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    Vishay Intertechnologies SI4652DY-T1-E3

    MOSFETs 25V 30A 6.0W
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics SI4652DY-T1-E3
    • 1 -
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    • 1000 -
    • 10000 $0.719
    		Get Quote

    Vishay Intertechnologies SI4652DY-T1-GE3

    MOSFETs 25V 30A 6.0W 3.5mohm @ 10V
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics SI4652DY-T1-GE3
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 $0.719
    		Get Quote

    SI4652 Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    Si4652DY Toshiba Power MOSFETs Cross Reference Guide Original PDF

    SI4652 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    69256

    Abstract: Si4652DY si4652
    Text: New Product Si4652DY Vishay Siliconix N-Channel 25-V D-S MOSFET FEATURES • TrenchFET Power MOSFET PRODUCT SUMMARY VDS (V) 25 rDS(on) (Ω) ID (A)a 0.0035 at VGS = 10 V 30 0.0042 at VGS = 4.5 V 28 Qg (Typ) • 100 % Rg and UIS Tested RoHS COMPLIANT 35.5 nC


    Original     		Si4652DY Si4652DY-T1-E3 08-Apr-05 69256 si4652 PDF

    7441

    Abstract: 8843 AN609 Si4652DY 24536
    Text: Si4652DY_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].


    Original     		Si4652DY AN609 17-Aug-07 7441 8843 24536 PDF

    Untitled

    Abstract: No abstract text available
    Text: New Product Si4652DY Vishay Siliconix N-Channel 25-V D-S MOSFET FEATURES • TrenchFET Power MOSFET PRODUCT SUMMARY VDS (V) 25 rDS(on) (Ω) ID (A)a 0.0035 at VGS = 10 V 30 0.0042 at VGS = 4.5 V 28 Qg (Typ) • 100 % Rg and UIS Tested RoHS COMPLIANT 35.5 nC


    Original     		Si4652DY Si4652DY-T1-E3 18-Jul-08 PDF

    Untitled

    Abstract: No abstract text available
    Text: Si4652DY Vishay Siliconix N-Channel 25-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0035 at VGS = 10 V 30 0.0042 at VGS = 4.5 V 28 VDS (V) 25 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET • 100 % Rg and UIS Tested


    Original     		Si4652DY Si4652DY-T1-E3 Si4652DY-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    Untitled

    Abstract: No abstract text available
    Text: Si4652DY Vishay Siliconix N-Channel 25-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0035 at VGS = 10 V 30 0.0042 at VGS = 4.5 V 28 VDS (V) 25 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET • 100 % Rg and UIS Tested


    Original     		Si4652DY Si4652DY-T1-E3 Si4652DY-T1-GE3 11-Mar-11 PDF

    TB-17

    Abstract: Si4652DY
    Text: Si4652DY Vishay Siliconix N-Channel 25-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0035 at VGS = 10 V 30 0.0042 at VGS = 4.5 V 28 VDS (V) 25 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET • 100 % Rg and UIS Tested


    Original     		Si4652DY Si4652DY-T1-E3 Si4652DY-T1-GE3 18-Jul-08 TB-17 PDF

    Si4652DY

    Abstract: No abstract text available
    Text: SPICE Device Model Si4652DY Vishay Siliconix N-Channel Reduced Qg, Fast Switching MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model Subcircuit Model • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		Si4652DY 18-Jul-08 PDF

    Untitled

    Abstract: No abstract text available
    Text: Si4652DY Vishay Siliconix N-Channel 25-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0035 at VGS = 10 V 30 0.0042 at VGS = 4.5 V 28 VDS (V) 25 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET • 100 % Rg and UIS Tested


    Original     		Si4652DY Si4652DY-T1-E3 Si4652DY-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 PDF

    YTA630

    Abstract: MTW14P20 BSS125 MTAJ30N06HD 2SK2837 equivalent SMU10P05 SMP60N06 replacement STE180N10 RFH75N05E IRFD620
    Text: Power MOSFETs Cross Reference Alphanumerically Part Number VDSS V RDS(ON) (ohm) ID (A) PD (W) Package 2N7000 2N7002 2SJ377 2SJ378 2SJ380 2SJ401 2SJ402 2SJ407 2SJ412 2SJ419 2SJ420 2SJ421 2SJ438 2SJ439 2SJ464 2SJ465 2SJ468 2SJ469 2SJ482 2SJ507 2SJ508 2SJ509


    Original     		2N7000 2N7002 2SJ377 2SJ378 2SJ380 2SJ401 2SJ402 2SJ407 2SJ412 2SJ419 YTA630 MTW14P20 BSS125 MTAJ30N06HD 2SK2837 equivalent SMU10P05 SMP60N06 replacement STE180N10 RFH75N05E IRFD620 PDF

    chn 834 TRANSISTOR

    Abstract: High-Power 202A MOSFET CA3458T 40468A 3N128 equivalent ta7657 DIODE chn 548 TA7374 Thyristor chn 542 cd 40938
    Text: RCA Solid State Total Data Service System The RCA Solid State DATABOOKS are supplemented throughout the year by a comprehensive data service system that keeps you aware of all new device announcements and lets you obtain as much or as little product information as


    OCR Scan     		-206A CR208 CR210 CR212 CR280 CR301 CR303 CR304 CR306 CR311 chn 834 TRANSISTOR High-Power 202A MOSFET CA3458T 40468A 3N128 equivalent ta7657 DIODE chn 548 TA7374 Thyristor chn 542 cd 40938 PDF