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Advanced Semiconductor Inc MVAM108 Varactor Diodes 15:1 tuning range 12V 50mA
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Mouser Electronics	MVAM108		9			1 $10.59 10 $9.74 100 $8.23 1000 $6.71 10000 $6.71	Buy Now
Motorola Semiconductor Products MVAM108 VARACTOR DIODE,SINGLE,500PF C(T),TO-226AC
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Quest Components	MVAM108		1			1 $1.2525 10 $1.2525 100 $1.2525 1000 $1.2525 10000 $1.2525	Buy Now

MVAM108 Datasheets (3)

Part	Manufacturer	Description	Datasheet Type	PDF
MVAM108	Advanced Semiconductor	SILICON VARACTOR DIODE	Original	PDF
MVAM108	Motorola	European Master Selection Guide 1986	Scan	PDF
MVAM108M2	Motorola	12V Vrrm, 500pF Capacitance Varactor Diode	Scan	PDF

MVAM108 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
MVAM108 Abstract: varactor diode datasheet varactor Text: MVAM108 SILICON VARACTOR DIODE PACKAGE STYLE DESCRIPTION: The ASI MVAM108 is a Silicon Tuning Varactor Diode. FEATURES INCLUDE: • 15:1 Minimum Tuning Range • Q - 150 Minimum MAXIMUM RATINGS IF 50 mA VR 12 V PDISS 280 mW @ TC = 25 C TJ -55 C to +125 C TSTG	Original	PDF	MVAM108 MVAM108 varactor diode datasheet varactor
MC68B21CP Abstract: xcm916x1cth16 transistor marking code 12W SOT-23 sg379 MC68B54P XC68HC805P18CDW mc68b50cp MC2830 NE555N CHN NE555N Text: SG379/D REV 7 Semiconductor Products Sector NORTH AMERICA SALES AND DISTRIBUTION PRICE LIST THIS BOOK IS IN COMPUTER SORT PRODUCT CLASSIFICATION – Please see General Information Section 1.3 EFFECTIVE DATE: JANUARY 10, 1998 General Information 1 Cross References	Original	PDF	SG379/D 1N965BRL ZEN15V 1N751AS 1N967BRL ZEN18V 1N751ASRL 1N968BRL ZEN20V MC68B21CP xcm916x1cth16 transistor marking code 12W SOT-23 sg379 MC68B54P XC68HC805P18CDW mc68b50cp MC2830 NE555N CHN NE555N
transistor mosfet buv18a Abstract: M143206EVK MMBF4856 lm358 IC 68hc05sc24 telephone line interface circuit bc517 MC68B54 XC68HC705P9 MPX100ap BUV18A Text: Device Index and Subject Index In Brief . . . Page Device Index . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7.1–1 General Index . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7.2–1 Subject Index . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7.2–9	Original	PDF
BC337 BC547 Abstract: MSB81T1 MBT3904DW9T1 marking 6AA SOD MVAM115 automatic stabilizer circuit diagram range 210 to 250 volts zt751 MBT3904DW9 transistor 2N4125 CT BC547 TRANSISTOR PIN DIAGRAM Text: Small Signal Transistors, FETs and Diodes In Brief . . . New in this revision is Motorola’s GreenLine portfolio of devices. They feature energy–conserving traits superior to those of our existing line of standard parts for the same usage. GreenLine devices can actually help reduce the	Original	PDF	MDC5000T1 MDC3105LT1 BC337 BC547 MSB81T1 MBT3904DW9T1 marking 6AA SOD MVAM115 automatic stabilizer circuit diagram range 210 to 250 volts zt751 MBT3904DW9 transistor 2N4125 CT BC547 TRANSISTOR PIN DIAGRAM
MSC2404 Abstract: MPF3821 BC237 MPS8093 BCY72 MMBF4856 MAD130P MPS3866 bcy71 ALTERNATIVE BSS72 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA PNP RF Amplifier Transistor Surface Mount MSA1022-CT1 Motorola Preferred Device COLLECTOR 3 3 2 1 2 BASE 1 EMITTER MAXIMUM RATINGS TA = 25°C Rating Symbol Value Unit Collector–Base Voltage VCBO – 30 Vdc Collector–Emitter Voltage	Original	PDF	MSA1022-CT1 Emitte218A MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 MV1642 MPF3821 BC237 MPS8093 BCY72 MMBF4856 MAD130P MPS3866 bcy71 ALTERNATIVE BSS72
BF245 Abstract: BC237 MSC2404 mps8093 bf244 MSA1022 MSC2295-BT1 msc2295 MAD1107P MPS6568 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN RF Amplifier Transistors Surface Mount COLLECTOR 3 MSC2295-BT1 MSC2295-CT1 Motorola Preferred Devices 3 2 BASE 1 EMITTER 2 1 MAXIMUM RATINGS TA = 25°C Rating Symbol Value Unit Collector–Base Voltage V(BR)CBO 30	Original	PDF	MSC2295-BT1 MSC2295-CT1 MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 MV1642 BF245 BC237 mps8093 bf244 MSA1022 msc2295 MAD1107P MPS6568
