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    KM93CS56 Search Results

    KM93CS56 Datasheets (3)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    KM93CS56 Samsung Electronics 2K / 4K Bit Serial Electrically Erasable PROM Scan PDF
    KM93CS56G Samsung Electronics 2K / 4K Bit Serial Electrically Erasable PROM Scan PDF
    KM93CS56GD Samsung Electronics 2K / 4K Bit Serial Electrically Erasable PROM Scan PDF

    KM93CS56 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    atmel 93C46

    Abstract: 93c46 atmel 93C46 national 93C46 national semiconductor 24c04 Atmel 93c46 I2C atmel 24c04 ATMEL 24c32 atmel 24c02 24c04a atmel
    Text: SERIAL EEPROM Serial EEPROM Cross Reference Guide The purpose of this document is to provide a quick way to determine the closest Microchip equivalent to Serial EEPROMs produced by other manufacturers. The cross reference section is broken down by manufacturer and lists all parts from that manufacturer, and the


    Original     		DS21090D-page atmel 93C46 93c46 atmel 93C46 national 93C46 national semiconductor 24c04 Atmel 93c46 I2C atmel 24c04 ATMEL 24c32 atmel 24c02 24c04a atmel PDF

    ATMEL 93C86

    Abstract: 93c46 rotated atmel 708 atmel 93C46 atmel 222 93C46 atmel 717 93C46 national X24c64 93c46 atmel 93c46 spi
    Text: SERIAL EEPROM Serial EEPROM Cross Reference Guide The purpose of this document is to provide a quick way to determine the closest Microchip equivalent to Serial EEPROMs produced by other manufacturers. The cross reference section is broken down by manufacturer and lists all parts from that manufacturer, and the


    Original     		DS21090F-page ATMEL 93C86 93c46 rotated atmel 708 atmel 93C46 atmel 222 93C46 atmel 717 93C46 national X24c64 93c46 atmel 93c46 spi PDF

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY KM93CS56/KM93CS66 CMOS EEPROM 2K /4 K Bit Serial Electrically Erasable PROM FEATURES GENERAL DESCRIPTION • Single 5 volt supply • Write protection with memory pointer • Low power consumption — Active: 3 mA TTL — Standby: 100 pA (TTL)


    OCR Scan     		KM93CS56/KM93CS66 KM93CS66 KM93CS56 KM93CS56/66 PDF

    KM93CS56

    Abstract: KM93CS66
    Text: S A M S UN G E L E C T R O N I C S INC b7E D • 7^4142 KM93CS56/KM93CS66 GO].bflS4 3 SflGK CMOS EEPROM 2 K /4 K Bit Serial Electrically Erasable PROM FEATURES GENERAL DESCRIPTION • Single 5 volt supply • Write protection with memory pointer • Low power consumption


    OCR Scan     		b4142 KM93CS56/KM93CS66 KM93CS66 KM93CS56 KM93CS56/66 71b414E Q01bflb3 KM93CS56 KM93CS66 PDF

    Untitled

    Abstract: No abstract text available
    Text: b7E D SAM S UN G E L E C T R O N I C S INC • 7^4142 GülbñSM ^ 3 CMOS EEPROM KM93CS56/KM93CS66 2 K /4 K Bit Serial Electrically Erasable PR O M FEATURES GENERAL DESCRIPTION • Single 5 volt supply • Write protection with memory pointer • Low power consumption


    OCR Scan     		KM93CS56/KM93CS66 250jiA KM93CS66 KM93CS56 KM93CS56/66 PDF

    93CS56

    Abstract: 93CS56 14 pin 93CS56 14
    Text: CMOS EEPROM KM93CS56/KM93CS66 2 K /4 K Bit Serial Electrically Erasable PR O M FEATURES GENERAL DESCRIPTION • Single 5 volt supply • Write protection with memory pointer • Low power consumption — Active: 3 mA TTL — Standby: 25<VA (TTL) • Memory organization:


