Untitled
Abstract: No abstract text available
Text: MOSFET MetalOxideSemiconductorFieldEffectTransistor CoolMOS C7 650VCoolMOS™C7PowerTransistor IPL65R070C7 DataSheet Rev.2.0 Final PowerManagement&Multimarket 650VCoolMOS™C7PowerTransistor IPL65R070C7 1Description ThinPAK8x8
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IPL65R070C7
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mu3020
Abstract: smd transistor k2 k1145
Text: Philips Semiconductors Product specification Logic level TOPFET SMD version of BUK104-50L/S DESCRIPTION Monolithic temperature and overload protected logic level power MOSFET in a 5 pin surface mounting plastic envelope, intended as a general purpose switch for
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OCR Scan
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BUK104-50L/S
BUK114-50L/S
BUK114-50L
BUK114-50S
14-50US
Ipt/lps25
mu3020
smd transistor k2
k1145
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1ps25
Abstract: BUK114-50L BUK114-50S transistor kA2 smd smd transistor ka2
Text: Product specification Philips Semiconductors Logic level TOPFET SMD version of BUK104-50L/S DESCRIPTION Monolithic temperature and overload protected logic level power MOSFET in a 5 pin surface mounting plastic envelope, intended as a general purpose switch for
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OCR Scan
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BUK104-50L/S
BUK114-50L/S
OT426
1ps25
BUK114-50L
BUK114-50S
transistor kA2 smd
smd transistor ka2
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Untitled
Abstract: No abstract text available
Text: MOSFET MetalOxideSemiconductorFieldEffectTransistor CoolMOS P6 600VCoolMOS™P6PowerTransistor IPL60R255P6 DataSheet Rev.2.0 Final PowerManagement&Multimarket 600VCoolMOS™P6PowerTransistor IPL60R255P6 1Description ThinPAK8x8
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IPL60R255P6
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65C7065
Abstract: No abstract text available
Text: MOSFET MetalOxideSemiconductorFieldEffectTransistor CoolMOS C7 650VCoolMOS™C7PowerTransistor IPP65R065C7 DataSheet Rev.2.0 Final PowerManagement&Multimarket 650VCoolMOS™C7PowerTransistor IPP65R065C7 1Description TO-220 tab
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IPP65R065C7
O-220
65C7065
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Untitled
Abstract: No abstract text available
Text: MOSFET MetalOxideSemiconductorFieldEffectTransistor CoolMOS C7 650VCoolMOS™C7PowerTransistor IPW65R065C7 DataSheet Rev.2.0 Final PowerManagement&Multimarket 650VCoolMOS™C7PowerTransistor IPW65R065C7 1Description TO-247
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IPW65R065C7
O-247
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Untitled
Abstract: No abstract text available
Text: MOSFET MetalOxideSemiconductorFieldEffectTransistor CoolMOS P6 600VCoolMOS™P6PowerTransistor IPW60R230P6 DataSheet Rev.2.0 Final PowerManagement&Multimarket 600VCoolMOS™P6PowerTransistor IPW60R230P6 1Description TO-247
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IPW60R230P6
O-247
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Untitled
Abstract: No abstract text available
Text: MOSFET MetalOxideSemiconductorFieldEffectTransistor CoolMOS C7 650VCoolMOS™C7PowerTransistor IPA65R065C7 DataSheet Rev.2.0 Final PowerManagement&Multimarket 650VCoolMOS™C7PowerTransistor IPA65R065C7 1Description TO-220FP
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IPA65R065C7
O-220
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Untitled
Abstract: No abstract text available
Text: MOSFET MetalOxideSemiconductorFieldEffectTransistor CoolMOS C7 650VCoolMOS™C7PowerTransistor IPZ65R065C7 DataSheet Rev.2.1 Final PowerManagement&Multimarket 650VCoolMOS™C7PowerTransistor IPZ65R065C7 1Description PG-TO247-4
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IPZ65R065C7
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ipb65r065c7
Abstract: No abstract text available
Text: MOSFET MetalOxideSemiconductorFieldEffectTransistor CoolMOS C7 650VCoolMOS™C7PowerTransistor IPB65R065C7 DataSheet Rev.2.0 Final PowerManagement&Multimarket 650VCoolMOS™C7PowerTransistor IPB65R065C7 1Description D²PAK
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IPB65R065C7
ipb65r065c7
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TRANSISTOR SMD MARKING CODE RG
Abstract: TRANSISTOR SMD CODE 6.8 BUK9
Text: Philips Semiconductors Product specification TrenchMOS transistor Logic level FET GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope suitable for surface mounting. Using ’trench’ technology
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BUK9614-55
OT404
BUK9614-55
/\\Roarer\root\data13\imaging\BITTING\cpl
mismatch\20000819\081.
