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    t20 N06V

    Abstract: T20N06V
    Text: MTD20N06V Power Field Effect Transistor N−Channel DPAK This device is a new technology designed to achieve an on−resistance area product about one−half that of standard MOSFETs. This new technology more than doubles the present cell density of our 50 and 60 V devices. This device is designed to withstand high energy


    Original     		PDF MTD20N06V MTD20N06V/D t20 N06V T20N06V

    T20N06V

    Abstract: t20 N06V N06V MTD20N06VT4 t20n06
    Text: MTD20N06V Power Field Effect Transistor N−Channel DPAK TMOS V is a new technology designed to achieve an on−resistance area product about one−half that of standard MOSFETs. This new technology more than doubles the present cell density of our 50 and 60


    Original     		PDF MTD20N06V MTD20N06V/D T20N06V t20 N06V N06V MTD20N06VT4 t20n06

    T20N06V

    Abstract: t20 N06V t20n06 N06V T20N06V datasheet MTD20N06VT4 MTD20N06V AN569
    Text: MTD20N06V Power Field Effect Transistor N−Channel DPAK TMOS V is a new technology designed to achieve an on−resistance area product about one−half that of standard MOSFETs. This new technology more than doubles the present cell density of our 50 and 60


    Original     		PDF MTD20N06V MTD20N06V/D T20N06V t20 N06V t20n06 N06V T20N06V datasheet MTD20N06VT4 MTD20N06V AN569