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    SI88 Price and Stock

    Vishay Siliconix SI8851EDB-T2-E1

    MOSFET P-CH 20V PWR MICRO FOOT
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    DigiKey SI8851EDB-T2-E1 Digi-Reel 10,618 1
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    SI8851EDB-T2-E1 Cut Tape 10,618 1
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    SI8851EDB-T2-E1 Reel 9,000 3,000
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    New Advantage Corporation SI8851EDB-T2-E1 24,000 1
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    Vishay Siliconix SI8817DB-T2-E1

    MOSFET P-CH 20V 4MICROFOOT
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    DigiKey SI8817DB-T2-E1 Reel 9,000 3,000
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    Bristol Electronics SI8817DB-T2-E1 195 13
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    Quest Components SI8817DB-T2-E1 156
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    Vishay Siliconix SI8810EDB-T2-E1

    MOSFET N-CH 20V 2.1A MICROFOOT
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    DigiKey SI8810EDB-T2-E1 Digi-Reel 8,542 1
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    SI8810EDB-T2-E1 Cut Tape 8,542 1
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    SI8810EDB-T2-E1 Reel 6,000 3,000
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    Vishay Siliconix SI8824EDB-T2-E1

    MOSFET N-CH 20V 2.1A MICROFOOT
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    DigiKey SI8824EDB-T2-E1 Reel 6,000 3,000
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    Vishay Siliconix SI8821EDB-T2-E1

    MOSFET P-CH 30V 4MICROFOOT
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    DigiKey SI8821EDB-T2-E1 Cut Tape 5,391 1
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    SI8821EDB-T2-E1 Digi-Reel 5,391 1
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    SI8821EDB-T2-E1 Reel 3,000 3,000
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    Find more SI88 price and stock on Findchips.com

    SI88 Datasheets (237)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SI8800EDB-T2-E1 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 20V MICROFOOT Original PDF
    SI-8800L Sanken Electric Separate Excitation Switching Type with Transformer Original PDF
    SI8802DB-T2-E1 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 8V MICROFOOT Original PDF
    SI8805EDB-T2-E1 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 8V MICROFOOT Original PDF
    SI8806DB-T2-E1 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 12V MICROFOOT Original PDF
    SI8808DB-T2-E1 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 30V MICROFOOT Original PDF
    SI8809EDB-T2-E1 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 20V 1.9A MICROFOOT Original PDF
    SI8810EDB-T2-E1 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 20V 2.1A MICROFOOT Original PDF
    SI-8811L Sanken Electric IC Regulators Original PDF
    SI-8811L Sanken Electric Separate Excitation Switching Type with Transformer Original PDF
    SI8812DB-T2-E1 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 20V MICROFOOT Original PDF
    SI8816EDB-T2-E1 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 30V MICRO FOOT Original PDF
    SI8817DB-T2-E1 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 20V MICROFOOT Original PDF
    SI8819EDB-T2-E1 Vishay Siliconix Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET P-CH 12V 2.9A 4-MICROFOOT Original PDF
    SI8821EDB-T2-E1 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 30V MICRO FOOT Original PDF
    SI8822 Kexin Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor Original PDF
    SI88220BC-IS Silicon Labs Uncategorized - Unclassified - DGTL ISO 5KV 2CH GEN PURP 16SOIC Original PDF
    SI88220BC-ISR Silicon Labs Uncategorized - Unclassified - DGTL ISO 5KV 2CH GEN PURP 16SOIC Original PDF
    SI88220BD-IS Silicon Labs Isolators - Digital Isolators - DGTL ISO 5KV 2CH GEN PURP 16SOIC Original PDF
    SI88220BD-ISR Silicon Labs Isolators - Digital Isolators - DGTL ISO 5KV 2CH GEN PURP 16SOIC Original PDF
    ...

    SI88 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    si88

    Abstract: SI8808DB-T2-E1 si8808
    Text: New Product Si8808DB Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) () Max. ID (A)a 0.095 at VGS = 4.5 V 2.5 0.105 at VGS = 2.5 V 2.3 0.120 at VGS = 1.8 V 2.2 0.165 at VGS = 1.5 V 1.9 • • • • • Qg (Typ.)