stencil Abstract: BC237 automatic heat detector project report BC393 equivalent Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Schottky Barrier Diode BAT54T1 These Schottky barrier diodes are designed for high speed switching applications, circuit protection, and voltage clamping. Extremely low forward voltage reduces conduction loss. Miniature surface mount package is excellent for hand held and	Original	PDF	BAT54T1 Ju218A MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 MV1642 stencil BC237 automatic heat detector project report BC393 equivalent
BC237 Abstract: level shifter 2N5401 2771 040 0002 MUN5214T1 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Bias Resistor Transistor MUN5211T1 SERIES NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network Motorola Preferred Devices This new series of digital transistors is designed to replace a single device	Original	PDF	SC-70/SOT-323 Spa218A MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 MV1642 BC237 level shifter 2N5401 2771 040 0002 MUN5214T1
bs170 replacement Abstract: BC237 BC30 transistor K 2056 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA TMOS FET Switching BS170 N–Channel — Enhancement 1 DRAIN  2 GATE 3 SOURCE MAXIMUM RATINGS 1 Rating Drain – Source Voltage Gate–Source Voltage — Continuous — Non–repetitive tp ≤ 50 µs Drain Current(1)	Original	PDF	BS170 226AA) DS218A MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 bs170 replacement BC237 BC30 transistor K 2056
transistor bc237 bc337 Abstract: replacement transistor BC337 bc337 TRANSISTOR equivalent bc338 equivalent BC337 TO-92 Generic BC337 circuit example BC160-16 BC337-25 "pin compatible" BC237 BC338 REPLACEMENT Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Amplifier Transistors NPN Silicon BC337,-16,-25,-40 BC338,-16,-25,-40 COLLECTOR 1 2 BASE 3 EMITTER 1 MAXIMUM RATINGS 2 Rating Symbol BC337 BC338 Unit Collector – Emitter Voltage VCEO 45 25 Vdc Collector – Base Voltage	Original	PDF	BC337 BC338 226AA) Junction218A MSC1621T1 MSC2404 MSD1819A MV1620 transistor bc237 bc337 replacement transistor BC337 bc337 TRANSISTOR equivalent bc338 equivalent BC337 TO-92 Generic BC337 circuit example BC160-16 BC337-25 "pin compatible" BC237 BC338 REPLACEMENT
BC237 Abstract: MPS-A70 equivalent Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Amplifier Transistor MPSA70 PNP Silicon COLLECTOR 3 2 BASE 1 EMITTER 1 2 3 CASE 29–04, STYLE 1 TO–92 TO–226AA MAXIMUM RATINGS Rating Symbol Value Unit Collector – Emitter Voltage VCEO –40 Vdc Emitter – Base Voltage	Original	PDF	MPSA70 226AA) CHARACTERI218A MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 BC237 MPS-A70 equivalent
bc182 equivalent 2n2907 Abstract: bc183 equivalent BC237 BC182 bc184 BF245 bc184 equivalent Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Amplifier Transistors BC182,A,B NPN Silicon BC183 BC184 COLLECTOR 1 2 BASE 3 EMITTER 1 MAXIMUM RATINGS 2 Rating Symbol BC182 BC183 BC184 Unit Collector – Emitter Voltage VCEO 50 30 30 Vdc Collector – Base Voltage VCBO	Original	PDF	BC182 BC183 BC184 BC184 226AA) Junction218A MSC1621T1 MSC2404 bc182 equivalent 2n2907 bc183 equivalent BC237 BF245 bc184 equivalent
transistor MPS5771 Abstract: BC237 bfw4 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA High-Speed Switching Diode MMBD914LT1 Motorola Preferred Device 3 CATHODE 1 ANODE 3 1 2 MAXIMUM RATINGS Rating Symbol Value Unit Reverse Voltage VR 100 Vdc Forward Current IF 200 mAdc IFM surge 500 mAdc Symbol Max Unit	Original	PDF	MMBD914LT1 236AB) DE218A MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 transistor MPS5771 BC237 bfw4
P2d MARKING CODE Abstract: H2A transistor ev 2816 BC237 transistor 2N2906 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA High Voltage Transistor PZTA92T1 PNP Silicon COLLECTOR 2,4 BASE 1 EMITTER 3 MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage VCEO – 300 Vdc Collector–Base Voltage VCBO –300 Vdc Emitter–Base Voltage	Original	PDF	PZTA92T1 261AA ELECTRI218A MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 P2d MARKING CODE H2A transistor ev 2816 BC237 transistor 2N2906

