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    VERY HIGH AREA IR PHOTODIODE Search Results

    VERY HIGH AREA IR PHOTODIODE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    GC321AD7LP103KX18J Murata Manufacturing Co Ltd High Effective Capacitance & High Ripple Current Chip Multilayer Ceramic Capacitors for Automotive Visit Murata Manufacturing Co Ltd
    GC331AD7LQ153KX18J Murata Manufacturing Co Ltd High Effective Capacitance & High Ripple Current Chip Multilayer Ceramic Capacitors for Automotive Visit Murata Manufacturing Co Ltd
    GC331CD7LQ473KX19K Murata Manufacturing Co Ltd High Effective Capacitance & High Ripple Current Chip Multilayer Ceramic Capacitors for Automotive Visit Murata Manufacturing Co Ltd
    GC343DD7LP334KX18K Murata Manufacturing Co Ltd High Effective Capacitance & High Ripple Current Chip Multilayer Ceramic Capacitors for Automotive Visit Murata Manufacturing Co Ltd
    GC355DD7LQ224KX18K Murata Manufacturing Co Ltd High Effective Capacitance & High Ripple Current Chip Multilayer Ceramic Capacitors for Automotive Visit Murata Manufacturing Co Ltd

    VERY HIGH AREA IR PHOTODIODE Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: Product Group: Vishay Optoelectronics, Sensors / December 2014 Author: Andreas Puetz Tel: [email protected] E-mail: +49-7131-67-2662 New VEMD5010X01 and VEMD5110X01 Silicon PIN Photodiodes Deliver 7.5 mm2 Sensitive Area in Low-Profile Packages Product Benefits:


    Original     		VEMD5010X01 VEMD5110X01 AEC-Q101 VEMD5010X01) VEMD5110X01) PDF

    2SC869

    Abstract: No abstract text available
    Text: MITSUBISHI SILICON AVALANCHE PHOTODIODES blE D • lflITS PD1XX5 SERIES ^ 4 ^ 0 2 ^ DDIMTGT 535 MITSUBISHI DISCRETE SC FOR OPTICAL COMMUNICATION AND RADAR SYSTEMS TYPE NAME FEATURES DESCRIPTION • High speed response (pulse rise tim e 750ps) PD1XX5 is a silicon avalanche photodiode (Si-APD)


    OCR Scan     		750ps) 400MHz) 2SC869 2SC869 PDF

    VFIR

    Abstract: PIN photodiode 850nm PIN photodiode chip 850nm photodiode Fiber-optic fiber-optic photodiode for 850nm Fiber-optic PIN photodiode A/W 850nm SD150-14-006 VCSEL die bonding PIN photodiode chip 850nm
    Text: SD150-14-006 16/32Mbps Si PIN Photodiode Chip The SD150-14-006 chip is a silicon pin photodiode that has been specifically developed for the price-sensitive OEM optical communication applications, including IrDA-compatible transceivers, fiber-optic LAN, VCSEL-based IR links, and instrumentation. Designed to be fully depleted at


    Original     		SD150-14-006 16/32Mbps SD150-14-006 16Mbps 32Mbps VFIR PIN photodiode 850nm PIN photodiode chip 850nm photodiode Fiber-optic fiber-optic photodiode for 850nm Fiber-optic PIN photodiode A/W 850nm VCSEL die bonding PIN photodiode chip 850nm PDF

    Vactec 8441b

    Abstract: VTB8441B Ir photodiodes 2B50 ID12 VTB8440B VTB844DB Vactec VTB process photodiodes photodiodes
    Text: 20/07 '00 11:02 01189845425 PACER COMPONENTS V T B8 44 0B , 8441B VTB Process Photodiodes 7'W 7' A P A C K A G E D IM E N S IO N S \r inch mm -ilû (7.B7) .070 (1.7B) .060 (1.52) (f^ 3 ,soï 60) H0M‘ fib MINIMUM .315 (6-00) .305 (7.75) (5.00) NOM. (5-00)


