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    82V2108PXG Renesas Electronics Corporation 3.3V T1/E1/J1 OCTAL FRAMER Visit Renesas Electronics Corporation
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    Rochester Electronics LLC MV2108

    DIODE VAR CAP SINGLE 30V 27PF 2-
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    Renesas Electronics Corporation 82V2108PX

    IC TELECOM INTERFACE 128QFP
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    Renesas Electronics Corporation 82V2108BBG

    IC TELECOM INTERFACE 144BGA
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    Siemens 6AV21080AA080AA7

    ENERGY SUITE TRIAL V18
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    Siemens 6AV21080CH000BH0

    ENERGY SUITE S7-1500. 1X10 ENO D
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    V2108 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    v2308

    Abstract: EP1014 V2205
    Text: TABLE OF CONTENTS GLASS PACKAGED HERMETICALLY SEALED Suffix Letter Indicates Capacitance Tolerance SLIGHT HYPERABRUPT AB R U PT Page No. 1 N 9 5 1 - 1 N 9 5 6 . 1N4786 -1 N 4 8 1 5 A , B .


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    PDF 1N4786 1N5139 1485A 1N5441A 1N5461A 1N5461 1N5710A V1652 V1720 SQ131 v2308 EP1014 V2205

    FMMV105G

    Abstract: fmmv2109 ZC2800 ZC2811 ZC5800 ZC820 ZC821 ZC822 ZC823 ZC824
    Text: E-LINE DIODE SPECIFICATIONS SCH O TTK Y BARRIER DIO DES These devices have a high breakdown voltage and ultra fast switching capabilities. R.F. applications include low noise mixers, large and small signal detectors, limiters and discriminators. Applications


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    PDF 10/iA ZC2800 ZC2811 ZC5800 ZC2800-ZC5800 ZC2811 OT-23 ZC2800E rZC2810E ZC2811E FMMV105G fmmv2109 ZC820 ZC821 ZC822 ZC823 ZC824

    EATON CM20A

    Abstract: A5 GNE mosfet Hall sensor 44e 402 2N8491 FTG 1087 S TRIAC BCR 10km FEB3T smd transistor marking 352a sharp EIA 577 sharp color tv schematic diagram MP-130 M mh-ce 10268
    Text: Table of Contents N E W A R K E L E C T R O N IC S “Where serving you begins even before you call” Newark Electronics is a UNIQUE broadline distributor of electronic components, dedicated to provid­ ing complete service, fast delivery and in-depth inventory. Our main


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    V2101

    Abstract: diode mv2105 SOT23 package diodes MV2105* equivalent
    Text: MOTOROLA Order this document by MMBV2101LT1/D SEMICONDUCTOR TECHNICAL DATA Silicon Tuning Diodes These devices are designed in the popular PLASTIC PACKAGE for high volume requirements of FM Radio and TV tuning and AFC, general frequency control and tuning applications.They provide solid-state reliability in replacement of mechanical


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    PDF MMBV2101LT1/D OT-23 MMBV2101LT1 MMBV2103LT1 MMBV2105LT1 MMBV2107LT1 MMBV2108LT1 MMBV2109LT1 MV2101 V2104 V2101 diode mv2105 SOT23 package diodes MV2105* equivalent

    V2103

    Abstract: V2109 V2105
    Text: PLESSEY SEP1IC0ND/DISCRETE ~ 03 ÔF§7BB 0S3 3 OOObSTT 4 T -o 7 ~ t? Silicon variable capacitance F M M V 2 1 0 1 -F M M V 2 1 0 9 A B S O L U T E M A X IM U M R A T IN G S Value Unit Parameter Sym bol Reverse voltage Vr 30 V Forward current If 20 mA C H A R A C T E R IS T IC S at Tamb = 25°C .


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    PDF V2102 V2103 V2104 V2105 V2106 V2108 V2109

    powec rm 1110

    Abstract: rm 1100 powec MPC1000 transistors JX 6822 A inverter welder 4 schematic SAA 14Z transistor SI 6822 stg 8810 PL 15Z DIODE germanium transistor
    Text: TH€ SEMICONDUCTOR DATA LIBRARY SERIES A VOLUME HI prepared by Technical Inform ation Center The in fo rm a tio n in this book has been ca re fu lly checked and is believed to be reliable; however, no re sp o n sib ility is assumed fo r inaccuracies. F u rthe rm o re, this in fo rm a tio n does no t convey to the purchaser o f sem iconductor


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    PDF 111ii MZ5558 Z5555, Z5556, MZ5557 powec rm 1110 rm 1100 powec MPC1000 transistors JX 6822 A inverter welder 4 schematic SAA 14Z transistor SI 6822 stg 8810 PL 15Z DIODE germanium transistor

    1N5438

    Abstract: tfc 5630 2N5161 germanium 2N4193 1N1319 A2023 transistor 2N217 1N5159 transistor bf 175
    Text: The Semiconductor DataBook This is the first supplement to the 4th Edition o f the Semiconductor Data Book originally published in July 1969. It is produced to keep an up-to-date listing o f the most advanced semiconductor products. Devices characterized in this supplement include only the type numbers introduced after the publi­


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    PDF 27TfC 1N5438 tfc 5630 2N5161 germanium 2N4193 1N1319 A2023 transistor 2N217 1N5159 transistor bf 175

    transistors BC 557C

    Abstract: BF366 SMD code 307C F199 transistor 2N5793 BC413 motorola ZENER diode marking code z7 equivalent of transistor bc212 bc 214 bc107c motorola 2n555
    Text: S e le c to r G u id e s 1 M e ta l-C a n T ra n s is to rs 3 F ie ld -E ffe c t T ra n s is to rs 4 S m a ll-S ig n a l T u n in g , S w itc h in g and Z e n e r D io d e s 5 T a p e a n d R eel S p e c ific a tio n s P a ck ag e O u tlin e D im e n s io n s and


