TRANSISTOR NPN 5GHz
Abstract: 2SC4805 transistor frequency 1.5GHz gain 20 dB
Text: Transistor 2SC4805 Silicon NPN epitaxial planer type For 2GHz band low-noise amplification Unit: mm 2.1±0.1 • Features 0.425 0.3–0 0.65 1.3±0.1 +0.1 1.25±0.1 1 0.65 ● High transition frequency fT. S-Mini type package, allowing downsizing of the equipment and
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2SC4805
TRANSISTOR NPN 5GHz
2SC4805
transistor frequency 1.5GHz gain 20 dB
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2SC3904
Abstract: transistor frequency 1.5GHz gain 20 dB
Text: Transistor 2SC3904 Silicon NPN epitaxial planer type For 2GHz band low-noise amplification Unit: mm +0.2 2.8 –0.3 1.45 0.95 3 +0.1 1.9±0.2 0.65±0.15 1 0.95 +0.2 ● 0.65±0.15 High transition frequency fT. Mini type package, allowing downsizing of the equipment and
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2SC3904
2SC3904
transistor frequency 1.5GHz gain 20 dB
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XP05543
Abstract: No abstract text available
Text: Composite Transistors XP05543 Silicon NPN epitaxial planer transistor Unit: mm For amplification of the low frequency 1 6 2 5 3 4 0 to 0.1 2SC3904 x 2 elements 0.12 –0.02 0.9±0.1 ● 0.7±0.1 • Basic Part Number of Element +0.05 0.2 ● High transition frequency fT.
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XP05543
2SC3904
XP05543
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2sc2570
Abstract: 2SC2570A IC GA-08 2SC2570A-T PA33
Text: DATA SHEET NPN SILICON TRANSISTOR 2SC2570A HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR DESCRIPTION The 2SC2570A is designed for use in Low Noise Amplifier of VHF & UHF stages. FEATURES • Low noise and high gain : NF = 1.5 dB TYP., Ga = 8 dB TYP. @f = 1.0 GHz, VCE = 10 V, IC = 5.0 mA
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2SC2570A
2SC2570A
2SC2570A-T
500-pcs
2sc2570
IC GA-08
2SC2570A-T
PA33
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2SC4805
Abstract: No abstract text available
Text: Transistor 2SC4805 Silicon NPN epitaxial planer type For 2GHz band low-noise amplification Unit: mm 2.1±0.1 • Features 0.425 0.3–0 0.65 1.3±0.1 +0.1 1.25±0.1 1 0.65 ● High transition frequency fT. S-Mini type package, allowing downsizing of the equipment and
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2SC4805
2SC4805
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2SC3904
Abstract: No abstract text available
Text: Transistor 2SC3904 Silicon NPN epitaxial planer type For 2GHz band low-noise amplification Unit: mm +0.2 2.8 –0.3 1.45 0.95 3 +0.1 1.9±0.2 0.65±0.15 1 0.95 +0.2 ● 0.65±0.15 High transition frequency fT. Mini type package, allowing downsizing of the equipment and
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2SC3904
2SC3904
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XN6543
Abstract: 2SC3904 9y marking NPN
Text: Composite Transistors XN6543 Silicon NPN epitaxial planer transistor Unit: mm +0.2 For low-noise amplification 2GHz band 2.8 –0.3 +0.25 1.5 –0.05 (Ta=25˚C) Symbol Ratings Unit Collector to base voltage VCBO 15 V Rating Collector to emitter voltage of
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XN6543
2SC3904
XN6543
2SC3904
9y marking NPN
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TA4020FT
Abstract: 60GHz transistor 60Ghz TESQ
Text: TA4020FT TOSHIBA Linear Integrated Circuit Silicon-Germanium Monolithic TA4020FT ○ UHF LOW NOISE AMPLIFIER APPLICATION Unit: mm 1.2±0.05 ・Thin Extreme Super mini Quad Package 4pin :TESQ 0.9±0.05 High Gain: • Lead free article |S21e| =15.0dB (@ f=1.5GHz)
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TA4020FT
TA4020FT
60GHz transistor
60Ghz
TESQ
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Untitled
Abstract: No abstract text available
