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    SIB40 Price and Stock

    Vishay Siliconix SIB406EDK-T1-GE3

    MOSFET N-CH 20V 6A PPAK SC75-6
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    DigiKey SIB406EDK-T1-GE3 Digi-Reel 1,873 1
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    SIB406EDK-T1-GE3 Cut Tape 1,873 1
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    SIB406EDK-T1-GE3 Reel 3,000
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    RS SIB406EDK-T1-GE3 Bulk 20
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    Vishay Siliconix SIB404DK-T1-GE3

    MOSFET N-CH 12V 9A PPAK SC75-6
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    Vishay Siliconix SIB408DK-T1-GE3

    MOSFET N-CH 30V 7A PPAK SC75-6
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    Bel Fuse JSIB-40W

    Connector Accessories 40-Hole Phenolic Insulated Panel - Bulk (Alt: JSIB-40W)
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    Avnet Americas JSIB-40W Bulk 10
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    Vishay Intertechnologies SIB406EDK-T1-GE3

    N-CHANNEL 20-V (D-S) MOSFET - Tape and Reel (Alt: SIB406EDK-T1-GE3)
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    Avnet Americas SIB406EDK-T1-GE3 Reel 17 Weeks 3,000
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    Mouser Electronics SIB406EDK-T1-GE3 11,004
    • 1 $0.77
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    Verical SIB406EDK-T1-GE3 295 38
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    Newark SIB406EDK-T1-GE3 Reel 3,000
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    SIB406EDK-T1-GE3 Cut Tape 3,000
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    TTI SIB406EDK-T1-GE3 Reel 6,000 3,000
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    TME SIB406EDK-T1-GE3 3,000
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    Chip1Stop SIB406EDK-T1-GE3 Cut Tape 295
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    EBV Elektronik SIB406EDK-T1-GE3 18 Weeks 3,000
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    Find more SIB40 price and stock on Findchips.com

    SIB40 Datasheets (3)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SIB404DK-T1-GE3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 12V 9A SC-75-6L Original PDF
    SIB406EDK-T1-GE3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 20V 6A SC-75-6 Original PDF
    SIB408DK-T1-GE3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 30V 7A PPAK SC75-6L Original PDF

    SIB40 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: New Product SiB404DK Vishay Siliconix N-Channel 12 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () ID (A)a 0.019 at VGS = 4.5 V 9 VDS (V) 12 0.022 at VGS = 2.5 V 9 0.026 at VGS = 1.8 V 9 0.065 at VGS = 1.2 V 3 • Halogen-free According to IEC 61249-2-21


    Original     		PDF SiB404DK SC-75 2002/95/EC SC-75-6L-Single SiB404DK-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    Untitled

    Abstract: No abstract text available
    Text: SPICE Device Model SiB408DK Vishay Siliconix N-Channel 30 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C


    Original     		PDF SiB408DK 18-Jul-08

    SC-75

    Abstract: SiB408DK-T1-GE3
    Text: New Product SiB408DK Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) ID (A) 0.040 at VGS = 10 V 7a 0.050 at VGS = 4.5 V 7a • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • New Thermally Enhanced PowerPAK®


    Original     		PDF SiB408DK SC-75 2002/95/EC SC-75-6L-Single SiB40lectual 18-Jul-08 SiB408DK-T1-GE3

    Untitled

    Abstract: No abstract text available
    Text: New Product SiB404DK Vishay Siliconix N-Channel 12 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () ID (A)a 0.019 at VGS = 4.5 V 9 VDS (V) 12 0.022 at VGS = 2.5 V 9 0.026 at VGS = 1.8 V 9 0.065 at VGS = 1.2 V 3 • Halogen-free According to IEC 61249-2-21


    Original     		PDF SiB404DK SC-75 2002/95/EC SC-75-6L-Single 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: New Product SiB408DK Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) ID (A) 0.040 at VGS = 10 V 7a 0.050 at VGS = 4.5 V 7a • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • New Thermally Enhanced PowerPAK®


    Original     		PDF SiB408DK SC-75 2002/95/EC SC-75-6L-Single 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: SPICE Device Model SiB404DK Vishay Siliconix N-Channe12 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C


    Original     		PDF SiB404DK N-Channe12 18-Jul-08

    Untitled

    Abstract: No abstract text available
    Text: SPICE Device Model SiB406EDK Vishay Siliconix N-Channel 20 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C


    Original     		PDF SiB406EDK 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    Untitled

    Abstract: No abstract text available
    Text: New Product SiB408DK Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) ID (A) 0.040 at VGS = 10 V 7a 0.050 at VGS = 4.5 V 7a • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • New Thermally Enhanced PowerPAK®


    Original     		PDF SiB408DK SC-75 2002/95/EC SC-75-6L-Single 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    64707

    Abstract: 8844 1.4136 AN609
    Text: SiB406EDK_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/Tank and Cauer/Filter configurations are included. When implemented in P-Spice,


    Original     		PDF SiB406EDK AN609, 16-Dec-08 64707 8844 1.4136 AN609

    SC-75

    Abstract: No abstract text available
    Text: New Product SiB406EDK Vishay Siliconix N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.046 at VGS = 4.5 V 6 0.063 at VGS = 2.5 V 6 VDS (V) 20 • Halogen-free According to IEC 61249-2-21 • TrenchFET Power MOSFET • New Thermally Enhanced PowerPAK®