    OCR Scan     		VTB8440B, 8441B in215 2850K 2S50K 80Qnrp Vactec 8441b VTB8441B Ir photodiodes 2B50 ID12 VTB8440B VTB844DB Vactec VTB process photodiodes photodiodes PDF

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS SFH 232 GERMANIUM PIN PHOTODIODE Package Dimensions in Inches mm Anode .570(14.5) .492(12.5) 149(3.8) .138(3.5) -X - •J57(4.0j .149 (3.8) *006 (.15) Max. ~ T 0.189(4.80) 0.179(4.55) 0.100 (2.54), _L .018 (0.45) .220(5.6) .208 (5.3) .086 (2.2) ~079 (2.0) /


    OCR Scan     		33L33L PDF

    Untitled

    Abstract: No abstract text available
    Text: bGE D • ÛEBStiGS DD4h725 24b « S I E G 7 SIEMENS AKTIENGESELLSCHAF SIEMENS SFH 232 GERMANIUM PIN PHOTODIODE Package Dimensions in Inches mm Cathode 570(14 5) 492(12 5) 149 (3 8} 138 (3 5) _ u N»_ 0 100 (2541 1 157 (4 0j .149 (3 8) Max /¡fisi I 0 189(4


    OCR Scan     		DD4h725 004b72b PDF

    Untitled

    Abstract: No abstract text available
    Text: bDE D • flEBSbOS D04b727 DIT « S I E G SIEMENS AKT IENGESELLSCHAF SIEMENS SFH 233 GERMANIUM PIN PHOTODIODE FEATURES Maximum Ratings * Anode Marking: Projection at Package Bottom Operating and Storage Temperature Range T0P, T3Te Reverse Voltage (VR) Power Dissipation (PTO t )


    OCR Scan     		D04b727 1100ction A23SbDS 0G4b72Ã PDF

    APY12

    Abstract: APY 12 Siemens photodiode visible light Germanium power K/HOP-1045
    Text: SFH 231 SIEMENS GERMANIUM PIN PHOTODIODE Package Dimensions in Inches mm FEATURES Maximum Ratings * Anode Marking: Projection at Package Bottom • Usage: Visible Light and Near Infrared Range * High Spectral Sensitivity ■ High Reliability * Very Short Switching Time


    OCR Scan     		1300nm, 100nA) APY12 APY 12 Siemens photodiode visible light Germanium power K/HOP-1045 PDF

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS SFH 233 GERMANIUM PIN PHOTODIODE FEATURES Maximum Ratings • Anode Marking: Projection at Package Bottom Operating and Storage Temperature Range T0P, Ts tg -4 0 “ to +80°C Reverse Voltage (VR) . 10 V


    OCR Scan     		0007fci40 --SFH233 aZ3b32b 0007fc PDF

    near IR sensors with daylight filter

    Abstract: No abstract text available
    Text: Product Group: Vishay Optoelectronics, Sensors / September 2014 Author: Joerg Wedermann Tel: +49 7131 67 3027 E-mail: [email protected] New VEMD6010X01 and VEMD6110X01 Silicon PIN Photodiodes The News: Vishay Intertechnology Automotive-Grade PIN Photodiodes in 1206


    Original     		VEMD6010X01 VEMD6110X01 VEMD6110X01 VEMD6010X01) VEMD6110X01) near IR sensors with daylight filter PDF

    germanium photodiode PIN

    Abstract: pin photodiode 1550 sensitivity photodiode PIN 1300 sensitivity pin Photodiode 1300 nm Germanium power t2856
    Text: SIEMENS SFH 232 GERMANIUM PIN PHOTODIODE FEATURES Maximum Ratings * Anode Marking: Tab at Package Bottom Operating and Storage Temperature Range T0P, Tstg .-40" to +80“C Reverse Voltage (VR) .15V


