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    TO-5 AMPS PNP TRANSISTOR Search Results

    TO-5 AMPS PNP TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TO-5 AMPS PNP TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    FZT951

    Abstract: FZT953 fzt853 FZT851 DSA003718
    Text: FZT951 FZT953 SOT223 PNP SILICON PLANAR HIGH CURRENT HIGH PERFORMANCE TRANSISTORS ISSUE 3 - APRIL 2000 FEATURES * 5 Amps continuous current , up to 15 Amps peak current * Very low saturation voltages * Excellent gain characteristics specified up to 10 Amps


    Original     		PDF FZT951 FZT953 OT223 FZT951 FZT851 FZT853 FZT953 fzt853 FZT851 DSA003718

    FZT953

    Abstract: FZT853 FZT851 FZT951
    Text: FZT951 FZT953 SOT223 PNP SILICON PLANAR HIGH CURRENT HIGH PERFORMANCE TRANSISTORS ISSUE 2 - OCTOBER 1995 FEATURES * 5 Amps continuous current , up to 15 Amps peak current * Very low saturation voltages * Excellent gain characteristics specified up to 10 Amps


    Original     		PDF FZT951 FZT953 OT223 FZT951 FZT851 FZT853 FZT953 FZT853 FZT851

    Untitled

    Abstract: No abstract text available
    Text: FZT951 FZT953 SOT223 PNP SILICON PLANAR HIGH CURRENT HIGH PERFORMANCE TRANSISTORS ISSUE 3 - APRIL 2000 FEATURES * 5 Amps continuous current , up to 15 Amps peak current * Very low saturation voltages * Excellent gain characteristics specified up to 10 Amps


    Original     		PDF FZT951 FZT953 OT223 FZT951 FZT851 FZT853

    Untitled

    Abstract: No abstract text available
    Text: PNP SILICON PLANAR MEDIUM POWER HIGH CURRENT TRANSISTOR ZTX956 ISSUE 3 – JUNE 94 FEATURES * 2 Amps continuous current * Up to 5 Amps peak current * Very low saturation voltage * Excellent gain characteristics up to 2 Amps * Spice model available C B E E-Line


    Original     		PDF ZTX956 100ms

    F2T951

    Abstract: taml ic 1240 FZT851 FZT853 FZT951 FZT953 LFZT951 LB1200
    Text: SOT223 PNP SILICON PLANAR HIGH CURRENT HIGH PERFORMANCE TRANSISTORS m ISSUE 2- OCTOBER 1995 FEATURES ‘ 5 Amps continuous current, * Very low saturation voltages * Excellent * PtOt. 3 watts ‘ F2T951 exhibts ‘CEl$at) up to 15 Amps peak current gain characteristics


    Original     		PDF OT223 F2T951 FZT953 FZT853 FZT951 taml ic 1240 FZT851 FZT853 FZT951 FZT953 LFZT951 LB1200

    Untitled

    Abstract: No abstract text available
    Text: Transistors SMD Type PNP Silicon Planar High Current Transistors FZT951 SOT-223 +0.2 3.50-0.2 0.1max +0.05 0.90-0.05 +0.2 6.50-0.2 5 Amps continuous current , up to 15 Amps peak current. Very low saturation voltages. +0.1 3.00-0.1 +0.15 1.65-0.15 Features


    Original     		PDF FZT951 OT-223 FZT951 -500mA -100mA, -10mA -100mA -200mA -10mA,

    BTP955L3

    Abstract: No abstract text available
    Text: Spec. No. : C607L3 Issued Date : 2005.02.04 Revised Date : 2006.06.23 Page No. : 1/5 CYStech Electronics Corp. PNP Epitaxial Planar High Current High Performance Transistor BTP955L3 Features • 4 Amps continuous current, up to 10 Amps peak current • Very low saturation voltage


    Original     		PDF C607L3 BTP955L3 OT-223 UL94V-0 BTP955L3

    Untitled

    Abstract: No abstract text available
    Text: Spec. No. : C607J3-A Issued Date : 2006.06.07 Revised Date : Page No. : 1/5 CYStech Electronics Corp. PNP Epitaxial Planar High Current High Performance Transistor BTP955J3 Features • 4 Amps continuous current, up to 10 Amps peak current • Very low saturation voltage


    Original     		PDF C607J3-A BTP955J3 O-252 UL94V-0

    smd transistor 2A

    Abstract: FZT951 ic 1240
    Text: Transistors SMD Type PNP Silicon Planar High Current Transistors FZT951 SOT-223 +0.2 3.50-0.2 0.1max +0.05 0.90-0.05 +0.2 6.50-0.2 5 Amps continuous current , up to 15 Amps peak current. Very low saturation voltages. +0.1 3.00-0.1 +0.15 1.65-0.15 Features


    Original     		PDF FZT951 OT-223 FZT951 -500mA -100mA, -10mA -100mA -200mA -10mA, smd transistor 2A ic 1240