    Original     		PDF SiB406EDK SC-75 SC-75-6L-Single SiB406EDK-T1-GE3 18-Jul-08

    m 7139 mosfet

    Abstract: AN609
    Text: SiB408DK_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,


    Original     		PDF SiB408DK AN609, 10-Feb-10 m 7139 mosfet AN609

    Untitled

    Abstract: No abstract text available
    Text: New Product SiB404DK Vishay Siliconix N-Channel 12 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () ID (A)a 0.019 at VGS = 4.5 V 9 VDS (V) 12 0.022 at VGS = 2.5 V 9 0.026 at VGS = 1.8 V 9 0.065 at VGS = 1.2 V 3 • Halogen-free According to IEC 61249-2-21


    Original     		PDF SiB404DK SC-75 2002/95/EC SC-75-6L-Single 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    Untitled

    Abstract: No abstract text available
    Text: New Product SiB408DK Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) ID (A) 0.040 at VGS = 10 V 7a 0.050 at VGS = 4.5 V 7a • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • New Thermally Enhanced PowerPAK®


    Original     		PDF SiB408DK SC-75 2002/95/EC SC-75-6L-Single SiB408DK-T1-GE3 11-Mar-11

    Untitled

    Abstract: No abstract text available
    Text: SPICE Device Model SiB406EDK www.vishay.com Vishay Siliconix N-Channel 20 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C


    Original     		PDF SiB406EDK 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: New Product SiB406EDK Vishay Siliconix N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.046 at VGS = 4.5 V 6 0.063 at VGS = 2.5 V 6 VDS (V) 20 • Halogen-free According to IEC 61249-2-21 • TrenchFET Power MOSFET • New Thermally Enhanced PowerPAK®


    Original     		PDF SiB406EDK SC-75 SC-75-6L-Single SiB40electronic 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: SPICE Device Model SiB404DK www.vishay.com Vishay Siliconix N-Channel 12 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C


    Original     		PDF SiB404DK 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: New Product SiB406EDK Vishay Siliconix N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.046 at VGS = 4.5 V 6 0.063 at VGS = 2.5 V 6 VDS (V) 20 • Halogen-free According to IEC 61249-2-21 • TrenchFET Power MOSFET • New Thermally Enhanced PowerPAK®


    Original     		PDF SiB406EDK SC-75 SC-75-6L-Single SiB406EDK-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    Untitled

    Abstract: No abstract text available
    Text: New Product SiB406EDK Vishay Siliconix N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.046 at VGS = 4.5 V 6 0.063 at VGS = 2.5 V 6 VDS (V) 20 • Halogen-free According to IEC 61249-2-21 • TrenchFET Power MOSFET • New Thermally Enhanced PowerPAK®


    Original     		PDF SiB406EDK SC-75 SC-75-6L-Single 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    SC-75

    Abstract: SiB408DK-T1-GE3
    Text: New Product SiB408DK Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) ID (A) 0.040 at VGS = 10 V 7a 0.050 at VGS = 4.5 V 7a • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • New Thermally Enhanced PowerPAK®


    Original     		PDF SiB408DK SC-75 2002/95/EC SC-75-6L-Single SiB40 11-Mar-11 SiB408DK-T1-GE3

    Untitled

    Abstract: No abstract text available
    Text: SPICE Device Model SiB408DK www.vishay.com Vishay Siliconix N-Channel 30 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C


    Original     		PDF SiB408DK 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: New Product SiB408DK Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) ID (A) 0.040 at VGS = 10 V 7a 0.050 at VGS = 4.5 V 7a • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • New Thermally Enhanced PowerPAK®


    Original     		PDF SiB408DK SC-75 2002/95/EC SC-75-6L-Single SiB408DK-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    Untitled

    Abstract: No abstract text available
    Text: New Product SiB404DK Vishay Siliconix N-Channel 12 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () ID (A)a 0.019 at VGS = 4.5 V 9 VDS (V) 12 0.022 at VGS = 2.5 V 9 0.026 at VGS = 1.8 V 9 0.065 at VGS = 1.2 V 3 • Halogen-free According to IEC 61249-2-21


    Original     		PDF SiB404DK SC-75 2002/95/EC SC-75-6L-Single SiB404DK-T1-GE3 11-Mar-11

    Untitled

    Abstract: No abstract text available
    Text: New Product SiB406EDK Vishay Siliconix N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.046 at VGS = 4.5 V 6 0.063 at VGS = 2.5 V 6 VDS (V) 20 • Halogen-free According to IEC 61249-2-21 • TrenchFET Power MOSFET • New Thermally Enhanced PowerPAK®


    Original     		PDF SiB406EDK SC-75 SC-75-6L-Single SiB406EDK-T1-GE3 11-Mar-11

    Untitled

    Abstract: No abstract text available
    Text: V i s h ay I n t e r t e c h n o l o g y, I n c . Power MOSFETs MOSFETs - 1.6 mm x 1.6 mm Footprint with Low On-Resistance PowerPAK SC-75 Ultra-Low On-Resistance, and Ultra-Small Size Key features • PowerPAK® SC-75 provides same tiny 1.6 mm x 1.6 mm footprint as standard SC-75, but with


    Original     		PDF SC-75 SC-75 SC-75, appli32 SiB437EDKT SiB441EDK SiB457EDK SiB433EDK SiB914DK SiB912DK