\BUK9614-55
TRANSISTOR SMD MARKING CODE RG
TRANSISTOR SMD CODE 6.8
BUK9
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SPP70N10L
Abstract: SPB70N10L
Text: SPB70N10L SPP70N10L Preliminary data SIPMOS Power Transistor • N-Channel • Enhancement mode • Avalanche rated • Logic Level • dv/dt rated • 175°C operating temperature Type VDS ID SPB70N10L 100 V 70 A SPP70N10L RDS on @ VGS Pin 1 Pin 2 Pin 3
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SPB70N10L
SPP70N10L
P-TO263-3-2
Q67040-S4170
P-TO220-3-1
Q67040-S4175
SPP70N10L
SPB70N10L
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s4142
Abstract: transistor smd MJ 145 P-TO251-3-1 P-TO252 SPD28N03L SPU28N03L
Text: SPD28N03L SPU28N03L Preliminary data SIPMOS Power Transistor • N-Channel • Enhancement mode • Avalanche rated • Logic Level • dv/dt rated • 175°C operating temperature Type VDS ID SPD28N03L 30 V 28 A SPU28N03L RDS on @ VGS Pin 1 Pin 2 Pin 3
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SPD28N03L
SPU28N03L
P-TO252
Q67040-S4139-A2
P-TO251-3-1
Q67040-S4142-A2
s4142
transistor smd MJ 145
P-TO252
SPD28N03L
SPU28N03L
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SPB80N03L
Abstract: spp60n
Text: SIEMENS SPP80N03L SPB80N03L Preliminary data SIPMOS Power Transistor • N-Channel • Enhancement mode • Avalanche rated • Logic Level • dv/df rated • 175°C operating temperature Type SPP80N03L Vbs 30 V h 80 A SPB80N03L f l DS on @ VGS 0.008 Q
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SPP80N03L
SPB80N03L
SPB80N03L
P-T0220-3-1
P-T0263-3-2
Q67040-S4735-A2
Q67040-S4735-A3
spp60n
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Siemens DIODE E 1220
Abstract: SPB30N03L SPP30N03L
Text: SPP30N03L SPB30N03L Preliminary data SIPMOS Power Transistor • N-Channel • Enhancement mode • Avalanche rated • Logic Level • dv/dt rated • 175°C operating temperature Type VDS ID SPP30N03L 30 V 30 A SPB30N03L RDS on @ VGS 0.028 Ω VGS = 4.5 V
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SPP30N03L
SPB30N03L
P-TO220-3-1
Q67040-S4143-A2
P-TO263-3-2
Q67040-S4737-A3
Siemens DIODE E 1220
SPB30N03L
SPP30N03L
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smps circuit diagram of 300W
Abstract: layout 48 VOLT 150 AMP smps 48 VOLT 10 AMP smps 07n60 mosfet circuit diagrams AN-CoolMOS-04 ZVT Full bridge transformer IGBT 07N60 H-bridge 24 VOLT 80 AMP smps infineon cool MOSFET dynamic characteristic test 500 Watt Phase Shifted ZVT Power Converter
Text: Application Note, V1.0, Apr. 2001 CoolMOS TM AN-CoolMOS-04 Introduction to Avalanche Considerations for CoolMOS TM in SMPS Applications Power Management & Supply N e v e r s t o p t h i n k i n g . Introduction to Avalanche Considerations for CoolMOSTM in SMPS Applications
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AN-CoolMOS-04
2002-Sep.
