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    T0204AE Search Results

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    Untitled

    Abstract: No abstract text available
    Text: PD - 91392C RADIATION HARDENED POWER MOSFET THRU-HOLE T0-204AE IRH9250 200V, P-CHANNEL RAD Hard HEXFET TECHNOLOGY Product Summary Part Number Radiation Level R DS(on) IRH9250 100K Rads (Si) 0.315Ω IRH93250 300K Rads (Si) 0.315Ω ID -14A -14A International Rectifier’s RADHard HEXFET® technology provides high performance power MOSFETs for


    Original     		91392C T0-204AE) IRH9250 IRH93250 The25Â -600A/Â -200V, MIL-STD-750, MlL-STD-750, PDF

    Untitled

    Abstract: No abstract text available
    Text: This N-Channel Power MOSFETs z > Material National COOLFETsTM Semiconductor Copyrighted Case Style Pd W Tc = 25°C V D SS (V) Min l0 @ Tc = 25°C (A) Tc = 100°C (A) IRF350CF T0-204AE (42) T0-3P (43) T0-3P (43) TO-204AE (42) TO-3P (43) T0-3P (43) 150 400


    OCR Scan     		hSD113D T-39-01 PDF

    IXGH17N100

    Abstract: No abstract text available
    Text: BIXYS jjjjjB jjj Low VCHH0IGBT High speed IGBT IXGH/IXGM17N100 IXGH/IXGM17 N100A VC E S ^C25 v C E sat 1000 V 1000 V 34 A 34 A 3.5 V 4.0 V « Symbol Test Conditions Maximum Ratings VCES Tj = 25°C to 150°C 1000 V VCGR Tj = 25°C to 150°C; RGE = 1 M fi


    OCR Scan     		IXGH/IXGM17N100 IXGH/IXGM17 N100A O-247 IXGH17N100 PDF

    RFK30N12

    Abstract: RFK30N15
    Text: Standard Power MOSFETs RFK30N12, RFK30N15 File Number 1455 Power MOS Field-Effect Transistors N-Channel Enhancement-Mode Power Field-Effect Transistors TERMINAL DIAGRAM D 30 A, 120 V - 150 V ros on =0.075 Q Features: • SO A is power-dissipation lim ited


    OCR Scan     		RFK30N12, RFK30N15 9ZCS-337 RFK30N12 RFK30N15* B2CS-376S7 AN-7254 AN-7260. RFK30N15 PDF

    1RFZ44

    Abstract: 1RL520 1RFZ22 IRFZ30 IRFZ41 1RFZ40 IRF145 1RL540 IRFZ45 1xys
    Text: - f f t * £ fê Ta=25^ M € tí: € t V d s Vg s or Vd g * (V) 1RFZ35 1RFZ40 IR IR N N IRFZ42 IRFZ44 1RFZ45 IRH150 IRH254 1RH450 IR IR ¡R IR IR IR N N N N N N IRL51Q 1RL52Q IRL530 IRL540 IRLZ14 1RLZ24 IRLZ34 1RLZ44 1XTH5N100 IR IR IR IR IR IR IR IR IXYS


    OCR Scan     		Ta-25Â IRFZ35 O-220AB 1RFZ40 IRFZ42 3TO-220 IRL510 O-220 IRL511 1RFZ44 1RL520 1RFZ22 IRFZ30 IRFZ41 IRF145 1RL540 IRFZ45 1xys PDF

    irf9110

    Abstract: SOT-123 IRF224 irf113 1rf48 BUZ10 BUZ63 IRF9122 irfl33 IRF034
    Text: - 250 - Ta=25<1C f m € tt € t Vd s or 4- V d g Vg s (V) (V) If l: * /CH * /CH (A) (W) V g s th) 1DSS Jg s s Pd Id max (nA) Vg s (V) C m A) Vd s (V) (V) (V) Id (mA) ff] % ft 1± Ciss (max) *typ V g s ( 0 ) (V) *typ (A) Id (A) 140* -25 TO-220AB 190* 25 TO-220AB


    OCR Scan     		1RF9Z32 O-220AB 1RF48 IRF034 BUZ171 O-220ftB irf120 to-204aa irf9110 SOT-123 IRF224 irf113 BUZ10 BUZ63 IRF9122 irfl33 PDF

    IRF449

    Abstract: irf362 irf413 IRF352 IRF353 IRF360 IRF421 IRF430 IRF433 IRF441
    Text: - 25 2 - Mi m *± « % Vds Vg s or * Vd g % 1RF35! IRF353 IR !R IR IRF360 IRF362 IRF420 IRF421 IRF422 IRF423 IRF430 IRF431 IRF432 IRF433 IRF440 IRF441 IRF442 IRF443 IRF448 IRF449 IRF450 IRF451 IRF452 IRF453 IRF460 IRF462 IRF510 IR IR IR IR IR IR IR IR IR IR


