VR1G
Abstract: No abstract text available
Text: TVR1B,TVR1G,TVR1J TOSHIBA Fast Recovery Diode Silicon Diffused Type TVR1B,TVR1G,TVR1J TV Applications fast recovery Unit: mm • Average Forward Current: IF (AV) = 0.5 A (Ta = 65°C) • Repetitive Peak Reverse Voltage: VRRM = 100, 400, 600 V • Reverse Recovery Time: trr = 2.0 µs
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vr1g
Abstract: No abstract text available
Text: TVR1B,TVR1G,TVR1J TOSHIBA Fast Recovery Diode Silicon Diffused Type TVR1B, TVR1G, TVR1J TV Applications fast recovery Unit: mm • Average Forward Current: IF (AV) = 0.5 A (Ta = 65°C) • Repetitive Peak Reverse Voltage: VRRM = 100, 400, 600 V • Reverse Recovery Time: trr = 2.0 µs
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Untitled
Abstract: No abstract text available
Text: SIYU R TVR1B / TVR1D / TVR1G / TVR1J 塑封快恢复整流二极管 Plastic Fast Recover Rectifier Reverse Voltage 100 to 600V Forward Current 0.5A 反向电压 100 - 600 V 正向电流 0.5 A 特征 Features DO-41 •低的反向漏电流 Low reverse leakage
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DO-41
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Untitled
Abstract: No abstract text available
Text: SIYU R TVR1B / TVR1D / TVR1G / TVR1J 塑封快恢复整流二极管 Plastic Fast Recover Rectifier Reverse Voltage 100 to 600V Forward Current 0.5A 反向电压 100 - 600 V 正向电流 0.5 A 特征 Features DO-41 ・低的反向漏电流 Low reverse leakage
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DO-41
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Untitled
Abstract: No abstract text available
Text: TH09/2479 TH97/2478 www.eicsemi.com TVR1B/G/J IATF 0113686 SGS TH07/1033 FAST RECOVERY RECTIFIER DIODES PRV : 100 - 600 Volts Io : 0.5 Ampere DO - 41 FEATURES : * * * * * * * High current capability High surge current capability High reliability Low reverse current
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TH09/2479
TH97/2478
TH07/1033
DO-41
UL94V-O
MIL-STD-202,
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Untitled
Abstract: No abstract text available
Text: TVR1B/G/J FAST RECOVERY RECTIFIER DIODES PRV : 100 - 600 Volts Io : 0.5 Ampere DO - 41 FEATURES : * * * * * * High current capability High surge current capability High reliability Low reverse current Low forward voltage drop Fast switching for high efficiency
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DO-41
UL94V-O
MIL-STD-202,
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TVR1D
Abstract: No abstract text available
Text: SIYU R TVR1B . TVR1J Fast Recovery Rectifier Reverse Voltage 100 to 600 V Forward Current 0.5 A DO-41 Features 1.0 25.4 MIN .034(0.9) DIA .028(0.7) . Low reverse leakage . High forward surge capability . High temperature soldering guaranteed: .205(5.2)
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DO-41
TVR1D
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vr1g
Abstract: No abstract text available
Text: TVR1B,TVR1G,TVR1J TOSHIBA Fast Recovery Diode Silicon Diffused Type TVR1B,TVR1G,TVR1J TV Applications fast recovery Unit: mm • Average Forward Current: IF (AV) = 0.5 A (Ta = 65°C) • Repetitive Peak Reverse Voltage: VRRM = 100, 400, 600 V • Reverse Recovery Time: trr = 2.0 s
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vr1g
Abstract: VR1B DIODE VR1J toshiba last digit of year
Text: TVR1B,TVR1G,TVR1J TOSHIBA Fast Recovery Diode Silicon Diffused Type TVR1B,TVR1G,TVR1J TV Applications fast recovery Unit: mm • Average Forward Current: IF (AV) = 0.5 A (Ta = 65°C) · Repetitive Peak Reverse Voltage: VRRM = 100, 400, 600 V · Reverse Recovery Time: trr = 2.0 µs
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vr1g
