Radar
Abstract: PH1214-12M radar 77 ghz
Text: Radar Pulsed Power Transistor 12 Watts, 1.20-1.40 GHz PH1214-12M PH1214-12M Radar Pulsed Power Transistor - 12 Watts, 1.20-1.40 GHz, 150 µS Pulse, 10% Duty 1 Features • • • • • • • • Outline Drawing NPN Silicon Microwave Power Transistor Common Base Configuration
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PH1214-12M
PH1214-12M
pul2266,
Radar
radar 77 ghz
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b 595 transistor
Abstract: transistor 5 Amp 700 volt MA4T24300 transistor b 595 MA4T24335
Text: Silicon Bipolar High fT Low Noise Medium Power 12 Volt Transistor MA4T243 Series MA4T243 Series Silicon Bipolar High fT Low Noise Medium Power 12 Volt Transistors Features • • • • • Case Style Low Phase Noise Oscillator Transistor 200 mW Driver Amplifier Transistor
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MA4T243
MA4T24300
b 595 transistor
transistor 5 Amp 700 volt
transistor b 595
MA4T24335
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Untitled
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DAT BFG35 NPN 4 GHz wideband transistor Product specification Supersedes data of 1995 Sep 12 1999 Aug 24 NXP Semiconductors Product specification NPN 4 GHz wideband transistor DESCRIPTION BFG35 PINNING NPN planar epitaxial transistor
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BFG35
OT223
MSB002
OT223.
R77/03/pp14
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Untitled
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DAT BFG198 NPN 8 GHz wideband transistor Product specification 1995 Sep 12 NXP Semiconductors Product specification NPN 8 GHz wideband transistor DESCRIPTION BFG198 PINNING NPN planar epitaxial transistor in a plastic SOT223 envelope, intended
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BFG198
OT223
MSB002
OT223.
R77/03/pp14
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TRANSISTOR GENERAL DIGITAL L6
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DATA SHEET BFG35 NPN 4 GHz wideband transistor Product specification Supersedes data of 1995 Sep 12 1999 Aug 24 NXP Semiconductors Product specification NPN 4 GHz wideband transistor DESCRIPTION BFG35 PINNING NPN planar epitaxial transistor
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BFG35
OT223
BFG35
MSB002
OT223.
R77/03/pp14
771-BFG35-T/R
TRANSISTOR GENERAL DIGITAL L6
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BFG35
Abstract: TRANSISTOR GENERAL DIGITAL L6 BFG35 amplifier
Text: DISCRETE SEMICONDUCTORS DATA SHEET BFG35 NPN 4 GHz wideband transistor Product specification Supersedes data of 1995 Sep 12 1999 Aug 24 NXP Semiconductors Product specification NPN 4 GHz wideband transistor DESCRIPTION BFG35 PINNING NPN planar epitaxial transistor
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BFG35
OT223
MSB002
OT223.
R77/03/pp14
BFG35
TRANSISTOR GENERAL DIGITAL L6
BFG35 amplifier
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BFG198
Abstract: microstripline
Text: DISCRETE SEMICONDUCTORS DATA SHEET BFG198 NPN 8 GHz wideband transistor Product specification 1995 Sep 12 NXP Semiconductors Product specification NPN 8 GHz wideband transistor DESCRIPTION BFG198 PINNING NPN planar epitaxial transistor in a plastic SOT223 envelope, intended
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BFG198
OT223
MSB002
OT223.
R77/03/pp14
BFG198
microstripline
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transistor DATA REFERENCE handbook
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DATA SHEET BFG17A NPN 3 GHz wideband transistor Product specification File under Discrete Semiconductors, SC14 1995 Sep 12 Philips Semiconductors Product specification NPN 3 GHz wideband transistor DESCRIPTION BFG17A PINNING NPN wideband transistor in a
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BFG17A
OT143
MSB014
OT143.
transistor DATA REFERENCE handbook
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BFG35
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DATA SHEET BFG35 NPN 4 GHz wideband transistor Product specification Supersedes data of 1995 Sep 12 1999 Aug 24 Philips Semiconductors Product specification NPN 4 GHz wideband transistor DESCRIPTION BFG35 PINNING NPN planar epitaxial transistor
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BFG35
OT223
MSB002
OT223.