Text: TA4020FT TOSHIBA Linear Integrated Circuit Silicon-Germanium Monolithic TA4020FT Unit: mm ○ UHF LOW NOISE AMPLIFIER APPLICATION 1.2±0.05 ・Thin Extreme Super mini Quad Package 4pin :TESQ 0.9±0.05 NF=0.95dB (@ f=1.5GHz) 2 • High Gain: • Lead free article
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TA4020FT
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60Ghz
Abstract: TA4020FT rf transistor frequency 1.5GHz gain 20 dB
Text: TA4020FT TOSHIBA Linear Integrated Circuit Silicon-Germanium Monolithic TA4020FT Unit: mm ○ UHF LOW NOISE AMPLIFIER APPLICATION 1.2±0.05 ・Thin Extreme Super mini Quad Package 4pin :TESQ 0.9±0.05 NF=0.95dB (@ f=1.5GHz) 2 • High Gain: • Lead free article
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TA4020FT
60Ghz
TA4020FT
rf transistor frequency 1.5GHz gain 20 dB
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2SC3904
Abstract: No abstract text available
Text: Composite Transistors XP05543 Silicon NPN epitaxial planer transistor Unit: mm For amplification of the low frequency 1.25±0.1 0.65 High transition frequency fT. Two elements incorporated into one package. 6 2 5 3 4 • Absolute Maximum Ratings Parameter
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XP05543
2SC3904
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Untitled
Abstract: No abstract text available
Text: BFP405 NPN Silicon RF Transistor • For low current applications 3 • For oscillators up to 12 GHz 2 4 • Noise figure F = 1.25 dB at 1.8 GHz 1 outstanding Gms = 23 dB at 1.8 GHz • SIEGET 25 GHz fT - Line • Pb-free RoHS compliant package • Qualified according AEC Q101
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BFP405
OT343
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RF TRANSISTOR 10GHZ
Abstract: BFP405 10GHz oscillator RF TRANSISTOR 10GHZ low noise TRANSISTOR NPN 5GHz BGA420 BFP405 ALs 2n2222+spice+model
Text: BFP405 NPN Silicon RF Transistor • For low current applications 3 • For oscillators up to 12 GHz 2 4 • Noise figure F = 1.25 dB at 1.8 GHz 1 outstanding Gms = 23 dB at 1.8 GHz • SIEGET 25 GHz fT - Line • Pb-free RoHS compliant package • Qualified according AEC Q101
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BFP405
OT343
RF TRANSISTOR 10GHZ
BFP405
10GHz oscillator
RF TRANSISTOR 10GHZ low noise
TRANSISTOR NPN 5GHz
BGA420
BFP405 ALs
2n2222+spice+model
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Untitled
Abstract: No abstract text available
Text: BFP405 Low Noise Silicon Bipolar RF Transistor • For low current applications 3 • For oscillators up to 12 GHz 2 4 • Minimum noise figure NFmin = 1.25 dB at 1.8 GHz 1 Outstanding Gms = 23 dB at 1.8 GHz • Pb-free RoHS compliant and halogen-free package
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BFP405
AEC-Q101
OT343
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9y marking
Abstract: 2SC3904 XN06543 XN6543
Text: Composite Transistors XN06543 XN6543 Silicon NPN epitaxial planer transistor Unit: mm +0.2 For low-noise amplification (2GHz band) 2.8 –0.3 +0.25 1.5 –0.05 3 0.4±0.2 Parameter (Ta=25˚C) Symbol Ratings Unit Collector to base voltage VCBO 15 V Rating Collector to emitter voltage
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XN06543
XN6543)
2SC3904
9y marking
2SC3904
XN06543
XN6543
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9y marking
Abstract: 2SC3904 XN06543 XN6543
Text: Composite Transistors XN06543 XN6543 Silicon NPN epitaxial planer transistor 3 2 0.30+0.10 –0.05 0.50+0.10 –0.05 • Basic Part Number of Element 10° 1.1+0.2 –0.1 2SC3904 x 2 elements ■ Absolute Maximum Ratings 0 to 0.1 ● (Ta=25˚C) Parameter
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XN06543
XN6543)
2SC3904
9y marking
2SC3904
XN06543
XN6543
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2SC5363
Abstract: transistor frequency 1.5GHz gain 20 dB
