Untitled
Abstract: No abstract text available
Text: SAMSUNG ELECTRONICS INC b4E D • 7^4142 KMM5361000A/AG Q014Sh4 SfiS « S M G K DRAM MODULES 1 M X 3 6 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION The Samsung KM M 5361000A is a 1M bitsX36 Dynamic RAM high density memory module. The Samsung KM M 5361000A consist of eight CMOS 1 M X 4 bit
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OCR Scan
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KMM5361000A/AG
Q014Sh4
361000A
bitsX36
20-pin
72-pin
361000A-
130ns
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PDF
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KMM5361000/A
Abstract: No abstract text available
Text: SAMSUNG E LECTRONI CS INC b4E T> • TTbMlMS G 01 4 57 5 KMM5361OOOA1/A1G DhD DRAM MODULES 1 M X 3 6 DRAM SIMM Memory Module GENERAL DESCRIPTION FEATURES The Samsung KMM5361000A1 is a 1M bits x 36 Dynamic RAM high density memory module. The Samsung KMM5361000A1 consist of eight CMOS 1M x4 bit
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OCR Scan
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KMM5361OOOA1/A1G
KMM5361000A1
20-pin
72-pin
KMM5361000A1-7
130ns
M5361OOOA1
150ns
KMM5361000/A
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PDF
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Untitled
Abstract: No abstract text available
Text: KM M5361000B1 /B1G DRAM MODULES 1 M X 3 6 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KMM5361000B1 is a 1M bits x 36 Dynamic RAM KMM5361000B1-6 tR A C tcA c tn c 60ns 15ns 110ns high density memory module. The Sam sung
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OCR Scan
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M5361000B1
KMM5361000B1
KMM5361000B1
KMM5361000B1-6
KMM5361000B1-7
KMM5361000B1-8
110ns
130ns
150ns
20-pin
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PDF
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KM44C1000CJ
Abstract: KMM5361000C
Text: DRAM MODULE 4 Mega Byte KMM5361000C2/C2G Fast Page Mode 1Mx36 DRAM SIMM Using Parity PLCC, 5V G EN E R A L D ESCRIPTIO N FEATURES The Samsung KMM5361000C2 is a 1M bit x 36 Dynamic RAM high density memory module. The Samsung KMM5361000C2 consists of eight CMOS
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OCR Scan
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KMM5361000C2/C2G
1Mx36
KMM5361000C2
20-pin
18-pin
72-pin
KM44C1000CJ
KMM5361000C
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PDF
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Untitled
Abstract: No abstract text available
Text: KMM5361000 DRAM MODULES 1 M X 3 6 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: The Samsung K M M 5361000 is a 1M bits X 36 Dynamic RAM high density memory module. The Samsung KM M 5361000 consist of eight CMOS 1M X 4 bit DRAMs
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OCR Scan
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KMM5361000
20-pin
72-pin
100ns
180ns
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PDF
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Untitled
Abstract: No abstract text available
Text: S A M S U N G E L E C T R O N I C S INC b7 E D • 7 Tb4142 KMM5361000B/BG 0015150 SGÖ H i S M G K DRAM MODULES 1 M X 3 6 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION The Samsung KMM5361000B is a 1M bits x 36 Dynam ic RAM high density memory module. The Samsung
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OCR Scan
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Tb4142
KMM5361000B/BG
KMM5361000B
20-pin
72-pin
110ns
KMM5361000B-7
130ns
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PDF
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Untitled
Abstract: No abstract text available
Text: b7E D SAMSUNG ELECTRONICS INC • 7^143 KMM5361000BH G G 1 5 1 3 4 ADI I SMGK DRAM MODULES 1Mx36 DRAM SIMM Memory Module This SIMM is the x 36 built on x 40 board FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KMM5361000BH is a 1M b itsx3 6 Dynamic