    CYStech Electronics

    Abstract: sot-223 code marking BTP953L3
    Text: Spec. No. : C657L3 Issued Date : 2005.01.07 Revised Date : 2005.03.04 Page No. : 1/6 CYStech Electronics Corp. PNP Epitaxial Planar High Current High Performance Transistor BTP953L3 Features • 5 Amps continuous current, up to 10 Amps peak current • Very low saturation voltage


    Original     		PDF C657L3 BTP953L3 OT-223 UL94V-0 CYStech Electronics sot-223 code marking BTP953L3

    FZT953

    Abstract: continuous current Amps peak current Very saturated smd transistor 2A
    Text: Transistors SMD Type PNP Silicon Planar High Current Transistors FZT953 SOT-223 Unit: mm 0.1max +0.05 0.90-0.05 5 Amps continuous current , up to 15 Amps peak current. Very low saturation voltages. +0.1 3.00-0.1 +0.15 1.65-0.15 +0.2 3.50-0.2 +0.2 6.50-0.2


    Original     		PDF FZT953 OT-223 -400mA -10mA, -100mA, 50MHz -200mA FZT953 continuous current Amps peak current Very saturated smd transistor 2A

    Untitled

    Abstract: No abstract text available
    Text: Transistors SMD Type PNP Silicon Planar High Current Transistors FZT953 SOT-223 Unit: mm 0.1max +0.05 0.90-0.05 5 Amps continuous current , up to 15 Amps peak current. Very low saturation voltages. +0.1 3.00-0.1 +0.15 1.65-0.15 +0.2 3.50-0.2 +0.2 6.50-0.2


    Original     		PDF FZT953 OT-223 -200mA -400mA -10mA, -100mA, 50MHz

    FCX1051A

    Abstract: FCX1151A DSA003684
    Text: SOT89 PNP SILICON POWER SWITCHING TRANSISTOR FCX1151A ISSUE 1 - NOVEMBER 1998 FEATURES * 2W POWER DISSIPATION * * * * 5A Peak Pulse Current Excellent HFE Characteristics up to 5 Amps Extremely Low Saturation Voltage E.g. 60mv Typ. Extremely Low Equivalent On-resistance;


    Original     		PDF FCX1151A FCX1051A 100ms FCX1051A FCX1151A DSA003684

    Untitled

    Abstract: No abstract text available
    Text: SOT89 PNP SILICON POWER SWITCHING TRANSISTOR FCX1151A ISSUE 1 - NOVEMBER 1998 FEATURES * 2W POWER DISSIPATION * * * * 5A Peak Pulse Current Excellent HFE Characteristics up to 5 Amps Extremely Low Saturation Voltage E.g. 60mv Typ. Extremely Low Equivalent On-resistance;


    Original     		PDF FCX1151A FCX1051A 100ms

    GL159

    Abstract: No abstract text available
    Text: CORPORATION GL159 Description ISSUED DATE :2005/07/19 REVISED DATE :2005/12/09C PNP SILICON PLANAR HIGH CURRENT TRANSISTOR The GL159 is designed for general purpose switching and amplifier applications. Features 5 Amps continuous current, up to 15Amps peak current


    Original     		PDF GL159 2005/12/09C GL159 15Amps 10Amps OT-223

    2N5005

    Abstract: TO-210AA Package TO-59 Package to-210AA 2N5005 JANTX 2N5003
    Text: 2N5003 and 2N5005 PNP POWER SILICON TRANSISTOR Available on commercial versions Qualified per MIL-PRF-19500/535 Qualified Levels: JAN, JANTX, and JANTXV DESCRIPTION This high speed transistor is rated at 5 amps and is military qualified up to a JANTXV level.


    Original     		PDF 2N5003 2N5005 MIL-PRF-19500/535 2N5005. MIL-PRF-19500/535 T4-LDS-0237, 2N5005 TO-210AA Package TO-59 Package to-210AA 2N5005 JANTX

    MARKING SMD PNP TRANSISTOR 2a

    Abstract: smd transistor 2A FCX1151A MARKING 25 SMD PNP TRANSISTOR TRANSISTOR SMD PNP 1A
    Text: Transistors SMD Type PNP Silicon Power Switching Transistor FCX1151A Features 2W power dissipation. 5A peak pulse current. Excellent HFE characteristics up to 5 Amps. Extremely low saturation voltage E.g. 60mv Typ. Extremely low equivalent on-resistance. RCE sat 66mÙ at 3A.


    Original     		PDF FCX1151A -250mA -10mA -50mA, 50MHz -20mA MARKING SMD PNP TRANSISTOR 2a smd transistor 2A FCX1151A MARKING 25 SMD PNP TRANSISTOR TRANSISTOR SMD PNP 1A

    2N5003

    Abstract: No abstract text available
    Text: 2N5003 and 2N5005 PNP POWER SILICON TRANSISTOR Available on commercial versions Qualified per MIL-PRF-19500/535 Qualified Levels: JAN, JANTX, and JANTXV DESCRIPTION This high speed transistor is rated at 5 amps and is military qualified up to a JANTXV level.