    Original     		PDF Si8808DB 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 si88 SI8808DB-T2-E1 si8808

    si8805

    Abstract: si88
    Text: New Product Si8805EDB Vishay Siliconix P-Channel 8 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) -8 RDS(on) () ID (A)a 0.068 at VGS = - 4.5 V - 3.1 0.088 at VGS = - 2.5 V - 2.7 0.155 at VGS = - 1.5 V - 2.1 0.290 at VGS = - 1.2 V - 0.5 • • • •


    Original     		PDF Si8805EDB 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 si8805 si88

    si8812

    Abstract: si88 AGS3
    Text: New Product Si8812DB Vishay Siliconix N-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) () Max. ID (A)a 0.059 at VGS = 4.5 V 3.2 0.061 at VGS = 3.7 V 3.1 0.065 at VGS = 2.5 V 3.0 0.085 at VGS = 1.8 V 2.7 • • • • • Qg (Typ.)


    Original     		PDF Si8812DB 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 si8812 si88 AGS3

    si88

    Abstract: No abstract text available
    Text: Si8800EDB_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,


    Original     		PDF Si8800EDB AN609, 19-May-10 si88

    si8802

    Abstract: No abstract text available
    Text: Si8802DB_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,


    Original     		PDF Si8802DB AN609, 1060u 0709m 9256m 5154u 7987u 8059m 9703m 16-Jun-11 si8802

    Untitled

    Abstract: No abstract text available
    Text: New Product Si8800EDB Vishay Siliconix N-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) (Ω) ID (A)a 0.080 at VGS = 4.5 V 2.8 0.090 at VGS = 2.5 V 2.6 0.105 at VGS = 1.8 V 2.4 0.150 at VGS = 1.5 V 2.0 • Halogen-free According to IEC 61249-2-21


    Original     		PDF Si8800EDB 2002/95/EC 18-Jul-08

    Untitled

    Abstract: No abstract text available
    Text: IC MOSFET SMD Type Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor SI8822 TSSOP-8 • Features Unit: mm ● VDS V = 20V ● ID = 7A (VGS=10V) ● RDS(ON) ＜ 21mΩ (VGS = 10V) ● RDS(ON) ＜ 24mΩ (VGS = 4.5V) ● RDS(ON) ＜ 32mΩ (VGS = 2.5V)


    Original     		PDF SI8822 30VGS

    Si8809EDB

    Abstract: No abstract text available
    Text: New Product Si8809EDB Vishay Siliconix P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) () ID (A)a 0.090 at VGS = - 4.5 V - 2.6 0.119 at VGS = - 2.5 V - 2.3 0.155 at VGS = - 1.8 V - 2.0 • Halogen-free According to IEC 61249-2-21


    Original     		PDF Si8809EDB 2002/95/EC 11-Mar-11

    Untitled

    Abstract: No abstract text available
    Text: New Product Si8802DB Vishay Siliconix N-Channel 8 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () ID (A)a 0.054 at VGS = 4.5 V 3.5 VDS (V) 8 0.060 at VGS = 2.5 V 3.3 0.068 at VGS = 1.8 V 3.1 0.086 at VGS = 1.5 V 2.3 0.135 at VGS = 1.2 V 1.0 • Halogen-free According to IEC 61249-2-21


    Original     		PDF Si8802DB 2002/95/EC 11-Mar-11

    Untitled

    Abstract: No abstract text available
    Text: Si8819EDB www.vishay.com Vishay Siliconix P-Channel 12 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) -12 RDS(on) (Ω) Max. ID (A) a, e 0.080 at VGS = -3.7 V -2.9 0.100 at VGS = -2.5 V -2.6 0.190 at VGS = -1.8 V -1.9 0.280 at VGS = -1.5 V -0.5 MICRO FOOT 0.8 x 0.8


    Original     		PDF Si8819EDB 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: Si8821EDB www.vishay.com Vishay Siliconix P-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) -30 RDS(on) (Ω) Max. ID (A) a, e 0.135 at VGS = -4.5 V -2.3 0.150 at VGS = -3.7 V -2.1 0.215 at VGS = -2.5 V -1.8 MICRO FOOT 0.8 x 0.8 S 3 xxx xx 5.2 nC