    OCR Scan     		KM93CS56/KM93CS66 KM93CS66 KM93CS56 KM93CS56/66 93CS56 93CS56 14 pin 93CS56 14 PDF

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY KM93CS56/KM93CS66 CMOS EEPROM 2 K /4 K Bit Serial Electrically Erasable PR O M FEATURES GENERAL DESCRIPTION • Enhanced extended operating voltage: 2.7V-S.5V • Write protection with memory pointer • Low power consumption — Active : 1 mA


    OCR Scan     		KM93CS56/KM93CS66 KM93CS66 KM93CS56 PDF

    toshiba 32k*8 sram

    Abstract: M5M23C100 M5M5265 seeq DQ2816A M5M23C400 MB832001 HITACHI 64k DRAM TC511000 KM41C464 TC51464
    Text: FUNCTION GUIDE MEMORY ICs 3. CROSS REFERENCE GUIDE 3.1 DRAM Density 64 K X 1 256K X 1 X4 1M X X 4M X X 3.2 Mode Org. 1 4 1 4 Samsung Toshiba Hitachi Fujitsu NEC MSM3764 KM4164 Page Okl F. Page KM41C256 TC51256 Nibble KM41C257 TC51257 HM51256 S. Column KM41C258


    OCR Scan     		KM4164 KM41C256 KM41C257 KM41C258 KM41C464 KM41C466 KM41C1000 KM41C1001 KM41C1002 KM44C256 toshiba 32k*8 sram M5M23C100 M5M5265 seeq DQ2816A M5M23C400 MB832001 HITACHI 64k DRAM TC511000 TC51464 PDF

    41C1000

    Abstract: fujitsu 814100 TC 55464 toshiba HN62304 hn623257 658128 816b 41c464 hn62324 M7202A
    Text: MEM ORY ICs FUNCTION GUIDE 3. C R O S S REFERENCE GUIDE 3.1 DRAM Density Org. Samsung Mode Toshiba Hitachi Fujitsu H M 51 256 M B 81256 NEC Oki 64K X 1 Page K M 416 4 25 6 K X 1 F. Page KM 41C256 TC 51256 Nibble KM 41C257 TC51257 S. C olu m n KM 41C258 TC 51258


    OCR Scan     		41C256 41C257 41C258 41C464 41C466 41C1000 44C256 44C258 44C1002 TC51257 fujitsu 814100 TC 55464 toshiba HN62304 hn623257 658128 816b hn62324 M7202A PDF

    23C8001A

    Abstract: 23C8001 KM23C2001 2001h 23c4001
    Text: TABLE OF CONTENTS I. FUNCTION GUIDE 1. 2. 3 4 II. EEPROM DATA SHEETS 1 2 3 4. 5 6. 7. 8. 9. 10 11. 12 13. 14. III. In tro d u ctio n. v -. 11 Product G uide. \ . 28


    OCR Scan     		32000G 32000FP. 23C32100G 32100FP 23C8001A 23C8001 KM23C2001 2001h 23c4001 PDF

    41C464

    Abstract: 41C1000 TC55B8128 424170 NEC CY70199 44C1000 IOT7164 HN62308BP HN62404P TC5116100
    Text: MEM ORY ICs CRO SS REFERENCE GUIDE 3. C R O SS REFERENCE GUIDE 3.1 DRAM Density 25 6 K Org. X 1 X 4 1M X 1 X 4 4M X 1 X 4 x8 16M M ode Sa m su n g F. Page KM 41C256 TC 51256 N ibble KM 41C257 TC 51257 S. C o lu m n KM 41C258 TC 51258 H M 51 258 MB81258 F. Page


    OCR Scan     		41C256 41C257 41C258 41C464 41C466 41C1000 41C1002 44C256 44C258 41C4000 TC55B8128 424170 NEC CY70199 44C1000 IOT7164 HN62308BP HN62404P TC5116100 PDF

    TC55B8128

    Abstract: KM23C4000AG TC534000AF HN62308BP TC551632 hitachi cross mb83 68512U HITACHI 64k DRAM TC55B4256
    Text: MEMORY ICs CROSS REFERENCE GUIDE 3. CROSS REFERENCE GUIDE 3.1 DRAM D ensity 2 56 K 1M Org. x1 Toshiba F Page T C 51256 N ib b le K M 4 1C 2 5 7 T C 51257 H ita ch i H M 51 2 5 6 — F u jitsu M B 8 12 5 6 M B 8 12 5 7 NEC /P D 41256 — Oki M S M 5 1C 2 5 6