    OCR Scan     		Ta-25 IRF352 IRF353 IRF360 O-204AE IRF362 TQ-204AE IRF421 O-3150 O-204AA IRF449 irf362 irf413 IRF352 IRF353 IRF360 IRF421 IRF430 IRF433 IRF441 PDF

    2N6155

    Abstract: BUZ23 SIEMENS siemens Ni 1000 4900 SIEMENS BUZ10 BUZ54 BUZ11 BUZ24 BSS92 BUZ64
    Text: - 314 - f M % tt € BSS92 6SS100 BSStOI SIEMENS SIEMENS SIEMENS SIEMENS SIEMENS SIEMENS SIEMENS SIEMENS SIEMENS SIEMENS P N N BUZ6Û BUZ64 BUZZI BUZ72A BUZ73A BUZ74A BUZ76A BUZ80 8UZ211 2N6659 2N6660 2N6661 2N6TS5 2N67 56 f- + SIEMENS SIEMENS SIEMENS SIEMENS


    OCR Scan     		SSS6N60 O-220 8SS89 BSS92 8SS100 O-220AB BUZ171 O-220ftB irf120 to-204aa 2N6155 BUZ23 SIEMENS siemens Ni 1000 4900 SIEMENS BUZ10 BUZ54 BUZ11 BUZ24 BUZ64 PDF

    SOT-123

    Abstract: IRF9110 PHILIPS TO220 blf544b BLF246 BLF348 irc224 IRC350 IRC530 IRC832
    Text: - % % A f ft i Vd s or Vd g tt £ i T Vg s Ta=25'C) «É. Ig s s Id Pd * /C H * /CH (W) Vds (V) Id (nA) g fs Io(on) C ís s Coss ft B m ♦typ Vg s (V) (0) Id (A) * ty p (A) Vg s (V) *typ (S) Id (max) (max) (max) % (A) (pF) (pF) (pF) Vd s (V) % (V) P '200 ± 2 0


    OCR Scan     		2k6847 o-205af 2n6849 2n6851 OT-268 BIF548 OT-262 IRF9Z10 O-220 SOT-123 IRF9110 PHILIPS TO220 blf544b BLF246 BLF348 irc224 IRC350 IRC530 IRC832 PDF

    IRF140R

    Abstract: IRF141R IRF142R IRF143R
    Text: .Rugged Power MOSFETs File Number 2001 IRF140R, IRF141R IRF142R, IRF143R Avalanche Energy Rated N-Channel Power MOSFETs 27A and 24A, 60V-100V rDs on = 0.085fl and 0.110 N-CHANNEL ENHANCEMENT MODE Features: • Single pulse avalanche energy rated ■ SOA is power-dissipation lim ited


    OCR Scan     		IRF140R, IRF141R IRF142R, IRF143R 0V-100V IRF141R, IRF142R IRF143R 92CS-42639 IRF140R IRF141R PDF

    61CMQ050

    Abstract: 61-CMQ-050 120CNQ045 66PQ040 60CMQ050 60HQ100 60cmq 120CNQ030 130CNQ030 61-cmq
    Text: I N T E RNfATIONAL H E RECTIFIER D I 4a 55452 ooiaoas1 i | Schottky Rectifiers 60 T O 160 A M P S Part Number ' f a v TC VR W M (A) <°C) 120 120 - fR M @ VFM ® Ti = 125SC& 'fm Rated V,RW M (mA) (A) Max. Tj Case Style <°C) 175 175 175 175 175 T0-204AE


    OCR Scan     		125SC& 60CDQ030 60CDQ035 SD241 60CDQ040 60CDQ045 60CMQ030 60CMQ035 60CMQ040 60CMQ045 61CMQ050 61-CMQ-050 120CNQ045 66PQ040 60CMQ050 60HQ100 60cmq 120CNQ030 130CNQ030 61-cmq PDF

    MTP2P45

    Abstract: MTP4N90 MTP6N6 MTP8N45 IRF840 SELECTION GUIDE MTP3N80 MTH8P20 MTP3N6 MTP1N95 MTP2N85
    Text: POWER TRANSISTORS — TMOS continued V b R(DSS) (V olt*) M in (Ohms) M ax (Amp) 500 6 3 D S (o n ) @ >D Device 450 MTM2P50 >D(Contl (Amp) M ax PD @ TC = 25-C (W atts) M ax Package 2 75 204AA MTP2P50 220AB MTM2P45 204AA 220A8 MTP2P45 200 0.7 4 MTM8P20 1 2.5