    Original     		PDF Si8821EDB 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: Si8808DB www.vishay.com Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) MAX. ID (A) a 0.095 at VGS = 4.5 V 2.5 VDS (V) 30 • TrenchFET power MOSFET Qg (TYP.) • Small 0.8 mm x 0.8 mm outline area • Low 0.4 mm max. profile


    Original     		PDF Si8808DB 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: SPICE Device Model Si8817DB www.vishay.com Vishay Siliconix P-Channel 20 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the p-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C


    Original     		PDF Si8817DB 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: Si8800EDB www.vishay.com Vishay Siliconix N-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A) a 0.080 at VGS = 4.5 V 2.8 VDS (V) 20 0.090 at VGS = 2.5 V 2.6 0.105 at VGS = 1.8 V 2.4 0.150 at VGS = 1.5 V 2.0 MICRO FOOT 0.8 x 0.8 S 3 xxx


    Original     		PDF Si8800EDB 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: SPICE Device Model Si8821EDB www.vishay.com Vishay Siliconix P-Channel 30 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the p-channel vertical DMOS. The sub-circuit model is extracted and optimized over the -55 °C


    Original     		PDF Si8821EDB 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: Si8810EDB Vishay Siliconix N-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () Max. ID (A)a 0.072 at VGS = 4.5 V 2.9 VDS (V) 20 0.079 at VGS = 2.5 V 2.8 0.092 at VGS = 1.8 V 2.6 0.125 at VGS = 1.5 V 2.2 • • • • • Qg (Typ.) 3 nC TrenchFET Power MOSFET


    Original     		PDF Si8810EDB 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Si8809EDB

    Abstract: si8809
    Text: New Product Si8809EDB Vishay Siliconix P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 a RDS(on) () ID (A) 0.090 at VGS = - 4.5 V - 2.6 0.119 at VGS = - 2.5 V - 2.3 0.155 at VGS = - 1.8 V - 2.0 • • • • • • Qg (Typ.) 6 nC MICRO FOOT


    Original     		PDF Si8809EDB 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 si8809

    si88

    Abstract: No abstract text available
    Text: Si8805EDB_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,


    Original     		PDF Si8805EDB AN609, 7264u 0825m 3194m 9302u 8145u 8117m 9794m 20-May-11 si88

    Untitled

    Abstract: No abstract text available
    Text: New Product Si8802DB Vishay Siliconix N-Channel 8 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () ID (A)a 0.054 at VGS = 4.5 V 3.5 VDS (V) 8 0.060 at VGS = 2.5 V 3.3 0.068 at VGS = 1.8 V 3.1 0.086 at VGS = 1.5 V 2.3 0.135 at VGS = 1.2 V 1 • • •


    Original     		PDF Si8802DB 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    Untitled

    Abstract: No abstract text available
    Text: Si8800EDB Vishay Siliconix N-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () ID (A)a 0.080 at VGS = 4.5 V 2.8 VDS (V) 20 0.090 at VGS = 2.5 V 2.6 0.105 at VGS = 1.8 V 2.4 0.150 at VGS = 1.5 V 2.0 • • • • • Qg (Typ.) 3.2 nC TrenchFET Power MOSFET


    Original     		PDF Si8800EDB 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    Untitled

    Abstract: No abstract text available
    Text: SPICE Device Model Si8824EDB www.vishay.com Vishay Siliconix N-Channel 20 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The sub-circuit model is extracted and optimized over the -55 °C


    Original     		PDF Si8824EDB 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: SPICE Device Model Si8808DB www.vishay.com Vishay Siliconix N-Channel 30 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C


    Original     		PDF Si8808DB S12-2921-Rev. 10-Dec-12

    Untitled

    Abstract: No abstract text available
    Text: SPICE Device Model Si8802DB www.vishay.com Vishay Siliconix N-Channel 8 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C


    Original     		PDF Si8802DB 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: Si8824EDB_RC www.vishay.com Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter


    Original     		PDF Si8824EDB AN609, 9497u 8190u 0736m 9485u 7900m 8017m 4353m 03-Sep-14