mosfet protect
Abstract: IRF53 design ideas World transistors databook IRF530S LTC4251 LTC4252 LTC4252-1 LTC4253 SMAT70A
Text: DESIGN FEATURES –48V Hot Swap Controller Offers Comprehensive Protection for by YK Sim and Mitchell Lee Telecom Systems Introduction High performance, high reliability telecom systems employ distributed power modules to generate low voltage, high current supplies from a –48V
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LTC4251
LTC4251
OT-23
LTC4252
10-pin
LTC4253
16-pin
mosfet protect
IRF53
design ideas
World transistors databook
IRF530S
LTC4252
LTC4252-1
SMAT70A
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npn 8 transistor array
Abstract: "Microphone Preamplifiers" THAT380G pnp 8 transistor array
Text: T H AT Corporation Low-Noise Matched Transistor Array Die THAT 380G FEATURES • · · · · · · APPLICATIONS 4 Matched NPN and 4 Matched PNP Monolithic Construction Low Noise - 0.75 nV Hz PNP - 0.8 nV Hz (NPN) · Microphone Preamplifiers · Current Sources
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350MHz
93biasing
npn 8 transistor array
"Microphone Preamplifiers"
THAT380G
pnp 8 transistor array
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Untitled
Abstract: No abstract text available
Text: T H AT Corporation Low-Noise Matched Transistor Array Die THAT 380G FEATURES • · · · · · · APPLICATIONS 4 Matched NPN and 4 Matched PNP Monolithic Construction Low Noise - 0.75 nV Hz PNP - 0.8 nV Hz (NPN) · Microphone Preamplifiers · Current Sources
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350MHz
93biasing
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Untitled
Abstract: No abstract text available
Text: T H AT Corporation Low-Noise Matched Transistor Array Die THAT 380G FEATURES • · · · · · · APPLICATIONS 4 Matched NPN and 4 Matched PNP Monolithic Construction Low Noise - 0.75 nV Hz PNP - 0.8 nV Hz (NPN) · Microphone Preamplifiers · Current Sources
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350MHz
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478 SOCKET PINOUT
Abstract: 2N3906 PNP bipolar junction transistor pnp 8 transistor array "Microphone Preamplifiers" 312 2N3904 dual 2N3904 NPN Transistor Dual PNP Transistor THAT320S PNP monolithic Transistor Arrays THAT300
Text: T H AT Corporation Low-Noise Matched Transistor Array ICs THAT 300 Series FEATURES APPLICATIONS 4 Matched NPN Transistors 300 4 Matched PNP Transistors (320) 2 Matched NPNs and PNPs (340) 4 Matched NP6N - 4 Matched PNP (380) • Microphone Preamplifiers ·
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THAT300
1613u
1232u
478 SOCKET PINOUT
2N3906 PNP bipolar junction transistor
pnp 8 transistor array
"Microphone Preamplifiers"
312 2N3904
dual 2N3904 NPN Transistor
Dual PNP Transistor
THAT320S
PNP monolithic Transistor Arrays
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ic marking YK
Abstract: No abstract text available
Text: 2SC4901 Silicon NPN Epitaxial Application UHF / VHF wide band amplifier Features • High gain bandwidth product fT = 9 GHz Typ • High gain, low noise figure PG = 13.0 dB Typ, NF = 1.2 dB Typ at f = 900 MHz Outline 2SC4901 Absolute Maximum Ratings Ta = 25°C
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2SC4901
ic marking YK
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Hitachi DSA00279
Abstract: No abstract text available
Text: 2SC4901 Silicon NPN Epitaxial Application UHF / VHF wide band amplifier Features • High gain bandwidth product fT = 9 GHz Typ • High gain, low noise figure PG = 13.0 dB Typ, NF = 1.2 dB Typ at f = 900 MHz Outline 2SC4901 Absolute Maximum Ratings Ta = 25°C
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2SC4901
Hitachi DSA00279
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Hitachi DSA002756
Abstract: No abstract text available
Text: 2SC5218 Silicon NPN Epitaxial ADE-208-279 1st. Edition Application VHF / UHF wide band amplifier Features • High gain bandwidth product fT = 9 GHz typ • High gain, low noise figure PG = 13.0 dB typ, NF = 1.2 dB typ at f = 900 MHz Outline 2SC5218 Absolute Maximum Ratings Ta = 25°C
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2SC5218
ADE-208-279
Hitachi DSA002756
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KRC830U
Abstract: KRC831U KRC832U KRC833U KRC834U ic marking YK
Text: SEMICONDUCTOR KRC830U~KRC834U TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. B B1 FEATURES With Built-in Bias Resistors. 1 6 2 5 3 4 A C A1 Reduce a Quantity of Parts and Manufacturing Process.
