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Vishay Siliconix SIS438DN-T1-GE3 MOSFET N-CH 20V 16A PPAK 1212-8
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	SIS438DN-T1-GE3	Cut Tape	40,097		1	1 $1.23 10 $0.774 100 $1.23 1000 $0.3602 10000 $0.3602	Buy Now
	SIS438DN-T1-GE3	Digi-Reel	40,097		1	1 $1.23 10 $0.774 100 $1.23 1000 $0.3602 10000 $0.3602	Buy Now
	SIS438DN-T1-GE3	Reel	39,000		3,000	1 - 10 - 100 - 1000 - 10000 $0.31376	Buy Now
Vishay Siliconix SIS434DN-T1-GE3 MOSFET N-CH 40V 35A PPAK 1212-8
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	SIS434DN-T1-GE3	Digi-Reel	10,294		1	1 $1.49 10 $0.942 100 $1.49 1000 $0.44769 10000 $0.44769	Buy Now
	SIS434DN-T1-GE3	Cut Tape	10,294		1	1 $1.49 10 $0.942 100 $1.49 1000 $0.44769 10000 $0.44769	Buy Now
	SIS434DN-T1-GE3	Reel	9,000		3,000	1 - 10 - 100 - 1000 - 10000 $0.39234	Buy Now
RS	SIS434DN-T1-GE3	Bulk			3,000	1 - 10 - 100 - 1000 - 10000 $0.89	Get Quote
Chip 1 Exchange	SIS434DN-T1-GE3		53,380			1 - 10 - 100 - 1000 - 10000 -	Get Quote
New Advantage Corporation	SIS434DN-T1-GE3		57,000		1	1 - 10 - 100 - 1000 - 10000 $0.5714	Buy Now
Vishay Siliconix SIS435DNT-T1-GE3 MOSFET P-CH 20V 30A PPAK1212-8
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	SIS435DNT-T1-GE3	Cut Tape	5,747		1	1 $1.17 10 $0.734 100 $1.17 1000 $0.3395 10000 $0.3395	Buy Now
	SIS435DNT-T1-GE3	Digi-Reel	5,747		1	1 $1.17 10 $0.734 100 $1.17 1000 $0.3395 10000 $0.3395	Buy Now
	SIS435DNT-T1-GE3	Reel	3,000		3,000	1 - 10 - 100 - 1000 - 10000 $0.29524	Buy Now
New Advantage Corporation	SIS435DNT-T1-GE3		9,000		1	1 - 10 - 100 - 1000 - 10000 $0.3385	Buy Now
Vishay Siliconix SIS430DN-T1-GE3 MOSFET N-CH 25V 35A PPAK 1212-8
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	SIS430DN-T1-GE3	Digi-Reel			1	1 $0.64 10 $0.64 100 $0.64 1000 $0.64 10000 $0.64	Buy Now
	SIS430DN-T1-GE3	Cut Tape				1 - 10 - 100 - 1000 - 10000 -	Buy Now
	SIS430DN-T1-GE3	Reel				1 - 10 - 100 - 1000 - 10000 -	Buy Now
RS	SIS430DN-T1-GE3	Bulk			10	1 - 10 $0.7 100 $0.66 1000 $0.59 10000 $0.59	Get Quote
Vishay Siliconix SIS439DNT-T1-GE3 MOSFET P-CH 30V 50A PPAK1212-8S
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	SIS439DNT-T1-GE3	Cut Tape				1 - 10 - 100 - 1000 - 10000 -	Buy Now
	SIS439DNT-T1-GE3	Digi-Reel			1	1 $0.49 10 $0.49 100 $0.49 1000 $0.49 10000 $0.49	Buy Now
	SIS439DNT-T1-GE3	Reel				1 - 10 - 100 - 1000 - 10000 -	Buy Now

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SIS43 Datasheets (27)

Part	Manufacturer	Description	Datasheet Type	PDF
SIS43	Unknown	Small Size, Low Profile SMD type	Original	PDF
SIS43	Xinwang Electronics	SMT Power Inductor	Original	PDF
SIS430DN-T1-GE3	Vishay Siliconix	FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 25V 35A PPAK 1212-8	Original	PDF
SIS43-100	Unknown	Small Size, Low Profile SMD type	Original	PDF
SIS43-101	Delta Electronics	Small Size Low Profile SMD type	Original	PDF
SIS43-102	Delta Electronics	Small Size Low Profile SMD type	Original	PDF
SIS43-150	Delta Electronics	Small Size Low Profile SMD type	Original	PDF
SIS43-151	Delta Electronics	Small Size Low Profile SMD type	Original	PDF
SIS43-1R0	Delta Electronics	Small Size Low Profile SMD type	Original	PDF
SIS43-1R5	Delta Electronics	Small Size Low Profile SMD type	Original	PDF
SIS43-220	Delta Electronics	Small Size Low Profile SMD type	Original	PDF
SIS43-221	Delta Electronics	Small Size Low Profile SMD type	Original	PDF
SIS43-2R2	Delta Electronics	Small Size Low Profile SMD type	Original	PDF
SIS43-330	Delta Electronics	Small Size Low Profile SMD type	Original	PDF