2N5457 MOTOROLA Abstract: 2N5457 equivalent BC237 transistor 2N5457 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA JFETs Ċ General Purpose N–Channel — Depletion 2N5457 1 DRAIN *Motorola Preferred Device 3 GATE 2 SOURCE MAXIMUM RATINGS Rating Symbol Value Unit Drain – Source Voltage VDS 25 Vdc Drain – Gate Voltage VDG 25 Vdc	Original	PDF	2N5457 226AA) MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 MV1642 2N5457 MOTOROLA 2N5457 equivalent BC237 transistor 2N5457
BC237 Abstract: jedec package TO-226AA Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Dual Series Switching Diode BAV99LT1 ANODE 1 Motorola Preferred Device CATHODE 2 3 CATHODE/ANODE 3 1 2 CASE 318 – 08, STYLE 11 SOT– 23 TO – 236AB MAXIMUM RATINGS (EACH DIODE) Rating Symbol Value Unit Reverse Voltage	Original	PDF	BAV99LT1 236AB) J218A MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 BC237 jedec package TO-226AA
Motorola MVAM125 Abstract: MVAM109 Text: MVAM108* MVAM109* MVAM115* MVAM125* SILICON TUNING DIODES . . d e s ig n e d fo r e le c tro n ic tu n in g o f A M re c e iv e rs a n d h ig h cap acita n ce, h ig h tu n in g ra tio a p p lic a tio n s . • H ig h C a p a c ita n c e R atio — C r = 15 M in ,	OCR Scan	PDF	MVAM108* MVAM109* MVAM115* MVAM125* T0-226AC) MVAM108 MVAM109 MVAM115 MVAM125 Motorola MVAM125
VAM109 Abstract: MVAM109 MVAM115 mvam108 C1C9 Text: MVAM108* MVAM109* MVAM115* MVAM125* SILICON TUNING DIODES . . . d e sig n e d fo r e le ctro n ic tu n in g o f AM receivers and high capacitance, h ig h tu n in g ra tio a pp licatio n s. • H igh C apacitance R atio — C r = 15 M in , M VAM 108, 115, 125	OCR Scan	PDF	MVAM115 VAM125 MVAM108* MVAM109* MVAM115* MVAM125* O-226AC) MVAM108, MVAM109, MVAM115, VAM109 MVAM109 mvam108 C1C9
D 92 M - 02 DIODE Abstract: fro 108 MVAM109 mvam108 0/fro 108 M 108 MVAM-1 Text: MVAM108 MVAM109 MVAM115 MV1M125 I n ter n a tio n a l S e m ic o n d u c to r , I n c . SILICON TUNING DIODES T U N IN G D IO D E S W ITH V E R Y H IG H C A P A C IT A N C E RA TIO • High Capacitance Ratio CR= 15 Min for MVAM108, 115, 125 ■ Guaranteed Diode Capacitance	OCR Scan	PDF	MVAM108 MVAM109 MVAM115 MV1M125 MVAM108, 0D378 MVAM125 VAIV11 D 92 M - 02 DIODE fro 108 0/fro 108 M 108 MVAM-1
MVAM109 Abstract: MVAM108 MVAM115 nvam109 motorola mvam109 MVAM125 MVAM115 TUNING DIODE Motorola MVAM125 Am tuning DIODE MOTOROLA mvam108 Text: MVAM108* MVAM109* MVAM115* MVAM125* SILICON TUNING DIODES . . . designed for electronic tuning of A M receivers and high capacitance, high tuning ratio applications. • High Capacitance Ratio — C r = 15 M in , M V A M 108, 115, 125 CASE 182-02, STYLE 1	OCR Scan	PDF	MVAM108, MVAM115, MVAM125 MVAM108 MVAM109 MVAM115 MVAM108* MVAM109* MVAM109 MVAM115 nvam109 motorola mvam109 MVAM125 MVAM115 TUNING DIODE Motorola MVAM125 Am tuning DIODE MOTOROLA mvam108