125006/03/pp16
BFG35
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55LT
Abstract: No abstract text available
Text: 1014 - 12 12 Watt - 28 Volts, Class C Microwave 1000 - 1400 MHz GENERAL DESCRIPTION CASE OUTLINE The 1014-12 is a COMMON BASE transistor capable of providing 12 Watts of Class C, RF output power over the band 1000-1400 MHz. This transistor is designed for Microwave Broadband Class C amplifier applications. It includes
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200mA
55LT
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MBB754
Abstract: BFG198 npn 2222 transistor
Text: DISCRETE SEMICONDUCTORS DATA SHEET BFG198 NPN 8 GHz wideband transistor Product specification File under Discrete Semiconductors, SC14 1995 Sep 12 Philips Semiconductors Product specification NPN 8 GHz wideband transistor DESCRIPTION BFG198 PINNING NPN planar epitaxial transistor in a
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BFG198
OT223
MSB002
OT223.
MBB754
BFG198
npn 2222 transistor
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BFG198
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DATA SHEET BFG198 NPN 8 GHz wideband transistor Product specification File under Discrete Semiconductors, SC14 1995 Sep 12 Philips Semiconductors Product specification NPN 8 GHz wideband transistor DESCRIPTION BFG198 PINNING NPN planar epitaxial transistor in a
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BFG198
OT223
MSB002
OT223.
CGY2020G
SCA50
647021/1200/01/pp12
BFG198
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20191
Abstract: No abstract text available
Text: ERICSSON $ PTB 20191 12 Watts,1.78 -1.92 GHz RF Power Transistor Preliminary Key Features Description The 20191 is a class AB RF Power Transistor intended for 26 VDC operation across 1.78-1.92 GHz frequency band. It is rated at 12 Watts minimum output power (CW) or 15 Watts output power (PEP).
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100mA
20191
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20191 ic
Abstract: No abstract text available
Text: e PTB 20191 12 Watts, 1.78–1.92 GHz RF Power Transistor Description The 20191 is a class AB, NPN, common emitter RF power transistor intended for 26 Vdc operation from 1.78 to 1.92 GHz. It is rated at 12 watts CW minimum output power, or 15 watts (PEP) output power.
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1-877-GOLDMOS
1301-PTB
20191 ic
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NEL130681-12
Abstract: NEL1306 2SC3542 NEL1300 NEL13208I-12 2SC3541 J425 75E5 NEL132081-12 NEL1320
Text: CLASS A, 1.3 GHz, 12 VOLT POWER TRANSISTOR FEATURES NEL130681-12 NEL13208I-12 DESCRIPTION • HIGH LINEAR POWER AND GAIN: N E L 1306: P idB = 3 8 dBm , G id B = 7.5 dB T Y P N EC 's N E L 1 3 0 0 series of N P N epitaxial microwave power transistor is designed specifically for large volum e mobile and
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NEL130681-12
NEL13208I-12
NEL1306:
NEL1320:
NEL1300
10pFMAX
1000pF
30dBm
38dBm
NEL1306
2SC3542
NEL13208I-12
2SC3541
J425
75E5
NEL132081-12
NEL1320
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pseudomorphic HEMT
Abstract: CF003-03 Hemt transistor
Text: GaAs Pseudomorphic HEMT Transistor July 2008 - Rev 19-Jul-08 CF003-03 Features Low Noise Figure 1 dB @ 12 GHz High Gain: 10 dB at 12 GHz P1dB Power: 20 dBm Wafer Qualification Procedure Customer Wafer Selection Available General Description Mimix CF003-03 GaAs-based transistor is a 600 um gate width,
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19-Jul-08
CF003-03
CF003-03
CF003-03-000X
pseudomorphic HEMT
Hemt transistor
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Untitled
Abstract: No abstract text available
