IRFF210
Abstract: TB334
Text: IRFF210 Data Sheet March 1999 2.2A, 200V, 1.500 Ohm, N-Channel Power MOSFET • 2.2A, 200V Formerly developmental type TA17442. Ordering Information PACKAGE 1887.3 Features This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed,
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IRFF210
TA17442.
IRFF210
TB334
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IRFD210
Abstract: TB334
Text: IRFD210 Data Sheet July 1999 0.6A, 200V, 1.500 Ohm, N-Channel Power MOSFET • 0.6A, 200V • rDS ON = 1.500Ω • Single Pulse Avalanche Energy Rated • SOA is Power Dissipation Limited • Nanosecond Switching Speeds • Linear Transfer Characteristics
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IRFD210
TB334
TA17442.
IRFD210
TB334
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IRFD210
Abstract: No abstract text available
Text: IRFD210 Data Sheet Title FD 0 bt 6A, 0V, 00 m, an- 0.6A, 200V, 1.500 Ohm, N-Channel Power MOSFET Features This advanced power MOSFET is designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. These are
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IRFD210
TB334
IRFD210
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TA17441
Abstract: No abstract text available
Text: IRFF110 Data Sheet Title FF1 bt 5A, 0V, 00 m, March 1999 3.5A, 100V, 0.600 Ohm, N-Channel Power MOSFET Features This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of
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IRFF110
IRFF110
O-205AF
TB334
TA17441
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irf710 datasheet
Abstract: IRF710 IRF710 and its equivalent TB334
Text: IRF710 Data Sheet January 2002 2.0A, 400V, 3.600 Ohm, N-Channel Power MOSFET This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of
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IRF710
O-220AB
irf710 datasheet
IRF710
IRF710 and its equivalent
TB334
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intersil irf610
Abstract: IRF610 TB334 power MOSFET IRF610
Text: IRF610 Data Sheet June 1999 3.3A, 200V, 1.500 Ohm, N-Channel Power MOSFET This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of
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IRF610
TA17442.
intersil irf610
IRF610
TB334
power MOSFET IRF610
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ifr110
Abstract: TA17441 IFU110 IRFR110 IRFU110 TB334 intersil 4373
Text: IRFR110, IRFU110 Data Sheet 4.7A, 100V, 0.540 Ohm, N-Channel Power MOSFETs These are N-Channel enhancement mode silicon gate power field effect transistors designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. These advanced
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IRFR110,
IRFU110
ifr110
TA17441
IFU110
IRFR110
IRFU110
TB334
intersil 4373
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IFR-410
Abstract: IFU410 IFR410 irfu410
Text: IRFR410, IRFU410 S E M I C O N D U C T O R 1.5A, 500V, 7.0 Ohm, N-Channel Power MOSFETs January 1998 Features Description • 1.5A, 500V These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a
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IRFR410,
IRFU410
TA17445.
IFR-410
IFU410
IFR410
irfu410
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IRF610
Abstract: power MOSFET IRF610 IRF611 irf610 mosfet irf612
Text: IRF610, IRF611, IRF612, IRF613 S E M I C O N D U C T O R 2.6A and 3.3A, 150V and 200V, 1.5 and 2.4 Ohm, N-Channel Power MOSFETs November 1997 Features Description • 2.6A and 3.3A, 150V and 200V These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power
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IRF610,
IRF611,
IRF612,
IRF613
TA17442.
IRF610
power MOSFET IRF610
IRF611
irf610 mosfet
irf612
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MOSFET 200v 20A n.channel
Abstract: IRF614 TB334
Text: IRF614 2.0A, 250V, 2.0 Ohm, N-Channel Power MOSFET January 1998 Features Description • 2.0A, 250V • Linear Transfer Characteristics This is an N-Channel enhancement mode silicon gate power field effect transistor. It is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified
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IRF614
TA17443
MOSFET 200v 20A n.channel
IRF614
TB334
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IRF610
Abstract: TB334 power MOSFET IRF610 IRF61
Text: IRF610 Data Sheet January 2002 3.3A, 200V, 1.500 Ohm, N-Channel Power MOSFET This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of
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IRF610
TA17442.
IRF610
TB334
power MOSFET IRF610
IRF61
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Untitled
Abstract: No abstract text available
Text: IRFF210, IRFF211, IRFF212, IRFF213 S E M I C O N D U C T O R 1.8A, and 2.2A, 150V and 200V, 1.5 and 2.4 Ohm, N-Channel Power MOSFETs January 1998 Features Description • 1.8A and 2.2A, 150V to 200V These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power
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IRFF210,
IRFF211,
IRFF212,
IRFF213
TA17442.
IRFF213
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IRFF113
Abstract: TA17441
Text: IRFF110, IRFF111, IRFF112, IRFF113 S E M I C O N D U C T O R 3.0A and 3.5A, 80V and 100V, 0.6 and 0.8 Ohm, N-Channel Power MOSFETs January 1998 Features Description • 3.0A and 3.5A, 80V and 100V These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power
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IRFF110,
IRFF111,
IRFF112,
IRFF113
TA17441.