    OCR Scan     		PDF

    VTB8440B

    Abstract: VTB8440 VTB8441B VTB process photodiodes VTB8441
    Text: VTB Process Photodiodes VTB8440B, 8441B PACKAGE DIMENSIONS inch mm CASE 21F 8 mm CERAMIC CHIP ACTIVE AREA: .008 in2 (5.16 mm2) PRODUCT DESCRIPTION ABSOLUTE MAXIMUM RATINGS Planar silicon photodiode in recessed ceramic package. The package incorporates an infrared


    Original     		VTB8440B, 8441B VTB8440B VTB8440B VTB8440 VTB8441B VTB process photodiodes VTB8441 PDF

    FID08T13TX

    Abstract: 08T13TX photodiode 850nm PIN photodiode 10 nm
    Text: FID 08T13TX SILICON UN PHOTOnOK DESCRIPTION The FID08T13TX is a Si-PIN photodiode designed for use in optical local area network LAN system and optical data link system at 0.8jum wavelength region. A photodiode chip having 1000/xm 1mm diameter of photosensitive


    OCR Scan     		08T13TX FID08T13TX 300MHz, 374T75b FD08T13TX 08T13TX photodiode 850nm PIN photodiode 10 nm PDF

    InGaAs Photodiode 1550nm

    Abstract: Photodiode, 1550nm photodiode responsivity 1550nm 2 1310nm photodiode for 10Gbps 1310nm photodiode 1620nm
    Text: FCI-InGaAs-25C 10Gbps InGaAs Photodiode APPLICATIONS FEATURES  High  High Speed Optical Communications  OC-192  Optical Networking  Optical Measurement Speed, 10 Gbps Data Rates Dark Current  Front Illuminated  High Responsivity, Typ. 0.95A/W


    Original     		FCI-InGaAs-25C 10Gbps OC-192 1550nm FCI-InGaAs-25C 100pA 1100nm 100mV/div InGaAs Photodiode 1550nm Photodiode, 1550nm photodiode responsivity 1550nm 2 1310nm photodiode for 10Gbps 1310nm photodiode 1620nm PDF

    SFH 325 equivalent

    Abstract: t2856 SFH100 IRf 334
    Text: SIEMENS SFH 100 SILICON PHOTODIODE HIGH BLUE SENSITIVITY Package Dimensions in Inches mm .523 (13.3) -.020 (.5) .I -12B (3.25) T j » <3.05) I. f m _031 (.8) .028 (.7) .008(20) U r Radiant sensitive area 334 X 098 (8 5 x 2 .5 ) UN FEATURES Maximum Ratings


    OCR Scan     		PDF

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI SILICON AVALANCHE PHOTODIODES blE ]> • PD1XX2 SERIES bSHRflST 0014705 TiT » M I T S MITSUBISHI DISCRETE SC FOR OPTICAL COMMUNICATION AND RADAR SYSTEMS TYPE NAME DESCRIPTION FEATURES PD1XX2 is a silicon avalanche photodiode (Si-APD) • High speed response (pulse rise tim e 150ps)


    OCR Scan     		150ps) 800GHz) AD1000) PDF

    photodiodes mitsubishi

    Abstract: No abstract text available
    Text: blE ]> • GD1 4 7 2 5 MITSUBISHI DISCRETE 7 flfl IMITS MITSUBISHI InGaAs PHOTODIODES PD8XX2 SERIES SC FOR OPTICAL COMMUNICATION TYPE NAME DESCRIPTION PD8XX2 is an FEATURES InGaAs avalanche • High quantum efficiency photodiode suitable fo r receiving the light having a wavelength


    OCR Scan     		1600nm. photodiodes mitsubishi PDF

    GEO06314

    Abstract: Q62702-P936
    Text: Silizium-PIN-Fotodiode mit sehr kurzer Schaltzeit Silicon PIN Photodiode With Very Short Switching Time SFH 216 Wesentliche Merkmale • Speziell geeignet für Anwendungen im Bereich von 350 nm bis 1100 nm • Kurze Schaltzeit typ. 5 ns • Hermetisch dichte Metallbauform (TO-18)