SIS43-331	Delta Electronics	Small Size Low Profile SMD type	Original	PDF
SIS43-3R3	Delta Electronics	Small Size Low Profile SMD type	Original	PDF
SIS43-470	Delta Electronics	Small Size Low Profile SMD type	Original	PDF
SIS43-471	Delta Electronics	Small Size Low Profile SMD type	Original	PDF
SIS434DN-T1-GE3	Vishay Siliconix	FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 40V 35A PPAK 1212-8	Original	PDF
SIS43-4R7	Delta Electronics	Small Size Low Profile SMD type	Original	PDF

SIS43 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
Untitled Abstract: No abstract text available Text: SiS434DN Vishay Siliconix N-Channel 40-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0076 at VGS = 10 V 35 0.0092 at VGS = 4.5 V 35 VDS (V) 40 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • 100 % Rg Tested	Original	PDF	SiS434DN 2002/95/EC SiS434DN-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12
Untitled Abstract: No abstract text available Text: New Product SiS438DN Vishay Siliconix N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a, g 0.0095 at VGS = 10 V 16 0.0125 at VGS = 4.5 V 16 VDS (V) 20 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Gen III Power MOSFET	Original	PDF	SiS438DN 2002/95/EC SiS438DN-T1-GE3 11-Mar-11
Untitled Abstract: No abstract text available Text: New Product SiS436DN Vishay Siliconix N-Channel 25-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a, g 0.0105 at VGS = 10 V 16 0.013 at VGS = 4.5 V 16 VDS (V) 25 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Gen III Power MOSFET	Original	PDF	SiS436DN SiS436DN-T1-GE3 18-Jul-08
Untitled Abstract: No abstract text available Text: New Product SiS436DN Vishay Siliconix N-Channel 25-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a, g 0.0105 at VGS = 10 V 16 0.013 at VGS = 4.5 V 16 VDS (V) 25 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Gen III Power MOSFET	Original	PDF	SiS436DN SiS436DN-T1-GE3 11-Mar-11
Untitled Abstract: No abstract text available Text: SiS430DN Vishay Siliconix N-Channel 25-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0051 at VGS = 10 V 35 0.0069 at VGS = 4.5 V 35 VDS (V) 25 • Halogen-free • TrenchFET Power MOSFET • 100 % Rg Tested • 100 % UIS Tested Qg (Typ.)	Original	PDF	SiS430DN SiS430DN-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12
sis430dn Abstract: No abstract text available Text: SPICE Device Model SiS430DN Vishay Siliconix N-Channel 25-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the - 55 °C to 125 °C Temperature Range	Original	PDF	SiS430DN 18-Jul-08
SiS432DN-T1-GE3 Abstract: No abstract text available Text: SiS432DN Vishay Siliconix N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0046 at VGS = 10 V 35 0.0061 at VGS = 4.5 V 35 VDS (V) 20 • Halogen-free • TrenchFET Power MOSFET • 100 % Rg Tested • 100 % UIS Tested Qg (Typ.)	Original	PDF	SiS432DN SiS432DN-T1-GE3 18-Jul-08
69053 Abstract: AN609 43526 Text: SiS430DN_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/Tank and Cauer/Filter configurations are included. When implemented in P-Spice,	Original	PDF	SiS430DN AN609, 04-Nov-08 69053 AN609 43526
AN609 Abstract: No abstract text available Text: SiS432DN_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/Tank and Cauer/Filter configurations are included. When implemented in P-Spice,	Original	PDF	SiS432DN AN609, 21-Oct-08 AN609
74537 Abstract: 4532 MOSFET AN609 Text: SiS436DN_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/Tank and Cauer/Filter configurations are included. When implemented in P-Spice,	Original	PDF	SiS436DN AN609, 06-Feb-09 74537 4532 MOSFET AN609
Untitled Abstract: No abstract text available Text: SPICE Device Model SiS436DN Vishay Siliconix N-Channel 25-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the - 55 °C to 125 °C Temperature Range	Original	PDF	SiS436DN 18-Jul-08
Untitled Abstract: No abstract text available Text: SPICE Device Model SiS439DNT www.vishay.com Vishay Siliconix P-Channel 30 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the p-channel vertical DMOS. The sub-circuit model is extracted and optimized over the -55 °C	Original	PDF	SiS439DNT 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12
Untitled Abstract: No abstract text available Text: SPICE Device Model SiS434DN www.vishay.com Vishay Siliconix Dual N-Channel 40 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the	Original	PDF	SiS434DN 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12
Untitled Abstract: No abstract text available Text: New Product SiS436DN Vishay Siliconix N-Channel 25-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a, g 0.0105 at VGS = 10 V 16 0.013 at VGS = 4.5 V 16 VDS (V) 25 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Gen III Power MOSFET	Original	PDF	SiS436DN SiS436DN-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