Abstract: No abstract text available
Text: TVR1B,TVR1G,TVR1J TOSHIBA Fast Recovery Diode Silicon Diffused Type TVR1B,TVR1G,TVR1J TV Applications fast recovery Unit: mm • Average Forward Current: IF (AV) = 0.5 A (Ta = 65°C) • Repetitive Peak Reverse Voltage: VRRM = 100, 400, 600 V • Reverse Recovery Time: trr = 2.0 s
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vr1g
Abstract: Diode VR1B VR1B VR1J 1J TOSHIBA
Text: TVR1B,TVR1G,TVR1J TOSHIBA Fast Recovery Diode Silicon Diffused Type TVR1B,TVR1G,TVR1J TV Applications fast recovery Unit: mm • Average Forward Current: IF (AV) = 0.5 A (Ta = 65°C) • Repetitive Peak Reverse Voltage: VRRM = 100, 400, 600 V • Reverse Recovery Time: trr = 2.0 µs
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Untitled
Abstract: No abstract text available
Text: BL GALAXY ELECTRICAL TVR1B - TVR1J VOLTAGE RANGE: 100- 600 V CURRENT: 0.5 A HIGH EFFICIENCY RECT IFIER FEATURES DO - 41 Low cos t Diffus ed junction Low leakage Low forward voltage drop High current capability Eas ily cleaned with freon, alcohol, ls opropanol
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DO-41,
MIL-STD-202
34gram
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TVR1B
Abstract: TVR1D
Text: SIYU R TVR1B / TVR1D / TVR1G / TVR1J 塑封快恢复整流二极管 Plastic Fast Recover Rectifier Reverse Voltage 100 to 600V Forward Current 0.5A 反向电压 100 - 600 V 正向电流 0.5 A 特征 Features DO-41 1.0 25.4 MIN •反向漏电流低 .034(0.9)
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DO-41
TVR1B
TVR1D
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Untitled
Abstract: No abstract text available
Text: TVR1B-TVR1J High Efficiency Rectifiers VOLTAGE RANGE: 100- 600 V CURRENT: 0.5 A Features DO - 41 Low cos t Diffus ed junction Low leakage Low forward voltage drop High current capability Eas ily cleaned with freon, alcohol, ls opropanol and s im ilar s olvents
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DO-41,
34gram
ave60H
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TVR1
Abstract: No abstract text available
Text: TVR1B/G/J FAST RECOVERY RECTIFIER DIODES PRV : 100 - 600 Volts Io : 0.5 Ampere DO - 41 FEATURES : * * * * * * * High current capability High surge current capability High reliability Low reverse current Low forward voltage drop Fast switching for high efficiency
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DO-41
UL94V-O
MIL-STD-202,
TVR1
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TVR1B
Abstract: toshiba diode "do-41"
Text: SILICON DIFFUSED TYPE FAST RECOVERY DIODE - O • • • TVR1B/G/J TV APPLICATIONS. FAST RECOVERY U n it in mm Average Forward Current : I f (AV) =0.5A (Ta = 65°C) Repetitive Peak Reverse Voltage : Vr r m = 100V~600V Reverse Recovery Time : tr r =2.0^s
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OCR Scan
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DO-41
100mA,
100mA
TVR1B
toshiba diode "do-41"
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Untitled
Abstract: No abstract text available
Text: T O SH IB A TVR1 B,TVR1G,TVR1 J TOSHIBA FAST RECOVERY DIODE SILICON DIFFUSED TYPE TVR1B, TVR1G, TVR1J Unit in mm TV APPLICATIONS FAST RECOVERY • • • Average Forward Current : I f ( A V ) =0.5A (Ta = 65°C) Repetitive Peak Reverse Voltage : V t?:rm = 100V~600V
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OCR Scan
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vr1g
Abstract: Diode VR1B DIODE VR1J VR1B VR1J
Text: TO SH IBA TVR1B,TVR1G,TVR1J TOSHIBA FAST RECOVERY DIODE SILICON DIFFUSED TYPE TVR1B, TVR1G, TVR1J Unit in mm TV APPLICATIONS FAST RECOVERY • • • Average Forward Current Repetitive Peak Reverse Voltage Reverse Recovery Time (AV) = 0.5 A (Ta = 65°C)