    Original     		Q62702-P936 GEO06314 GEO06314 Q62702-P936 PDF

    GEOY6314

    Abstract: Fotodiode tci 571 Q62702-P936
    Text: Silizium-PIN-Fotodiode mit sehr kurzer Schaltzeit Silicon PIN Photodiode With Very Short Switching Time SFH 216 Wesentliche Merkmale • Speziell geeignet für Anwendungen im Bereich von 350 nm bis 1100 nm • Kurze Schaltzeit typ. 5 ns • Hermetisch dichte Metallbauform (TO-18)


    Original     		Q62702-P936 GEOY6314 GEOY6314 Fotodiode tci 571 Q62702-P936 PDF

    foto sensor

    Abstract: foto transistor tci 411 Q62702-P936 SFH216
    Text: SFH 216 SFH 216 feo06314 Silizium-PIN-Fotodiode mit sehr kurzer Schaltzeit Silicon PIN Photodiode with Very Short Switching Time Maße in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified. Wesentliche Merkmale Features ● Speziell geeignet für Anwendungen im


    Original     		feo06314 foto sensor foto transistor tci 411 Q62702-P936 SFH216 PDF

    ZTX384

    Abstract: BPW41D ultrasonic 4046 pll zpd200 low noise ir photodiode amplifier INTRODUCTION OF AUTOMATIC ROOM LIGHT CONTROL Design and construction Wave FM radio transmitter BPW41 IR DATA BPW41 circuit application 4046 self bias amplifier
    Text: Application Note 3 Issue 2 November 1995 Infra-Red Remote Control and Data Transmission An Introduction to Photodiodes - Load Circuits and Applications David Bradbury Introduction The use of short range remote control and data transmission systems in both


    Original     		BPW41D ZTX384 ultrasonic 4046 pll zpd200 low noise ir photodiode amplifier INTRODUCTION OF AUTOMATIC ROOM LIGHT CONTROL Design and construction Wave FM radio transmitter BPW41 IR DATA BPW41 circuit application 4046 self bias amplifier PDF

    CQY78

    Abstract: CQY77 CQY78 IV CQY77A DIN5033 BPW33 germanium photodiode PIN phototransistor 600 nm solar cell transistor infrared photodiode germanium
    Text: General IR and Photodetector Information Appnote 37 1. Detectors Radiation-sensitive Components Charge Carrier Generation in a Photodiode Figure 1 shows the basic design of a planar silicon photo-diode with an abrupt pn transition. Due to the differing carrier concentrations, a field region free of mobile carriers, the space charge


    Original     		BPW33) CQY78 CQY77 CQY78 IV CQY77A DIN5033 BPW33 germanium photodiode PIN phototransistor 600 nm solar cell transistor infrared photodiode germanium PDF

    quad photodiode

    Abstract: OP5925 OPR5911 very high area ir photodiode OPR5925 photodiode encoder
    Text: Surface Mount Quad Photodiode OPR5911, OPR5925 Features: • • • • Surface mountable Closely matched responsivity High temperature operation Separate cathode connections OPR5925 Description: Each OPR5911 and OP5925 device is a four-element photodiode that is enclosed in a compact polyamide chip


    Original     		OPR5911, OPR5925 OPR5925) OPR5911 OP5925 characteristi30 OPR5911 quad photodiode very high area ir photodiode OPR5925 photodiode encoder PDF

    Fotodiode

    Abstract: GEOY6314 Q62702-P936
    Text: Silizium-PIN-Fotodiode mit sehr kurzer Schaltzeit Silicon PIN Photodiode With Very Short Switching Time SFH 216 Wesentliche Merkmale Features • Speziell geeignet für Anwendungen im Bereich von 350 nm bis 1100 nm • Kurze Schaltzeit typ. 5 ns • Hermetisch dichte Metallbauform (TO-18)


    Original     		Q62702-P936 Fotodiode GEOY6314 Q62702-P936 PDF