    OCR Scan     		TC511001 TC514101 514170B 514280B TC5316200P KM2X16100 KM23C16000G KM23C16100G KM23C16000FP KM23C16100FP TC55B8128 KM23C4000AG TC534000AF HN62308BP TC551632 hitachi cross mb83 68512U HITACHI 64k DRAM TC55B4256 PDF

    PE 8001A

    Abstract: 23C1001 KM41C256P 23C1010 KM41C464P KM68512 km41c256 TFK 805 TFK 001
    Text: MEMORY ICs FUNCTION GUIDE 2. PRODUCT GUIDE 2.1 Dynamic RAM C apacity 256K bit 1M bit O rganization Speed ns T e ch n ology KM41C256P 255K X 1 70/80/100 CMOS Fast Page 16 Pm DIP Now KM41C256J 256 K X 1 70/80/100 CMOS Fast Page 16 Pm PLCC Now KM41C256Z 256Kx 1


    OCR Scan     		KM41C256P KM41C256J KM41C256Z KM41C257P KM41C257J KM41C257Z KM41C258P KM41C258J KM41C258Z KM41C464P PE 8001A 23C1001 23C1010 KM68512 km41c256 TFK 805 TFK 001 PDF

    KM424C256Z

    Abstract: KM41C464 PB20 KM64258 KM68512 KMM5362000 KM23C2 64k 30-pin SIMM KM23C4000A KM41C4000BJ
    Text: MEMORY ICs FUNCTION GUIDE 2. PRODUCT GUIDE 2.1 Dynamic RAM Capacity 256K bit Part Number KM41C256P KM41C255J KM41C258Z KM41C257P KM41C257J KM41C257Z KM41C25BP KM41C258J KM41C258Z Features Packages Remark 256K X 1 256K X 1 256K X 1 256K X 1 70/80/100 70/80/100


    OCR Scan     		KM41C256P KM41C255J KM41C258Z KM41C257P KM41C257J KM41C257Z KM41C25BP KM41C258J KM41C464P KM424C256Z KM41C464 PB20 KM64258 KM68512 KMM5362000 KM23C2 64k 30-pin SIMM KM23C4000A KM41C4000BJ PDF

    KMM591000AN

    Abstract: KM41C464P KM424C256Z KMM591000B KM41C464 KMM584000B 4Mx1 nibble
    Text: MEMORY ICS FUNCTION GUIDE 2. PRODUCT GUIDE 2.1 Dynamic RAM Capacity 256K bit Part Number KM41C256P 256K X 1 KM41C256J 256K X 1 KM41C256Z KM41C257P 256K X 1 256Kx 1 70/80/100 KM41C257J 256K X 1 256K X 1 Packages Remark CMOS Fast Page 16 Pin DIP Fast Page 18 Pin PLCC


    OCR Scan     		KM41C256P KM41C256J KM41C256Z KM41C257P KM41C257J KM41C257Z KM41C258P KM41C258J KM41C258Z KM41C464P KMM591000AN KM424C256Z KMM591000B KM41C464 KMM584000B 4Mx1 nibble PDF

    al 232 nec

    Abstract: TC55B4257 MB832001 NM9306 eeprom Cross Reference D41264 TC5116100 HN28C256 NM9307 oki cross reference
    Text: CROSS REFERENCE GUIDE MEMORY ICs CROSS REFERENCE GUIDE 1 .DRAM Density 256K Org. X1 x4 1M x1 X4 4M X1 x4 Mode Toshiba Hitachi Fujitsu NEC Oki MSM51C256 F.Page KM41C256 TC51256 HM51256 MB81256 Nibble KM41C257 TC51257 — MB81257 — S. Column KM41C258 TC51258


    OCR Scan     		KM41C256 KM41C257 KM41C258 KM41C464 KM41C466 KM41C1000 KM41C1001 KM41C1002 KM44C256 KM44C258 al 232 nec TC55B4257 MB832001 NM9306 eeprom Cross Reference D41264 TC5116100 HN28C256 NM9307 oki cross reference PDF