Datasheet Archive: SI8808 datasheets

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Vishay Siliconix SI8808DB-T2-E1 MOSFET N-CH 30V 4MICROFOOT
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	SI8808DB-T2-E1	Digi-Reel	5,291		1	1 $0.7 10 $0.433 100 $0.7 1000 $0.18958 10000 $0.18958	Buy Now
	SI8808DB-T2-E1	Cut Tape	5,291		1	1 $0.7 10 $0.433 100 $0.7 1000 $0.18958 10000 $0.18958	Buy Now
	SI8808DB-T2-E1	Reel	3,000		3,000	1 - 10 - 100 - 1000 - 10000 $0.16218	Buy Now
Vishay Intertechnologies SI8808DB-T2-E1 N-CHANNEL 30-V (D-S) MOSFET - Tape and Reel (Alt: SI8808DB-T2-E1)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	SI8808DB-T2-E1	Reel	3,000	6 Weeks	3,000	1 - 10 - 100 - 1000 - 10000 $0.11518	Buy Now
Mouser Electronics	SI8808DB-T2-E1		11,797			1 $0.59 10 $0.393 100 $0.259 1000 $0.18 10000 $0.125	Buy Now
Verical	SI8808DB-T2-E1		3,000		3,000	1 - 10 - 100 - 1000 - 10000 $0.1236	Buy Now
Arrow Electronics	SI8808DB-T2-E1		3,000	63 Weeks	3,000	1 - 10 - 100 - 1000 - 10000 $0.1234	Buy Now
Newark	SI8808DB-T2-E1	Reel			3,000	1 $0.205 10 $0.205 100 $0.205 1000 $0.205 10000 $0.169	Buy Now

TTI	SI8808DB-T2-E1	Reel	30,000		3,000	1 - 10 - 100 - 1000 - 10000 $0.117	Buy Now
Avnet Asia	SI8808DB-T2-E1			8 Weeks	3,000	1 - 10 - 100 - 1000 - 10000 -	Get Quote
EBV Elektronik	SI8808DB-T2-E1			7 Weeks	3,000	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Vishay Intertechnologies SI8808DB-T2-E1. Channel Type:N Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:2.5A; Transistor Mounting:Surface Mount; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:900Mv; Power Dissipation:900Mw; No. Of Pins:4Pins Rohs Compliant: No \|Vishay SI8808DB-T2-E1.
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Newark	SI8808DB-T2-E1.	Reel	3,000		3,000	1 $0.205 10 $0.205 100 $0.205 1000 $0.205 10000 $0.169	Buy Now
Vishay Intertechnologies SI8808DBT2E1 N-CHANNEL 30 V (D-S) MOSFET Small Signal Field-Effect Transistor, 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
ComSIT USA	SI8808DBT2E1		3,000			1 - 10 - 100 - 1000 - 10000 -	Get Quote

SI8808 Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
SI8808DB-T2-E1		Vishay Siliconix	FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 30V MICROFOOT		Original	PDF

SI8808 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
si88 Abstract: SI8808DB-T2-E1 si8808 Text: New Product Si8808DB Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) () Max. ID (A)a 0.095 at VGS = 4.5 V 2.5 0.105 at VGS = 2.5 V 2.3 0.120 at VGS = 1.8 V 2.2 0.165 at VGS = 1.5 V 1.9 • • • • • Qg (Typ.)	Original	PDF	Si8808DB 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 si88 SI8808DB-T2-E1 si8808
Untitled Abstract: No abstract text available Text: Si8808DB www.vishay.com Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) MAX. ID (A) a 0.095 at VGS = 4.5 V 2.5 VDS (V) 30 • TrenchFET power MOSFET Qg (TYP.) • Small 0.8 mm x 0.8 mm outline area • Low 0.4 mm max. profile	Original	PDF	Si8808DB 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12
Untitled Abstract: No abstract text available Text: SPICE Device Model Si8808DB www.vishay.com Vishay Siliconix N-Channel 30 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C	Original	PDF	Si8808DB S12-2921-Rev. 10-Dec-12
Untitled Abstract: No abstract text available Text: New Product Si8808DB Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) () Max. ID (A)a 0.095 at VGS = 4.5 V 2.5 0.105 at VGS = 2.5 V 2.3 0.120 at VGS = 1.8 V 2.2 0.165 at VGS = 1.5 V 1.9 • • • • • Qg (Typ.)	Original	PDF	Si8808DB 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12
SI8808DB-T2-E1 Abstract: No abstract text available Text: New Product Si8808DB Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) () Max. ID (A)a 0.095 at VGS = 4.5 V 2.5 0.105 at VGS = 2.5 V 2.3 0.120 at VGS = 1.8 V 2.2 0.165 at VGS = 1.5 V 1.9 • • • • • Qg (Typ.)	Original	PDF	Si8808DB Traceabi72 S12-1766-Rev. 23-Jul-12 SI8808DB-T2-E1
Untitled Abstract: No abstract text available Text: Si8808DB_RC www.vishay.com Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter	Original	PDF	Si8808DB AN609, 3494u 2947u 8691u 3739m 9059m 9927m 6659m 10-Aug-12
SI-8100D Abstract: Si8409DB Si8461 si8466 SI8425 si8812 si8802 SI8466EDB si8489 Si8100DB Text: V I S H AY I N T E R T E C H N O L O G Y, I N C . MOSFETs - World’s Smallest Chipscale MOSFETs AND TEC I INNOVAT O L OGY MICRO FOOT N HN POWER MOSFETs O 19 62-2012 World’s Smallest Chipscale MOSFETs KEY BENEFITS • Smallest MOSFET footprints of 0.8 mm x 0.8 mm, 1 mm x 1 mm, 1.2 mm x 1 mm,	Original	PDF	Si8407DB Si8439DB Si8415DB Si8425DB Si8473EDB Si8413DB Si8487DB Si8409DB Si8483DB Si8499DB SI-8100D Si8461 si8466 SI8425 si8812 si8802 SI8466EDB si8489 Si8100DB
Untitled Abstract: No abstract text available Text: V I S H AY I N T E R T E C H N O L O G Y, I N C . POWER MOSFETs MOSFETs - Extremely Small Chipscale MOSFETs MICRO FOOT Extremely Small Chipscale MOSFETs KEY BENEFITS • Small MOSFET footprints of 0.8 mm x 0.8 mm, 1 mm x 1 mm, 1.2 mm x 1 mm, 1.5 mm x 1 mm, and 2.4 mm x 2 mm	Original	PDF	Si8489EDB Si8902AEDB VMN-PT0107-1402

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Vishay Siliconix SI8808DB-T2-E1

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SI8808 Datasheets (1)

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si88

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SI8808DB-T2-E1

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SI-8100D

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