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OCR Scan
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000707EAA2'
vr1g
Diode VR1B
DIODE VR1J
VR1B
VR1J
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VR1G
Abstract: Diode VR1B
Text: TOSHIBA TVR1B,TVR1G,TVR1J TOSHIBA FAST RECOVERY DIODE SILICON DIFFUSED TYPE TVR1B, TVR1G, TVR1J Unit in mm TV APPLICATIONS FAST RECOVERY • • • Average Forward Current Repetitive Peak Reverse Voltage Reverse Recovery Time (AV) = 0.5 A (Ta = 65°C) V r r M = 100 V - 600 V
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OCR Scan
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DO-41
VR1G
Diode VR1B
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DIODE 39c
Abstract: 1S2777 TVRIG 1S2775 1S2776 251C diode 1BA TVR1D 125X3
Text: 9097250 TOSHIBA FAST RECOVERY DIODE TVR1J 600V 39C 02238 <D IS C R E T E / O P T O In dF I t DT V S S O 0 0 0 2 2 3 Û 7 U n it in 0 .5 A M AXIMUM RATINGS C H A R A C T E R IS T IC TVR1B TVR1D R epetitive Peak R everse Voltage TVR1G TVR1J Average F orw ard C urrent
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DO-15
125X3
100ns
DIODE 39c
1S2777
TVRIG
1S2775
1S2776
251C
diode 1BA
TVR1D
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SR400FV-70
Abstract: SR400FV-80 SRH25C SWH-10 SWH2-16 SWH2-25ED SWHD2-16 SWHD2-20
Text: - M m s SR400FH-60 SR400FV-70 SR400FV—80 SRH25C SWH2-16 SWH2-20 SWH2-25ED SffH-08 SWH-10 SWHD2-16 SWHD2-20 SWHD2-25 S*HD3-16 SWHD3-20 T51A T51B T51C T52A T52B T52C TD-13 TD-15 TD-15H TFR1L TFR1N TFR1Q TFR1T TFR2L TFR2N TFR2Q TFR2T TFR4L TFR4N TFR4Q TFR4T
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SR400FK-60
SR400FV-70
SR400FV-80
SRH25C
SWH2-16
SWH2-25ED
SKH-08
HI539
EI540
E1542
SR400FV-80
SRH25C
SWH-10
SWH2-16
SWH2-25ED
SWHD2-16
SWHD2-20
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toshiba diode "do-41"
Abstract: tvr1 TVR1B
Text: TO SH IB A TVR1 B,TVR1 G,TVR1 J TOSHIBA FAST RECOVERY DIODE SILICON DIFFUSED TYPE T V R 1 Rmmr g TX /R lfi g Tm V R 1 I m • w ■ « ■ w ■ m ■ w ■ « ■ v Unit in mm TV APPLICATIONS FAST RECOVERY • Average Forward Current !f (AV) =0-5A (Ta = 65°C)
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OCR Scan
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961001EAA2'
toshiba diode "do-41"
tvr1
TVR1B
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1ZB36
Abstract: 2z47 1J4B41 1B4B42 100L6P43 1Z16 6G4B41 3Z150 30L6P45 10GL2CZ
Text: 1 PART NUMBER INDEX P art No. 05B4B48 05G4B48 05GU4B48 05J4B48 05NH45 05NH46 05NU41 05NU42 0R8GU41 100G6P43 100L6P43 100Q6P43 100U6P43 10B4B41 10DL2C41A 10DL2C48A 10DL2CZ47A 10FL2C48A 10FL2CZ47A 10G4B41 10GL2CZ47A 10GWJ2C48C 10GWJ2CZ47C 10J4B41 10JL2CZ47 10JWJ2CZ47
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15J4B42
160G2G43
160L2G43
160Q2G43
160U2G43
160DL2C41A
16FL2C41A
16DL2CZ47A
16FL2CZ47A
1B4B41
1ZB36
2z47
1J4B41
1B4B42
100L6P43
1Z16
6G4B41
3Z150
30L6P45
10GL2CZ
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6B4B41
Abstract: 1J4B41 1B4B41 6J4B41 6G4B41 1G4B41 4b4b41 4G4B41 10G4B41 15B4B42
Text: Rectifiers Average Forward Current «- General Purpose Rectifiers High-Speed Rectifiers -> Peak Repetitive Reverse Voltage Average Forward Current <- \ A \ Package trr 100V 400V 600V C2.F2 1000V 1500V 0.2A DO-41 S 1.5 ms TFR3N TRF3T 0.3A DO-41 SS 4 ms TFR4N
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DO-41
DO-15
D041SS
6B4B41
1J4B41
1B4B41
6J4B41
6G4B41
1G4B41
4b4b41
4G4B41
10G4B41
15B4B42
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