t20 N06V
Abstract: T20N06V
Text: MTD20N06V Power Field Effect Transistor N−Channel DPAK This device is a new technology designed to achieve an on−resistance area product about one−half that of standard MOSFETs. This new technology more than doubles the present cell density of our 50 and 60 V devices. This device is designed to withstand high energy
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MTD20N06V
MTD20N06V/D
t20 N06V
T20N06V
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T20N06V
Abstract: t20 N06V N06V MTD20N06VT4 t20n06
Text: MTD20N06V Power Field Effect Transistor N−Channel DPAK TMOS V is a new technology designed to achieve an on−resistance area product about one−half that of standard MOSFETs. This new technology more than doubles the present cell density of our 50 and 60
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Original
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PDF
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MTD20N06V
MTD20N06V/D
T20N06V
t20 N06V
N06V
MTD20N06VT4
t20n06
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T20N06V
Abstract: t20 N06V t20n06 N06V T20N06V datasheet MTD20N06VT4 MTD20N06V AN569
Text: MTD20N06V Power Field Effect Transistor N−Channel DPAK TMOS V is a new technology designed to achieve an on−resistance area product about one−half that of standard MOSFETs. This new technology more than doubles the present cell density of our 50 and 60
|
Original
|
PDF
|
MTD20N06V
MTD20N06V/D
T20N06V
t20 N06V
t20n06
N06V
T20N06V datasheet
MTD20N06VT4
MTD20N06V
AN569
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