smps circuit diagram of 300W
layout 48 VOLT 150 AMP smps
48 VOLT 10 AMP smps
07n60 mosfet circuit diagrams
AN-CoolMOS-04
ZVT Full bridge transformer IGBT
07N60
H-bridge 24 VOLT 80 AMP smps
infineon cool MOSFET dynamic characteristic test
500 Watt Phase Shifted ZVT Power Converter
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Untitled
Abstract: No abstract text available
Text: SPD28N03 SPU28N03 SIEMENS SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche rated • övlöt rated • 175°C operating temperature Type ^DS SPD28N03 30 V b 28 A Pin 1 Pin 2 Pin 3 G D S Package f f DS on (à) VGS 0.023 Q, ^GS = 10 V P-T0252
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SPD28N03
SPU28N03
Q67040-S4138-A2
P-T0252
P-T0251
Q67040-S4140-A2
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Siemens DIODE E 1220
Abstract: VPT09050
Text: SPD28N03L SPU28N03L SIEMENS SIPMOS Power Transistor • N-Channel /X • Enhancement mode • Avalanche rated VPT09050 VPT09051 • Logic Level • dvld t rated • 175°C operating temperature Type ^DS b SPD28N03L 30 V 28 A SPU28N03L ffDS on (5) VGS
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SPD28N03L
SPU28N03L
VPT09050
VPT09051
P-T0252
Q67040-S4139-A2
P-T0251
Q67040-S4142-A2
Siemens DIODE E 1220
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28n03l
Abstract: 28n03 P-TO251-3-1 P-TO252 SPD28N03L SPU28N03L Q67040-S4142-A2 a6024
Text: SPD 28N03L SIPMOS Power Transistor Features Product Summary • N channel Drain source voltage VDS • Drain-Source on-state resistance RDS on 0.018 Ω Continuous drain current ID Enhancement mode • Avalanche rated 30 V 30 A • Logic Level • dv/dt rated
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28N03L
SPD28N03L
P-TO252
Q67040-S4139-A2
SPU28N03L
P-TO251-3-1
Q67040-S4142-A2
28n03l
28n03
P-TO252
SPD28N03L
SPU28N03L
a6024
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PDF
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30N03L
Abstract: 30N03 SPB30N03L SPP30N03L
Text: SPP 30N03L SIPMOS Power Transistor Features Product Summary • N channel Drain source voltage VDS • Drain-Source on-state resistance RDS on 0.018 Ω Continuous drain current ID Enhancement mode • Avalanche rated 30 V 30 A • Logic Level • dv/dt rated
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30N03L
SPP30N03L
P-TO220-3-1
Q67040-S4737-A2
SPB30N03L
P-TO263-3-2
Q67040-S4143-A3
30N03L
30N03
SPB30N03L
SPP30N03L
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70N10L
Abstract: SPB70N10L SPP70N10L 160-240V SPP70
Text: Preliminary Data SPP 70N10L SIPMOS Power Transistor Features Product Summary • N channel Drain source voltage VDS • Drain-Source on-state resistance RDS on 0.016 Ω Continuous drain current ID Enhancement mode • Avalanche rated 100 V 70 A • Logic Level
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70N10L
SPP70N10L
P-TO220-3-1
Q67040-S4175
SPB70N10L
P-TO263-3-2
Q67040-S4170
70N10L
SPB70N10L
SPP70N10L
160-240V
SPP70
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80N03L
Abstract: SPP80N03L Q67040-S4735-A3 80n03 SPB80N03L
Text: SPP 80N03L SIPMOS Power Transistor Features Product Summary • N channel Drain source voltage VDS • Drain-Source on-state resistance RDS on 0.006 Ω Continuous drain current ID Enhancement mode • Avalanche rated 30 V 80 A • Logic Level • dv/dt rated
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80N03L
SPP80N03L
P-TO220-3-1
Q67040-S4735-A2
SPB80N03L
P-TO263-3-2
Q67040-S4735-A3
80N03L
SPP80N03L
80n03
SPB80N03L
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PDF
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Siemens DIODE E 1220
Abstract: No abstract text available
Text: SIEMENS SPP30N03L SPB30N03L Preliminary data SIPMOS Power Transistor • N-Channel • Enhancement mode • Avalanche rated • Logic Level • dv/dt rated • 175°C operating temperature Type SPP30N03L Vds 30 V b 30 A SPB30N03L ffDS on @ VGS 0.028 O V/gs = 4.5V
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OCR Scan
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SPP30N03L
SPB30N03L
SPB30N03L
P-T0220-3-1
P-T0263-3-2
Q67040-S4143-A2
Q67040-S4737-A3
Siemens DIODE E 1220
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PDF
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28N03
Abstract: s4140
Text: SPD 28N03 SIPMOS Power Transistor Features Product Summary • N channel Drain source voltage VDS • Drain-Source on-state resistance RDS on 0.023 Ω Continuous drain current ID Enhancement mode • Avalanche rated 30 V 28 A • dv/dt rated • 175˚C operating temperature
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Original
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28N03
SPD28N03
P-TO252
Q67040-S4138
SPU28N03
P-TO251-3-1
Q67040-S4140-A2
28N03
s4140
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