel vertical DMOS. The sub-circuit model is extracted and optimized over the -55 °C	Original	PDF	Si2329DS 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12
si2329 Abstract: 43217 Si23 Text: Si2329DS-GE3_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,	Original	PDF	Si2329DS-GE3 AN609, 7637u 4804m 0003m 5656u 7143m 9848m 6315m 04-Apr-11 si2329 43217 Si23
si2329 Abstract: No abstract text available Text: Si2329DS Vishay Siliconix P-Channel 8 V D-S MOSFET FEATURES MOSFET PRODUCT SUMMARY RDS(on) () ID (A)a 0.030 at VGS = - 4.5 V - 6e 0.036 at VGS = - 2.5 V - 6e 0.048 at VGS = - 1.8 V - 5.9 0.068 at VGS = - 1.5 V -5 0.120 at VGS = - 1.2 V - 3.7 VDS (V) -8	Original	PDF	Si2329DS 2002/95/EC O-236 OT-23) Si2329DS-T1-GE3 11-Mar-11 si2329
Untitled Abstract: No abstract text available Text: Si2329DS Vishay Siliconix P-Channel 8 V D-S MOSFET FEATURES MOSFET PRODUCT SUMMARY RDS(on) () ID (A)a 0.030 at VGS = - 4.5 V - 6e 0.036 at VGS = - 2.5 V - 6e 0.048 at VGS = - 1.8 V - 5.9 0.068 at VGS = - 1.5 V -5 0.120 at VGS = - 1.2 V - 3.7 VDS (V) -8	Original	PDF	Si2329DS 2002/95/EC O-236 OT-23) Si2329DS-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A
SI1489EDH Abstract: No abstract text available Text: V I S H AY I N T E R T E C H N O L O G Y, I N C . POWER MOSFETs MOSFETs - On-Resistance Ratings at VGS = 1.2 V 1.2 V Rated MOSFETs Industry’s First Load Switches Designed for On-Resistance Ratings at 1.2 V KEY BENEFITS • Optimized for use with the low-voltage core ICs in portable electronics systems	Original	PDF	SiA920DJ SC-70 SiB914DK SC-75 Si1011X Si8805EDB com/mosfets/12-rated-on-res/ com/mosfets/15-rated-on-res/ VMN-PT0103-1402 SI1489EDH
si7121 Abstract: Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836 Text: V ishay I ntertechnology, I nc . MOSFETs - Comprehensive Power MOSFET Technology Range I INNOVAT AND TEC O L OGY Vishay Siliconix N HN Power mosfets O 19 62-2012 Low to High Voltage Power MOSFETs ChipFET P o w e r PA K ® P o l a r PA K ® P o w e r PA I R ®	Original	PDF	Mediu33-4-9337-2727 VMN-SG2127-1210 si7121 Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836
SiB914 Abstract: SiA427DJ si2329ds si8802 Text: V I S H AY I N T E R T E C H N O L O G Y, I N C . MOSFETs - On-Resistance Ratings at VGS = 1.2 V AND TEC I INNOVAT O L OGY 1.2 V Rated MOSFETs N HN POWER MOSFETs O 19 62-2012 Industry’s First Load Switches Designed for On-Resistance Ratings at 1.2 V KEY BENEFITS	Original	PDF	SC-70 SC-75 com/mosfets/12-rated-on-res/ com/mosfets/15-rated-on-res/ VMN-PT0103-1209 SiB914 SiA427DJ si2329ds si8802

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SI2329DS Price and Stock

Vishay Siliconix SI2329DS-T1-GE3

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SI2329DS Datasheets (1)

SI2329DS Datasheets Context Search

Si2329DS

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SI2329DS-T1-GE3

Untitled

si2329

si2329

Untitled

SI1489EDH

si7121

SiB914