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OCR Scan
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KMM5361000BH
1Mx36
KMM5361000BH
20-pin
72-pin
22jiF
KMM5361000BH-6
110ns
KMM5361000BH-7
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PDF
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0015142
Abstract: No abstract text available
Text: SAMSUNG ELECTRONICS INC b 7 E ]> • DDS I SHGK 7 *b4 1 4 E D 0 1 5 1 4 0 KMM5361000B2/B2G DRAM MODULES 1M x36 DRAM SIM M Memory Module FEATURES GENERAL DESCRIPTION Perform ance range: tRAC tcAC tRC KM M5361000B2-6 60ns 15ns 110ns KMM5361000B2-7 70ns 20ns
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OCR Scan
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KMM5361000B2/B2G
M5361000B2-6
110ns
KMM5361000B2-7
130ns
M5361000B2-8
150ns
M5361000B2
5361000B2
20-pin
0015142
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PDF
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KMM5361000
Abstract: KMM5361000/A
Text: SAMSUNG ELECTRONICS INC 42E ]> • T ^ b M m s GülGSlb Ô KMM5361000 DRAM MODULES 'T - % iï~ n 1 M X 36 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KMM5361000 is a 1M bitsX36 Dynamic RAM high density memory module. The Samsung
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OCR Scan
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KMM5361000
KMM5361000
bitsX36
20-pin
72-pin
150ns
KMM5361000-10
KMM5361000-
KMM5361000/A
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PDF
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KMM5361000
Abstract: "soj 26" dram 80 ns G392
Text: KMM536100QA/AG/A1 /A1G DRAM MODULES 1 M X 3 6 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KMM5361 OOOA is a 1M bitsX36 Dynamic RAM high density memory module. The Samsung KMM5361 OOOA consist of eight CMOS 1MX4 bit
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OCR Scan
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KMM536100QA/AG/A1
KMM5361
bitsX36
20-pin
72-pin
KMM5361000
"soj 26" dram 80 ns
G392
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PDF
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KM44C1000CJ
Abstract: No abstract text available
Text: DRAM MODULE 4 Mega Byte KMM5361000CH Fast Page Mode 1Mx36 DRAM SIMM with ECC, 5V GENERAL DESCRIPTION FEATURES The Samsung KMM5361000CH is a 1M bit x 36 Dynamic RAM high density memory module. The Samsung KMM5361000CH consists of nine CMOS • Performance Range:
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OCR Scan
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KMM5361000CH
1Mx36
20-pin
72-pin
KM44C1000CJ
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PDF
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TIC 1160
Abstract: No abstract text available
Text: KMM5361000A1/A1G DRAM MODULES 1 M X 3 6 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KMM5361000A1 is a 1M bits x 36 Dynamic RAM high d e nsity m em ory m odule. The Sam sung KMM5361000A1 co n sist o f eig h t CMOS 1 M x 4 bit
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OCR Scan
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KMM5361000A1/A1G
5361000A1
M5361OOOA1
KMM5361000A1-10
100ns
130ns
150ns
180ns
KMM5361000A1
TIC 1160
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PDF
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KMM5361003C6
Abstract: TAA 780 kmm5361003
Text: DRAM MODULE / _ 4 Mega Byte KMM5361003C/CG Fast Page Mode / 1Mx36 Quad CAS DRAM SIMM Using Quad CAS DRAM, 5V G EN ERA L D ESCRIPTIO N FEATURES The Samsung KMM5361003C is a 1M bit x 36 Dynamic RAM high density memory mod' e using Parity with 4M Quad CAS DRAM. The Samsung
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OCR Scan
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KMM5361003C/CG
1Mx36
KMM5361003C
20-pin
24-pin
72-pin
KMM5361U03C