MVAM109 Abstract: MOTOROLA mvam108 MVAM115 motorola mvam109 diode b3l Am tuning DIODE MVAM108 MVAM115 TUNING DIODE MVAM125 MVAM115 TUNING DIODE Motorola Text: MVAM108* MVAM109* MVAM115* MVAM125* SILICON TUN IN G DIODES . . . d e sign e d for electronic tun in g of A M receivers and h igh capacitance, h igh tu n in g ratio applications. • H igh C apacitance Ratio — C r = 15 Min , M V A M 1 0 8 , 115, 125 CASE 182-02, STYLE 1	OCR Scan	PDF	MVAM108, MVAM115, MVAM125 MVAM108 MVAM109 MVAM115 MVAM108* MVAM109* MVAM109 MOTOROLA mvam108 MVAM115 motorola mvam109 diode b3l Am tuning DIODE MVAM115 TUNING DIODE MVAM125 MVAM115 TUNING DIODE Motorola
MVAM109 Abstract: MOTOROLA mvam108 MVAM115 MVAM108 vam109 motorola mvam109 Text: MOTOROLA MVAM108 MVAM109 MVAM115 MVAM125 SEM ICONDUCTOR TECHNICAL DATA v v c SILICON TUNING DIODE . . . d e s ig n e d fo r e le c tr o n ic tu n in g o f A M re c e iv e rs a n d h ig h capacitance, high tu n in g ratio applications. • High Capacitance Ratio — Cp = 1 5 Min .	OCR Scan	PDF	MVAM108 MVAM109 MVAM115 MVAM125 MOTOROLA mvam108 vam109 motorola mvam109
mvam108 Abstract: C8546A Text: I nternational C8546A thru C8546D S em ico nducto r , I nc . SILICON TUNING DIODES TUNING DIODES WITH VERY HIGH CAPACITANCE RATIO • High Capacitance Ratio CR= 15 Min for MVAM108, 115, 125 ■ Guaranteed Diode Capacitance ■ Guaranteed Figure of Merit t°	OCR Scan	PDF	C8546A C8546D MVAM108, 8546B 8546D C8546A C8546B C8546C mvam108
MMBF112L Abstract: MFE521 MMBF112 2N3797 equivalent MFE131 equivalent MPS5210 BC557 SOT23 8C448 BC459C mfe211 Text: motorcla sc xstrs / r ia e i o I bH t,?as4 3 o o ö s t ii Small-Signal Bipolar Transistors Plastic-Encapsulated M o to ro la 's s m a ll-s ig n a l T O -2 26 p la s tic tra n s is to rs e n c o m p a s s h u n d re d s o f d e v ic e s w ith a w id e v a rie ty	OCR Scan	PDF	06050L MMBD914L BAS16L BAL99L MBAV70L MBAV99L MBAV74 BD2835XL MBD2836XL MMBD2837XL MMBF112L MFE521 MMBF112 2N3797 equivalent MFE131 equivalent MPS5210 BC557 SOT23 8C448 BC459C mfe211

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Advanced Semiconductor Inc MVAM108

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MVAM108 Datasheets (3)

MVAM108 Datasheets Context Search

MVAM108

MC68B21CP

transistor mosfet buv18a

BC337 BC547

MSC2404

BF245

stencil

BC237

bs170 replacement

transistor bc237 bc337

BC237

bc182 equivalent 2n2907

transistor MPS5771

P2d MARKING CODE

2N5457 MOTOROLA

BC237

Motorola MVAM125

VAM109

D 92 M - 02 DIODE

MVAM109

MVAM109

MVAM109

mvam108

MMBF112L