IRFF113
TA17441
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irf510
Abstract: IRF511 irf512 jrf512 TA17441
Text: if* ? S IRF510, IRF511, IRF512, IRF513 S e m ico n d ucto r y 7 4.9A, and 5.6A, 80V and 100V, 0.54 and 0.74 Ohm, N-Channel Power MOSFETs January 1998 Description Features 4.9A, and 5.6A, 80V and 100V High Input Impedance These are N-Channel enhancement mode silicon gate
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OCR Scan
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IRF510,
IRF511,
IRF512,
IRF513
RF510,
RF512,
RF513
irf510
IRF511
irf512
jrf512
TA17441
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Untitled
Abstract: No abstract text available
Text: IRF510 S e m iconductor Data Sheet June 1999 5.6A, 100V, 0.540 Ohm, N-Channel Power MOSFET This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of
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OCR Scan
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IRF510
O-220AB
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Untitled
Abstract: No abstract text available
Text: IRFD310 Semiconductor D ata S h eet Ju ly 1999 0.4A, 400V, 3.600 Ohm, N-Channel Power MOSFET • 0.4A, 400V • r DS ON = 3 .6 0 0 i2 • Single Pulse Avalanche Energy Rated • SOA is Power Dissipation Limited • Nanosecond Switching Speeds • Linear Transfer Characteristics
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OCR Scan
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IRFD310
TB334
TA17444.
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TRANSISTORS 132 GD
Abstract: No abstract text available
Text: tyvvys S IRFD310, IRFD311, IRFD312, IRFD313 S e m ico n d ucto r y 7 0.3A and 0.4A, 350V and 400V, 3.6 and 5.0 Ohm, N-Channel Power MOSFETs July 1998 Features Description • 0.3A and 0.4A, 350V and 400V • High Input Impedance These are N-Channel enhancement mode silicon gate
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OCR Scan
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IRFD310,
IRFD311,
IRFD312,
IRFD313
TRANSISTORS 132 GD
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irff113
Abstract: TA17441 SS1020
Text: h a f r r is IRFF110, IRFF111, IRFF112, IRFF113 3.0A and 3.5A, 80V and 100V, 0.6 and 0.8 O hm , N-Channel Power MOSFETs January 1998 Features Description • 3.0A and 3.5A, 80V and 100V These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power
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OCR Scan
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IRFF110,
IRFF111,
IRFF112,
IRFF113
TA17441.
RFF113
irff113
TA17441
SS1020
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Untitled
Abstract: No abstract text available
Text: IRFD210 Semiconductor Data Sheet July 1999 0.6A, 200V, 1.500 Ohm, N-Channel Power MOSFET • 0.6A, 200V • rDS ON = 1-500i2 • Single Pulse Avalanche Energy Rated • SOA is Power Dissipation Limited • Nanosecond Switching Speeds • Linear Transfer Characteristics
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OCR Scan
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IRFD210
1-500i2
TA17442.
TB334
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PDF
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Untitled
Abstract: No abstract text available
Text: IRF610 Semiconductor Data Sheet June 1999 3.3A, 200V, 1.500 Ohm, N-Channel Power MOSFET This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of
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OCR Scan
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IRF610
1-500i2
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Untitled
Abstract: No abstract text available
Text: IRFR410, IRFU410 S e m iconductor D ata S h eet 1.5A, 500V, 7.000 Ohm, N-Channel Power MOSFETs These are N-Channel enhancem ent mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a
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OCR Scan
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IRFR410,
IRFU410
000i2
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TA17444
Abstract: No abstract text available
Text: IRF710 Semiconductor Data Sheet June 1999 2.0A, 400V, 3.600 Ohm, N-Channel Power MOSFET This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of
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OCR Scan
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IRF710
O-220AB
TA17444
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PDF
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TA17442
Abstract: TA-1744
Text: IRFF210, IRFF211, IRFF212, IRFF213 HARRIS S E M I C O N D U C T O R A.BA, January 1998 and 2.2A, 150V and 200V, 1.5 and 2.4 Ohm, N-Channel Power MOSFETs Features Description • 1 .8A and 2.2A, 150V to 200V These are N-Channel enhancement mode silicon gate
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OCR Scan
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IRFF210,
IRFF211,
IRFF212,
IRFF213
TB334
RFF210,
RFF211,
RFF212,
IRFF213
TA17442
TA-1744
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PDF
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Untitled
Abstract: No abstract text available
Text: IRF614 HARRIS S E M I C O N D U C T O R 2.0A, 250V, 2.0 Ohm, N-Channel Power MOSFET January 1998 Description Features 2.0A, 250V Linear Transfer Characteristics This is an N-Channel enhancement mode silicon gate power field effect transistor. It is an advanced power MOSFET
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OCR Scan
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IRF614
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