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KRC830U
KRC834U
KRC833U
KRC831U
KRC832U
KRC833U
KRC834U
ic marking YK
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KRC830E
Abstract: KRC831E KRC832E KRC833E KRC834E ic marking YK
Text: SEMICONDUCTOR KRC830E~KRC834E TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. B B1 FEATURES C A Reduce a Quantity of Parts and Manufacturing Process. 1 6 2 5 3 4 A1 Simplify Circuit Design.
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KRC830E
KRC834E
KRC833E
KRC831E
KRC832E
KRC833E
KRC834E
ic marking YK
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2SC162
Abstract: 2SC1627 251C 2SA817 CRYSTAL 2SC
Text: ^'jDyNPNxey^mB^yvz.sK.pcTnñ SILICON NPN EPITAXIAL TRANSISTOR PCT PROCESS TENTATIVE o O mm&mmm Unit in mm o Driver Stag Amplifier Applications o Voltage Amplifier Applications t*r y /y * yk & b 2SA817 *51MAX. o 20-251 • Complementary to 2SA817 • 20'25W
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2SA817
2SC162
2SC1627
251C
CRYSTAL 2SC
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Untitled
Abstract: No abstract text available
Text: TOSHI BA {DISCRETE/OPTO} 9097250 T O S H I B A DISCRETE/OPTO TO DE 1 ^ 7 5 5 0 ODlbCHQ 5 | 90D 16090 Df-33-3 S TOSHIBA GTR MODULE TOSHIBA SEMIC0NDUCT0R MG 1 5 0 M 2 YK 1 TECHNICAL DATA SILICON NPN TRIPLE DIFFUSED TYPE HIGH POWER SWITCHING APPLICATIONS. tlOTOR CONTROL APPLICATIONS.
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Df-33-3
MG150M2YK1
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K034
Abstract: nopma KBAA cccp
Text: AKAÆEMHfl H A YK CCCP KOMHCCHfl nO npOEJIEMAM MHPOBOrO OKEAHA OTBeTCTBeHHLie pejjaKTOpw: axartcMHK JI.M î BpexoeCKux, floKTop fr m m io -MaTeMaTH'iecKHx H ayn H .E . A u d p e e e a MOCKBA ’’HAYKA” 1989 JIHTEPATypA 1. BpexoecKux JI.M. Bojihm b cjiohctux cpenax. M.: Hayica, 1957. 501 c.
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AN3224K
Abstract: AN3224 5 pin transistor for 12v 3 amp DRVCC12
Text: AN3224K AN3224K V T R 4 ^ 'y K f f l ! B $ i 7 r > ,y 0 ! & /R e c o r d i n g S ig n a l • «R • T y p e m AN3224K1 J,V TRc04'^yK ffll£îST>7'|5]ïfi't LTtSrïf m ft A m p lifie r 2 -H e a d T-'Kffc m f]V 's \-3 -y -7 -r-s 7 J ftM • X 'i l*Jjl • i t »¡T ifi : VCC= 12V
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AN3224K
AN3224K1
TRc04'
AN3224K
AN3224
5 pin transistor for 12v 3 amp
DRVCC12
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Marking XA XB XC XD XE XF XH XI XJ XK XM
Abstract: marking YJ transistors YK NPN RN2608 - RN2908 QF npn Marking 47 marking YB YB MARKING ic marking YK kn marking
Text: 3. List of Principal Characteristics of Built-In Resistor Transistors BRT SSM 3. List of Principal Characteristics of Built-In Resistor Transistors (BRT) * 3.1 Sm ail Super M ini Typ e (SSM) Polarity Type No. RN1101 RN1102 RN1103 RN1104 RN1105 RN1106 RN1107
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RN1101
RN1102
RN1103
RN1104
RN1105
RN1106
RN1107
RN1108
RN1109
RN1110
Marking XA XB XC XD XE XF XH XI XJ XK XM
marking YJ transistors
YK NPN
RN2608 - RN2908
QF npn
Marking 47
marking YB
YB MARKING
ic marking YK
kn marking
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2sd371
Abstract: 2SD371 TOSHIBA 2SD371-R 2SD371-Y 2SB531 AC73 2SD371R 2SD371Y 30W hi-fi audio power amplifier
Text: > Ua > N P N E l U f 2SD371 SILICON NPN TRIPLE DIFFUSED MESA TRANSISTOR TENTATIVE O iiz fr iite ffl O Power Amplifier Applications 9 9 \ \ : Pc = 50W •liiE tt. : V ceo = SOW . 2SB531 t 3 'S 7 ‘ ') '•> *9 i - ? . • 30W H i-Fi 'Jr— 71' ■< yy’
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2SD371
2SB531
2SB531
2SD371
2SD371â
2SD371 TOSHIBA
2SD371-R
2SD371-Y
AC73
2SD371R
2SD371Y
30W hi-fi audio power amplifier
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PN3563