KMM5361003C6
TAA 780
kmm5361003
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PDF
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Untitled
Abstract: No abstract text available
Text: SAMSUNG ELECTRONICS INC b4E D • 7Sb4142 0014517 721 KMM5361000B1/B1G DRAM MODULES 1 M X 3 6 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: • • • • • • • tRAC tcAC tra KMM5361000B1-6 60ns 15ns 110ns KMM5361000B1-7
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OCR Scan
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7Sb4142
KMM5361000B1/B1G
110ns
KMM5361000B1-7
130ns
KMM5361000B1-8
KMM5361000B1
20-pin
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PDF
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Untitled
Abstract: No abstract text available
Text: SAMSUNG ELECTRONICS INC b?E T> WM T T b m M E KMM5361OOOBV/BVG 0015122 GTT • SMGK DRAM MODULES 1Mx36 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: The Sam sung KMM5361000BV is a 1M bitsx36 Dynamic RA M high density memory module. The Samsung
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OCR Scan
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KMM5361OOOBV/BVG
1Mx36
KMM5361000BV
bitsx36
20-pin
72-pin
KMM5361000BV-7
130ns
5361OOOBV-8
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PDF
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Untitled
Abstract: No abstract text available
Text: 4 Mega Byte DRAM MODULE KMM5361003C/CG Fast Page Moa» 1Mx36 Quad CAS DRAM SIMM Using Quad CAS DRAM, 5V GENERAL DESCRIPTION FEATURES The Samsung KMM5361003C is a 1M bit x 36 Dynamic RAM high density memory mod' e using Parity with 4M Quad CAS DRAM. The Samsung
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OCR Scan
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KMM5361003C/CG
1Mx36
KMM5361003C
20-pin
24-pin
72-pin
KMW5361003C
KMM5361003C
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PDF
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KMM5361003
Abstract: KMM5361003-6
Text: SAI1SUN6 ELECTRONICS INC b7E D • 7 ^ 4 1 4 2 001525b 3S3 « S M G K KMM5361003/G DRAM MODULES 1Mx36 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KMM5361003/G is a 1M b its x 3 6 Dynam ic RAM high density m em ory module. The Sam sung
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OCR Scan
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001525b
KMM5361003/G
1Mx36
KMM5361003-6
KMM5361003-7
KMM5361003-8
130ns
150ns
KMM5361003/G
KMM5361003
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PDF
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KMM5361000A
Abstract: No abstract text available
Text: KMM5361000A ORAM MODULES 1M X 36 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION The Samsung KMM5361000A is a 1M bitsX 36 Dynamic RAM high density memory module. The Samsung KMM5361000A consist of eight CMOS 1MX4 bit DRAMs in 20-pin SOJ package and four CMOS 1MX 1
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OCR Scan
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KMM5361000A
KMM5361000A-
KMM5361000A-
130ns
150ns
180ns
KMM5361000A-10
KMM5361000A
20-pin
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PDF
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KMM536100
Abstract: KMM5361000A7
Text: KMM5361000A/AG DRAM MODULES 1 M X 3 6 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION The Samsung KM M 5361000A is a 1M bitsX36 Dynamic RAM high density memory module. The Samsung KM M 5361000A consist of eight CMOS 1 M X 4 bit DRAMs in 20-pin SOJ package and four CMOS 1 M X 1
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OCR Scan
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KMM5361000A/AG
361000A
bitsX36
20-pin
22fjF
KMM5361OOOA
361000A-
10OOA-
KMM536100
KMM5361000A7
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PDF
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KMM5361000B-7
Abstract: kmm5361000b7 Q334