Text: Transistor 2SC5363 Tentative Silicon NPN epitaxial planer type For low-voltage high-frequency amplification Unit: mm 1.6±0.15 0.8±0.1 0.4 +0.1 0.5 1 3 0.5 ● High transition frequency fT. Small collector output capacitance Cob. SS-Mini type package, allowing downsizing of the equipment
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2SC5363
transistor frequency 1.5GHz gain 20 dB
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a1091 transistor
Abstract: No abstract text available
Text: Ordering number : ENA1091A 2SC5490A RF Transistor 10V, 30mA, fT=8GHz, NPN Single SSFP http://onsemi.com Features • • • • • • Low-noise : NF=0.9dB typ f=1GHz : NF=1.4dB typ (f=1.5GHz) Low-voltage, low-current operation (VCE=1V, IC=1mA) : fT=3.5GHz typ
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ENA1091A
2SC5490A
A1091-7/7
a1091 transistor
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60Ghz
Abstract: TA4020FT
Text: TA4020FT TOSHIBA Linear Integrated Circuit Silicon-Germanium Monolithic TA4020FT ○ UHF LOW NOISE AMPLIFIER APPLICATION Unit: mm 1.2±0.05 ・Thin Extreme Super mini Quad Package 4pin :TESQ 0.9±0.05 High Gain: • Lead free article |S21e| =15.0dB (@ f=1.5GHz)
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TA4020FT
60Ghz
TA4020FT
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Untitled
Abstract: No abstract text available
Text: SIEMENS BFP 196W NPN Silicon RF Transistor • For low noise, low distortion broadband amplifiers in antenna and telecommunications systems up to 1.5GHz at collector currents from 20mA to 80mA • Power amplifier for DECT and PCN systems • f j = 7.5GHz F = 1.5 dB at 900MHz
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900MHz
BFP196W
OT-343
Q62702-F1576
900MHz
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2SC5490
Abstract: ic 7415 an
Text: Ordering number:ENN6289 NPN Epitaxial Planar Silicon Transistor 2SC5490 UHF to S Band Low-Noise Amplifier Applications Package Dimensions unit:mm 2159 [2SC5490] 0.3 1.4 0.25 0.1 1 0.45 1.4 3 0.8 • Low noise : NF=0.9dB typ f=1GHz . : NF=1.4dB typ (f=1.5GHz).
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ENN6289
2SC5490
2SC5490]
S21e2
11GHz
2SC5490
ic 7415 an
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2SC5490
Abstract: ENN6289 TA 8644
Text: Ordering number:ENN6289 NPN Epitaxial Planar Silicon Transistor 2SC5490 UHF to S Band Low-Noise Amplifier Applications Features Package Dimensions • Low noise : NF=0.9dB typ f=1GHz . : NF=1.4dB typ (f=1.5GHz). · High gain : ⏐S21e⏐2=10dB typ (f=1.5GHz).
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ENN6289
2SC5490
S21e2
11GHz
2SC5490]
2SC5490
ENN6289
TA 8644
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st zo 607
Abstract: ZO 607 MA ZO 607 MA 135 zo 607 transistor zo 607 0124 Z0 607 MN ZO 607 transistor 2SC5275 B/B/CQ 643
Text: Ordering number: EN5185 2SC5275 NPN Epitaxial Planar Silicon Transistor UHF to S Band Low-Noise Amp, OSC Applications Features • Low noise : NF=0.9dB typ f = 1GHz . : NF = 1.4dB typ (f= 1.5GHz). • High gain: I S21e I 2= lOdB typ (f= 1.5GHz). • High cutoff frequency : fp = 11GHz typ.
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EN5185
2SC5275
10dBtyp
st zo 607
ZO 607 MA
ZO 607 MA 135
zo 607
transistor zo 607
0124
Z0 607 MN
ZO 607 transistor
B/B/CQ 643
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transistor cq 529
Abstract: 2SC5245 51842 CQ 734 G TRANSISTOR cq 802
Text: Ordering number:EN 5184A SAMO N0.5184A i 2SC5245 NPN Epitaxial Planar Silicon Transistor UHF to S-Band Low-Noise Amp, OSC Applications Features • Low noise : NF=0.9dB typ f= 1GHz . : NF = 1.4dB typ (f = 1.5GHz). • High gain : I S21e I 2= lOdB typ (f= 1.5GHz).
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2SC5245
transistor cq 529
51842
CQ 734 G
TRANSISTOR cq 802
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