    Original     		PDF 2N5003 2N5005 MIL-PRF-19500/535 2N5005. MIL-PRF-19500/535 T4-LDS-0237,

    741 IC

    Abstract: 2N5093 741i IC 741 to 2N5415 2N3868 2N4930 2N4931 2N5091 2N5096
    Text: NEW ENGLAND SEMICONDUCTOR BIPOLAR PNP TRANSISTOR TO-39/TO-5 PACKAGE PNP TO-39 PNP TO-5 » I 1 sus VOLTS Ic (max) AMPS 2N3867 40 3 >[email protected]/3 [email protected]/.25 6 60 2N3868 60 3 >[email protected]/3 [email protected]/.25 6 60 2N4930 200 .05 [email protected]/10 [email protected]/.001 5 10* 2N4931 250 .05


    OCR Scan     		PDF O-39/TO-5 2N3867 2N3868 2N4930 2N4931 2N5091 2N5093 2N5094 2N5096 2N5149 741 IC 741i IC 741 to 2N5415

    2N5415

    Abstract: No abstract text available
    Text: NEW ENGLAND SEMICONDUCTOR BIPOLAR PNP TRANSISTOR TO-39/TO-5 PACKAGE PNP TO-39 PNP TO-5 tr 1 V ceo Ic hFE@ V VcE VcE sat (sus) VOLTS (max) AMPS (min/max @ A/V) @ IC/IB (V @ A/A) 2N3867 40 3 >[email protected]/3 2N3868 60 3 2N4930 200 2N4931 p * rD Ìt WATTS (MHz) [email protected]/.25


    OCR Scan     		PDF O-39/TO-5 2N3867 2N3868 2N4930 2N4931 2N5094 2N5149 2N5153 2N5415

    Transistor 2N5093

    Abstract: 2N5091 7 amps pnp transistor 2N5416A 2N5096 "PNP Transistor" 2N5093 2N5094 2N5149 2N5151
    Text: N EW ENGLAND SEMICONDUCTOR BIPOLAR PNP TRANSISTOR TO-39/TO-5 PACKAGE PNP TO-39 Jff /1 PNP TO-5 Jff Uf V eto sus VOLTS Ic ^FE IC/ VCE DEVICE TYPE (max) (min/max AMPS @ A/V) 2N3867A 40 3 >[email protected]/3 2N3868A 60 3 2N5091 300 2N5093 V CE(sat) @ I c/I b (V @ A/A)


    OCR Scan     		PDF O-39/TO-5 2N3867A 2N3868A 2N5091 2N5093 2N5094 2N5096 2N5149 2N5151 2N5153 Transistor 2N5093 7 amps pnp transistor 2N5416A "PNP Transistor"

    2N5581A

    Abstract: No abstract text available
    Text: NEW ENGLAND SEMICONDUCTOR SMALL SIGNAL PNP TRANSISTOR TO-46 PACKAGE PNP TO-46 1 I IH hpE @ IC/ Vce min/max @ mA/V VcEO sus VOLTS Ic (max) AMPS 2N2604 45 0.03 [email protected]/5 2N2605 45 0.03 [email protected]/5 2N2944AA 10 0.1 2N2945 20 2N2945AA DEVICE TYPE VcE<sat) @ Ic^B


    OCR Scan     		PDF 2N2604 2N2605 2N2944AA 2N2945 2N2945AA 2N2946 2N2946AA 2N3485 2N3485AA 2N3486 2N5581A

    2N4033

    Abstract: 2N3494 2N5415
    Text: NEW ENGLAND SEMICONDUCTOR SMALL SIGNAL PNP TRANSISTOR TO-5/TO205AD/TO-39 V cE O Ic PACKAGE DEVICE TYPE sus VOLTS (max) AMPS TO-5 T0205AD 2N1132A 2N2800 2N2904 2N2904AA 2N2905 2N2905AA 2N5415 2N5416 2N3467 2N3468 2N3494 2N3495 2N3634 2N3635 2N3636 2N3637


    OCR Scan     		PDF O-5/TO205AD/TO-39 T0205AD 2N1132A 2N2800 2N2904 2N2904AA 2N2905 2N2905AA 2N5415 2N5416 2N4033 2N3494

    40411 transistor

    Abstract: transistor 40411 TO-59 Package npn 40411 sdn6253 2N6571 SDN6251 2NXXXX MJ480 jedec Package TO-39
    Text: 880 0 0 79 8 8 2 5 4 0 2 2 S IL IC O N TRANSISTOR CORP. NUMERICAL INDEX TO INDUSTRIAL GRADE POWER TRANSISTORS Continued flö Polarity lc Max Amps 2N6465 2N6466 2N6468 2N6469 2N6470 NPN NPN PNP PNP NPN 4.0 4.0 4.0 15.0 15.0 110 130 130 50 50 TO-66 TO-66 TO-66


    OCR Scan     		PDF 2N6465 2N6466 2N6468 2N6469 2N6470 2N6471 2N6472 2N6495 2N6496 2N6500 40411 transistor transistor 40411 TO-59 Package npn 40411 sdn6253 2N6571 SDN6251 2NXXXX MJ480 jedec Package TO-39