Text: GaAs Pseudomorphic HEMT Transistor July 2008 - Rev 19-Jul-08 CF003-03 Features Low Noise Figure 1 dB @ 12 GHz High Gain: 10 dB at 12 GHz P1dB Power: 20 dBm Wafer Qualification Procedure Customer Wafer Selection Available General Description Mimix CF003-03 GaAs-based transistor is a 600 um gate width,
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19-Jul-08
CF003-03
CF003-03
for-000X
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BFG16A
Abstract: CTS100
Text: DISCRETE SEMICONDUCTORS DATA SHEET BFG16A NPN 2 GHz wideband transistor Product specification Supersedes data of November 1992 File under Discrete Semiconductors, SC14 1995 Sep 12 Philips Semiconductors Product specification NPN 2 GHz wideband transistor FEATURES
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BFG16A
OT223
CGY2020G
SCA50
647021/1200/01/pp12
BFG16A
CTS100
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MBB284
Abstract: BFG35 amplifier
Text: DISCRETE SEMICONDUCTORS DATA SHEET BFG35 NPN 4 GHz wideband transistor Product specification Supersedes data of November 1992 File under discrete semiconductors, SC14 1995 Sep 12 Philips Semiconductors Product specification NPN 4 GHz wideband transistor DESCRIPTION
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BFG35
OT223
BFG55.
BFG35
MSB002
OT223.
MBB284
BFG35 amplifier
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transistor DATA REFERENCE handbook
Abstract: BFG16A philips transistor handbook transistor bfg16a
Text: DISCRETE SEMICONDUCTORS DATA SHEET BFG16A NPN 2 GHz wideband transistor Product specification Supersedes data of November 1992 File under Discrete Semiconductors, SC14 1995 Sep 12 Philips Semiconductors Product specification NPN 2 GHz wideband transistor FEATURES
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BFG16A
OT223
MSB00
transistor DATA REFERENCE handbook
BFG16A
philips transistor handbook
transistor bfg16a
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bfg97
Abstract: BFG31
Text: DISCRETE SEMICONDUCTORS DATA SHEET BFG31 PNP 5 GHz wideband transistor Product specification Supersedes data of November 1992 File under Discrete Semiconductors, SC14 1995 Sep 12 Philips Semiconductors Product specification PNP 5 GHz wideband transistor FEATURES
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BFG31
OT223
MSB002
bfg97
BFG31
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Untitled
Abstract: No abstract text available
Text: ERICSSON í PTB 20191 12 Watts, 1 . 7 8 - 1 . 9 2 GHz RF P o wer Transistor Description The 20191 is a class AB, N PN, common emitter RF power transistor intended for 26 Vdc operation from 1.78 to 1.92 GHz. It is rated at 12 watts CW minimum output power, or 15 watts (PEP) output power.
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NEL130681-12
Abstract: J425 NEL1306 NEL1300 2SC3542
Text: CLASS A, 1.3 GHz, 12 VOLT POWER TRANSISTOR NEL130681-12 NEL13208I-12 FEATURES DESCRIPTION • HIGH LINEAR POWER AND GAIN: NEL1306: PidB = 38 dBm, GidB - 7.5 dB TYP NEL1320: PidB = 43 dBm, GidB - 6 dB TYP NEC's NEL1300 series of NPN epitaxial microwave power
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NEL1306:
NEL1320:
NEL130681-12
NEL13208I-12
NEL1300
10pFM
1000pF
NEL132081-12
J425
NEL1306
2SC3542
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Untitled
Abstract: No abstract text available
Text: - 1 ! 2SC » • 023SbOS 0004701 I H S I E 6 u‘ NPN Silicon RF Broadband Transistor SIEMENS AKTIENfiESELLSCHAF . D T~3/~13 BFT 12 —1 BFT 12 is an epitaxial NPN silicon planar RF transistor in a plastic package similar to
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023SbOS
Q62702-F390
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