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    ZC2800E

    Abstract: BAS70-05 BAS70-06 ZC2810E ZC2811E ZC5800E ZC830A ZC831A ZC832A ZC833A
    Text: SOT-23 TRANSISTORS & DIODES SCH O TTKY BARRIER DIO DES Type V br at Ir -1 0 j A min. (Volts VF at lF-1mA max. (mV) 70 20 15 50 410 410 410 410 ZC2800E ZC2810E ZC2811E ZC5800E max. nA at VR (volts) 200 100 100 200 lF at VF-1V min. (mA) CratvR-0V f—1MHz


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    PDF OT-23 ZC2800E ZC2810E ZC2811E ZC5800E ZC2810E) Ir-10mA BAS70-05 BAS70-06 ZC2800-ZC5800 ZC830A ZC831A ZC832A ZC833A

    Untitled

    Abstract: No abstract text available
    Text: FMMV2101 to FMMV2109 SOT23 SILICON PLANAR VARIABLE CAPACITANCE DIODE PIN CONFIGURATION PARTMARKING DETAIL: FMMV2101 - 6R FMMV2102 - 6F FMMV2103 - 6G FMMV2104 - 6H FMMV2105 - 6J FMMV2106 - 6K FMMV2107 - 6L V2108 - 6M FMMV2109 - 6N 1 1 T ABSOLUTE MAXIMUM RATINGS


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    PDF FMMV2101 FMMV2109 FMMV2101 FMMV2102 FMMV2103 FMMV2104 FMMV2105 FMMV2106 FMMV2107 FMMV2108

    varactor 36z

    Abstract: germanium halbleiter index transistor Halbleiter Buch 2n5347 2n3054 working of reactance modulator JE2955 germanium transistor 2N3902
    Text: TH€ SEMICONDUCTOR DATA LIBRARY FIRST EDITION prepared by Technical Information Center T h e in fo rm a tio n in th is bo o k has been c a re fu lly checked and is believed to be re lia b le ; ho w ever, no re s p o n s ib ility is assumed fo r inaccuracies. F u rth e rm o re , th is in fo rm a tio n does n o t convey to the purchaser o f s e m ic o n d u c to r


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    PDF Z1000 MZ4614 MZ4627 1N4099 M4L3052 M4L3056 1N5158 varactor 36z germanium halbleiter index transistor Halbleiter Buch 2n5347 2n3054 working of reactance modulator JE2955 germanium transistor 2N3902

    v2308

    Abstract: V23083 v2303 V2307 sq201 MV2201 EP1014 V2306 V2107 V2209
    Text: TA B L E OF C O N TE N TS GLASS PACKAGED HERMETICALLY SEALED Suffix Letter Indicates Capacitance Tolerance S LIG H T HYPERABRUPT Page No. ABRUPT H A 1 9 1 5 A - H A 1 9 5 0 A , B, C 1N951 - 1 N 9 5 6 . 1N 4786- 1N 4815A , B . . . 1N 5 1 3 9 - 1 N 5 1 4 8 5 A , B . .


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    PDF 1N951 PC107 SQ181 V2203 V2205 V2209 V2303 V2304 V2305 V2306 v2308 V23083 V2307 sq201 MV2201 EP1014 V2107

    MMBV2107LT1

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Silicon Tuning Diodes These devices are designed in the popular PLASTIC PACKAGE for high volume requirements of FM Radio and TV tuning and AFC, general frequency control and tuning applications.They provide solid-state reliability in replacement of mechanical


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    PDF MMBV2101LT1 MMBV2103LT1 MMBV2105LT1 MMBV2107LT1 MMBV2108LT1 MMBV2109LT1 MV2101 V2104 V2105 V2108

    transistor c2060

    Abstract: Transistor Shortform Datasheet & Cross References 1N4465 C1906 transistor Germanium itt 3N58 IN939 MC1230F 2N3866 MOTOROLA C943 transistor
    Text: Data Book Updating Service I Table of Contents How to Use the Data Book I > INTRODUCTION Complete I N . . . INDEX numerical index o f all ElA-registered device types, with major electrical specifications 2N . . . & 3N . . . INDEX Complete numerical index of all ElA-registered device types,


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    PDF AN-134 transistor c2060 Transistor Shortform Datasheet & Cross References 1N4465 C1906 transistor Germanium itt 3N58 IN939 MC1230F 2N3866 MOTOROLA C943 transistor

    MV2201

    Abstract: V2103 V2209
    Text: K n o x S e m ic o n d u c t o r , I n c GENERAL PURPOSE ABRUPT VARACTOR DIODES MV2101 - MV2115 MV2201 - MV22I5 TYPE N U M BER CA PACITANCE @ - 4 Vdc 1 M H z pF M IN QUALITY FACTOR Q @ - 4 Vdc f = 50 M H z CA PA C ITA N C E RATIO C*2V / C-30V MIN MV2101


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    PDF MV2101 MV2115 MV2201 MV22I5 V2103 V2105 V2108 V2113 V2209

    MV2107

    Abstract: mbv2109 MV2113
    Text: SILICON EPICAP DIODES . designed in the popular PLASTIC PACKAGE for high volum e require­ ments of FM Radio and TV tuning and AFC, general frequency control and tuning applications; providing solid-state reliability in replacement of mechanical tuning methods.


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    PDF V21XX MMBV21XXLT1 MMBV2101LT1 MMBV2103LT1 MMBV2105LT1 MMBV2107LT1 MMBV2109LT1* 33AS8) MMBV2101LT1, MV2107 mbv2109 MV2113