Text: KMM5361000B/BG DRAM MODULES 1 M X 3 6 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KMM5361000B is a 1M bits x 36 Dynam ic RAM high density memory module. The Samsung KMM5361000B consist o f eight CMOS 1 M x 4 bit
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OCR Scan
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KMM5361000B/BG
KMM5361000B-6
KMM5361000B-7
KMM5361000B-8
130ns
150ns
KMM5361000B
20-pin
kmm5361000b7
Q334
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PDF
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30 pin simm
Abstract: 30-pin SIMM RAM 30 pin simm memory 256KX8 SIMM 512KX40 1 x 32 72-pin SIMM KMM581020BN 72 simm function KMM5362000 30-pin SIMM
Text: MEMORY ICs FUNCTION GUIDE 2.2 Dynamic RAM Module Based Component Part Number Organization Speed ns Features Packages PCB height(ln) Remark 1M DRAM KMM58256CN 256Kx8 60/70/80 F ast Page S, 30 Pin SIMM 650 Now Base KMM59256CN 256K X 9 70/80 F ast Page S, 30 Pin SIMM
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OCR Scan
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KMM58256CN
KMM59256CN
KMM532256CV/CVG
KMM536256C/CG
KMM32512CV/CVG
KMM536512C/CG
KMM536512CH
KMM540512C/CG'
KMM540512CM
KMM581000C
30 pin simm
30-pin SIMM RAM
30 pin simm memory
256KX8 SIMM
512KX40
1 x 32 72-pin SIMM
KMM581020BN
72 simm function
KMM5362000
30-pin SIMM
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PDF
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23C1001
Abstract: KMM5334100 km 23c 4000B KMM5362003C KM681001-25 KM68V257 KM428V256 23c4001 4100C M681000
Text: FUNCTION GUIDE MEMORY ICs 1. INTRODUCTION 1.1 Dynamic RAM 1Mx1 KM41C1000C-6 KM41C1000CL-6 KM41C1000CSL-6 256Kx4 4Mbit— 4Mx1 KM44C256C-6 KM44C256CL-6 KM44C256CL-7 KM 44C256CL-8 - KM44C256CSL-6 KM44C256CL-7 KM 44C256CL-8 — KM41C4000C-7 — KM41C4000C-8 KM41C4000C-5
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OCR Scan
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KM41C1000C-6
KM41C1000CL-6
KM41C1000CSL-6
256Kx4
KM44C256C-6
KM44C256CL-6
KM44C256CL-7
44C256CL-8
KM44C256CSL-6
23C1001
KMM5334100
km 23c 4000B
KMM5362003C
KM681001-25
KM68V257
KM428V256
23c4001
4100C
M681000
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PDF
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KM424C256Z
Abstract: SIMM 30-pin 30-pin SIMM RAM KM41C256P KM44C256bp KM41C1000BJ 257J KM44C256BZ 1K x4 static ram 30-pin simm memory "16m x 8"
Text: FUNCTION GUIDE MEMORY ICs 2. PRODUCT GUIDE 2.1 Dynamic RAM Part Number Capacity Organization Speed ns Technology Features Packages Remark 64K bit KM4164BP 100/120/150 NMOS Page Mode 16 Pin DIP Now 256K bit KM41C256P KM41C256J KM41C256Z KM41C257P KM41C257J
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OCR Scan
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KM4164BP
KM41C256P
KM41C256J
KM41C256Z
KM41C257P
KM41C257J
KM41C257Z
KM41C258P
KM41C258J
KM41C258Z
KM424C256Z
SIMM 30-pin
30-pin SIMM RAM
KM44C256bp
KM41C1000BJ
257J
KM44C256BZ
1K x4 static ram
30-pin simm memory "16m x 8"
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PDF
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1Mx9 DRAM 30-pin SIMM
Abstract: KMM594000C 30 pin simm 8mx32 simm 72 pin 4Mx9 DRAM 30-pin SIMM 4MX39 1mx33 4m dram 72-pin simm 32 DRAM 30-pin SIMM
Text: 2. Product Guide Org. Part No. Feature Speed ns Package PCB Height Refresh cycle/ms C/S 650 1024/16 NOW DRAM SIMM Based on 4M DRAM 1Mx8 KMM581000CN 1Mx9 4Mx8 4Mx9 F/P 60/70/80 S, 30 Pin SIMM KMM591000CN F/P 60/70/80 S, 30 Pin SIMM 650 1024/16 NOW KMM584000C
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OCR Scan
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1Mx32
1Mx33
1Mx36
1Mx40
2Mx32
2Mx36
1Mx9 DRAM 30-pin SIMM
KMM594000C
30 pin simm
8mx32 simm 72 pin
4Mx9 DRAM 30-pin SIMM
4MX39
4m dram 72-pin simm 32
DRAM 30-pin SIMM
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PDF
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