    OCR Scan     		O-218 O-22QAB MTM2P50 204AA MTP2P50 220AB MTM2P45 MTP2P45 MTP2P45 MTP4N90 MTP6N6 MTP8N45 IRF840 SELECTION GUIDE MTP3N80 MTH8P20 MTP3N6 MTP1N95 MTP2N85 PDF

    irf411

    Abstract: IRF413 IRF449 IRF448 irf362 IRF352 IRF353 IRF360 IRF421 IRF430
    Text: - 252 - Mi X m % *± « * % Vd s or Vdg V £ Vg s Pd Id * /CH (V) 11 fé (Ta= 25 tJ) (A) Vg s th) I d ss I g ss * /CH <W) min (nA) Vg s (V) (u A ) Vd s (V) (V) Id («A ) fó f Ds(on) Vrs= Vg s max (V) % te (Ta=25cO ) I d ( on) C i ss g fs Coss C rss % &


    OCR Scan     		Ta-25 IRF352 IRF353 IRF360 O-204AE IRF362 TQ-204AE IRF421 IRF448 TQ-204AA irf411 IRF413 IRF449 IRF448 irf362 IRF352 IRF353 IRF360 IRF421 IRF430 PDF

    1XYS

    Abstract: 1RFZ40 IRFZ41 1XTH5N100 1RLZ34 IRFZ35 IRFZ42 IRFZ44 IRH254 IRL510
    Text: - f M € tí: € ft t V ds Vg s or Vd g * V (V) 1RFZ35 1RFZ40 IR IR N N IRFZ42 IRFZ44 1RFZ45 IRH150 IRH254 1RH450 IR IR ¡R IR IR IR N N N N N N 50 60 60 100 250 500 IRL51Q 1RL52Q IRL530 IRL540 IRLZ14 1RLZ24 IRLZ34 1RLZ44 1XTH5N100 IR IR IR IR IR IR IR


    OCR Scan     		Ta-25Â IRFZ35 O-220AB 1RFZ40 IRFZ42 T0-247 IXTH6N80A O-247 IXTH10N100 1XYS IRFZ41 1XTH5N100 1RLZ34 IRFZ44 IRH254 IRL510 PDF

    DF378F

    Abstract: df103b FT03E I36S PCF35N08 RFK35N08 RFK35N10 ba nuts 0166 415 04 1 060 Hall 01E
    Text: 3875081 G E SOLID STATE -01 DE 1• 3fl75Dfll GDiaSDa ¡i I T - Z I'O I Rower MOSFET Chips File Number 1530 PCF35N08 N-Channel Enhancement-Mode Power Field-Effect Transistor Chip 80 V, 35 A, 0.055 O Features: ■ Contact metallization: Gate and source-aluminum


    OCR Scan     		PCF35N08 source-10-mil Number-09288 PCF35N08- RFK35N08 RFK35N10 NR231A DF103B DF378F NRJ31A DF378F df103b FT03E I36S PCF35N08 RFK35N10 ba nuts 0166 415 04 1 060 Hall 01E PDF

    TA9229

    Abstract: rca 9228 d TA9228 rca9229d RCA-9229 RCA9228D
    Text: 3875081 G E SOLID STATE 01E 17323 D Darlington Power Transistors F ile N u m b e r 1448 RCA9228A, RCA9228B, RCA9228C, RCA9228D RCA9229A, RCA9229B, RCA9229C, RCA9229D 50-A Complementary High Current,


    OCR Scan     		RCA9228A, RCA9228B, RCA9228C, RCA9228D RCA9229A, RCA9229B, RCA9229C, RCA9229D cs-27si» T0-204AE TA9229 rca 9228 d TA9228 rca9229d RCA-9229 PDF

    GaN 20A

    Abstract: No abstract text available
    Text: D64DV5,6,7 D64EV5,6,7 File Number 2361 50-Ampere N-P-N Darlington Power T ransistors TERMINAL DESIGNATIONS c FLANGE Features: • High speed t$ < 5.0 /jsec., tr < 3.0 Aisec. ■ High voltage: 400-500 Vq ^q POWER TRANSISTORS ■ High gain: 50 minimum @ 50 amperes, I q