Abstract: No abstract text available
Text: I V , PN3563 PN5130 PN5132 NPN SILICON RP SMALL SIGNAL TRANSISTORS CASE TO-92A THE ABOVE TYPES ARE NPN SILICON PLANAR EPITAXIAL TRANSISTORS FOR RF SMALL SIGNAL APPLICATIONS. PN3563 PN5130 PN5132 EBC fill PN3563 ABSOLUTE MAXIMUM RATINGS PN5I3Q PN5132 Collector-Base Voltage
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PN3563
PN5130
PN5132
O-92A
250mW
PN3563
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2SC3752
Abstract: npn 10a 800v GDB013D
Text: Ordering number: EN 1971A 2SC3752 N0.1971A I NPN Triple Diffused Planar Silicon Transistor SAiYOi 800V/3A Switching Regulator Applications Features . High breakdown voltage and high reliability . Fast switching speed . Wide ASO . Adoption of MBIT process . Micaless package facilitating mounting
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2SC3752
00V/3A
300ps
470fl
D0H0131
2SC3752
npn 10a 800v
GDB013D
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Sunshine Science
Abstract: sunshine ST-302 82c08 22C02
Text: n ffigfifi ST-302 PHOTOTRANSISTORS SU NSH INE SC IE N C E su n sh in e DIMENSIONS U n it: mm S T -3 0 2 & v l i v b ? > * s Z 2 V to T he S T -302 is a h ig h -se n sitivity NPN silicon p ho to tra n sisto r m o u n te d in a c le a r low p ro file s id e -v ie w in g p a c k a g e . T h is
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ST-302
ST-302
2856K
100CTC)
Ta-25
Sunshine Science
sunshine
82c08
22C02
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U1W npn
Abstract: NPN VCEo 1000V transistor yk
Text: MG75M2YK1 GTR MODULE SILICON NPN TRIPLE DIFFUSED TYPE HIGH POWER SWITCHING APPLICATIONS. Unit in mm MOTOR CONTROL APPLICATIONS. . The Collector is Isolated from Case. . 2 Power Transistors and 2 Free Wheeling Diodes are Built Into 1 Package. . High DC Current Gain : hFE=100 Min. (Ic=75A)
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MG75M2YK1
U1W npn
NPN VCEo 1000V
transistor yk
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2SC4171
Abstract: No abstract text available
Text: Ordering number: EN 2547A 2SC4171 NPN Triple Diffused Planar Silicon Transistor Switching Regulator Applications Features High breakdown voltage V CBq £800V Fast switching speed Wide ASO Suitable for sets whose height is restricted Absolute Maximum Ratings at Ta=25°C
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2SC4171
Tcs25Â
2SC4171
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Untitled
Abstract: No abstract text available
Text: 3A I H 2SC4978 CTE3S8 VSERIES NPN) a * 9 - 121 Outline Dimensions A bsolute Maximum R atings m CJ3 nC 7=ï Symbol s Item & ft Conditions T s tg Storage Temperature i£ £ -g i5 > & * Junction Temperature 3 ^ ? • 'x: — x i t Collector to Base Voltage
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2SC4978
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v 817 y
Abstract: No abstract text available
Text: H ITACH I 2SC5218-Silicon NPN Epitaxial Transistor Application MPAK V HF & UHF wide band amplifier Features • High gain bandwidth product f j = 9 GHz typ. • High gain, low noise figure PG = 13.0 dB typ., NF = 1.2 dB typ. at f = 900 MHz W- Table 1 Absolute M axim um Ratings Ta = 25°C
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2SC5218------Silicon
2SC5218
SC-59A
v 817 y
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ldm-a
Abstract: No abstract text available
Text: KSC2786 NPN EPITAXIAL SILICON TRAN SISTO R TV PIF AMPLIFIER, FM TUNER RF AMPLIFIER, MIXER, OSCILLATOR • High Current-Gain-Bandwidth Product ff“600MHz Typ • High Power Gain Gre»22dB at f-IOOMHz ABSOLUTE MAXIMUM RATINGS { l k=25X:) Characteristic Sym bol
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KSC2786
600MHz
I1001
ldm-a
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