Untitled Abstract: No abstract text available Text: SPICE Device Model SiS438DN Vishay Siliconix N-Channel 20 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C	Original	PDF	SiS438DN 18-Jul-08
Untitled Abstract: No abstract text available Text: New Product SiS438DN Vishay Siliconix N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a, g 0.0095 at VGS = 10 V 16 0.0125 at VGS = 4.5 V 16 VDS (V) 20 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Gen III Power MOSFET	Original	PDF	SiS438DN 2002/95/EC SiS438DN-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12
Untitled Abstract: No abstract text available Text: SPICE Device Model SiS438DN www.vishay.com Vishay Siliconix N-Channel 20 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C	Original	PDF	SiS438DN 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12
Untitled Abstract: No abstract text available Text: New Product SiS436DN Vishay Siliconix N-Channel 25-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a, g 0.0105 at VGS = 10 V 16 0.013 at VGS = 4.5 V 16 VDS (V) 25 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Gen III Power MOSFET	Original	PDF	SiS436DN SiS436DN-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12
Untitled Abstract: No abstract text available Text: New Product SiS438DN Vishay Siliconix N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a, g 0.0095 at VGS = 10 V 16 0.0125 at VGS = 4.5 V 16 VDS (V) 20 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Gen III Power MOSFET	Original	PDF	SiS438DN 2002/95/EC SiS438DN-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12
Untitled Abstract: No abstract text available Text: SiS430DN Vishay Siliconix N-Channel 25-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0051 at VGS = 10 V 35 0.0069 at VGS = 4.5 V 35 VDS (V) 25 • Halogen-free • TrenchFET Power MOSFET • 100 % Rg Tested • 100 % UIS Tested Qg (Typ.)	Original	PDF	SiS430DN SiS430DN-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12
S-8265 Abstract: No abstract text available Text: SiS430DN Vishay Siliconix N-Channel 25-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0051 at VGS = 10 V 35 0.0069 at VGS = 4.5 V 35 VDS (V) 25 • Halogen-free • TrenchFET Power MOSFET • 100 % Rg Tested • 100 % UIS Tested Qg (Typ.)	Original	PDF	SiS430DN SiS430DN-T1-GE3 11-Mar-11 S-8265
Untitled Abstract: No abstract text available Text: New Product SiS438DN Vishay Siliconix N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a, g 0.0095 at VGS = 10 V 16 0.0125 at VGS = 4.5 V 16 VDS (V) 20 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Gen III Power MOSFET	Original	PDF	SiS438DN 2002/95/EC SiS438DN-T1-GE3 11-Mar-11
Untitled Abstract: No abstract text available Text: SiS432DN Vishay Siliconix N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0046 at VGS = 10 V 35 0.0061 at VGS = 4.5 V 35 VDS (V) 20 • Halogen-free • TrenchFET Power MOSFET • 100 % Rg Tested • 100 % UIS Tested Qg (Typ.)	Original	PDF	SiS432DN SiS432DN-T1-GE3 11-Mar-11
SIS43 Abstract: SIS43-100 SIS43-150 SIS43-1R0 SIS43-1R5 SIS43-220 SIS43-2R2 SIS43-330 SIS43-3R3 SIS43-4R7 Text: SMT Power Inductor SIS43 Type Features • ■ ■ ■ ■ ■ Small size 6.6mm*4.45mm , low profile (2.9mm max. height) SM D type. Unshielded, suitable for high density mounting. High energy storage and low DCR. Provided with embossed carrier tape packing.	OCR Scan	PDF	SIS43 0-1000uH SIS43-1R5 SIS43-2R2 SIS43-3R3 SIS43-4R7 SIS43-6R8 SIS43-100 SIS43-150 SIS43-220 SIS43-1R0 SIS43-330

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SIS43 Price and Stock

Vishay Siliconix SIS438DN-T1-GE3

Vishay Siliconix SIS434DN-T1-GE3

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Vishay Siliconix SIS439DNT-T1-GE3

SIS43 Datasheets (27)

SIS43 Datasheets Context Search

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sis430dn

SiS432DN-T1-GE3

69053

AN609

74537

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SIS43