    OCR Scan     		D64DV5 D64EV5 50-Ampere D64DV D64EV T0-204AE GaN 20A PDF

    s0241

    Abstract: su-241 60CDQ SD241 40CDQ s0241 c 40CDQ045 60CDQ045 rectifier to3
    Text: IN TE RNATIONAL RECTIFIER 4855452 SS INTERNATIONAL RECTIFIER . d F | 4 ö S S 4 S E GDOSCH? 7 ~ f ~ Data Sheet No. PD-2.058B 55C 0 5 0 9 7 INTERNATIONAL RECTIFIER I R r- * 3-0 f 40CDQ Gl60CDQ SERIES AND SDS41 4 0 and 60 Amp Dual Schottky Center Tap Rectifiers


    OCR Scan     		G0D5D17 40CDQ 60CDQ SDS41 40CDQ SD241 s0241 su-241 s0241 c 40CDQ045 60CDQ045 rectifier to3 PDF

    60HQ100

    Abstract: JANTX1N6392
    Text: International Government and Space liQ R lR e c t i f i e r Schottky Diode Hermetic Packages 8-60 Amps Case Part Number VRRM V 'F(AV) @ (A) Tc •f (AV) @ t c VFM @ >FM 25°C(V) (C) Outline !r M @ v RWM 25°C(mA) Max. Tj Number (1) 5EQ100 8EQ045 100 45 8


    OCR Scan     		5EQ100 8EQ045 15CLQ100 20CLQ045 30FQ045 1N6391 JAN1N6391 JANTX1N6391 JANTXV1N6391 00-203AA 60HQ100 JANTX1N6392 PDF

    circuits of IRF150

    Abstract: IRF150-152
    Text: HARRIS IBM50/151/152/153 IRF150R/151R/152R/153R N -Channel Power MOSFETs Avalanche Energy Rated* August 19 9 1 Package Features TO -2Q 4AE • 33A and 40A, 60V - 100V • rDS on = 0 .0 5 5 ÎÎ and 0 .0 8 fi DRAIN (FLANGE) y SOURCE • Single Pulse Avalanche Energy Rated*


    OCR Scan     		IBM50/151/152/153 IRF150R/151R/152R/153R IRF150, IRF151, IRF152, IRF153 IRF150R, IRF151R, IRF152R, IRF153R circuits of IRF150 IRF150-152 PDF

    transistor 9721

    Abstract: 9721 mosfet to3
    Text: International S Rectifier PD-9.721 A IRGAC30F INSULATED GATE BIPOLAR TRANSISTOR Fast Speed IGBT Description Product Summary Insulated Gate Bipolar Transistors IGBTs from International Rectifier have higher current den­ sities than comparable bipolar transistors, while


    OCR Scan     		IRGAC30F DD10bl5 transistor 9721 9721 mosfet to3 PDF

    IRH250

    Abstract: TO-254AA Package IRHF130 IRHF230 hexfets IRHM450 IRHM150 IRHG110
    Text: RADIATION HARD HEXFETs — INTERNATIONAL RECTIFIER 2bE INTERNATIONAL RECTIFIER IT O R D 4ÔSS4S2 GOlDSbö 1 T-3Ì-Ò3 • RADIATION HARD HEXFETS N-CHANNEL Types Vos V 1q com R d s io n max) TC - 25°C 'dm pulsed Pd max n A A W Bulletin Case Style SMD-1


    OCR Scan     		IRHN25Q IRHN450 IRHE120 IRHE130 MO-Q36B M0036AB IRHG110 T0-205AF IRHF130 IRHF230 IRH250 TO-254AA Package hexfets IRHM450 IRHM150 PDF

    N73M

    Abstract: No abstract text available
    Text: N-Channel Power MOSFETs National Semiconductor COOLFETs TM GO m 3: M o >D A °9 (nC) Max C|W (pF) Min Max Com (pF) M in Max C|*a (PF) Min Max 0.24 8 120 3000 600 200 F3 0.25 0^4 8 120 3000 600 200 F3 4 0.25 0.24 8 120 3000 600 200 F3 2 4 0.25 0.32 7 120


    OCR Scan     		IRF350CF IRFP350CF IRFP351CF IRF450CF IRFP450CF IRFP451CF T0-204AE N73M PDF

    IXYS CS 2-12

    Abstract: No abstract text available
    Text: □IXYS IXFH 15N60 IXFH 20N60 HiPerFET Power MOSFETs •TM IXFH/FM 15N60 IXFH/FM 20N60 IXFM 15N60 IXFM 20N60 □ V DSS ^D25 600 V 600 V 15 A 20 A DS on K 0.50 Q. 250 ns 0.35 Q 250 ns N-Channel Enhancement Mode High dv/dt, L o w trr, HDMOS Family TO-247 AD


    OCR Scan     		15N60 20N60 O-247 IXYS CS 2-12 PDF